transistor j210
Abstract: J210 Siliconix JFETs Dual Siliconix N-Channel JFETs AN104 J211 J212
Text: J210/211/212 N-Channel JFETs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J211 –2.5 to –4.5 –25 6 7 J212 –4 to –6 –25 7 15 J211, For applications information see AN104, page 1.
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J210/211/212
AN104,
J211/212,
P-37404--Rev.
04-Jul-94
transistor j210
J210
Siliconix JFETs Dual
Siliconix N-Channel JFETs
AN104
J211
J212
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2N3386
Abstract: 2N3384
Text: -zSemi-Conductot tPioduati, tfnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 p-channel JFETs designed for. • • • • Performance Curves PE See Section 5 Analog Switches Choppers Commutators
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2N3386)
2N3384
2N338Z
2N3386
140kHz
2N3386
2N3384
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Untitled
Abstract: No abstract text available
Text: -Conaucto't \Pioaact i, One. dVs.s.iv TELEPHONE: 973 376-2922 (212) 227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 0.9nV/VHz (typ) TIGHT MATCHING IVGsi-2l = 20rnV max
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LSK389
20rnV
2SK389
-65to
-55to
Continu17
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APT50M80B2VFR
Abstract: ED 58A
Text: APT50M80B2VFR 500V POWER MOS V 58A 0.080W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT50M80B2VFR
Current031)
MIL-STD-750
APT50M80B2VFR
ED 58A
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Untitled
Abstract: No abstract text available
Text: APT8024B2VR APT8024LVR 800V 33A 0.240W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT8024B2VR
APT8024LVR
O-264
O-264
APT8024
O-247
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Untitled
Abstract: No abstract text available
Text: APT6011B2VFR 600V POWER MOS V 49A 0.110W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT6011B2VFR
MIL-STD-750
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Untitled
Abstract: No abstract text available
Text: APT50M85B2VR APT50M85LVR 500V 56A 0.085W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT50M85B2VR
APT50M85LVR
O-264
O-264
APT50M85
O-247
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APT6011B2VR
Abstract: No abstract text available
Text: APT6011B2VR APT6011LVR 600V 49A 0.110W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT6011B2VR
APT6011LVR
O-264
O-264
APT6011
O-247
APT6011B2VR
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APT12060B2VR
Abstract: APT12060LVR
Text: APT12060B2VR APT12060LVR 1200V 20A 0.600W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT12060B2VR
APT12060LVR
O-264
O-264
APT12060
O-247
APT12060B2VR
APT12060LVR
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diode 132
Abstract: No abstract text available
Text: APT8024B2VR APT8024LVR 800V 33A 0.240W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT8024B2VR
APT8024LVR
O-264
O-264
APT8024
O-247
diode 132
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Untitled
Abstract: No abstract text available
Text: APT20M18B2VR APT20M18LVR 200V 100A 0.018W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT20M18B2VR
APT20M18LVR
O-264
O-264
APT20M18
O-247
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Siliconix Dual N-Channel JFETs
Abstract: J210 211 siliconix
Text: Tem ic J210/211/212 Siliconix N-Channel JFETs Product Summary P a rt N um ber Vg s oK (V) V(BR)GSS ^ ' ,l ^ ; gfcM in (m S) 'I I dss Mi (mA) J210 - 1 to - 3 -25 4 2 J211 -2.5 to -4.5 -2 5 6 7 J212 —4 to - 6 -2 5 7 15 J211, For applications information seeAN104, page 12-21.
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J210/211/212
seeAN104,
J211/212,
P-37404--
P-37404--Rev.
Siliconix Dual N-Channel JFETs
J210
211 siliconix
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Untitled
Abstract: No abstract text available
Text: APT40M70JVR A DVAN CED PO W ER Te c h n o lo g y 400V 53A 0.070Q POWER MOSV Power MOS V'" is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V
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APT40M70JVR
OT-227
APT40M70JVR
MIL-STD-750
OT-227
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Untitled
Abstract: No abstract text available
Text: APT40M70JVR A dvanced P o w er Te c h n o lo g y 400V 53A 0.070Í2 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT40M70JVR
OT-227
E145592
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Untitled
Abstract: No abstract text available
Text: APT40M70JVR • R A dvanced W 'æ p o w e r Te c h n o l o g y ' 400v 53a 0.070q POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT40M70JVR
OT-227
E145592
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Untitled
Abstract: No abstract text available
Text: A d van ced APT10050B2VR po w er Te c h n o l o g y 1000V 21A 0.5000 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT10050B2VR
MIL-STD-750
ev050-5614
GDD2177
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BO 615 DIODE
Abstract: E 212 JFET
Text: A d v a n c ed P o w er Tec h n o lo g y ' APT30M70BVR 300V 48A 0.070Í2 POWER MOS V Power MOS V is a new generation of high voltage N-Channe! enhancement mode power MOSFETs, This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V
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APT30M70BVR
O-247
APT30M70BVR
GMIL-STD-750
O-247AD
BO 615 DIODE
E 212 JFET
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PT1201
Abstract: diode SM I600N
Text: A P T 1201 R 6B V R A dvanced P o w er Te c h n o lo g y ' 1200V sa i.600n POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V
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O-247
APT1201R6BVR
MIL-STD-750
O-247AD
PT1201
diode SM
I600N
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LF412C
Abstract: LF412CD LF412CDR LF412CP 19B7
Text: LF412C DUAL JFET-INPUT OPERATIONAL AMPLIFIER SLOSOIOB - MARCH 1987 - REVISED AUGUST 1994 Low Input Bias Current. . . 50 pA Typ Low Input Noise Current 0.01 pA/VHz Typ Low Supply Current. . . 4.5 mA Typ High Input impedance . . . 1012 a Typ Internally Trimmed Offset Voltage
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LF412C
V01/V02
LF412C
LF412CD
LF412CDR
LF412CP
19B7
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Untitled
Abstract: No abstract text available
Text: APT20M22B2VR A d va n ced P o w er Tec h n o lo g y 200V 100A 0.Q22C1 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT20M22B2VR
Q22C1
O-247
500nH,
MIL-STD-750
O-247AD
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MOS 4016
Abstract: T4016B T40-16B
Text: A dvanced P ow er Te c h n o l o g y A P 400 ' 4016 T B V R 27A 0 160 2 V . Í POWER MOS V Power MOS V is a new generation of high voltage N-Channei enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V
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O-247
APT4016BVR
MIL-STD-75Q
O-247AD
MOS 4016
T4016B
T40-16B
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APT8065
Abstract: AS1210 APT8065BVR
Text: • r ADVANCED W /Æ P o w er Tec h n o lo g y APT8065BVR soov i3a o.65oq POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT8065BVR
O-247
APT8065
AS1210
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Untitled
Abstract: No abstract text available
Text: APT10086BVR A dvanced po w er Te c h n o l o g y 1000V 13A 0.860£2 POWER MOS V‘ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT10086BVR
O-247
APT10086BVR
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Untitled
Abstract: No abstract text available
Text: APT5017BVFR A dvanced P o w er Te c h n o lo g y 500V POWER MOS V 30A 0.170Q FREDFET Power MOS V is a new generation of high voltage N-Channei enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V
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APT5017BVFR
O-24T
APT5017BVFR
O-247AD
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