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    J211 Search Results

    J211 Result Highlights (4)

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    2SJ211(0)-T1B-A Renesas Electronics Corporation Power MOSFETs for Automotive, MM, / Visit Renesas Electronics Corporation
    2SJ211-T2B-A Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SJ211-T1B-A Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    GSB311J211C2EU Amphenol Communications Solutions USB 3.2, Type A, Receptacle, Right Angle, High Rise, 12mm Height, 9 Pins, Shell Kink with Nickel Plating, 15u\\ Gold, Dip 2.4mm, Blue High Temperature Housing, Tray Packaging Visit Amphenol Communications Solutions
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    J211 Price and Stock

    Reliance North America WJ211R-2.5-21P-11-RNA

    21 position PCB push-in spring c
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    Reliance North America WJ211R-5.0-23P-11-RNA

    23 position PCB push-in spring c
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    Reliance North America WJ211V-2.5-30P-11-RNA

    30 position PCB push-in spring c
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    Reliance North America WJ211V-5.0-03P-11-RNA

    3 position PCB push-in spring co
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    Reliance North America WJ211V-5.0-16P-11-RNA

    16 position PCB push-in spring c
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    J211 Datasheets (28)

    Part ECAD Model Manufacturer Description Curated Type PDF
    J211 Calogic N-Channel JFET Original PDF
    J211 Fairchild Semiconductor N-Channel RF Amplifier Original PDF
    J211 InterFET N-Channel silicon junction field-effect transistor Original PDF
    J211 Linear Integrated Systems LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER Original PDF
    J211 Philips Semiconductors N-channel field-effect transistors Original PDF
    J211 Siliconix N-Channel JFETs Original PDF
    J211 Vishay TRANS JFET N-CH 20MA 3TO-226AA Original PDF
    J211 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    J211 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    J211 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    J211 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    J211 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    J211 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    J211 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF
    J211 National Semiconductor N-Channel JFETs Scan PDF
    J211 National Semiconductor N-Channel JFETs Scan PDF
    J211 National Semiconductor JFET General Purpose Scan PDF
    J211 Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    J211 Siliconix PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS Scan PDF
    J211 Siliconix FET Design Catalogue 1979 Scan PDF

    J211 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor j210

    Abstract: J210 J211 J212 marking J212
    Text: DISCRETE SEMICONDUCTORS DATA SHEET J210; J211; J212 N-channel field-effect transistors Product specification File under Discrete Semiconductors, SC07 1997 Dec 01 Philips Semiconductors Product specification N-channel field-effect transistors J210; J211; J212


    Original     		PDF SCA56 117067/00/01/pp12 transistor j210 J210 J211 J212 marking J212

    SAE 60 filter

    Abstract: endevco 31875 ISO6487 J211 endevco endevco model 136 dc amplifier J211 LED Digital Panel meter 31875-0165-0
    Text: Model 31875 Programmable filter Features Description • 4-pole low pass Butterworth • 20 corner frequencies available • 10 Hz to 80 kHz in 1, 2, 4, 6 and 8 steps • Self-identifying ID for the frequency corner installed in model 133/136 amplifiers • Filter options available for SAE J211 and


    Original     		PDF ISO6487 CA92675 SAE 60 filter endevco 31875 J211 endevco endevco model 136 dc amplifier J211 LED Digital Panel meter 31875-0165-0

    2N5911

    Abstract: SSTJ212 transistor j210 J210 J211 J212 SSTJ211
    Text: J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 J211 J211 SSTJ212 J212 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/J211 –2.5 to –4.5 –25 6 7 J/SSTJ212 –4 to –6 –25


    Original     		PDF J/SSTJ210 SSTJ211 SSTJ212 J/SSTJ211 J/SSTJ212 J211/212, 18-Jul-08 2N5911 SSTJ212 transistor j210 J210 J211 J212 SSTJ211

    J211 jfet siliconix

    Abstract: J211
    Text: J211 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J211 FEATURES DIRECT REPLACEMENT FOR SILICONIX J211 HIGH GAIN gfs = 7000µmho MIN HIGH INPUT IMPEDANCE IGSS = 100pA max LOW INPUT CAPACITANCE Ciss = 5pF ABSOLUTE MAXIMUM RATINGS @ 25°C unless otherwise noted


    Original     		PDF OT-23 100pA 360mW J211 jfet siliconix J211

    "Z2" marking

    Abstract: No abstract text available
    Text: J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 J211 J211 SSTJ212 J212 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/J211 –2.5 to –4.5 –25 6 7 J/SSTJ212 –4 to –6 –25


    Original     		PDF J/SSTJ210 J/SSTJ211 J/SSTJ212 SSTJ211 SSTJ212 J211/212, 08-Apr-05 "Z2" marking

    Siliconix N-Channel JFET

    Abstract: No abstract text available
    Text: J211 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J211 FEATURES DIRECT REPLACEMENT FOR SILICONIX J211 HIGH GAIN gfs = 7000µmho MIN HIGH INPUT IMPEDANCE IGSS = 100pA max LOW INPUT CAPACITANCE Ciss = 5pF


    Original     		PDF LSJ211 OT-23 100pA 360mW Siliconix N-Channel JFET

    endevco 136

    Abstract: endevco model 136 dc amplifier endevco 31875 J211 endevco endevco 136 signal conditioner Endevco amplifier endevco model 136 amplifier Butterworth Endevco ISO6487
    Text: Programmable Filter ENDEVCO Model 31875 MODEL 31875 • • • • 4-Pole Low Pass Butterworth 20 Corner Frequencies Available 10 Hz to 80 kHz in 1, 2, 4, 6 and 8 Steps Self-identifying ID for the Frequency Corner Installed in Model 133/136 Amplifiers • Filter Options Available for SAE J211 and


    Original     		PDF ISO6487 endevco 136 endevco model 136 dc amplifier endevco 31875 J211 endevco endevco 136 signal conditioner Endevco amplifier endevco model 136 amplifier Butterworth Endevco

    Untitled

    Abstract: No abstract text available
    Text: J210, J211, J212 SSTJ210, J211, SSTJ212 LOW NOISE N-CHANNEL JFET GENERAL PURPOSE AMPLIFIER TO-92 TO-92 FEATURES HIGH GAIN gfs=7000µmho MINIMUM J211, J212 HIGH INPUT IMPEDENCE LOW CAPACITANCE Plastic D IGSS= 100pA MAXIMUM G CISS= 5pF TYPICAL S ABSOLUTE MAXIMUM RATINGS


    Original     		PDF SSTJ210, SSTJ211, SSTJ212 100pA OT-23 360mW SSTJ210

    low igss

    Abstract: J212 J211 J210 transistor j210 J210 equivalent
    Text: J210, J211, J212 LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER Linear Integrated Systems TO-92 Plastic FEATURES HIGH GAIN gfs = 7000µmho MINIMUM J211, J212 TO-92 D HIGH INPUT IMPEDANCE IGSS= 100pA MAXIMUM G LOW INPUT CAPACITANCE Ciss= 5pF TYPICAL


    Original     		PDF 100pA 360mW low igss J212 J211 J210 transistor j210 J210 equivalent

    212 s sot-23

    Abstract: 62w sot-23 rf transistor mark code H1 212 t sot-23 J212 J211 TOP CBVK741B019 F63TNR J211 MMBFJ211
    Text: J211 / J212 / J211 / MMBFJ212 J211 MMBFJ212 J211 J212 G S G S TO-92 SOT-23 D Mark: 62W / 62X D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient


    Original     		PDF MMBFJ211 MMBFJ212 MMBFJ211 OT-23 212 s sot-23 62w sot-23 rf transistor mark code H1 212 t sot-23 J212 J211 TOP CBVK741B019 F63TNR J211

    J211

    Abstract: 62w sot-23 N-Channel RF Amplifier J212 rf amplifier
    Text: J211 / J212 / J211 / MMBFJ212 J211 MMBFJ212 J211 J212 G G S S TO-92 SOT-23 D Mark: 62W / 62X D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient


    Original     		PDF MMBFJ211 MMBFJ212 OT-23 J211 62w sot-23 N-Channel RF Amplifier J212 rf amplifier

    transistor j210

    Abstract: J210 Siliconix JFETs Dual Siliconix N-Channel JFETs AN104 J211 J212
    Text: J210/211/212 N-Channel JFETs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J211 –2.5 to –4.5 –25 6 7 J212 –4 to –6 –25 7 15 J211, For applications information see AN104, page 1.


    Original     		PDF J210/211/212 AN104, J211/212, P-37404--Rev. 04-Jul-94 transistor j210 J210 Siliconix JFETs Dual Siliconix N-Channel JFETs AN104 J211 J212

    ultra low igss pA mosfet

    Abstract: ultra low igss pA j174 Transistor AND DIODE Equivalent list Ultra High Input Impedance N-Channel JFET Amplifier sd210 3n164 equivalent SST113 ULTRA LOW NOISE N-CHANNEL JFET 2N3958 equivalent
    Text: J210, J211, J212 LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER Linear Integrated Systems TO-92 Plastic FEATURES HIGH GAIN gfs = 7000µmho MINIMUM J211, J212 TO-92 D HIGH INPUT IMPEDANCE IGSS= 100pA MAXIMUM G LOW INPUT CAPACITANCE Ciss= 5pF TYPICAL


    Original     		PDF 100pA 360mW ultra low igss pA mosfet ultra low igss pA j174 Transistor AND DIODE Equivalent list Ultra High Input Impedance N-Channel JFET Amplifier sd210 3n164 equivalent SST113 ULTRA LOW NOISE N-CHANNEL JFET 2N3958 equivalent

    Untitled

    Abstract: No abstract text available
    Text: J210, J211, J212 / SSTJ210, J211, SSTJ212 LOW NOISE N-CHANNEL JFET GENERAL PURPOSE AMPLIFIER FEATURES HIGH GAIN gfs=7000µmho MINIMUM J211, J212 HIGH INPUT IMPEDENCE LOW CAPACITANCE TO-92 IGSS= 100pA MAXIMUM CISS= 5pF TYPICAL Plastic D ABSOLUTE MAXIMUM RATINGS


    Original     		PDF SSTJ210, SSTJ211, SSTJ212 100pA 360mW OT-23 SSTJ210

    SST5484

    Abstract: No abstract text available
    Text: Temic S e m i c o n d u c t o r s W S08 T0220 TOS2 T0237 GateUafcage rpA> Ij>ss , u m Mifl T092 2 lead Max Min Max Min T092 (3 lead) . 9ft . Typ Max | Max Typ ] Max Comments T0220AA (T092) J210 15 12 J211 20 12 15 40 12 J212 -25 -3 -2.5 ' -4.5 -4 ~6 -1 0 0


    OCR Scan     		PDF T0220 T0237 T0220AA PN4117A PN4118A PN4119A 2N4416A 2N4117A 2N4118A 2N4119A SST5484

    J212

    Abstract: No abstract text available
    Text: J2 1 0 .J2 1 1 .J2 1 2 LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER LINEAR SYSTEMS Linear Integrated Systems FEATURES HIGH GAIN gfe = 7000|imho MINIMUM J211, J212 HIGH INPUT IMPEDANCE lQSS= 100pA MAXIMUM LOW INPUT CAPACITANCE C|##= 5pF TYPICAL ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF 100pA 360mW S-16V Vos-15V J212

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by J21195/D SEMICONDUCTOR TECHNICAL DATA PNP M J21195* NPN M J21196* Silicon Power Transistors The M J21195 and M J21196 u tiliz e P e rfo ra te d E m itte r te c h n o lo g y and are specifically designed for high power audio output, disk head positioners and linear


    OCR Scan     		PDF MJ21195/D J21195* J21196* J21195 J21196

    3539 transistor

    Abstract: MJ21193 mj21194
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP M J21193* IIB U Silico n Pow er T ransistors M J21194* The J21193 and J21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.


    OCR Scan     		PDF J21193* MJ21193 MJ21194 J21194* O-204AA J21194 3539 transistor

    Untitled

    Abstract: No abstract text available
    Text: J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 J211 J211 SSTJ212 J212 PRODUCT SUM M ARY Part Number VGS off (V) V (BH)GSS M in (V) 9 fs Min (mS) loss Ml*1 (mA) J2 1 0 - 1 to - 3 -2 5 4 J/S S T J211 - 2 .5 t o -4 .5 -2 5 6 7 -2 5 7 15 J /S S T J 2 1 2


    OCR Scan     		PDF J/SSTJ210 SSTJ211 SSTJ212 J211/212, S-04028--Rev. 04-Jun-01 S-04028--

    Untitled

    Abstract: No abstract text available
    Text: J210. J211. J212 LINEAR SYSTEMS LOW NOISE N-CHANNEL J-FET G EN ERAL PURPO SE AMPLIFIER Linear Integrated Systems FEATURES HIGH GAIN = 7000^mho MINIMUM J211, J212 HIGH INPUT IMPEDANCE lQSS= 100pA MAXIMUM LOW INPUT CAPACITANCE C|88= 5pF TYPICAL ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF 100pA 360mW LISIS00075

    JFs sot-23

    Abstract: J212 J212 we J211 MMBFJ211 MMBFJ212 T092
    Text: J211 / J212 / J211 /MMBFJ212 Discrete POW ER & Signal Technologies National Semiconductor" J211 MMBFJ212 J211 J212 SOT-23 Mark: 62 W /6 2X N-Channel General Purpose Amplifier This device is designed for VHF/UHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise,


    OCR Scan     		PDF MMBFJ211 MMBFJ212 OT-23 2W/62X JFs sot-23 J212 J212 we J211 MMBFJ212 T092

    Untitled

    Abstract: No abstract text available
    Text: T em ic J/SSTJ210 Series S e m i c o n d u c t o r s N-Channel JFETs J210 J211 J212 J211 SSTJ212 Product Summary Part Number V G S off (V ) V ( b r )G SS M i n ( V ) gfe Min (mS) Idss Min(mA) 3 210 -1 to -3 -2 5 4 2 J /S S T J 2 U - 2 .5 to - 4 .5 -2 5


    OCR Scan     		PDF J/SSTJ210 SSTJ211 SSTJ212 S-52428--Rev. 14-Apr-97

    J210

    Abstract: J211 J212
    Text: H n-channel JFETs designed f o r . S ilic o n ix P erform ance Curves N ZF Se e Section 5 • G e n e r a l P u rp ose A m p lifie rs k> o < - K> B E N E F IT S • High Gain G p s = 7000 /¿mho Minim um J211, J212 • High Input Impedance IQ S S = 100 p A M axim um


    OCR Scan     		PDF VDS-15V J210 J211 J212

    Untitled

    Abstract: No abstract text available
    Text: J210. J211. J212 LINEAR SYSTEMS LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER Linear Integrated Systems FEATURES HIGH GAIN gfs = 7000 Urn ho MINIMUM J211, J212 HIGH INPUT IMPEDANCE lGSS= 100pA MAXIMUM LOW INPUT CAPACITANCE C. ISS = 5pF TYPICAL r ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF 100pA 360mW