E2P 25 Search Results

Contextual Info: //MEMORY M em ory size bit Memory Line-up Package ' jjp ./>•%• /)❖ o ' rfS " <# <§' <f$ Page e2p r o m - Serial 2-wire — 25 -S-24C Series- Serial 3-wire -o-o- S-93C Series- -0 -0 - — 26 A M > — 26 -Small Package 1.8V Read/Write

S-29220AFJA-TB

Abstract: s29130afjatb S-2913
Contextual Info: S-29XX0A Series 3-WIRE CMOS SERIAL E’PROM Th e S -2 9 X X 0 A Series is high speed, low power 1 K/2K/4K-bit E2P R O M with a wide operating voltage range. They are organized as 64-w ord x 16-bit, 128-word x 16-bit and 256-w ord x 16-bit, respectively. Each is capable of sequential

AL6001

Contextual Info: í w # d lld 'IIIU IV Ib Q N ^ 7 # . G A L 6 0 0 1 S RfflD [S©ll[Lll OT R!]D©i E2P R 0 M CMOS PROGRAMMABLE LOGIC DEVICE • ELECTRICALLY ERASABLE CELL TECHNOLOGY — Instantly reconfigurable logic — Instantly reprogrammable cells — Guaranteed 100% yields

Contextual Info: CAT28C17AI CAT28C17AI - Industrial Temperature 2K x 8 BIT CMOS E2PROM DESCRIPTION FEATURES T h e C A T 28C 17A I is a fast, tow power, 5V-only C M O S E2P R O M requiring a simple interface for insystem programming. • ■ On-chip address and data latches, self-timed write

29736

Abstract: TC58V16BDC TC5816BDC SmartMedia Logical Format ID device code toshiba NAND ID code
Contextual Info: TO S H IB A TC58V16BDC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 16 M b it 2 M SILICON GATE CMOS x 8 bit C M O S N A N D E2P R O M (2 M BYTE S m a r t M e d ia ) DESCRIPTION The TC58V16BDC device is a single 3.3 volt 16 M (17,301,504) bit NAND Electrically Erasable and

Contextual Info: TOSHIBA TENTATIVE TC58V16BDC T O S H I B A M O S D IG IT A L IN T E G R A T E D C IR C U IT SILICO N G A T E C M O S 16 M B I T 2 M X 8 BITS C M O S N A N D FLASH E2P R O M D ESC RIP TIO N The TC58V16 device is a single 3.3-volt 16 Mbit NAND Electrically Erasable and Programmable

M36A0W504

Abstract: m36 mcp M28W320FCB JESD97 M28W320FC M28W320FCT M69AW024BE BGA-Z12 M28W320 WPF 25K
Contextual Info: M36A0W5040T0 M36A0W5040B0 32 Mbit 2 Mb x16, Boot Block Flash memory 16 Mbit (1 Mb ×16) PSRAM, multi-chip package Features • ■ ■ ■ Multi-chip package – 1 Die of 32 Mbit (2 Mb ×16) Flash memory – 1 Die of 16 Mbit (1 Mb ×16) Pseudo SRAM FBGA

e2p 25

Abstract: J-STD-020B M30L0R7000B0 M30L0R7000T0 M36L0R7040B0 M36L0R7040T0 M69AR024B
Contextual Info: M36L0R7040T0 M36L0R7040B0 128 Mbit Multiple Bank, Multi-Level, Burst Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 16 Mbit (1Mb x16) Pseudo SRAM

M36L0T7060B

Abstract: M36L0T7060 TFBGA88 M69KW096B DSA0042593 flash E2p M58LT128HB M58LT128HT M36L0T7
Contextual Info: M36L0T7060T2 M36L0T7060B2 128 Mbit Multiple Bank, Multilevel, Burst Flash memory and 64 Mbit (4 Mb x16) PSRAM, multichip package Preliminary Data Features • ■ ■ ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash Memory

J-STD-020B

Abstract: M30L0R7000B0 M30L0R7000T0 M36L0R7050B0 M36L0R7050T0 M69AR048B
Contextual Info: M36L0R7050T0 M36L0R7050B0 128 Mbit Multiple Bank, Multi-Level, Burst Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 32 Mbit (2Mb x16) Asynchronous

238g

Abstract: DH245
Contextual Info: SILICON MULTIPLIER VARACTOR These silicon multiplier varactors from 0.2 to 25 GHz are designed for harmonic generation of high power levels and /or a t high multiplication orders, P a c k a g e d diodes C haracteristics at 25° C Test O utput B reakdown

dh236

Abstract: DH294 DH240 DH267 DH252 DH200 DH245
Contextual Info: POWER GENERATION DIODES These silicon multiplier varactors from 0.2 to 25 GHz are designed for harm onic g eneration a t high p ow er levels a n d /o r a t high m ultiplication order. Packaged diodes C H A R A C T E R IS T IC S VARACTOR OUTPUT B REAKDOW N

M36L0T7050T2

Abstract: M58LT128HB M58LT128HT M36L0t7050
Contextual Info: M36L0T7050T2 M36L0T7050B2 128 Mbit Multiple Bank, Multilevel, Burst Flash memory and 32 Mbit (2 Mb x16) PSRAM, multichip package Features • ■ ■ ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash Memory – 1 die of 32 Mbit (2 Mb x16) Pseudo SRAM

M30L0T7000T0

Abstract: J-STD-020B M36L0T7050B0 M36L0T7050T0 M69AW048B Flash Memory 32Mbit M30L0T7000
Contextual Info: M36L0T7050T0 M36L0T7050B0 128Mbit Multiple Bank, Multi-Level, Burst Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 128Mbit (8Mx16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 32Mbit (2Mx16) Pseudo SRAM

J-STD-020B

Abstract: M36W0R7050B0 M36W0R7050T0 M69AR048B
Contextual Info: M36W0R7050T0 M36W0R7050B0 128 Mbit 8Mb x16, Multiple Bank, Burst Flash Memory and 32 Mbit (2Mb x16) PSRAM, 1.8V Supply Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Burst) Flash Memory – 1 die of 32 Mbit (2Mb x16) Pseudo SRAM

Contextual Info: M36W0R6050T1 M36W0R6050B1 64 Mbit 4 Mb x16, multiple bank, burst Flash memory and 32 Mbit (2 Mb ×16) PSRAM, multichip package Features • Multichip package – 1 die of 64 Mbit (4 Mb × 16) Flash memory – 1 die of 32 Mbit (2 Mb × 16) PSRAM ■ Supply voltage

IT 8572E

Abstract: 8572E MRAM PCI PCI6466 CPCI-6115 PICMG 2.1 ddr3 MTBF CompactPCI Express specification IT+8572E TSI384
Contextual Info: CPCI6200 PICMG 2.0/2.16 Processor Board PRELIMINARY DATA SHEET The CPCI6200 offers high speed bandwidth and serverclass performance for compute intensive and control plane applications. nn 1.3 or 1.5 GHz Freescale MPC8572 dual core integrated processor nn Integrated north bridge in the

MVME7100

Abstract: usb to rj45 wiring diagram PCI Express connector 8x pinout 8GB Nand flash PEX8114 RS-232 to usb circuit diagram Tundra TSi148 Linux MVME5100 VME64* tsi148 MVME6100
Contextual Info: MVME7100 Series VMEbus Single-Board Computer The MVME7100 adds performance and features while protecting the fundamental investment in VMEbus and related technologies nn Up to 1.3 GHz system-on-chip Freescale MPC864xD with dual PowerPC e600 processor cores, dual integrated memory

Contextual Info: M IC R O E L E C T R O N IC S , INC. XL46HC64/64L Excelle nce in E! mSPEEDPROM TM 8K X 8 Highspeed CMOS Electrically Erasable PROM P R E L IM IN A R Y FEATURES • 8 1 9 2 x 8 bit O rganization • Highspeed R ead Access — 35ns X L 4 6 H C 6 4 — 45ns (X L 4 6H C 64L )

AT24C

Abstract: AT24C164
Contextual Info: AT24C164 Features • L o w V o lta g e a n d S ta n d a r d V o lta g e O p e ra tio n 5 .0 V c c = 4 .5 V to 5 .5 V 2 .7 (V c c = 2 .7 V to 5 .5 V ) 2 .5 (V c c = 2 .5 V to 5 .5 V ) 1.8 (V c c = 1 .8 V to 5 .5 V ) • In te rn a lly O rg a n iz e d 2 0 4 8 x 8 (1 6 K )

4406a

Abstract: AT89C51 4406A-SCR-01 Atmel USB Device Stack application note AT89C5122 batch 0004H D130 07FFD AT89C5
Contextual Info: Preventing Windows XP from Displaying “Unknown device” Message at Startup AT89C5122 1. Features • Applicable only to AT89C5122 products embedding the DRV or DSU bootloaders • Prevents Windows XP Operating System from displaying “Unknown device” message

Contextual Info: SPECIFICATION DEVICE NAME TYPE NAME IG B T : 1 M B H 0 8 D - 1 20 SPEC. No. MS 5 F 3 6 8 T DATE_ :_ Jun. -25-1996 F u j i E l e c t r i c Co., Ltd. This S p ecificatio n is subject to change without notice. • 22307^2 G G 043H5 b l7 Ratings and characteristics of Fuji IGBT

Contextual Info: Cannon Fiber Optics Design Guide Specification Comparison FOHC ITT fiber optic contacts are a standard in the industry. We offer the most complete line of fiber optic contacts, engineered to fit today’s MIL-Spec circular, rack and panel, edgecard/LRM, and D

KP106

Abstract: shock sensor airbag human detection sensors ic 812 smd car ecu REGULATOR S 812 crash sensor airbag crash sensor airbag sensor pdf on Pedestrian Detection
Contextual Info: Product Brief KP106 Integrated Pressure Sensor IC for Side Crash Detection PG-DSOF-8-12 Application The KP106 is a pressure sensor for the detection of side crashes in passenger cars. In this application, the pressure sensor is assembled in a module located within the car’s side door. When the door is compressed due