OMRON E5CN
Abstract: omron zen 10c1dr-d-v1 Omron SPEED sensor 12v m16 OMRON H5CX programming manual omron zen 10c1ar-a-v1 omron TS 101 DA analogue extension modules ZEN 10C1DR-D-V1 sv 120 230 liquids dual level relay manual omron e5cs Omron H7CR Catalog
Text: INDUSTRIAL COMPONENTS Product Selector 2004 / 2005 • Electromechanical relays • Timers • Counters • Programmable relays • Level and leakage controllers • Industrial switches • Pushbutton switches • Low voltage switch gear • Temperature controllers
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omron e5a
Abstract: E5EJ-A2HB Omron Type E5AJ-A2HB E5EJ-A2HM MANUAL E5EJ-A2HB MANUAL E5AJ-A2HB E5EJ-A2HM IE5A E5A/EJ E5AJ-A2HM
Text: Temperature Controller IE5A/EJ Fuzzy Self-tuning Temperature Controller with Advanced PID 2-PID Control ie5aj ie5ej DIN-size: 96 x 96 mm (E5AJ), 48 x 96 mm (E5EJ) Fuzzy self-tuning continuously optimizes temperature control. Up to 4 setpoints, selectable by external volt-free
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12-bit
RS-485
RS-422
omron e5a
E5EJ-A2HB
Omron Type E5AJ-A2HB
E5EJ-A2HM MANUAL
E5EJ-A2HB MANUAL
E5AJ-A2HB
E5EJ-A2HM
IE5A
E5A/EJ
E5AJ-A2HM
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN4610 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4610 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT + 0.2 AND DRIVER CIRCUIT APPLICATIONS. 2.8-0.3 + 0.2 1 .6 - 0 .1 • • •
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RN4610
961001EAA2'
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RN4610
Abstract: No abstract text available
Text: TOSHIBA RN4610 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4610 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT + 0.2 AND DRIVER CIRCUIT APPLICATIONS. 2.8-0.3 + 0.2 1 .6 - 0 .1 • • •
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RN4610
RN4610
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RN4612
Abstract: sc-74 e5
Text: TOSHIBA RN4612 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4612 SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT Unit in mm A N D DRIVER CIRCUIT APPLICATIONS. + 0.2 2 .8 -0 .3 + 0.2 1 .6 - 0 .1 •
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RN4612
RN4612
sc-74 e5
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RN4608
Abstract: No abstract text available
Text: TOSHIBA RN4608 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4608 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT + 0.2 AND DRIVER CIRCUIT APPLICATIONS. 2.8-0.3 + 0.2 1.6 • • • • Including Two Devices in SM6 (Super Mini Type with 6 leads)
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RN4608
RN4608
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RN4603
Abstract: No abstract text available
Text: TOSHIBA RN4603 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4603 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.2 2.8 -0.3 1.6-0.1 + 0.2 • • • •
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RN4603
RN4603
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RN4605
Abstract: No abstract text available
Text: TOSHIBA RN4605 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4605 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT + 0.2 AND DRIVER CIRCUIT APPLICATIONS. 2.8-0.3 1.6 • • • • + 0.2 -
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RN4605
RN4605
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RN4609
Abstract: No abstract text available
Text: TOSHIBA RN4609 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4609 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT Unit in mm AND DRIVER CIRCUIT APPLICATIONS. + 0.2 2 .8-0.3 + 0.2 1. 6 - 0.1 • Including Two Devices in SM6 (Super Mini Type with 6 leads)
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RN4609
RN4609
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33164
Abstract: SG34164
Text: LINFINITY- M ic ro e le c tro n ic s Inc. A Silicon G en eral SG33164/34164 C o m p an y MICROPOWER SENSING CIRCUIT DESCRIPTION FEATURES The SG33164 and the SG34164 are micropower undervoltage sensing circuits ideal for use in low power battery applications, in computer
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SG33164/34164
SG33164
SG34164
150mil
150mil,
MC33164/34164
33164
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Untitled
Abstract: No abstract text available
Text: Pöä@E yj Tr ©^ t o [l ( P -C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum . 020 " (0.508mm) Backside Contact: 3,OCX) À Gold ASSEMBLY RECOMMENDATIONS .015" (0.381mm) It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.
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508mm)
381mm)
0254mm)
UC400,
UC410,
UC420,
2N2607,
2N2608,
2N2609,
2N2842,
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RN4602
Abstract: No abstract text available
Text: TOSHIBA RN4602 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4602 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.2 2.8-0.3 + 0.2 1 .6 - 0 .1 Including Two Devices in SM6 (Super Mini Type with 6 leads)
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RN4602
RN4602
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2N2844
Abstract: 2N2607 UC410 2N2609 2N2842 2N2608 Junction-FET UC400 UC420
Text: -Æ litra n Dev/ces. Inc. P -C H A N N E L J U N C T I O N FE T CHIP NUMBER CONTACT METALLIZATION Top Contact: > A Aluminum 12,000 .02cr 0.508mm Backside Contact: 3,000 À Gold ASSEMBLY RECOMMENDATIONS .015" (0.381mm) It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.
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508mm)
381mm)
0254mm)
2N2844
2N2607
UC410
2N2609
2N2842
2N2608
Junction-FET
UC400
UC420
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4034A
Abstract: rca 4039ae 4034AE CM4011AE CD4000AE CM4000 CM4000AE CM4001AE CM4002AE CM4011A
Text: Solidev Sem iconductors Integrated Circuits - Digital CMOS CM4000 Series CM OS Equivalent to R C A CD4000AE Series G E N E R A L D E S C R IP T IO N Com plem entary M O S circu its are norm ally made on an N-type substrate, w hich necessitates the use of a P-type well for N -channel devices
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CM4000
CD4000AE
4044AE
4036AE
4048AE
4034A
rca 4039ae
4034AE
CM4011AE
CM4000AE
CM4001AE
CM4002AE
CM4011A
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a1u transistor
Abstract: sed5031c
Text: S-M 0 S SYSTEMS INC IDE D | 7^35ciO,:5 DDDDSTD M | PF221-03 feMdS&f CMOS 12 BIT THERMAL HEAD DRIVER #Built in 12bit static shift register #12bit latch circuits #Output control circuits and built in 12bit driver •DESCRIPTION The SED5031Coc is a low power CMOS 12bit thermal head driver. It contains a 12bit high speed shift
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PF221-03
12bit
SED5031Coc
12blt
8V/150mA
a1u transistor
sed5031c
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Ultrasonic amplifier schematic circuit
Abstract: circuit diagram for simple IR receiver ultrasonic amplifier circuit diagram MRD821 MC3373 MC3373P envelope detector ic circuit diagram for simple IR transmitter high Frequency envelope detector 125 khz ultrasonic RECEIVER CIRCUIT
Text: MOTOROLA Rem ote Control A m plifier/D etector The MC3373 is intended for application in infrared remote controls. It provides the high gain and pulse shaping needed to couple the signal from an IR receiver diode to the tuning control system logic. • High Gain Pre-Amp
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MC3373
nPC1373
MC14497
MLED81
MRD821
b3b72S3
MC3373
Ultrasonic amplifier schematic circuit
circuit diagram for simple IR receiver
ultrasonic amplifier circuit diagram
MC3373P
envelope detector ic
circuit diagram for simple IR transmitter
high Frequency envelope detector
125 khz ultrasonic RECEIVER CIRCUIT
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BSN3005
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification N-channel enhancement mode MOS transistor BSN3005 FEATURES PINNING - SOT23 • High speed switching • No secondary breakdown • Direct interface to C-MOS, TTL etc. PIN SYMBOL 1 2 3 g DESCRIPTION gate s source
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BSN3005
711002b
G11DD42
MBC846
7110flEb
BSN3005
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Untitled
Abstract: No abstract text available
Text: <g> M O TO R O LA MC1741C Internally Compensated, High Performance Operational Amplifier OPERATIONAL AMPLIFIER T h e M C 1 7 4 1 C was designed for use as a summing amplifier, integrator, or amplifier with operating characteristics as a function of the external
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MC1741C
Mo700
b3fci72S3
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CM150DY-12E
Abstract: VQE200 transistor FM E52 Gh737 BP107 Q026 ZMRN
Text: bHE D • TETMbSl 000b73b S7fl «PRX CM150DY-12E Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 powerex inc CM150DY-12E Dual IGBTMOD E-Series Module
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72cmb21
000b73b
CM150DY-12E
BP107,
Amperes/600
CM150DY-12E
VQE200
transistor FM E52
Gh737
BP107
Q026
ZMRN
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 -JU L Y 94_ FEATURES * 60 Volt V,DS ^DS on - 0 ,3 3 fl Spice model available APPLICATIONS * DC-DC convertors * Solenoids / relay drivers for automotive ABSOLUTE MAXIMUM RATINGS. PARAMETER
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Tamtp25Â
0Q1Q354
001G35S
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NDS9410 equivalent
Abstract: NDS9410
Text: National ÆlÆ Semiconductor November 1993 NDS9410 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, D M O S technology. This
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NDS9410
LSD1130
bSD113D
NDS9410 equivalent
NDS9410
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Untitled
Abstract: No abstract text available
Text: PD‘91880 International I R Rectifier IRFP460A smpsmosfet HEXFET Power MOSFET Applications • Switch Mode Power Supply SMPS • Uninterruptable Power Supply • High speed power switching V d ss 500V R d s (o n ) m a x 0.27£2 Id 20A Benefits • Low Gate Charge Qg results in Simple
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IRFP460A
AN1001)
Cu310)
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Untitled
Abstract: No abstract text available
Text: Digital Attenuator, 15.5 dB, 5 Bit DC-2 GHz Features ^ * * *July AT-280 ’93 SO-16 • Attenuation 0.5 dB Steps to 15.5 dB • Temperature Stability ± 0.15 dB from -40°C to +85°C Typical • Ultra Low DC Power Consumption • Low Intermodulation Products, IP3: 43 dBm
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AT-280
SO-16
16-LD
AT-280.
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Untitled
Abstract: No abstract text available
Text: g MOTOROLA M C3450 Quad MTTL Com patible Line Receivers The MC3450 features four MC75107 type active pullup line receivers with the addition of a common three-state strobe input. When the strobe input is at a logic zero, each receiver output state is determined by the differential
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C3450
MC3450
MC75107
MC3450
b3b7253
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