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    Untitled

    Abstract: No abstract text available
    Text: Infrared Emitting Diode Description The H E7601SG is a 770 nm band GaAIAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors.


    OCR Scan     		PDF E7601SG HE7601SG: HE7601SG

    L6312G

    Abstract: 8325G HL6314M L6313
    Text: Contents Product Lineup . Part Num bers.


    OCR Scan     		PDF HR1103CX. HR1104CX. HR1107CR. HR1201CX. L6312G 8325G HL6314M L6313

    hitachi he1301

    Abstract: HL7838G HL8312E laser GaAIAs de 5 mw 760 800 HE8807SG HE8813VG HE8815VG HL7838 Hitachi Scans-001 HE8403
    Text: HITACHI/ OPTOELECTRONICS S^E D • MM'JbSGS D0120142 S^fl « H I T 4 HL7838G GaAlAs LD Description The HL7838G is a 0.78 pm band GaAlAs laser diode with a double heterojunction structure and is appro­ priate as the light source for various optical application devices, including laser beam printers and laser


    OCR Scan     		PDF HL7838G D0120L42 HL7838G HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, hitachi he1301 HL8312E laser GaAIAs de 5 mw 760 800 HE8807SG HE8813VG HL7838 Hitachi Scans-001 HE8403