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Hitachi Ltd HE8812SG
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E8812SG Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Infrared Emitting Diode Description The H E8812SG is a GaAIAs double heterojunction structure 870 nm band light em itting diode. suitable for use as the light source in a wide range o f optical control and sensing equipment.	OCR Scan	PDF	E8812SG HE8812SG: HE8812SG
HL7801 Abstract: HL7806 Text: §2. Chip Structures 2.1 Laser Diodes Structures 2.1.1 GaAlAs LD Structure The p-type active layer, in which stimulated emission enforces optical amplification figure 2-1 (a , is processed first. The p-n junction is made here for injecting minority carriers (the p-n heterojunction).	OCR Scan	PDF

Catalog Datasheet

MFG & Type

PDF

Document Tags

Untitled

Abstract: No abstract text available
Text: Infrared Emitting Diode Description The H E8812SG is a GaAIAs double heterojunction structure 870 nm band light em itting diode. suitable for use as the light source in a wide range o f optical control and sensing equipment.

OCR Scan

PDF

E8812SG HE8812SG: HE8812SG

HL7801

Abstract: HL7806
Text: §2. Chip Structures 2.1 Laser Diodes Structures 2.1.1 GaAlAs LD Structure The p-type active layer, in which stimulated emission enforces optical amplification figure 2-1 (a , is processed first. The p-n junction is made here for injecting minority carriers (the p-n heterojunction).