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Abstract: No abstract text available
Text: I Ordering number : ENN6580 N P N Epitaxial P lan ar Silicon Transistor EC3H04C SANYO High-Frequency Low-Noise Amplifier and OSC Applications Features Package Dimensions • L o w noise : N F = 1 .7 d B typ f= 2 G H z . unit : mm • H ige c u t-o ff frequency : fT = 8 G H z typ (V C E = 1 V ).
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OCR Scan
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ENN6580
EC3H04C
EC3H04C]
E-CSP1008-4
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transistor zo 607
Abstract: ZO 607 MA EC3H04C
Text: Ordering number : ENN6580 EC3H04C NPN Epitaxial Planar Silicon Transistor EC3H04C High-Frequency Low-Noise Amplifier and OSC Applications Features [EC3H04C] 0.5 0.2 0.05 0.2 0.05 3 4 2 1 1 : Base 2 : Emitter 3 : Collector 4 : Collector 0.05 0.6 Bottom View
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Original
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ENN6580
EC3H04C
EC3H04C]
E-CSP1008-4
transistor zo 607
ZO 607 MA
EC3H04C
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EC3H04C
Abstract: 1652 PS
Text: 注文コード No. N 6 5 8 0 EC3H04C 三洋半導体データシート N EC3H04C 特長 NPN エピタキシァルプレーナ型シリコントランジスタ 高周波低雑音増幅 , 発振用 ・低雑音である：NF=1.7dB typ（f=2GHz） 。 ・しゃ断周波数が高い：fT=8GHz typ（VCE=1V）
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EC3H04C
EC3H04C
1652 PS
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zo 607 MA
Abstract: EC3H04C
Text: Ordering number : ENN6580 EC3H04C SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor EC3H04C High-Frequency Low-Noise Amplifier and OSC Applications Features • • • • Low noise : NF=1.7dB typ f=2GHz . Hige cut-off frequency : fT=8GHz typ (VCE=1V).
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Original
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ENN6580
EC3H04C
zo 607 MA
EC3H04C
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PDF
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