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    ED01 Search Results

    ED01 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MP-6A28GNSRED-010 Amphenol Cables on Demand Amphenol MP-6A28GNSRED-010 Slim Category-6a (Thin CAT6a) UTP 28-AWG Network Patch Cable (650-MHz) with Snagless RJ45 Connectors - Red 10ft Datasheet
    MP-6A28GNSRED-014 Amphenol Cables on Demand Amphenol MP-6A28GNSRED-014 Slim Category-6a (Thin CAT6a) UTP 28-AWG Network Patch Cable (650-MHz) with Snagless RJ45 Connectors - Red 14ft Datasheet
    CED013921112001 Amphenol Communications Solutions Double Density Cool Edge,storage and server connectors,SMT,392 signal pins, 0.8 mm,Vertical,2.36mm AIC Visit Amphenol Communications Solutions
    CED012481142001 Amphenol Communications Solutions Double Density Cool Edge, storage and server connectors, SMT, 248 signal pins, 0.8 mm, Vertical, 2.36mm AIC Visit Amphenol Communications Solutions
    CED012001142001 Amphenol Communications Solutions Double Density Cool Edge,storage and server connectors,SMT,200 signal pins, 0.8 mm,Vertical,2.36mm AIC Visit Amphenol Communications Solutions
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    ED01 Price and Stock

    STMicroelectronics L6384ED013TR

    IC GATE DRVR HALF-BRIDGE 8SO
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    DigiKey L6384ED013TR Digi-Reel 14,737 1
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    L6384ED013TR Reel 12,500 2,500
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    STMicroelectronics L6384ED013TR 1,486 1
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    TME L6384ED013TR 2,404 1
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    Chip 1 Exchange L6384ED013TR 14,100
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    Avnet Silica L6384ED013TR 65,000 17 Weeks 2,500
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    Chip Stock L6384ED013TR 80,000
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    Chip1Stop L6384ED013TR Cut Tape 2,200
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    L6384ED013TR 890
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    Win Source Electronics L6384ED013TR 62,500
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    STMicroelectronics L6387ED013TR

    IC GATE DRVR HALF-BRIDGE 8SO
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    DigiKey L6387ED013TR Cut Tape 8,091 1
    • 1 $1.5
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    L6387ED013TR Digi-Reel 8,091 1
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    L6387ED013TR Reel 7,500 2,500
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    Avnet Americas L6387ED013TR Reel 30 Weeks 2,500
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    Mouser Electronics L6387ED013TR 26,664
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    STMicroelectronics L6387ED013TR 26,664 1
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    TME L6387ED013TR 1
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    Avnet Silica L6387ED013TR 12,500 17 Weeks 2,500
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    EBV Elektronik L6387ED013TR 31 Weeks 2,500
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    Amphenol Communications Solutions CED014281112001

    CONN EDGE DUAL FML 428POS 0.031
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    DigiKey CED014281112001 Tray 1,589 1
    • 1 $44.78
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    Newark CED014281112001 Bulk 50 1
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    Varitronix MDLS-16263-C-LV-G-LED01G-FFC

    LCD MOD 32DIG 16X2 TRANSFLCT GRN
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    DigiKey MDLS-16263-C-LV-G-LED01G-FFC Box 838 1
    • 1 $15.97
    • 10 $12.074
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    Amphenol Communications Solutions CED012841142001

    CONN EDGE DUAL FML 284POS 0.031
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    DigiKey CED012841142001 Cut Tape 170 1
    • 1 $37.43
    • 10 $30.679
    • 100 $25.8922
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    CED012841142001 Digi-Reel 170 1
    • 1 $37.43
    • 10 $30.679
    • 100 $25.8922
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    CED012841142001 Reel 170 170
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    • 1000 $21.68541
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    Newark CED012841142001 Cut Tape 50 1
    • 1 $6.74
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    Find more ED01 price and stock on Findchips.com

    ED01 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ED-010UOR Opto Tech AlGaInP/GaAs Ultrabright LED Chip Original PDF
    ED-010UOV Opto Tech AlGaInP/GaAs Ultrabright LED Chip Original PDF

    ED01 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    T545H158M006ATE055

    Abstract: No abstract text available
    Text: KEMET High Energy Polymer Pulse Capacitor T545 Series - Polymer, Low ESR, High Energy Preliminary Product Specification Date Code 2nd & 3rd Digit = Week 22= 22nd week 1st Digit = Year 4=2004 5=2005 6=2006 7=2007 8=2008 9=2009 0=2010 1=2011 2=2012 Component Dimensions mm


    Original     		PDF

    HD44100 HD44780

    Abstract: hd44780 LCD HD44100 lcd lcd display hd44780, hd44100 HD44100 hd44780a lcd hd44780a AC100 HD44780 R303H
    Text: LCD 模块使用手册 目 录 1. 使用范围-2 2. 质量保证-2 3. 性能特点-2 4. 外形图-6


    Original     		PDF 96hrs HD44100 HD44780 hd44780 LCD HD44100 lcd lcd display hd44780, hd44100 HD44100 hd44780a lcd hd44780a AC100 HD44780 R303H

    Untitled

    Abstract: No abstract text available
    Text: ED-011IRC GaAs/GaAs IrED Chips 940 nm Features : Typical Applications : • GaAs/GaAs wafer • Good spectral matched to si detector • Peripheral Device • Photocoupler • Photointerrupter Outline Dimensions : Unit: um 245 260 260 p-Electrode p-GaAs epi layer


    Original     		PDF ED-011IRC 105um 245um 280um 260um 260um 02OPTOELECTRONIC

    Untitled

    Abstract: No abstract text available
    Text: ED-016IRA AlGaAs/GaAs IrED Chips 940 nm Features : Typical Applications : • AlGaAs/GaAs wafer • Good spectral matched to si detector • High power • Low forward voltage • Remote Controller • Pperipheral Device • Photocoupler • Photointerrupter


    Original     		PDF ED-016IRA 130um 370um 280um 385um 385um

    ED-012UY

    Abstract: No abstract text available
    Text: ED-012UY AlGaInP/GaAs Ultrabright LED Chips Amber Features : Typical Applications : • MOVPE epi wafer • Suitable for new creative products • Snake-back free • Automotive Signal Lamps: Front/ Rear Turns • Traffic Signal Modules/ Traffic Signs • Semi-Outdoor Panels


    Original     		PDF ED-012UY ED-012UY

    ED-014UR

    Abstract: Opto Tech
    Text: ED-014UR AlGaAs/AlGaAs LED Chips Red „ Typical Applications : „ Features : • AlGaAs/AlGaAs epi wafer • DDH structure • Ultra brightness • Lamp • Display „ Outline Dimensions : Unit: um 335 320 n-Electrode 130 335 n-Electrode n-AlGaAs epi layer


    Original     		PDF ED-014UR ED-014UR Opto Tech

    ED-011SR

    Abstract: No abstract text available
    Text: ED-011SR AlGaAs/GaAs LED Chips Red Features : Typical Applications : • AlGaAs/GaAs epi wafer • Single heterojunction structure • Lamp • Display • Dot Matrix Outline Dimensions : Unit: um 260 245 n-Electrode n-AlGaAs epi layer p-AlGaAs epi layer


    Original     		PDF ED-011SR ED-011SR

    Untitled

    Abstract: No abstract text available
    Text: ED-011AHO AlGaAs/GaAs LED Chips Red Features : Typical Applications : • AlGaAs/GaAs epi wafer • Single heterojunction structure • Lamp • Dot Matrix Outline Dimensions : Unit:um 260 245 n-Electrode n-AlGaAs epi layer p-AlGaAs epi layer n-Electrode


    Original     		PDF ED-011AHO

    385 iv

    Abstract: No abstract text available
    Text: ED-016UYL AlGaInP/GaAs Ultrabright LED Chips Amber Features : Typical Applications : • MOVPE process wafer • Suitable for new creative products • Traffic Signs Modules: Pedestrian Signs • Advertising Signs and Marquees • lndustrial Products Outline Dimensions : Unit: um


    Original     		PDF ED-016UYL 385 iv

    Untitled

    Abstract: No abstract text available
    Text: ED-011YGHG GaP/GaP LED Chips Greenish-Yellow Features : Typical Applications : • GaP epi wafer • Lamp • SMD • Disply Outline Dimensions : Unit: um 235 220 p-Electrode p-GaP epi layer n-GaP epi layer 235 p-Electrode 120 255 n-GaP Substrate Emission area


    Original     		PDF ED-011YGHG

    ED-014IRA

    Abstract: GaAs wafer ED-014
    Text: ED-014IRA AlGaAs/GaAs IrED Chips 940 nm ! Typical Applications : ! Features : • AlGaAs/GaAs wafer • remote controller • good spectral matched to Si detector • peripherals • high power • photocoupler • low forward voltage • photointerrupter


    Original     		PDF ED-014IRA ED-014IRA GaAs wafer ED-014

    420um

    Abstract: No abstract text available
    Text: ED-018IRC GaAs/GaAs IrED Chips 940 nm Features : Typical Applications : • GaAs/GaAs wafer • Good spectral matched to si detector • Peripheral Device • Photocoupler • Photointerrupter Outline Dimensions : Unit: um 435 420 p-Electrode p-GaAs epi layer


    Original     		PDF ED-018IRC 140um 420um 280um 435umx 435um 420um

    smd UM 08

    Abstract: No abstract text available
    Text: ED-011PG GaP/GaP LED Chips Pure-Green Features : Typical Applications : • GaP epi wafer • Lamp • SMD • Display • Dot Matrix Outline Dimensions : Unit: um 260 245 p-Electrode p-GaP epi layer n-GaP epi layer 260 p-Electrode 115 275 n-GaP Substrate


    Original     		PDF ED-011PG smd UM 08

    Untitled

    Abstract: No abstract text available
    Text: ED-011YGHU GaP/GaP LED Chips Greenish-Yellow Features : Typical Applications : • GaP epi wafer • Display • Dot Matrix Outline Dimensions : Unit: um 235 220 p-Electrode p-GaP epi layer n-GaP epi layer 235 p-Electrode 120 255 n-GaP Substrate Emission area


    Original     		PDF ED-011YGHU

    Untitled

    Abstract: No abstract text available
    Text: ED-011RDN GaP/GaP LED Chips Red Features : Typical Applications : • GaP epi wafer • Lamp • SMD Outline Dimensions : Unit: um 210 195 p-Electrode p-GaP epi layer n-GaP epi layer p-Electrode 115 210 265 n-GaP Substrate Emission area 210 n-Electrode Physical Structure :


    Original     		PDF ED-011RDN 20Fig

    dd-103

    Abstract: dd103 DD102 ED04 marking db6 CD102 CD105 CD110 ED01 13511
    Text: 3 Terminal blocks 3 Screw technology Passthrough, with Telequick universal foot Clip-on mounting on 35 mm 1 7 4 rails and Telequick pre-slotted mounting plate Nominal c.s.a. 4 mm2 a H DB6 CD10p b Dimensions in mm Length a Width (b) 1 Height (H) with 1 rail


    Original     		PDF CD10p 10-pole XA335983 13553-EN dd-103 dd103 DD102 ED04 marking db6 CD102 CD105 CD110 ED01 13511

    p 628 Opto

    Abstract: ED-012UORS
    Text: ED-012UORS AlGaInP/GaAs Ultrabright LED Chips Red Features : Typical Applications : • MOVPE epi wafer • Suitable for new creative products • Snake-back free • Automotive Signal Lamps: Center High Mount Stop Lights • Traffic Signs • Semi-Outdoor Panels


    Original     		PDF ED-012UORS p 628 Opto ED-012UORS

    Untitled

    Abstract: No abstract text available
    Text: ED-012SO GaAsP/GaP LED Chips Orange Features : Typical Applications : • GaAsP/GaP epi wafer • Lamp • SMD • Display • Dot Matrix Outline Dimensions : Unit:um 285 270 p-Electrode p-Diffusion layer 285 n-GaAsP epi layer p-Electrode 130 255 n-GaP substrate


    Original     		PDF ED-012SO

    Untitled

    Abstract: No abstract text available
    Text: ED-011YGH GaP/GaP LED Chips Greenish-Yellow Features : Typical Applications : • GaP epi wafer • Lamp • SMD • Display Outline Dimensions : Unit: um 235 220 p-Electrode p-GaP epi layer n-GaP epi layer 235 p-Electrode 120 255 n-GaP Substrate Emission area


    Original     		PDF ED-011YGH

    HT2 material

    Abstract: HR76 UW3804X ED016354 272002
    Text: lE-f SYM. e « ZONE i E REVISIONS REV. NO as* B ft DATE NTF.NO. REV-BY ED016354 2002-03-27 S r0 ^ i T /ISSUE OF NEW DWG. A ih S ^ /O u tlin e £ JE ♦ mm D im e n s io n s / NOTES: Leave a minimum cle a ra n ce of 1.6mm from the resin to bend 2. ^ f s b < s a i b T f c i ) it.


    OCR Scan     		PDF ed016354 ED016354) UW3804X UW30U4A HT2 material HR76 272002

    7-338728-6

    Abstract: ct308
    Text: THIS DRAWI NG IS UNPUBLISHED. DATE: ALL C O P Y R I G H T 2011 RIGHTS R E V IS IO N S - RESERVED. DESCRIPTION ED01-0232-04 16 FEB 04 PDJ EC R - 0 6 - 0 1 4 8 2 4 19 1UN 06 JvdH EC R - 1 0 - 0 2 6 5 4 2 25MAY2011 KK OMR 8 - 8-11 SP RP PART NUMBER REACTIVATION


    OCR Scan     		PDF ED01-0232-04 25MAY2011 7-338728-6 ct308

    ED-03

    Abstract: ed03 eel -16-2005 ed02 ic 353 SAB1
    Text: CONNOR-lüINFIEL» MbE CORP T> 23143431 m 00003bM T «CNIü AURORA. CONNOR-WINFIELD CORPORATION PHONE IL. 708 FAX T-50-23 (708) 60505 851-4722 851-5040 OSCILLATORS 16 PIN DIP ECL ED01-353-* 1 ED02-353-* SPECIFICATIONS Frequency Range Frequency S t a b 1 1 1t y


    OCR Scan     		PDF 23M3M31 00003bM T-50-23 ED01-353-* ED02-353-* ED03-353-* 200MHz 500MHz /-100p 100mA ED-03 ed03 eel -16-2005 ed02 ic 353 SAB1

    Untitled

    Abstract: No abstract text available
    Text: %n * * REVISIO N S a ZONE e SYM. StUÌSMt / ISSUE OF NEW DWG. / A r 2013/04/19 i o / A ÿ f lH lÊ f i' / ISSUE OF REVISED DWG. 30652 u\ T r// . Ä REV. NO, 2 - i íine dimensions B B ft DATE a# # * N TF. NO. R E V .B Y ED014742 2001.08.22 ED026971 2005 *11-11


    OCR Scan     		PDF ED014742 ED026971 D026971) BR1113F-15-TR D04B9)

    smd TRANSISTOR code marking 6k

    Abstract: marking code E2 p SMD Transistor Transistor sae 103 TRANSISTOR SMD MARKING CODE pv marking code m3 SMD ic siemens PV smd transistor MARKING SMD npn TRANSISTOR DJ smd transistor marking wa TIL 81 application note marking code e2 SMD Transistor
    Text: SIEMENS Programmable Single-/Dual-/Triple- Tone Gong SAE 800 Preliminary Data Bipolar 1C Features • • • • • • • • • Supply voltage range 2.8 V to 18 V Few external components no electrolytic capacitor 1 tone, 2 tones, 3 tones programmable


    OCR Scan     		PDF Q67000-A8339 Q67000-A8340 52toa smd TRANSISTOR code marking 6k marking code E2 p SMD Transistor Transistor sae 103 TRANSISTOR SMD MARKING CODE pv marking code m3 SMD ic siemens PV smd transistor MARKING SMD npn TRANSISTOR DJ smd transistor marking wa TIL 81 application note marking code e2 SMD Transistor