t1is
Abstract: EDI8F8512C EDI8F8512C70BSC EDI8F8512LP EDI8F8512LP100B6C
Text: E L E C T R O N IC D E S IG N S SIE 1 IN C • 323011M OOOlllb TO'! B E L D EDI8F8512C ^B *dronte E D««igns D Inc. I ■ Commercial Four Megabit SRAM Module 512Kx8 Static RAM CMOS, Module ■ W 6 -2 J - /V Features The ED18F8512C is a 4096K bit CMOS Static RAM
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3E30im
EDI8F8512C
512Kx8
EDI8F8512C
4096K
128Kx8
28Kx8
The32pin
EDI8F8512LP)
EDI8F8512C85B6C
t1is
EDI8F8512C70BSC
EDI8F8512LP
EDI8F8512LP100B6C
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ed18f8512
Abstract: ED18F8512C
Text: WDi EDI8F8512C/LP/P Electronic Designs In c.- Commercial Four Megabit SRAM Module lyiDiÄiv 512Kx8 Static RAM CMOS, Module Features The ED18F8512C/LP/P is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate.
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EDI8F8512C/LP/P
512Kx8
ED18F8512C/LP/P
4096K
128Kx8
the128Kx8
ed18f8512
ED18F8512C
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Untitled
Abstract: No abstract text available
Text: ELECTRONIC DESIGNS INC 30 E D • 32301m 0000730 M ■ EDI8F8512C/LP/P m D i Ettekonle Dtslgni In«. • Commercial Four Megabit S R A M Module 512Kx8 Static R A M CM O S, Module P IS lU iO Features iá O T T - V 6 - Z 3 - H The EDI8F8512C/LP/P is a 4096K b'lt CMOS Static 512Kx8 bit CMOS Static
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32301m
EDI8F8512C/LP/P
512Kx8
EDI8F8512C/LP/P
4096K
128Kx8
150ns
T-46-23-14
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T1IS
Abstract: GQQ0731 ragy 3530114
Text: ELECTRONIC DESIGNS INC 30 E D • 32301m 0000730 M ■ EDI8F8512C/LP/P m D i Ettekonle Dtslgni In«. • Commercial Four Megabit S R A M Module 512Kx8 Static R A M CM O S, Module P IS lU iO Features iá O T T - V 6 - Z 3 - H The EDI8F8512C/LP/P is a 4096K b'lt CMOS Static 512Kx8 bit CMOS Static
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EDI8F8512C/LP/P
512Kx8
EDI8F8512C/LP/P
4096K
128Kx8
28Kx8
G0G0734
T-46-23-14
353011M
T1IS
GQQ0731
ragy
3530114
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ed18f8512
Abstract: EDI8F8512C45M6C EDI8F8512C EDI8F8512LP 256Kx4 SRAM SX-SS ED18F8512C
Text: ^ED I EDI8F8512C ELECTRONIC DESIGNS INC. Commercial Four Megabit SRAM Module 512Kx8 Static RAM CMOS, Module Features The EDI8F8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 or256Kx4 high speed Static RAMs mounted on a multi-layered epoxy laminate (FR4) sub
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EDI8F8512C
512Kx8
EDI8F8512C
4096K
128Kx8
or256Kx4
the128Kx8
256Kx4
EDI8F8512LP)
ed18f8512
EDI8F8512C45M6C
EDI8F8512LP
256Kx4 SRAM
SX-SS
ED18F8512C
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ed18f8512
Abstract: ED18F8512C7066C
Text: ^EDI EDI8F8512C S12Kx8 Static Ram ELECTRONIC QESKSN& MC 512Kx8 Static RAM CMOS, Module Features 512Kx8 bit CMOS Static Random Access Memory • Access Times 20 thru 100ns • Data Retention Function EDI8F8512LP • TTL Compatible Inputs and Outputs • Fully Static, No Clocks
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EDI8F8512C
S12Kx8
512Kx8
100ns
EDI8F8512LP)
70-100ns)
20-35ns)
4096K
ed18f8512
ED18F8512C7066C
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Untitled
Abstract: No abstract text available
Text: W D EDI8F8512C I ELECTRONIC DESIGNS INC. Commercial Four Megabit SRAM Module 512Kx8 Static RAM Features CMOS, Module The EDI8F8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 or256Kx4 high speed Static RAMs 512Kx8 bit CMOS Static Random Access Memory
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OCR Scan
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PDF
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EDI8F8512C
512Kx8
EDI8F8512C
4096K
128Kx8
or256Kx4
100ns
EDI8F8512LP)
the128Kx8
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