"Electronic designs inc"
Abstract: 24128 EDI414097C70BB EDI414097C70LZB EDI414097C70LZI EDI414097C80BB EDI414097C80LZB
Text: ^EDI EDI414097C 4Megx1 Fast Page DRAM ELECTRONIC DESIGNS, INC ' 4Megabitx 1 Dynamic RAM CMOS, Monolithic The EDI414097C is a high performance, low power CMOS Dynamic RAM organized as 4Megabit x1. During Read and Write cycles each bit is addressed through 22 address bits which are entered 11 at a time A0
|
OCR Scan
|
PDF
|
EDI414097C
100ns
EDI414097C
"Electronic designs inc"
24128
EDI414097C70BB
EDI414097C70LZB
EDI414097C70LZI
EDI414097C80BB
EDI414097C80LZB
|
Untitled
Abstract: No abstract text available
Text: EDI414097C MDi Electronic Dôiign» Inc. • High Performance Four Megabit Monolithic DRAM 4Mx1 Dynamic RAM CMOS, Monolithic Features The EDI414097C is a high performance, low power CMOS Dynamic RAM organized as 4Megabit x1. During Read and Write cycles each bit is addressed
|
OCR Scan
|
PDF
|
EDI414097C
EDI414097C
EDI414097C70LZB
EDI414097C80LZB
ED1414097C100LZB
|
Untitled
Abstract: No abstract text available
Text: ^EDl EDI414097C 4Megx1 Fast Page DRAM ELfCTROMCDESGN&NC 4M egabitx 1 Dynamic RAM CMOS, Monolithic F e a tu re s 4Mx1 bit CMOS Dynamic Random Access Memory • Access Times 70,80,100ns • 16ms Refresh Rate • Low Operating Power Dissipation • Low Standby Power
|
OCR Scan
|
PDF
|
EDI414097C
EDI414097C
entered11atatime
38cC/W
050TYÎ
01581USA
|
Untitled
Abstract: No abstract text available
Text: ^EDI EDI414097C 4Megx1 Fast Page DRAM ELECTRONIC DESIGNS, INC ' 4Megabitx 1 Dynamic RAM CMOS, Monolithic The EDI414097C is a high performance, low power CMOS ¡Features Dynamic RAM organized as 4Megabit x1. During Read and W rite cycles each bit is addressed
|
OCR Scan
|
PDF
|
EDI414097C
EDI414097C
100ns
24/28Pin
|