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    EDI8M8512 Search Results

    EDI8M8512 Datasheets (41)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    EDI8M8512C Electronics Designs High Speed Four Megabit Sram Module Scan PDF
    EDI8M8512C Unknown HIGH SPEED FOUR MEGABIT SRAM MODULE Scan PDF
    EDI8M8512C Unknown HIGH SPEED FOUR MEGABIT SRAM MODULE Scan PDF
    EDI8M8512C100 Electronic Designs 512K x 8 SRAM CMOS, High Speed Module Scan PDF
    EDI8M8512C100C6B Electronic Designs 512K x 8 SRAM CMOS, High Speed Module Scan PDF
    EDI8M8512C100C6B Electronic Designs HIGH SPEED FOUR MEGABIT SRAM MODULE Scan PDF
    EDI8M8512C100C6C Electronic Designs 512K x 8 SRAM CMOS, High Speed Module Scan PDF
    EDI8M8512C100P6C Electronic Designs 512K x 8 SRAM CMOS, High Speed Module Scan PDF
    EDI8M8512C120 Electronic Designs 512K x 8 SRAM CMOS, High Speed Module Scan PDF
    EDI8M8512C120C6B Electronic Designs 512K x 8 SRAM CMOS, High Speed Module Scan PDF
    EDI8M8512C120C6B Electronic Designs HIGH SPEED FOUR MEGABIT SRAM MODULE Scan PDF
    EDI8M8512C120C6C Electronic Designs 512K x 8 SRAM CMOS, High Speed Module Scan PDF
    EDI8M8512C120P6C Electronic Designs 512K x 8 SRAM CMOS, High Speed Module Scan PDF
    EDI8M8512C150 Electronic Designs 512K x 8 SRAM CMOS, High Speed Module Scan PDF
    EDI8M8512C150C6B Electronic Designs 512K x 8 SRAM CMOS, High Speed Module Scan PDF
    EDI8M8512C150C6B Electronic Designs HIGH SPEED FOUR MEGABIT SRAM MODULE Scan PDF
    EDI8M8512C150C6C Electronic Designs 512K x 8 SRAM CMOS, High Speed Module Scan PDF
    EDI8M8512C150P6C Electronic Designs 512K x 8 SRAM CMOS, High Speed Module Scan PDF
    EDI8M8512C25C6B Unknown HIGH SPEED FOUR MEGABIT SRAM MODULE Scan PDF
    EDI8M8512C30C6B Unknown HIGH SPEED FOUR MEGABIT SRAM MODULE Scan PDF

    EDI8M8512 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    EDI88512CA20NB

    Abstract: EDI88512CA45 and45ns TM315
    Text: EDI88512CA m o \ ELECTRONIC D ESG N S INC. Four Megabit Monolithic SRAM 512Kx8 Static RAM CMOS, Monolithic r a The 32 pin DIP pinout adheres to the JEDEC evolu­ tionary standard for the four megabit device and is a replacement for the 512K x 8 module, EDI8M8512C. All


    OCR Scan     		EDI88512CA 512Kx8 EDI88512CA EDI8M8512C. EDI88128CS. EDI88512CA20NB EDI88512CA45 and45ns TM315 PDF

    EDI8M8512LP120C6B

    Abstract: No abstract text available
    Text: ^EDI EDI8M8512C Electronic Designs Inc. High Speed Four Megabit SRAM Module 512Kx8 Static RAM Features CMOS, Module The EDI8M8512C is a 4096K bit CMOS Static RAM 512Kx8 bit CMOS Static based on four 128Kx8 Static RAMs mounted on a multi­ Random Access Memory


    OCR Scan     		EDI8M8512C 512Kx8 150ns 150ns EDI8M8512C 4096K 128Kx8 sLP70C6C EDI8M8512LP85C6B EDI8M8512LP120C6B PDF

    EDI88128C

    Abstract: EDI8M8512C
    Text: EDI8M8512C m 90/100/120/150 o \ Module The f u t u r s . . . Ä ¥ Ä M 1 O 512Kx8 SRAM CMOS, High Speed Module The EDI8M8512C is a 4096K 512Kx8 bit High Speed Static RAM module constructed using four EDI88128C (128Kx8) Static RAMs in leadless chip


    OCR Scan     		EDI8M8512C 512Kx8 EDI8M8512C 4096K EDI88128C 128Kx8) 128Kx8 32-pin, EDI88128C PDF

    DODI151

    Abstract: EDI8M8512C EDI8M8512LP
    Text: ^E D I EDI8 M8512 C Electronic Designs Inc. • High Speed Four Megabit SRAM Module 512Kx8 Static RAM CMOS, Module Features The EDI8M8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a multi­ layered ceramic substrate. Functional equivalence to the monolithic four mega­


    OCR Scan     		EDI8M8512C 512Kx8 EDI8M8512C 4096K 128Kx8 the128Kx8 EDI8M8512LP) EDI8M8512C85C6B EDI8M8512C85C6I. DODI151 EDI8M8512LP PDF

    QDQ0745

    Abstract: No abstract text available
    Text: ELECTRONIC m o D ESIG N S INC 3QE D • 3230114 Q00Q741 ■ EDI8M8512C/LP/P i Electronic D»t!gni Inc. High Speed Four Megabit S R A M Module 512Kx8 Static R A M C M O S, Module L O if llM m T Features T -H 6 -2 3 -W The EDI8M8512C/LP/P is a 4096K bit CMOS Static 512Kx8 bit CMOS Static


    OCR Scan     		EDI8M8512C/LP/P 512Kx8 EDI8M8512C/LP/P 4096K 128Kx8 28Kx8 0Q0a74a 85-160ns T-46-23-14 QDQ0745 PDF

    EDI8M8512C

    Abstract: EDI8M8512C25C6B EDI8M8512C30C6B EDI8M8512C35C6B EDI8M8512C45C6B EDI8M8512LP TTL 154
    Text: ^EDI EDI8M8512C Electronic Designs Inc. , High Speed Four Megabit SRAM Module 512Kx8 Static RAM CMOS Module Features The EDI8M8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a multi­ layered ceramic substrate. Functional equivalence to the monolithic four mega­


    OCR Scan     		EDI8M8512C 512Kx8 EDI8M8512C 4096K 128Kx8 the128Kx8 EDI8M8512LP) EDI8M8512C85C6B EDI8M8512C85C6I. EDI8M8512C25C6B EDI8M8512C30C6B EDI8M8512C35C6B EDI8M8512C45C6B EDI8M8512LP TTL 154 PDF

    A17-A18j

    Abstract: 2555N
    Text: ^ EDI EDI8M8512C Electronic Designs Inc. High Speed Four Megabit SRAM Module 512Kx8 Static RAM CMOS, Module Features The EDI8M8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a multi­ layered ceramic substrate. Functional equivalence to the monolithic four mega­


    OCR Scan     		EDI8M8512C 512Kx8 4096K 128Kx8 the128Kx8 EDI8M8512LP) EDI8M8512C85C6B EDI8M8512C85C6I. A17-A18j 2555N PDF

    stm cl 120

    Abstract: EDI8M8512C EDI8M8512LP
    Text: ELECTRONIC DESIGNS SIE D INC • 3230114 0001B78 137 ■ E L D EDI8M8512C ^ EDI Btdronk: D«dgns Inc. ■ High Speed Four Megabit SRAM Module 512Kx8 Static RAM CMOS, Module PiiyMfliMiY Features The EDI8M8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a multi­


    OCR Scan     		EDI8M8512C 512Kx8 EDI8M8512C 4096K 128Kx8 28Kx8 EDI8M8512LP) ouI8M8512LP85P6C EDI8M8512LP100P6C EDI8M8512LP120P6C stm cl 120 EDI8M8512LP PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI8M8512C m / o \ / 90 100 120/150 The fu tu re . . . today. • ■ ■ ■ ■ ■ ■ ■ ■ ■ ü H M Module H H B e OKIIFÛI^MIÂTÔÛINI 512Kx8 SRAM CMOS, High Speed Module Features The EDI8M8512C is a 4096K 512Kx8 bit High Speed Static RAM module constructed using four


    OCR Scan     		EDI8M8512C 512Kx8 EDI8M8512C 4096K EDI88128C 128Kx8) 128Kx8 32-pin, PDF

    Th62

    Abstract: A17-A18j LA 4570 F LTDV
    Text: EDI8M8512C/LP/P Electronic Dttlgiii Inc.- High Speed Four Megabit SRAM Module 512Kx8 Static RAM CMOS, Module r a iU illM G W Features T -H é -1 3 -H The EDI8M8512C/LP/P isa4096K bit CMOS Static 512KxS bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a Random Access Memory


    OCR Scan     		EDI8M8512C/LP/P 512Kx8 EDI8M8512C/LP/P 4096K 128Kx8 28Kx8 85-150ns T-46-23-14 Th62 A17-A18j LA 4570 F LTDV PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI8M8512C ^ED I Electronic Dttipni inc. High Speed Four Megabit SRAM Module 512Kx8 Static RAM CMOS, Module Features The EDI8M8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a multi­ layered ceramic substrate. Functional equivalence to the monolithic four megabit


    OCR Scan     		EDI8M8512C 512Kx8 EDI8M8512C 4096K 128Kx8 28Kx8 150ns ve8M8512C100P6C PDF

    4570 IC PINOUT

    Abstract: ic 4570 PINOUT 4570 chip ic
    Text: ^EDI EDI8M8512C/LP/P Electronic 0#»lgn* In c .- High Speed Four Megabit SRAM Module 512Kx8 Static RAM CMOS, Module Features The EDI8M8512C/LP/P is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a multi-layered ceramic substrate. Functional equivalence to the monolithic four mega­


    OCR Scan     		EDI8M8512C/LP/P 512Kx8 150ns EDI8M8512C/LP/P 4096K 128Kx8 /77T777/77/ 85-150ns 4570 IC PINOUT ic 4570 PINOUT 4570 chip ic PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ED I EDI8M8512C B «ctonie D«rigns Inc. High Speed Four Megabit SRAM Module ^ E U iO iM Y 512Kx8 Static RAM CMOS, Module Features The EDI8M8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a multi­ layered ceramic substrate.


    OCR Scan     		EDI8M8512C 512Kx8 150ns 150ns EDI8M8512C 4096K 128Kx8 EDI8M8512C35C6B EDI8M8512C45C6B PDF

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI88512C ELECTRONIC DESIGNS INC. Four Megabit Monolithic SRAM 512Kx8 Static RAM r a i u i i i M c w CMOS, Monolithic Features The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. The 32 pin DIP pinout adheres to the JEDEC stan­ dard for the four megabit device and is a pin for pin


    OCR Scan     		EDI88512C 512Kx8 EDI88512C EDI8M8512C. 128Kx EDI88128C. EDI88512LP) MIL-STD-883, PDF

    ED188512CA20N36B

    Abstract: ED188512CA25CB ED188512CA20 75B7 EDI88512CA20N36B EDI88512LPA20F32B EDI88128CS EDI88512CA EDI88512LPA EDI8M8512C
    Text: W5X EDI88512CA 512Kx8 Static Ram ELECTRONIC DESIGNS, INC 512Kx8 Static RAM CMOS, Monolithic Features 512Kx8 bit CMOS Static Random Access Memory The EDI88512CA is a 4 megabit Monolithic CMOS Static • Access Times: 17*, 2 0 ,2 5 ,3 5 , and 45ns • Data Retention Function LP version


    OCR Scan     		EDI88512CA 512Kx8 15qC/W 20X/W 01581USA EDIBB512CA 6/96ECO ED188512CA20N36B ED188512CA25CB ED188512CA20 75B7 EDI88512CA20N36B EDI88512LPA20F32B EDI88128CS EDI88512CA EDI88512LPA EDI8M8512C PDF

    edi8832

    Abstract: EDI8834
    Text: ^EDI Static RAM Selector Guide Electronic D««lgna Inc. Static RAMs for High Performance Systems, Commercial and Miilitary; Monolithic and Modules Electronic Designs Incorporated is a lead­ ing international supplierof high-performance, high-reliability Static RAM products to all seg­


    OCR Scan     		PDF

    EDI88512LPA17NI

    Abstract: No abstract text available
    Text: W D EDI88512CA \ 512Kx8 Static Ram ELECTRONIC DESIGNS, INC. 512Kx8 Static RAM CMOS, Monolithic Features 512Kx8 bit CMOS Static Random Access Memory The EDI88512CA is a 4 megabit Monolithic CMOS Static • Access Times: 17*, 2 0 ,2 5 ,3 5 , and 45ns • Data Retention Function LP version


    OCR Scan     		EDI88512CA 512Kx8 EDI88512CA EDI8M8512C. 6/96ECO EDI88512LPA17NI PDF

    7587 GE

    Abstract: EDI88512CA17N361 EDI88512LPA20F32B EDI88512CA20N36B
    Text: W D EDI88512CA \ 512Kx8 Static Ram ELECTRONIC DESIGNS, INC. 512m Static RAM CMOS, Monolithic Features 512Kx8 bit CMOS Static Random Access Memory The EDI88512CA is a 4 megabit Monolithic CMOS Static • Access Times: 1T 2 0 ,2 5 ,3 5 , and 45ns • Data Retention Function LP version


    OCR Scan     		EDI88512CA 512Kx8 EDI88512CA EDI8M8512C. EDI88128CS. 20VA/V 6/96ECO 7587 GE EDI88512CA17N361 EDI88512LPA20F32B EDI88512CA20N36B PDF

    EDI8M8512L

    Abstract: No abstract text available
    Text: ^EDI Packaging Cross Reference Electronic Designs Inc. by Part Number No. Pins 31 40 31 40 26 52 TBD 36 TBD 36 TBD TBD TBD TBD 26 52 26 52 25 28 27 32 25 28 27 32 78 20 16 20/26 1 18 18 20 16 20/26 18 20 16 2026 18 20 16 20/26 4 20 18 20 13 28 76 28 22 28


    OCR Scan     		EDH816H64CX2 EDI88128PXXNM EDI88130CSXXNB 188130LPSXXNB EDI88130PSXXNB 188128CXXLB EDI88128CXXLM EDI88128LPXXLB EDI88128LPXXLM EDI88128PXXLB EDI8M8512L PDF

    64kx4 DRAM

    Abstract: SRAM 6T PS-136 4Kx1 DRAM EDI8F8512LP MILITARY 4Kx1 SRAM 5962-89598 EDI8833LP 32kx8 bit low power cmos sram edi84256
    Text: EDI8833C/LP/P ^E D I Electronic Designs Inc. High Speed 256K Monolithic SRAM 32Kx8 Static RAM CMOS, Monolithic u m m Features The EDI8833C/LP/P is a high speed, high perform­ ance, low power, 262,144bit C M O S Static R A M orga­ 32Kx8 bit C M O S Static


    OCR Scan     		EDI8833C/LP/P 32Kx8 EDI8833C/LP/P 144bit 32Kx8. MIL-STD-883, 64Kx4 EDI8466CB. 256Kx1 EDI81256C/LP/P. 64kx4 DRAM SRAM 6T PS-136 4Kx1 DRAM EDI8F8512LP MILITARY 4Kx1 SRAM 5962-89598 EDI8833LP 32kx8 bit low power cmos sram edi84256 PDF

    128kx8

    Abstract: EDI88130 32 PIN edi84256
    Text: moi Selector Guide ELECTRONIC DESIGNS INC. Density Oraanization Part No. Speed ns Max Current (mAl Packaae Paae x32 Flash 4 Megabits 4 Megabits 128KX32 4 Megabits 4 Megabits 128KX32 128Kx32 EDI7C32128C-JM EDI7M32128C-GB 120-200 120-200 250 250 68 lead JLCC


    OCR Scan     		128KX32 EDI7C32128C-JM EDI7M32128C-GB EDI5C32128C-JM EDI5M32128C-GB 64KX32 128KX32 128kx8 EDI88130 32 PIN edi84256 PDF

    ED188512CA17

    Abstract: EDI88512CA20N36B 2A153 ED188512CA
    Text: W D\ EDI88512CA 512Kx8 Static Ram ELÈCTRON« 0ESK3N& NC. 512Kx8Static RAM CMOS, Monolithic Features 512Kx8 bit CMOS Static Random Access Memory • Access Times: 17*, 20,25,35, and 45ns The EDI88512CA is a 4 megabit Monolithic CMOS Static RAM. • Data Retention Function LP version


    OCR Scan     		EDI88512CA 512Kx8 512Kx8Static EDI88512CA 15X/W 01581USA ED188512CA17 EDI88512CA20N36B 2A153 ED188512CA PDF

    synchronous sram

    Abstract: 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832
    Text: ^EDI_ Electronic DMlgrw Inc. ^ by Part Number _ _ _ Part No. Tvoe Density Ora EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C SRAM Module Synchronous SRAM, Latched I/O, 1CLK Synchronous SRAM, Registered I/O, 1CLK


    OCR Scan     		EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C synchronous sram 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832 PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI88512C ^aecTROac E œseN& D NC I 512Kx8 Static Ram 512Kx8 Static RAM CMOS, Monolithic Features 512Kx8 bit CMOS Static Random Access Memory • Access Times: 55,70,85 and 100ns • Data Retention Function LP version • TTL Compatible Inputs and Outputs


    OCR Scan     		512Kx8 EDI88512C 100ns EDI88512C EDI8M8512C. EDI88128C. EDI88512C100CB PDF