PDM41257SA15D
Abstract: Paradigm 41256 PDM41024S20L32 PDM41024-S20L32 PDM41257LA15D MT5C1005C CY7C199-35DMB SRAM Cross Reference EDI84256LPS25TB 41256
Text: National Semiconductor Part Numbering System N S 41024 L 20 E -SMD Grade Package Code Speed Grade Power Level Device Type /883 MIL-STD-883 Level B AC/DC tested at –55, +25 and +125°C with High Temp Burn-in -SMD DESC Standard Military Drawing AC/DC tested at –55, +25 and +125°C with High Temp Burn-in
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MIL-STD-883
PDM41257SA15D
Paradigm 41256
PDM41024S20L32
PDM41024-S20L32
PDM41257LA15D
MT5C1005C
CY7C199-35DMB
SRAM Cross Reference
EDI84256LPS25TB
41256
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EDI8M8512LP120C6B
Abstract: No abstract text available
Text: ^EDI EDI8M8512C Electronic Designs Inc. High Speed Four Megabit SRAM Module 512Kx8 Static RAM Features CMOS, Module The EDI8M8512C is a 4096K bit CMOS Static RAM 512Kx8 bit CMOS Static based on four 128Kx8 Static RAMs mounted on a multi Random Access Memory
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EDI8M8512C
512Kx8
150ns
150ns
EDI8M8512C
4096K
128Kx8
sLP70C6C
EDI8M8512LP85C6B
EDI8M8512LP120C6B
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DODI151
Abstract: EDI8M8512C EDI8M8512LP
Text: ^E D I EDI8 M8512 C Electronic Designs Inc. • High Speed Four Megabit SRAM Module 512Kx8 Static RAM CMOS, Module Features The EDI8M8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a multi layered ceramic substrate. Functional equivalence to the monolithic four mega
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EDI8M8512C
512Kx8
EDI8M8512C
4096K
128Kx8
the128Kx8
EDI8M8512LP)
EDI8M8512C85C6B
EDI8M8512C85C6I.
DODI151
EDI8M8512LP
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EDI8M8512C
Abstract: EDI8M8512C25C6B EDI8M8512C30C6B EDI8M8512C35C6B EDI8M8512C45C6B EDI8M8512LP TTL 154
Text: ^EDI EDI8M8512C Electronic Designs Inc. , High Speed Four Megabit SRAM Module 512Kx8 Static RAM CMOS Module Features The EDI8M8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a multi layered ceramic substrate. Functional equivalence to the monolithic four mega
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OCR Scan
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EDI8M8512C
512Kx8
EDI8M8512C
4096K
128Kx8
the128Kx8
EDI8M8512LP)
EDI8M8512C85C6B
EDI8M8512C85C6I.
EDI8M8512C25C6B
EDI8M8512C30C6B
EDI8M8512C35C6B
EDI8M8512C45C6B
EDI8M8512LP
TTL 154
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A17-A18j
Abstract: 2555N
Text: ^ EDI EDI8M8512C Electronic Designs Inc. High Speed Four Megabit SRAM Module 512Kx8 Static RAM CMOS, Module Features The EDI8M8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a multi layered ceramic substrate. Functional equivalence to the monolithic four mega
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OCR Scan
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PDF
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EDI8M8512C
512Kx8
4096K
128Kx8
the128Kx8
EDI8M8512LP)
EDI8M8512C85C6B
EDI8M8512C85C6I.
A17-A18j
2555N
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stm cl 120
Abstract: EDI8M8512C EDI8M8512LP
Text: ELECTRONIC DESIGNS SIE D INC • 3230114 0001B78 137 ■ E L D EDI8M8512C ^ EDI Btdronk: D«dgns Inc. ■ High Speed Four Megabit SRAM Module 512Kx8 Static RAM CMOS, Module PiiyMfliMiY Features The EDI8M8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a multi
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EDI8M8512C
512Kx8
EDI8M8512C
4096K
128Kx8
28Kx8
EDI8M8512LP)
ouI8M8512LP85P6C
EDI8M8512LP100P6C
EDI8M8512LP120P6C
stm cl 120
EDI8M8512LP
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Untitled
Abstract: No abstract text available
Text: EDI8M8512C ^ED I Electronic Dttipni inc. High Speed Four Megabit SRAM Module 512Kx8 Static RAM CMOS, Module Features The EDI8M8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a multi layered ceramic substrate. Functional equivalence to the monolithic four megabit
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EDI8M8512C
512Kx8
EDI8M8512C
4096K
128Kx8
28Kx8
150ns
ve8M8512C100P6C
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Untitled
Abstract: No abstract text available
Text: ^ED I EDI8M8512C B «ctonie D«rigns Inc. High Speed Four Megabit SRAM Module ^ E U iO iM Y 512Kx8 Static RAM CMOS, Module Features The EDI8M8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a multi layered ceramic substrate.
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OCR Scan
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PDF
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EDI8M8512C
512Kx8
150ns
150ns
EDI8M8512C
4096K
128Kx8
EDI8M8512C35C6B
EDI8M8512C45C6B
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