edo dram 50ns 72-pin simm
Abstract: No abstract text available
Text: UG216E32R4HSG T Data sheets can be downloaded at www.unigen.com 64M Bytes (16M x 32 bits) EDO MODE DRAM MODULE EDO Mode Unbuffered SIMM w/Voltage Converter based on 8 pcs 16M x 4 DRAM with LVTTL, 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View)
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UG216E32R4HSG
16Mbits
72-Pin
A0-A11
A0-A11
edo dram 50ns 72-pin simm
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Untitled
Abstract: No abstract text available
Text: UG216E32R4HST-6EK Data sheets can be downloaded at www.unigen.com 64M Bytes 16M x 32 bits EDO MODE DRAM MODULE EDO Mode Unbuffered SIMM w/Voltage Convertor based on 8 pcs 16M x 4 DRAM with LVTTL, 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View)
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UG216E32R4HST-6EK
UG216E32R4HST-6EK
16Mbits
72-Pin
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edo dram 60ns 72-pin simm
Abstract: edo dram 50ns 72-pin simm
Text: UG216E32R4HK S G(T) Data sheets can be downloaded at www.unigen.com 64M Bytes (16M x 32 bits) EDO MODE DRAM MODULE EDO Mode Unbuffered SIMM w/Voltage Converter based on 8 pcs 16M x 4 DRAM with LVTTL, 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View)
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UG216E32R4HK
16Mbits
72-Pin
A0-A11
A0-A11
edo dram 60ns 72-pin simm
edo dram 50ns 72-pin simm
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Untitled
Abstract: No abstract text available
Text: UG8M163224QRR-6 Data sheets can be downloaded at www.unigen.com EDO MODE DRAM MODULE 64M Bytes 16M x 32 bits EDO Mode Unbuffered SIMM w/Voltage Converter based on 8 pcs 16M x 4 DRAM with LVTTL, 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 72-Pin SIMM
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UG8M163224QRR-6
750mil)
UG8M163224QRR-6
16Mbits
usQ33
A0-A11
A0-A11
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MCM318165CV/D SEMICONDUCTOR TECHNICAL DATA 1M x 16 Advance Information 16M CMOS Wide DRAM Family EDO, 1M x 16, 1K MCM318165CV EDO 1024 Cycle Refresh The family of 16M Dynamic RAMs is fabricated using 0.40µ CMOS high–speed
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MCM318165CV/D
MCM318165CV
MCM318165CV)
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MCM518165BT60
Abstract: MCM518165BJ60 motorola dram MCM518165B MCM518165B-70 MCM516165BJ60
Text: MOTOROLA Order this document by MCM516165B/D SEMICONDUCTOR TECHNICAL DATA 1M x 16 Advance Information MCM516165B 16M CMOS Wide DRAM Family EDO 4096 Cycle Refresh EDO, 1M x 16, 1K, and 4K Refresh The family of 16M Dynamic RAMs is fabricated using 0.50µ CMOS high–speed
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MCM516165B/D
MCM516165B
MCM516165B)
MCM518165B)
MCM516165B
MCM518165B
MCM516165B/D*
MCM518165BT60
MCM518165BJ60
motorola dram
MCM518165B
MCM518165B-70
MCM516165BJ60
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PDF
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motorola dram
Abstract: No abstract text available
Text: MOTOROLA Order this document by MCM516165BV/D SEMICONDUCTOR TECHNICAL DATA 1M x 16 Advance Information MCM516165BV 16M CMOS Wide DRAM Family EDO 4096 Cycle Refresh EDO, 1M x 16, 1K, and 4K Refresh The family of 16M Dynamic RAMs is fabricated using 0.50µ CMOS high–speed
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MCM516165BV/D
MCM516165BV
MCM516165BV)
MCM518165BV)
MCM516165BV
MCM518165BV
MCM516165BV/D*
motorola dram
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IBM0164405B16M
Abstract: IBM0164405BJ3C-50 IBM0164405BJ3C-60 IBM0164405P16M TSOP-32 SA14-4237-02
Text: IBM0164405B16M x 413/11, 3.3V, EDO. IBM0164405P16M x 413/11, 3.3V, LP, SR, EDO. IBM0164405B IBM0164405P 16M x 4 13/11 EDO DRAM ADVANCED Features • 16,777,216 word by 4 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply • Performance:
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IBM0164405B16M
IBM0164405P16M
IBM0164405B
IBM0164405P
104ns
IBM0164405BJ3C-50
IBM0164405BJ3C-60
TSOP-32
SA14-4237-02
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IBM0165405B16M
Abstract: IBM0165405BJ3C-50 IBM0165405BJ3C-60 IBM0165405P16M TSOP-32
Text: IBM0165405B16M x 412/12, 3.3V, EDO. IBM0165405P16M x 412/12, 3.3V, LP, SR, EDO. IBM0165405B IBM0165405P 16M x 4 12/12 EDO DRAM ADVANCED Features • 16,777,216 word by 4 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply • Performance:
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IBM0165405B16M
IBM0165405P16M
IBM0165405B
IBM0165405P
104ns
SA14-4238-02
IBM0165405BJ3C-50
IBM0165405BJ3C-60
TSOP-32
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S609
Abstract: sfhg MCM218165B 891lns
Text: Order this document MOTOROLA by MCM218165B/O SEMICONDUCTOR TECHNICAL DATA IMx16 Advance Information 16M CMOS Wide DRAM Family EDO, 1M x 16, and 1K Refresh MCM218165B EDO 1024 Cycle Refr~~:,. ,;,.’.,> , -.c~,.,. The family of 16M Dynamic RAMs is fabricated using 0.4w CMOS
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MCM218165B/O
IMx16
MCM218165B
MCM218165B
244-S609
l-800-774-1848
511ing
MCM218165B/D
S609
sfhg
891lns
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SL32D4C16M4E-A60V
Abstract: 16MX32
Text: SL32D4C16M4E-AxxV 16M X 32 Bits DRAM SO-DIMM with Extended Data Out EDO FEATURES GENERAL DESCRIPTION • The SiliconTech SL32D4C16M4E-AxxV is a 16M x 32 bits Dynamic RAM memory module. The SL32D4C16M4E-AxxV consists of eight CMOS 16M x 4 bits DRAMs in 32-pin 400-mil
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SL32D4C16M4E-AxxV
SL32D4C16M4E-AxxV
32-pin
400-mil
72-pin
104ns
72-pin
A0-A11
SL32D4C16M4E-A60V
16MX32
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edo dram 50ns 72-pin simm
Abstract: UG232W3264HSG
Text: UG232W3264HSG T Data sheets can be downloaded at www.unigen.com 128M Bytes (32M x 32 bits) EDO MODE DRAM MODULE EDO Mode Unbuffered SIMM based on 16 pcs 16M x 4 DRAM with LVTTL, 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 72-Pin SIMM The UG232W3264HSG(T) is a 32Mbits x 32 EDO
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UG232W3264HSG
32Mbits
72-Pin
104ns
A0-A11
A0-A11
edo dram 50ns 72-pin simm
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Untitled
Abstract: No abstract text available
Text: UG232W3264HSG-6 Data sheets can be downloaded at www.unigen.com 128M Bytes 32M x 32 bits EDO MODE DRAM MODULE EDO Mode Unbuffered SIMM based on 16 pcs 16M x 4 DRAM with LVTTL, 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 72-Pin SIMM The UG232W3264HSG-6 is a 32Mbits x 32 EDO
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UG232W3264HSG-6
72-Pin
UG232W3264HSG-6
32Mbits
A0-A11
A0-A11
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Untitled
Abstract: No abstract text available
Text: 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module HYM64V1605GU-50/-60 HYM64V1645GU-50/-60 HYM72V1605GU-50/-60 HYM72V1645GU-50/-60 168pin unbuffered DIMM Module with serial presence detect Advanced Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte
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64-Bit
72-Bit
HYM64V1605GU-50/-60
HYM64V1645GU-50/-60
HYM72V1605GU-50/-60
HYM72V1645GU-50/-60
168pin
GU-60
V1605/45GU-50/-60
L-DIM-168-14
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Untitled
Abstract: No abstract text available
Text: UG532W7288JSR 32M x 72 bits EDO MODE DRAM MODULE EDO Mode buffered DIMM With ECC based on 18 pcs 16M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT Front View 168-Pin DIMM FEATURES Single 3.3V ± 10% power supply Hyper Page Mode (EDO) operation CAS-before-RAS Refresh capability
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UG532W7288JSR
1250mil)
168-Pin
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MCM218165BVJ60
Abstract: 4036B
Text: MOTOROLA Order this document by MCM218165BV/D SEMICONDUCTOR TECHNICAL DATA 1M x 16 Advance Information 16M CMOS Wide DRAM Family EDO, 1M x 16, and 1K Refresh MCM218165BV EDO 1024 Cycle Refresh The family of 16M Dynamic RAMs is fabricated using 0.4µ CMOS high–speed silicon–gate process technology. It includes devices organized as
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MCM218165BV/D
MCM218165BV
MCM218165BV
MCM218165BVJ60
4036B
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4253-01
Abstract: IBM0165405B16M IBM0165405BJ3D-50 IBM0165405BJ3D-60 IBM0165405P16M TSOP-32
Text: Discontinued 12/98 - last order; 3/99 last ship IBM0165405B16M x 412/12, 3.3V, EDO. IBM0165405P16M x 412/12, 3.3V, LP, SR, EDO. IBM0165405B IBM0165405P 16M x 4 12/12 EDO DRAM Features • 16,777,216 word by 4 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply
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IBM0165405B16M
IBM0165405P16M
IBM0165405B
IBM0165405P
104ns
4253-01
IBM0165405BJ3D-50
IBM0165405BJ3D-60
TSOP-32
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IBM0165405BJ5B-50
Abstract: IBM0165405BJ5B-60 IBM0165405P16M IBM0165405B16M
Text: IBM0165405B16M x 412/12, 3.3V, EDO. IBM0165405P16M x 412/12, 3.3V, LP, SR, EDO. IBM0165405B IBM0165405P 16M x 4 12/12 EDO DRAM Features • 16,777,216 word by 4 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply • Performance: • Extended Data Out Hyper Page Mode
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IBM0165405B16M
IBM0165405P16M
IBM0165405B
IBM0165405P
104ns
IBM0165405BJ5B-50
IBM0165405BJ5B-60
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Untitled
Abstract: No abstract text available
Text: SIEMENS 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module HYM 64V1605GU-50/-60/-70 HYM 64V1645GU-50/-60/-70 HYM 72V1605GU-50/-60/-70 HYM 72V1645GU-50/-60/-70 168pin unbuffered DIMM Module with serial presence detect Preliminary Information
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64-Bit
72-Bit
64V1605GU-50/-60/-70
64V1645GU-50/-60/-70
72V1605GU-50/-60/-70
72V1645GU-50/-60/-70
168pin
E3Sb05
fl23SbOS
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24C02 wp st
Abstract: No abstract text available
Text: SIEMENS 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module HYM HYM HYM HYM 168pin unbuffered DIMM Module with serial presence detect 64V1605GU-50/-60/-70 64V1645GU-50/-60/-70 72V1605GU-50/-60/-70 72V1645GU-50/-60/-70 Preliminary Information
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OCR Scan
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64-Bit
72-Bit
168pin
64V1605GU-50/-60/-70
64V1645GU-50/-60/-70
72V1605GU-50/-60/-70
72V1645GU-50/-60/-70
L-DIM-168-14
V1605/45GU-50/-60/-70
24C02 wp st
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module HYM64V1605GU-50/-60 HYM64V1645GU-50/-60 HYM72V1605GU-50/-60 HYM72V1645GU-50/-60 168pin unbuffered DIMM Module with serial presence detect • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-Line Memory Module
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OCR Scan
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64-Bit
72-Bit
HYM64V1605GU-50/-60
HYM64V1645GU-50/-60
HYM72V1605GU-50/-60
HYM72V1645GU-50/-60
168pin
V1605/45G
U-50/-60
L-DIM-168-14
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PDF
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Untitled
Abstract: No abstract text available
Text: HYM64V1605GU-50/-60 HYM64V1645GU-50/-60 HYM72V1605GU-50/-60 HYM72V1645GU-50/-60 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 168pin unbuffered DIMM Module with serial presence detect • 168 Pin JE D E C Standard, Unbuffered 8 Byte Dual In-Line Memory Module
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64-Bit
72-Bit
168pin
HYM64V1605GU-50/-60
HYM64V1645GU-50/-60
HYM72V1605GU-50/-60
HYM72V1645GU-50/-60
V1605/45GU-50/-60
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555E
Abstract: No abstract text available
Text: Order this document by MCM218165B/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M x 16 Advance Information 16M CMOS Wide DRAM Family EDO, 1M x 16, and 1K Refresh MCM218165B EDO 1024 Cycle Refresh The family of 16M Dynamic RAMs is fabricated using 0.4|i CMOS high-speed silicon-gate process technology. It includes devices organized as
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MCM218165B/D
MCM218165B
555E
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cm218
Abstract: MCM21
Text: Order this document by MCM218165BV/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M X 16 Advance Information 16M CMOS Wide DRAM Family EDO, 1M x 16, and 1K Refresh MCM218165BV EDO 1024 Cycle Refresh The family of 16M Dynamic RAMs is fabricated using 0.4^ CMOS high-speed silicon-gate process technology. It includes devices organized as
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MCM218165BV/D
CM218165BV
cm218
MCM21
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