CL-808-015W-430
Abstract: 10w laser diode 808 nm 1000 mw 6080WA
Text: Product Specifications Features • Up to 15W CW output power. • High Quality, Reliability, & Performance Applications • Solid State Pumping • Graphics • Medical/Dental • Industrial • Defense 808nm Multi-Mode Laser Diodes 400µm emitter 8W-15W
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808nm
W-15W)
ss-808-pppp-4xx
CL-808-015W-430
10w laser diode
808 nm 1000 mw
6080WA
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Untitled
Abstract: No abstract text available
Text: PCO-7110 FIXED PULSE WIDTH LASER DIODE DRIVER MODULE • • • • • The PCO-7110 is a compact, economical OEM pulsed laser diode driver module.It is designed to provide extremely fast, high current pulses to drive laser diodes in range finder, LIDAR,atmospheric
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PCO-7110
50KHz.
50kHz
11kHz
100nS
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Diode ST48
Abstract: laser diode driver ic tda12 ADN2840 ADN2850 OC48 STM-16
Text: a DUAL LOOP 2.5Gbps LASER DIODE DRIVER ADN2840 Preliminary Technical Data FEATURES 2.5 Gbps Operation Typical rise/fall time 80 ps Bias Current range 2 to 100 mA Modulation Current range 5 to 80 mA Monitor Photo Diode current 50 to 1300uA Closed loop control of Power and Extinction Ratio
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ADN2840
1300uA
ADN2840
Diode ST48
laser diode driver ic
tda12
ADN2850
OC48
STM-16
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Untitled
Abstract: No abstract text available
Text: a DUAL LOOP 2.5Gbps LASER DIODE DRIVER ADN2840 Preliminary Technical Data FEATURES 2.5 Gbps Operation Typical rise/fall-time 80 ps Bias Current range 2 to 100 mA Modulation Current range 5 to 80 mA Monitor Photo Diode current 50 to 1300mA Closed loop control of Power and Extinction Ratio
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ADN2840
1300mA
ADN2840
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Untitled
Abstract: No abstract text available
Text: E G & G/CANADA/OPTOELEK Il 47E D • 3D3DblO ■_< — GODDPòfl 2 ■ CANA 1550nm High Power Pulsed Laser C Ij K IJ OPTOELECTRONICS C86091E T-y -cs ■ ■ ■ ■ H T he C 86091E is a high pow er single elem ent pulsed laser diode. W avelength is centered at 1550 nm to take advantage
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1550nm
C86091E
86091E
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EG*G Optoelectronics
Abstract: C30642 eg and g laser diode C30641 indium gallium arsenide phosphide Indium Gallium Arsenide Phosphide lasers C30618 C30619 C86091E
Text: Il E G & G/CANADA/OPTOELEK •_ 47E D ■ □□□□Pflfl 2 ■ CANA 3030bl0 1550nm High Power Pulsed Laser I-» OPTOELECTRONICS C86091E -r-H h O S ■ ■ ■ ■ ■ The C 86091E is a high pow er single elem ent pulsed laser diode. W avelength is centered at 1550 nm to take advantage
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3030bl0
1550nm
C86091E
C86091E
ED-0053/06/91
EG*G Optoelectronics
C30642
eg and g laser diode
C30641
indium gallium arsenide phosphide
Indium Gallium Arsenide Phosphide lasers
C30618
C30619
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RLD78PA
Abstract: RLD-78PA 78P30 RLD-78MA RLD-78N30 laser diodes for optical source RLD-78P30
Text: AIGaAs double-hetero visible laser diodes RLD-78M30 RLD-78P30 RLD-78N30 These were the world’s first mass-produced laser diodes that were manufactured by molecular beam epitaxy and introduced with the RLD-78MA and RLD-78PA laser diodes. These diodes were especially developed for products
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RLD-78M30
RLD-78P30
RLD-78N30
RLD-78MA
RLD-78PA
RLD-78M
Ip20mW~
RLD78PA
78P30
RLD-78N30
laser diodes for optical source
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STC25
Abstract: No abstract text available
Text: bEE » • b427S2S ÜD37Sbb fi7G BNECE Z' N E C ELECTRONICS INC / LASER DIODE N D L 5 6 5 0 1 550 nm OPTICAL FIBER COMM UNICATIONS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE DESCRIPTION N D L 5 6 5 0 D is a 1 550 nm D F B {Distributed Feed-back laser dio de e specially designed fo r long distance high cap a city transm is
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bME7525
0D375bfi
NDL5650
STC25
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"WORM"
Abstract: No abstract text available
Text: P H IL IP S 41E IN T E R N A T IO N A L i> m 711002b oosm b? IPHIN T PI W APR 0 3 1990 F - t t - V z . 3hlllps Components Data sheet status Product specification code 9397 253 40011 date of Issue April 1990 CQL71A Medium power collimator pen FEATURES OPERATIONAL HAZARD - SEMICONDUCTOR LASER DIODE
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711002b
CQL71A
"WORM"
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ML961B8S
Abstract: S-25 1480 nm diode laser H Beam photodiode 1490 nm
Text: MITSUBISHI LASER DIODES ML9XX8 SERIES InG aA sP-M Q W HIGH POWER LASER DIODES TYPE NAME FEATURES DESCRIPTION M L9X X8 serie s are InG aA sP high po w e r laser dio d e s w hich p ro vid e s a sta b le , single em is s io n w a v e le n g th of tra n s v e rs e
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1480nm
150mW.
150mW)
l480nm
ML961B8S
100mW
100rr
ML961B8S
S-25
1480 nm diode laser
H Beam
photodiode 1490 nm
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2 Wavelength Laser Diode
Abstract: OL317N OL327N cd laser unit highpower laser
Text: O K I electronic components QL307W, OL317N, OL327N 1.3 urn High-Power Laser Diode GENERAL DESCRIPTION The OL307N, OL317N and OL327N are 1.3 |im , InG aAsP/InP laser diodes that can be light sources for fiber-optic communication system s and optical instruments.
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QL307W,
OL317N,
OL327N
OL317N
OL327N
QL307N,
OL317N
2 Wavelength Laser Diode
cd laser unit
highpower laser
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Untitled
Abstract: No abstract text available
Text: Panasonic Semiconductor Laser LNC801PS High Power Output Semiconductor Laser • Outline p4.3±0.1 03.55+0.1 The LNC801PS is a GaAlAs laser diode w hich provides stable, continuous, single m ode oscillation o f near infrared light at room temperature. This product can be used in a wide range of light source
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LNC801PS
LNC801PS
LNC801
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Untitled
Abstract: No abstract text available
Text: SANKEN ELECTRIC U S A -i HE » II 7EHD741 DDQG137 7 I Ultra Fast Recovery Diodes B V rm:70~1000V B lo :0.4~5.0A SFPL/AG/AL/EG/EL/RG/RL Characteristics V rsm V lo (A ) twith Fin Rating Type S F P L -5 2 200 200 0.9 S F P L -6 2 200 200 1.0. 1.0 AG 01V 70
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HD741
DDQG137
AL01Z
EG01Y
EG01Z
EG01C
CTB-33
CTB-34.
MI-10/15
SFPB-64
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LASER DIODES ML6XX16 SERIES AIGaAs LASER DIODES TYPE NAME DISCRIPTION FEATURES M L6X X 16 serie s are high p o w e r A IG aA s s e m ico ndu ctor laser • O u t p u t 30 m W CW 4 0 m W (pulse) d io d e s • S h o r t astig m atic distance w h ic h
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ML6XX16
785nm
L6XX16
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B 8F laser diodes
Abstract: No abstract text available
Text: MITSUBISHI LASER DIODES ML7XX8 SERIES InGaAsP— MQW— FP LASER DIODES ML701 B8R,ML725B8F,ML725C8F ML720J8S,ML720K8S TYPE NAME DESCRIPTION FEATURES M L7X X8 serie s are InG aA sP laser diod es w hich provides a s ta b le , s in g le w avele ngth tra n s v e rs e
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ML701
ML725B8F
ML725C8F
ML720J8S
ML720K8S
1310nm
ML720J8S
ML725B8F
B 8F laser diodes
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2SC 1570
Abstract: EAM LD
Text: HL1521FG Laser Diode Description A H L 1 5 2 1 F G is a 1.55 /¿m In G a A sP laser diode with b u ried h e te ro stru c tu re . It is su itable as a light so u rce in h igh-bit-rate, lo ng-distance fiberoptic co m m u n icatio n s and v ario u s o th e r types o f optical eq u ip m en t.
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HL1521FG
2SC 1570
EAM LD
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LF400
Abstract: R-1525 OL561N-25 OL564N-25
Text: O K I electronic components OL561N-25, OL564N-25 1.55 |im High-Power Laser-Diode DIP Module GENERAL DESCRIPTION The OL561N-25 and OL564N-25 are 1.55 Jim, extremely high power laser-diode DIP modules with single-mode fiber pigtails. The Multi-Quantum Well MQW structure laser diodes achieve a single
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OL561N-25,
OL564N-25
OL561N-25
OL564N-25
14-pin
OL561N-25)
b7E4240S
OL561N-25
2424D
LF400
R-1525
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Untitled
Abstract: No abstract text available
Text: ENGINEERING SPECIFICATIONS * T O T T O R I 'SAN YO E L E C T R I C C O . . LTD. LED DIVISION 5- 31 8 , T a c h i k a w a - c y o Tot tor 1 -sii i . 6 8 0 Date: J u n e 17, Japan 1993 LASER T y p e : DIODE S D L - L S 3 0 * v e r i f i e d a n d d i s t r i b u t e d by L E D d i v i s i o n ,
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GG137bb
GG137b7
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Untitled
Abstract: No abstract text available
Text: SLD303V SONY, 500mW High Power Laser Diode Description Package Outline U n it: mm SLD303V are gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power o utp ut • Small operating current
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SLD303V
500mW
SLD303V
500mW
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Untitled
Abstract: No abstract text available
Text: ADE-208-188 Z HSM125WK Silicon Schottky Barrier Diode for Battery Switch Preliminary Rev.O Oct. 1993 HITACHI Features Pin Arrangement • The H S M 125W K has tw o d ifferen t (V F- IF) chips, and can change the main battery to the backup battery automatically.
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ADE-208-188
HSM125WK
HSM125W
200pF,
HSM125WK
SC-59A
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mitsubishi cab
Abstract: No abstract text available
Text: MITSUBISHI LASER DIODES ML7XX4 SERIES InGaAsP —MQW—DFB LASER DIODES TYPE NAME FEATURES DESCRIPTION M L7X X4 series are M Q W * — D F B * laser diod es em itting • E x c e lle n t low disto rtion cha racte ristic C S O typica l-60d B c/C T B typica l-65d B c
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l-60d
l-65d
78-channel
1310nm
L7924
mitsubishi cab
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laser diode philips
Abstract: CQL61A sot148d Philips diode OPTICAL LASER PHILIPS
Text: Philips Components cqlsia _ A_ MEDIUM POWER DOUBLE HETEROSTRUCTURE AIGaAs LASER The CQL61A is a MOVPE grown gain guided double heterostructure laser diode. The laser delivers an o utput power o f 20 mW CW at 25 °C and a wavelength o f about 820 nm.
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CQL61A
OT148D
6534AE
laser diode philips
sot148d
Philips diode
OPTICAL LASER PHILIPS
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philips twin eye
Abstract: CQL20 t241 diode ftz869 diode code ae eg and g laser diode
Text: Philips Components CQL20 AIGaAs DOUBLE HETEROSTRUCTURE LASER-DIODE The C Q L 2 0 is designed for reading applications such as video/audio disc applications, optical memories, security systems etc. The index guided Buried Twin Ridge Substrate B T R S laser is constructed on a p-type gallium arsenide
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CQL20
CQL20
philips twin eye
t241 diode
ftz869
diode code ae
eg and g laser diode
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TGS 830
Abstract: told laser diode toshiba TOLD151 Diode dx 2A Toshiba Laser Diodes
Text: TO SHIBA -CLASER/FBR O P T IO 01 DE I T C H T E S a □□It.lD? E § ^'^7-05* TOSHIBA LASER DIODES FOR OPTICAL INFORMATION PROCESSINGS Standard type Standard type can be used in wide range of application. Three package types are the 9mm-diameter round flange,
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