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    EGN21b180

    Abstract: EGN21B EGN21B180IV
    Text: EGN21B180IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 16dB typ. at Pout=45dBm(Avg.) ・High Efficiency: 32%(typ.) at Pout=45dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION


    Original     		EGN21B180IV 45dBm 2200MHz EGN21B180IV EGN21b180 EGN21B PDF