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    EGN21C070MK

    Abstract: JESD22-A114
    Text: EGN21C070MK GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 49.5dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 17.0dB(typ.) @ f=2.14GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		EGN21C070MK 14GHz JESD22-A114) JEIA/ESD22-A115) EGN21C070MK JESD22-A114 PDF

    Untitled

    Abstract: No abstract text available
    Text: EGN21C070MK High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 49.5dBm typ. @ Psat High Efficiency: 70%(typ.) @ Psat Power Gain : 17.0dB(typ.) @ f=2.14GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		EGN21C070MK 14GHz 25deg JESD22-A114) JEIA/ESD22-A115) PDF

    Untitled

    Abstract: No abstract text available
    Text: EGN21C070MK GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 49.5dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 17.0dB(typ.) @ f=2.14GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		EGN21C070MK 14GHz JESD22-A114) JEIA/ESD22-A115) PDF