EGN21C070MK
Abstract: JESD22-A114
Text: EGN21C070MK GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 49.5dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 17.0dB(typ.) @ f=2.14GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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Original
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EGN21C070MK
14GHz
JESD22-A114)
JEIA/ESD22-A115)
EGN21C070MK
JESD22-A114
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PDF
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Untitled
Abstract: No abstract text available
Text: EGN21C070MK High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 49.5dBm typ. @ Psat High Efficiency: 70%(typ.) @ Psat Power Gain : 17.0dB(typ.) @ f=2.14GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater
|
Original
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EGN21C070MK
14GHz
25deg
JESD22-A114)
JEIA/ESD22-A115)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: EGN21C070MK GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 49.5dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 17.0dB(typ.) @ f=2.14GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
|
Original
|
EGN21C070MK
14GHz
JESD22-A114)
JEIA/ESD22-A115)
|
PDF
|