Untitled
Abstract: No abstract text available
Text: KODENSHI CORP 25E D • 52 42L0A 0000501 2 r-< n -n -K G a A s IN F R A R E D EM ITTIN G D IO D E S E L 7 ''!’ - 2 3 t —KT'To MB, DIMENSIONS F K $ n fc # tt* 6 a A s ife ^ fS jt 4 'H T * * A < S * T r . (Unit; mm) The EL-23F, a high-power GaAs IRED mounted in a clear
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42L0A
EL-23F,
ss45toa
EL-23P*
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Untitled
Abstract: No abstract text available
Text: I 2SE D KODENSHI CO'RP - tz > y — e • S24ab0fl DOOOaTl 7 ■ T M Ml z l SENSOR UNITS EL-23F-HLD i,M M m * £ /-juu ? * - ICJ± A t S c i: ir «t -o T ft U DIMENSIONS (Unit: mm » « * » « : • t y S f t lC U f c G a A s iS ^ S S jt y 'l'* y *b -f> fi
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S24ab0fl
EL-23F-HLD
ST-23F-HLD
PT-23FHLD,
t-23F-HLD*
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EL-23F-HLD
Abstract: EL-23F 25X1 PT-23F-HLD ST-23F-HLD EL23F-HLD PT-23F
Text: p h o t o in t e r r u p t e r s SENSOR UNITS_ ST-23FH LD S T -2 3 F -H L D Ii, [SH4«f&< U !S S 8 iJ:tJ§ S C l,t7 i hf t . f£fts 3fc$ft|S|<*-t!:3Z.i:C<i:t.K 7 i Z .1 C J: o T iB DIMENSIONS U n it:m m t The S T -2 3 F -H L D is an NPN silicon phototransistor,
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ST-23FHLD
ST-23F-HLDIi,
ST-23F-HLD
EL-23F-HLD,
EL-23F-HLD
EL-23F
25X1
PT-23F-HLD
EL23F-HLD
PT-23F
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Untitled
Abstract: No abstract text available
Text: KODENSHI CORP * 2SE D SEMSbDa 0000287 5 • A SENSOR UNITS ST-23F-H L D j\iiff2i!iT-£*^7'-i:j£A T £ C 1 C J: -oT}g 0 M N - * DIMENSIONS (Unit: mm) U y # *(= L t z 7 * b m^X'T, « j t , 7 * 1 '- < > 7 7 7 7 2: L T f f l t 5 : i : * ! T - # S t . The ST-23F-HLD is an NPN silicon phototransistor, pressed
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ST-23F-H
ST-23F-HLD
EL-23FHLD,
2856Kfl
ss42baa
ST-23F-HLD-'
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Untitled
Abstract: No abstract text available
Text: KODENSHI CORP fZ } 1Z > 25E D • 5242^03 000023^ T ■ T"4-/'6S 1? — SENSOR UNITS $Hg-tSs DIMENSIONS Unit: mm P T - 2 3 F - H L D 1 * £ * Jl' 9 ~ l-J£ A T 6 - t (C J: -o X iU U » R * » « rJ:U # * C L fc 7 * h ^ - U > h > ftfF F C T . 3B3t» * 3 t 4 r » r t lS - & S - t ( = J : ‘K 7 * F ' f > 7
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PT-23F-HLD
EL-23FHLD,
PT-23F-HLDe<
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Infrared Emitting Diodes
Abstract: No abstract text available
Text: 25E D KODENSHI CORP 5242bOfi QQQ0D23 4 • -p-lf-f- EMITTERS B T-11-13 APPLICATION: Remote Control/Optical Switch/Optoisolator/ Chopper/Pattern Recognition INFRARED EM ITTING DIODES GaAs) (Ta=25°C) Absolute maximum Ratings Type No. lF(mA) Vr(V) P(mW) Topr.fC)
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5242bOfi
QQQ0D23
T-11-13
EL-23F
Infrared Emitting Diodes
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EL-23F
Abstract: EL1L2 EL23F EL-1L2
Text: g ss Infrared E m itting D iodes E M IT T E R S INFRARED EMITTING DIODES GaAs (Ta=25°C) Type No. ae (deg.) Typ. 100 940 ± 10 1.7 100 940 ;36 100 1.7 100 940 ± 10 15.4 100 1.7 100 940 + 30 2.7 50 1.5 50 940 ±32 2.0 60 1.6 60 940 ±30 0.7 50 1.6 50 940
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EL-23F
EL-302
EL-23F
EL1L2
EL23F
EL-1L2
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