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    ELITE SEMICONDUCTOR MEMORY TECHNOLOGY NAND Search Results

    ELITE SEMICONDUCTOR MEMORY TECHNOLOGY NAND Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ELITE SEMICONDUCTOR MEMORY TECHNOLOGY NAND Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ESM T Preliminary F59L4G81A Operation Temperature Condition -40 C~85 C Flash 4 Gbit (512M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase


    Original     		PDF F59L4G81A 250us

    F59L4G81A

    Abstract: F59L two-plane program nand "4bit correction"
    Text: ESMT Preliminary F59L4G81A Operation Temperature Condition -40°C~85°C Flash 4 Gbit (512M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase


    Original     		PDF F59L4G81A 4bit/512Byte F59L4G81A F59L two-plane program nand "4bit correction"

    Esmt

    Abstract: F59D2G81A
    Text: ESMT Preliminary F59D2G81A Operation Temperature Condition -40°C~85°C Flash 2 Gbit (256M x 8) 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase


    Original     		PDF F59D2G81A 4bit/512Byte Esmt F59D2G81A

    NAND Flash

    Abstract: No abstract text available
    Text: ESMT F59D2G81A / F59D2G161A Flash 2 Gbit 256M x 8 / 128M x 16 1.8V NAND Flash Memory FEATURES       Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization x8: - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (128M + 4M) x 16bit


    Original     		PDF F59D2G81A F59D2G161A 16bit NAND Flash

    Untitled

    Abstract: No abstract text available
    Text: ESMT F59L512M81A Preliminary Flash 512Mbit (64M x 8) 3.3V NAND Flash Memory FEATURES z z z z z z z z z Voltage Supply: 2.7V ~ 3.6V Organization - Memory Cell Array: (64M + 2M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte


    Original     		PDF F59L512M81A 512Mbit 250us it/512 100in

    F59L2G81A

    Abstract: F59L2G81A, F59L2G81 two-plane program nand bsc 60h
    Text: ESMT Preliminary F59L2G81A Operation Temperature Condition -40°C~85°C Flash 2 Gbit (256M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase


    Original     		PDF F59L2G81A 4bit/512Byte F59L2G81A F59L2G81A, F59L2G81 two-plane program nand bsc 60h

    Untitled

    Abstract: No abstract text available
    Text: ESM T Preliminary F59L2G81A Operation Temperature Condition -40 C~85 C Flash 2 Gbit (256M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase


    Original     		PDF F59L2G81A 250us

    Untitled

    Abstract: No abstract text available
    Text: ESM T Preliminary F59D4G81A Operation Temperature Condition -40 C~85 C Flash 4 Gbit (512M x 8) 1.8V NAND Flash Memory FEATURES         Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit


    Original     		PDF F59D4G81A 250us

    NAND Flash

    Abstract: F59L2G81A
    Text: ESMT F59L2G81A Flash 2 Gbit 256M x 8 3.3V NAND Flash Memory FEATURES         Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) byte


    Original     		PDF F59L2G81A 350us NAND Flash F59L2G81A

    NAND Flash

    Abstract: No abstract text available
    Text: ESMT F59D4G81A / F59D4G161A Flash 4 Gbit 512M x 8 / 256M x 16 1.8V NAND Flash Memory FEATURES       Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization x8: - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (256M + 4M) x 16bit


    Original     		PDF F59D4G81A F59D4G161A 16bit NAND Flash

    Untitled

    Abstract: No abstract text available
    Text: ESM T Preliminary F59D2G81A Operation Temperature Condition -40 C~85 C Flash 2 Gbit (256M x 8) 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase


    Original     		PDF F59D2G81A 250us

    Untitled

    Abstract: No abstract text available
    Text: ESMT F59D2G81A Operation Temperature Condition -40°C~85°C Flash 2 Gbit 256M x 8 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase


    Original     		PDF F59D2G81A 250us

    Untitled

    Abstract: No abstract text available
    Text: ESMT F50L1G41A 2Y Flash 3.3V 1 Gbit SPI-NAND Flash Memory PRODUCT LIST Parameters Values VCC Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up Ready Time Max Reset Busy Time Note: 1. x2 PROGRAM operation is not defined. 3.3V


    Original     		PDF F50L1G41A 104MHz 104MT/s 100us

    two-plane program nand

    Abstract: No abstract text available
    Text: ESMT Preliminary Flash F59L4G81A 4 Gbit (512M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes


    Original     		PDF F59L4G81A 250us 4bit/512Byte two-plane program nand

    F59D4G81A

    Abstract: No abstract text available
    Text: ESMT Preliminary F59D4G81A Operation Temperature Condition -40°C~85°C Flash 4 Gbit (512M x 8) 1.8V NAND Flash Memory FEATURES         Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit


    Original     		PDF F59D4G81A 4bit/512Byte F59D4G81A

    Untitled

    Abstract: No abstract text available
    Text: ESMT F59D4G81A Operation Temperature Condition -40°C~85°C Flash 4 Gbit 512M x 8 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase


    Original     		PDF F59D4G81A 250us

    F59D1G81A

    Abstract: 1G NAND flash Elite Semiconductor Memory Technology nand
    Text: ESMT F59D1G81A Flash 1 Gbit 128M x 8 1.8V NAND Flash Memory FEATURES z z z z z z z Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte


    Original     		PDF F59D1G81A 1bit/528Byte F59D1G81A 1G NAND flash Elite Semiconductor Memory Technology nand

    Untitled

    Abstract: No abstract text available
    Text: ESMT F59L1G81MA 2Y Flash 1 Gbit (128M x 8) 3.3V NAND Flash Memory FEATURES z z z z z z z z Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte


    Original     		PDF F59L1G81MA 300us 4bit/512Byte,

    Untitled

    Abstract: No abstract text available
    Text: ESMT F50L512M41A Flash 3.3V 512 Mbit SPI-NAND Flash Memory PRODUCT LIST Parameters Values VCC VCCQ1 Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up Ready Time Max Reset Busy Time Note: 1. VCCQ should be the same as VCC. 2. x2 PROGRAM operation is not defined.


    Original     		PDF F50L512M41A 104MHz 104MT/s

    Untitled

    Abstract: No abstract text available
    Text: ESMT F59D512M81A Preliminary Flash 512Mbit (64M x 8) 1.8V NAND Flash Memory FEATURES z z z z z z z z z Voltage Supply: 1.7V ~ 1.95V Organization - Memory Cell Array: (64M + 2M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte


    Original     		PDF F59D512M81A 512Mbit 250us it/512

    Untitled

    Abstract: No abstract text available
    Text: ESM T F59L1G81A Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes - Block Erase: (128K + 4K) bytes


    Original     		PDF F59L1G81A 200us it/528

    Untitled

    Abstract: No abstract text available
    Text: ESMT F59L512M81A Flash 512Mbit 64M x 8 3.3V NAND Flash Memory FEATURES          Voltage Supply: 2.7V ~ 3.6V Organization - Memory Cell Array: (64M + 2M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte


    Original     		PDF F59L512M81A 512Mbit 250us

    1G NAND flash

    Abstract: F59L1G81A F59L
    Text: ESMT F59L1G81A Operation Temperature Condition -40°C~85°C Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES z z z z z z z z z z z z z z Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit


    Original     		PDF F59L1G81A 200us 1G NAND flash F59L1G81A F59L

    F59L1G81A

    Abstract: No abstract text available
    Text: ESMT F59L1G81A Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES z z z z z z z z z z z z z z Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes


    Original     		PDF F59L1G81A 200us F59L1G81A