two-plane program nand
Abstract: No abstract text available
Text: ESMT Preliminary Flash F59L4G81A 4 Gbit (512M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes
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F59L4G81A
250us
4bit/512Byte
two-plane program nand
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NAND Flash
Abstract: F59L4G81A
Text: ESMT F59L4G81A Flash 4 Gbit 512M x 8 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes
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PDF
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F59L4G81A
350us
NAND Flash
F59L4G81A
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Untitled
Abstract: No abstract text available
Text: ESM T Preliminary F59L4G81A Operation Temperature Condition -40 C~85 C Flash 4 Gbit (512M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase
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F59L4G81A
250us
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F59L4G81A
Abstract: F59L two-plane program nand "4bit correction"
Text: ESMT Preliminary F59L4G81A Operation Temperature Condition -40°C~85°C Flash 4 Gbit (512M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase
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Original
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PDF
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F59L4G81A
4bit/512Byte
F59L4G81A
F59L
two-plane program nand
"4bit correction"
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