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    EMITTER SWITCHED BIPOLAR TRANSISTOR Search Results

    EMITTER SWITCHED BIPOLAR TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    EMITTER SWITCHED BIPOLAR TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    r21 diode

    Abstract: No abstract text available
    Text: APTES45SK120CT1G Buck chopper SiC FWD diode ESBT Power Module VCSS = 1200V IC = 45A @ TC = 80°C Application • Power factor corrector • AC and DC motor control • Switched Mode Power Supplies Features • Emitter Switched Bipolar Transistor® ESBT®


    Original     		PDF APTES45SK120CT1G r21 diode

    Untitled

    Abstract: No abstract text available
    Text: APTES45SK120CT1G Buck chopper SiC FWD diode ESBT Power Module VCSS = 1200V IC = 45A @ TC = 80°C Application • Power factor corrector • AC and DC motor control • Switched Mode Power Supplies Features • Emitter Switched Bipolar Transistor® ESBT®


    Original     		PDF APTES45SK120CT1G

    Untitled

    Abstract: No abstract text available
    Text: APTES45DA120CT1G Boost chopper SiC FWD diode ESBT Power Module VCSS = 1200V IC = 45A @ TC = 80°C Application • DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Emitter Switched Bipolar Transistor® ESBT® - Low saturation voltage


    Original     		PDF APTES45DA120CT1G

    r21 diode

    Abstract: ESBT vrrm 400v if 20A ultra fast recovery diode #R3A
    Text: APTES45DA120CT1G Boost chopper SiC FWD diode ESBT Power Module VCSS = 1200V IC = 45A @ TC = 80°C Application • DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Emitter Switched Bipolar Transistor® ESBT® - Low saturation voltage


    Original     		PDF APTES45DA120CT1G r21 diode ESBT vrrm 400v if 20A ultra fast recovery diode #R3A

    power supply schematic diagram

    Abstract: 3 phase inverter schematic diagram SMPS SCHEMATIC DIAGRAM PFC smps design schematic diagram solar inverter smps Power Supply Schematic Diagram hv 1000 inverter schematic diagram 6 pin smps IC ESBT smps 450 W
    Text: ESBT Emitter Switched Bipolar Transistors July 2007 www.st.com/esbt The ESBT product family Based on an emitter switching concept, the new ESBT family of high-performance power actuators provides a simple, cost-effective solution for applications requiring


    Original     		PDF O220FP-4L O247-4L SGESBT0707 power supply schematic diagram 3 phase inverter schematic diagram SMPS SCHEMATIC DIAGRAM PFC smps design schematic diagram solar inverter smps Power Supply Schematic Diagram hv 1000 inverter schematic diagram 6 pin smps IC ESBT smps 450 W

    transformer egston

    Abstract: 702 TRANSISTOR smd AM003536 Egston V7142A smd schottky diode 702 universal input voltage power supply v7142 702 transistor smd code etd29 14 pin vertical
    Text: AN2844 Application note 15 W wide range SMPS for metering based on ESBT STC03DE220HV and L6565 PWM controller 1 Introduction This document describes a 15-W flyback switched mode power supply SMPS application that uses an emitter-switched bipolar transistor (ESBT™) switch (STC03DE220HV) and


    Original     		PDF AN2844 STC03DE220HV L6565 STC03DE220HV) STEVAL-ISA057V1 transformer egston 702 TRANSISTOR smd AM003536 Egston V7142A smd schottky diode 702 universal input voltage power supply v7142 702 transistor smd code etd29 14 pin vertical

    ignition driver

    Abstract: FJAFS1510A fairchild Resonant IC FJAFS1510ATU FDC655 HV cascode smps cascode smps
    Text: FJAFS1510A ESBCTM Rated NPN Power Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, SMPS, HV Industrial Power Supplies


    Original     		PDF FJAFS1510A FJAFS1510A ignition driver fairchild Resonant IC FJAFS1510ATU FDC655 HV cascode smps cascode smps

    Untitled

    Abstract: No abstract text available
    Text: FJAFS1510A ESBCTM Rated NPN Power Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, SMPS, HV Industrial Power Supplies


    Original     		PDF FJAFS1510A FJAFS1510A

    fairchild power bjt

    Abstract: fjp2160d fdc6551 cascode mosfet switching ESBC j2160 J2160D C 1008 y transistor input output bjt npn transistor
    Text: FJP2160D ESBCTM Rated NPN Silicon Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, HV Industrial Power Supplies • Motor Driver and Ignition Driver


    Original     		PDF FJP2160D fairchild power bjt fdc6551 cascode mosfet switching ESBC j2160 J2160D C 1008 y transistor input output bjt npn transistor

    HV cascode smps

    Abstract: STC05DE120HV JESD97 flyback smps c05de
    Text: STC05DE120HV Hybrid emitter switched bipolar transistor ESBT 1200V - 5A - 0.18 W Target Specification General features Table 1. General features VCS ON IC RCS(ON) 0.9V 5A 0.18Ω • High voltage / low current Cascode configuration ■ Low equivalent on resistance


    Original     		PDF STC05DE120HV 150kHz 2002/93/EC O247-4L STC05DE120HV HV cascode smps JESD97 flyback smps c05de

    APTES80DA120C3G

    Abstract: No abstract text available
    Text: APTES80DA120C3G Boost chopper SiC FWD diode ESBT Power Module VCSS = 1200V IC = 80A @ TC = 80°C Application • Power factor corrector Features • Emitter Switched Bipolar Transistor® ESBT® - Low saturation voltage - High voltage rating - Ultra fast switching speed


    Original     		PDF APTES80DA120C3G APTES80DA120C3G

    Untitled

    Abstract: No abstract text available
    Text: APTES80DA120C3G Boost chopper SiC FWD diode ESBT Power Module VCSS = 1200V IC = 80A @ TC = 80°C Application • Power factor corrector Features • Emitter Switched Bipolar Transistor® ESBT® - Low saturation voltage - High voltage rating - Ultra fast switching speed


    Original     		PDF APTES80DA120C3G

    HV cascode smps

    Abstract: JESD97 STC05DE120HV
    Text: STC05DE120HV Hybrid emitter switched bipolar transistor ESBT 1200V - 5A - 0.18 W Target Specification General features Table 1. General features VCS ON IC RCS(ON) 0.9V 5A 0.18Ω • High voltage / low current Cascode configuration ■ Low equivalent on resistance


    Original     		PDF STC05DE120HV 150kHz 2002/93/EC STC05DE120HV HV cascode smps JESD97

    ST 358

    Abstract: isotop bipolar JESD97 STE70IE120 E70IE120
    Text: STE70IE120 Monolithic Emitter Switched Bipolar Transistor ESBT 1200 V - 70 A - 0.014 Ω Power Module Target data General features VCS ON IC RCS(ON) 1V 70A 0.014W • High voltage / high current Cascode configuration ■ Ultra low equivalent on resistance


    Original     		PDF STE70IE120 STE70DE120 E70IE120 ST 358 isotop bipolar JESD97 STE70IE120 E70IE120

    Untitled

    Abstract: No abstract text available
    Text: STC06IE170HV Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15Ω PRELIMINARY DATA Features VCS ON IC RCS(ON) 0.7V 6A 0.15Ω • High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz


    Original     		PDF STC06IE170HV STC06IE170HV O247-4L

    Untitled

    Abstract: No abstract text available
    Text: STC06IE170HV Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15Ω PRELIMINARY DATA Features VCS ON IC RCS(ON) 0.7V 6A 0.15Ω • High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz


    Original     		PDF STC06IE170HV 2002/93/EC O247-4L STC06IE170HV

    HV cascode smps

    Abstract: C06IE170HV JESD97 STC06IE170HV
    Text: STC06IE170HV Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15Ω PRELIMINARY DATA Features VCS ON IC RCS(ON) 0.7V 6A 0.15Ω • High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz


    Original     		PDF STC06IE170HV O247-4L STC06IE170HV HV cascode smps C06IE170HV JESD97

    Untitled

    Abstract: No abstract text available
    Text: STC04IE170HP Monolithic emitter switched bipolar transistor ESBT 1700 V - 4 A - 0.17 Ω Features VCS ON IC RCS(ON) 0.7 V 4A 0.17 Ω • High voltage / high current cascode configuration ■ Low equivalent ON resistance ■ Very fast-switch, up to 150 kHz


    Original     		PDF STC04IE170HP O247-4L STC04IE170HP

    STC04IE170HV

    Abstract: C04IE170HV 12676
    Text: STC04IE170HV Monolithic emitter switched bipolar transistor ESBT 1700 V - 4 A - 0.17 Ω Features VCS ON IC RCS(ON) 0.7 V 4A 0.17 Ω • High voltage / high current cascode configuration ■ Low equivalent ON resistance ■ Very fast-switch: up to 150 kHz


    Original     		PDF STC04IE170HV O247-4L STC04IE170HV C04IE170HV 12676

    JESD97

    Abstract: P12IE95F4 STP12IE95F4 o811
    Text: STP12IE95F4 Emitter Switched Bipolar Transistor ESBT 950 V - 12 A - 0.083 Ω Preliminary Data General features VCS ON IC 1V 12A RCS(ON) 0.083 • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch up to 150 kHz


    Original     		PDF STP12IE95F4 O220FP-4L STP12IE95F4 JESD97 P12IE95F4 o811

    P12IE95F4

    Abstract: STP12IE95F4 JESD97
    Text: STP12IE95F4 Emitter Switched Bipolar Transistor ESBT 950 V - 12 A - 0.083 Ω Preliminary Data General features VCS ON IC 1V 12A RCS(ON) 0.083 • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch up to 150 kHz


    Original     		PDF STP12IE95F4 O220FP-4L STP12IE95F4 P12IE95F4 JESD97

    Untitled

    Abstract: No abstract text available
    Text: STC04IE170HV Monolithic emitter switched bipolar transistor ESBT 1700 V - 4 A - 0.17 Ω Features • VCS ON IC RCS(ON) 0.7 V 4A 0.17 Ω High voltage / high current cascode configuration ■ Low equivalent ON resistance ■ Very fast-switch: up to 150 kHz


    Original     		PDF STC04IE170HV O247-4L STC04IE170HV

    C04IE170HP

    Abstract: STC04IE170HP
    Text: STC04IE170HP Monolithic emitter switched bipolar transistor ESBT 1700 V - 4 A - 0.17 Ω Features VCS ON IC RCS(ON) 0.7 V 4A 0.17 Ω • High voltage / high current cascode configuration ■ Low equivalent ON resistance ■ Very fast-switch, up to 150 kHz


    Original     		PDF STC04IE170HP O247-4L STC04IE170HP C04IE170HP

    emitter switched bipolar transistor

    Abstract: C12IE90HV JESD97 STC12IE90HV
    Text: STC12IE90HV Emitter Switched Bipolar Transistor ESBT 900 V - 12 A - 0.083 Ω Preliminary Data General features VCS ON IC 1V 12A RCS(ON) 0.083 • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch up to 150 kHz


    Original     		PDF STC12IE90HV O247-4L STC12IE90HV emitter switched bipolar transistor C12IE90HV JESD97