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    EPC8007 Search Results

    EPC8007 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    EPC8007ENGR Efficient Power Conversion FETs - Single, Discrete Semiconductor Products, TRAN GAN 40V 3.8A BUMPED DIE Original PDF
    EPC8007TENGR Efficient Power Conversion FETs - Single, Discrete Semiconductor Products, TRANS GAN 40V 3.8A BUMPED DIE Original PDF

    EPC8007 Datasheets Context Search

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    j731

    Abstract: No abstract text available
    Text: EPC8007 – Enhancement Mode Power Transistor Preliminary Specification Sheet Features: • VDS, 40V • RDS on , 160 mΩ • ID, 3.8 A • Optimized eGaN FET for high frequency applications EPC8007 eGaN FETs are supplied only in passivated die form with solder bars


    Original     		PDF EPC8007 EPC8007 j731

    EPC8004

    Abstract: No abstract text available
    Text: APPLICATION NOTE: AN015 eGaN FETs for Multi-MHz Applications Introducing a Family of eGaN FETs for Multi-Megahertz Hard Switching Applications EFFICIENT POWER CONVERSION Michael de Rooij, PhD, Johan Strydom, PhD The ultra high speed switching capabilities of gallium nitride transistors have now been


    Original     		PDF AN015 EPC8000 ATS-54150K-C2-R0 EPC8004

    Untitled

    Abstract: No abstract text available
    Text: Figure 4: Typical Waveforms for VIN = 28 V to 3.3 V/4 A 5 MHz Buck converter CH2: (VOUT) Switch node voltage –– CH4: VPWM Input voltage NOTE. The EPC9027 development board does not have any current or thermal protection on board. Figure 3: Proper Measurement of Switch Node – OUT


    Original     		PDF EPC9027 EPC8007