Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V, Ic = -1A *Good hFE linearity.
|
Original
|
2SB1260
2SB1260
OT-89
2SB1260L
2SB1260-AB3-R
2SB1260L-AB3-R
OT-89
QW-R208-017
|
PDF
|
2SA1836
Abstract: SC-75 D1561
Text: DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR 2SA1836 PNP SILICON EPITAXIAL TRANSISTOR PACKAGE DRAWING Unit: mm DESCRIPTION The 2SA1836 is PNP silicon epitaxial transistor. 0.15 +0.1 –0.05 0.3 +0.1 –0 FEATURES • High voltage: VCEO = −50 V • Can be automatically mounted
|
Original
|
2SA1836
2SA1836
SC-75
SC-75
D1561
|
PDF
|
marking L5
Abstract: 2SC4783 SC-75
Text: DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR 2SC4783 NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DRAWING Unit: mm The 2SC4783 is NPN silicon epitaxial transistor. 0.15 +0.1 –0.05 0.3 +0.1 –0 FEATURES • High voltage: VCEO = 50 V • Can be automatically mounted
|
Original
|
2SC4783
2SC4783
SC-75
marking L5
SC-75
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UTC 2SA1627 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627 is designed for general purpose amplifier and high speed switching applications. FEATURES *High voltage *Low collector saturation voltage. *High-speed switching
|
Original
|
2SA1627
2SA1627
O-126
QW-R204-010
|
PDF
|
transistor b1
Abstract: hlb124 NPN Transistor 600V 1S1000 utchlb124
Text: UTC HLB124 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC HLB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. 1 FEATURES * High Speed Switching * Low Saturation Voltage
|
Original
|
HLB124
HLB124
O-220
HLB124L
QW-R203-029
transistor b1
NPN Transistor 600V
1S1000
utchlb124
|
PDF
|
2SA1627
Abstract: pnp transistor 600V 2sa162
Text: UTC 2SA1627 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627 is designed for general purpose amplifier and high speed switching applications. FEATURES *High voltage *Low collector saturation voltage. *High-speed switching
|
Original
|
2SA1627
2SA1627
O-126
QW-R204-010
pnp transistor 600V
2sa162
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR 1 DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. SOT-89 FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity.
|
Original
|
2SB1260
2SB1260
OT-89
O-252
2SB1260L
2SB1260-x-AB3-F-R
2SB1260L-x-AB3-F-R
2SB1260-x-TN3-F-R
2SB1260L-x-TN3-F-R
2SB1260-x-TN3-F-T
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UTC 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V,Ic = -1A *Good hFE linearity. *Low VCE sat SOT-89
|
Original
|
2SB1260
2SB1260
OT-89
QW-R208-017
|
PDF
|
BCP68
Abstract: BCP69T1 BCP69T3
Text: ON Semiconductort BCP69T1 PNP Silicon Epitaxial Transistor ON Semiconductor Preferred Device MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the
|
Original
|
BCP69T1
OT-223
BCP69T1/D
BCP68
BCP69T1
BCP69T3
|
PDF
|
bcp68t1
Abstract: BCP68T3 BCP69T1 SMD310
Text: ON Semiconductort BCP68T1 NPN Silicon Epitaxial Transistor ON Semiconductor Preferred Device MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the
|
Original
|
BCP68T1
OT-223
r14525
BCP68T1/D
bcp68t1
BCP68T3
BCP69T1
SMD310
|
PDF
|
2SA1627A
Abstract: 600v pnp
Text: UTC 2SA1627A PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. FEATURES *High voltage *Low collector saturation voltage. 1 *High-speed switching
|
Original
|
2SA1627A
2SA1627A
O-126C
QW-R217-004
600v pnp
|
PDF
|
BCP68T1
Abstract: BCP68T3 BCP69T1 SMD310
Text: ON Semiconductort BCP68T1 NPN Silicon Epitaxial Transistor ON Semiconductor Preferred Device MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the
|
Original
|
BCP68T1
OT-223
r14525
BCP68T1/D
BCP68T1
BCP68T3
BCP69T1
SMD310
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UTC 2SA1627A PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. FEATURES *High voltage *Low collector saturation voltage. 1 *High-speed switching
|
Original
|
2SA1627A
2SA1627A
O-126C
QW-R217-004
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UTC 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V,Ic = -1A *Good hFE linearity. *Low VCE sat SOT-89
|
Original
|
2SB1260
2SB1260
OT-89
100ms
QW-R208-017
|
PDF
|
|
|
2sa1013
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1013 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc.
|
Original
|
2SA1013
2SA1013
2SA1013L-x-AB3-R
2SA1013G-x-AB3-R
2SA1013L-x-T92-B
2SA1013G-x-T92-B
2SA1013L-x-T92-K
2SA1013G-x-T92-K
2SA1013L-x-T9N-B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1013 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc.
|
Original
|
2SA1013
2SA1013
2SA1013G-x-AB3-R
2SA1013L-x-T92-B
2SA1013G-x-T92-B
2SA1013L-x-T92-K
2SA1013G-x-T92-K
2SA1013L-x-T9N-B
2SA1013G-x-T9N-B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1013 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc.
|
Original
|
2SA1013
2SA1013
2SA1013L-x-AB3-R
2SA1013G-x-AB3-R
2SA1013L-x-T92-B
2SA1013G-x-T92-B
2SA1013L-x-T92-K
2SA1013G-x-T92-K
2SA1013L-x-T9N-B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UTC 2SC2482 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR APPLICATIONS *HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS *COLOR TV HORIZ. DRIVER APPLICATIONS *COLOR TV CHROMA OUTPUT APPLICATIONS 1 FEATURES *High Voltage :V BR CEO= 300V
|
Original
|
2SC2482
O-92NL
100ms*
500ms*
QW-R211-015
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UTC 2SC2482 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR APPLICATIONS *HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS *COLOR TV HORIZ. DRIVER APPLICATIONS *COLOR TV CHROMA OUTPUT APPLICATIONS 1 FEATURES *High Voltage :V BR CEO= 300V
|
Original
|
2SC2482
O-92NL
QW-R211-015
|
PDF
|
2SA1201
Abstract: No abstract text available
Text: UTC 2SA1201 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1201 is designed for power amplifier and 1 voltage amplifier applications. FEATURES *High voltage: VCEO= -120V *High transition frequency: fT=120MHz typ.
|
Original
|
2SA1201
2SA1201
-120V
120MHz
OT-89
QW-R208-024
|
PDF
|
transistor marking 2A H
Abstract: mitsubishi vcb 2sc4357 mitsubishi symbol marking La 4108
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC4357 FOR HIGH CURRENT DRIVE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC4357 is a silicon NPN epitaxial type transistor designed for high collector current, for high voltage.
|
OCR Scan
|
2SC4357
2SC4357
500mW
transistor marking 2A H
mitsubishi vcb
mitsubishi symbol marking
La 4108
|
PDF
|
semiconductor relay 6v
Abstract: 2SA1287 2SC3247
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1287 FOR RELAY DRIVE, POWER SUPPLY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1287 is silicon PNP epitaxial type transistor. Designed with high Voltage, high collector current, dissipation and high
|
OCR Scan
|
2SA1287
2SA1287
2SC3247.
to800
-500mA,
-10mA)
900mW
semiconductor relay 6v
2SC3247
|
PDF
|
2sa1368
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1368 FOR HIGH VOLTAGE DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1368 is a silicon PNP epitaxial type transistor. It designed with OUTLINE DRAWING umt mm high collector dissipation, high voltage.
|
OCR Scan
|
2SA1368
2SA1368
2SC3438.
-800mA)
130MHz
500mW
SC-62
Ta-25-C
-25VA
|
PDF
|
2SC5209
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5209 FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC5209 is a silicon NPN epitaxial type transistor. It designed with high voltage, high collector current and high hFE.
|
OCR Scan
|
2SC5209
2SC5209
2SA1944.
500mA
|
PDF
|
