EPITAXX
Abstract: ETX505Q large area quadrant photodiode ETX100TL-ST ingaas LED epitaxx quadrant ETX1000T InGaAs Epitaxx linear T05 Package ETX300
Text: EPITAXX INC EHE D 33bG40b QGGGQbB =1 r -^ - o i Telecommunications: The Local Loop EPITAXX has been a pioneer in developing packaging which supports high volume production while reducing component costs. EPITAXX receptacled photodiodes, laser diodes, and LEDs offer high reliability,
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33bG40b
EDL1300RFC
R1300
ETX75FJ-SLR
ETX75FC
-45dB
-55dB
EPITAXX
ETX505Q
large area quadrant photodiode
ETX100TL-ST
ingaas LED
epitaxx quadrant
ETX1000T
InGaAs Epitaxx linear
T05 Package
ETX300
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EPITAXX
Abstract: EPITAXX ETX 300 EPITAXX ETX 75 ETX1000T ETX300T ETX500T ETX500T-GR2.2 LIDAR ETX 40 ETX100T-GR2.2
Text: EPITAXX INC SDE D • 33b0M0b GQQGlbG 7 ■ EPX - p 4 l - 4 | ETX-GR SERIES EPITAXX NEAR-INFRARED ROOM-TEMPERATURE INDIUM GALLIUM ARSENIDE PHOTODETECTORS FOR 1.0-2.6 fim DESCRIPTION:_ EPITAXX GR-Series Extended Wavelength photodetectors consist of compositionally graded
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33b0M0b
EPITAXX
EPITAXX ETX 300
EPITAXX ETX 75
ETX1000T
ETX300T
ETX500T
ETX500T-GR2.2
LIDAR
ETX 40
ETX100T-GR2.2
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EPITAXX
Abstract: InGaAs Epitaxx InGaAs photodiode TWO COLOR DETECTOR two color photodiode EPITAXX ingaas detector ETX 40
Text: I 33b040b QQOGISE fi « E P X SGE D EPITAXX INC EPITAXX -7 ETX 2000SI Si/lnGaAs Two Color Photodiodes Description: EPITAXX ETX 2000Si combines a 2.5 mm diameter Silicon photodiode over a 2.0 mm diameter InGaAs photodiode within a hermetic T05 package. This combination device
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33b040b
2000SI
2000Si
10E-14
X10E-13
33bOMQb
G0001S3
EPITAXX
InGaAs Epitaxx
InGaAs photodiode
TWO COLOR DETECTOR
two color photodiode
EPITAXX ingaas detector
ETX 40
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ingaas LED
Abstract: EPITAXX ETX1000T InGaAs quadrant large area quadrant photodiode satellite l300 T05 Package ETX25B InGaAs Epitaxx ETX505Q
Text: EPITAXX INC 5QE D • 33b04Qb OGQOlBb T H E P X 7^//^// Telecommunications: The Local Loop EPITAXX has been a pioneer in developing packaging which supports high volume production while reducing component costs. EPITAXX receptacled photodiodes, laser diodes, and LEDs offer high reliability,
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33b040b
EDL1300RFC
ETX75CER
ETX100T
ETX100TL
ETX300T
ETX300CER
EDL1300CD
ETX1300T
ETX1550T
ingaas LED
EPITAXX
ETX1000T
InGaAs quadrant
large area quadrant photodiode
satellite l300
T05 Package
ETX25B
InGaAs Epitaxx
ETX505Q
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1300nm
Abstract: ingaas LED diode e4e EPITAXX photodiode led 609 nm
Text: EPITAXX INC 33L.04DL 0000151 Ö 54E D I EPITAXX ETX-ASOM-LD/PD & LED/PD T-41-91 Application-Specific Integrated 1300nm Electro-Optical Modules: Description: EPITAXX ETX-ASOM modules combine 1300nm active components with passive components within a single package. The ASOM-LD/PD consists of a 1300nm laser diode
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1300nm
100mA
100mA
1300nm
ingaas LED
diode e4e
EPITAXX
photodiode led 609 nm
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EPITAXX
Abstract: ETX505Q epitaxx quadrant InGaAs Epitaxx ETX 40 EPITAXX 40
Text: EPITAXX INC 54E D m 33b0M0b 0D00GÔ3 4 Ï EPITAXX ETX1Q5D, ETX505Q T '-m-m Dual and Quadrant Position Sensing InGaAs Photodiodes Description: EPITAXX ETX 105D and ETX 505Q are InGaAs bi-cell and quadrant photodiodes. They are sensitive in the near infrared spectrum and are characterized by low noise and long
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33b0M0b
0D00QÃ
ETX505Q
EPITAXX
ETX505Q
epitaxx quadrant
InGaAs Epitaxx
ETX 40
EPITAXX 40
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epitaxx
Abstract: InGaAs Epitaxx
Text: EPITAXX INC 5 ME D • 33b040b GDGGDbl T EPITAXX ETX 60B High Speed Back-Illuminated InGaAs PIN Photodiode Description: EPITAXX ETX 60B is a small area planar InGaAs photodiode mounted on a ceramic subcarrier. The device is illuminated through the substrate and its very low capacitance allows direct modulation at
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33b040b
epitaxx
InGaAs Epitaxx
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epitaxx
Abstract: large area quadrant photodiode ETX1300RST ETX75FJ
Text: 24E D • 33bG40b GGGGObB =1 Telecommunications: The Local Loop EPITAXX has been a pioneer in developing packaging which supports high volume production while reducing component costs. EPITAXX receptacled photodiodes, laser diodes, and LEDs offer high reliability,
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33bG40b
EDL1300RFC
EDL1300RST
EDL1300FJ-S
EDL1300FC-S-XX*
R1300
ETX75FJ-SLR
ETX75FC
-45dB
-55dB
epitaxx
large area quadrant photodiode
ETX1300RST
ETX75FJ
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EPITAXX
Abstract: T05 Package InGaAs photodiode ETX 40 Hz172 two color photodiode TWO COLOR DETECTOR LC InGaAs This two color detector is useful in temperature sensing applications
Text: 33b040b 000Q1SE ö H E P X SGE D EPITAXX INC IEPITAXX ETX 2000SI Si/lnGaAs Two Color Photodiodes Description: EPITAXX ETX 2000Si combines a 2.5 mm diameter Silicon photodiode over a 2.0 mm diameter InGaAs photodiode within a hermetic T05 package. This combination device
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33b040b
000Q1SE
2000SI
2000Si
33bQMQb
EPITAXX
T05 Package
InGaAs photodiode
ETX 40
Hz172
two color photodiode
TWO COLOR DETECTOR
LC InGaAs
This two color detector is useful in temperature sensing applications
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EPITAXX ETX 75
Abstract: epitaxx ETX300T-GR1.9 LIDAR ETX 40 epitaxx 250 ETX100T-GR2.2 InGaAs Epitaxx ETX300
Text: EPITAXX INC SDE D • 33bDMDh GQGDlbO 7 B IEP X - p 4 l - 4 | ETX-GR SERIES NEAR-INFRARED ROOM-TEMPERATURE INDIUM GALLIUM ARSENIDE PHOTODETECTORS FOR 1.0-2.6 fim DESCRIPTION: EPITAXX GR-Series Extended Wavelength photodetectors consist of compositionally graded
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EPITAXX ETX 75
Abstract: InGaAs Epitaxx PIN ETX 75 FJ M EPITAXX J254 100rst 100RF ingaas photodetector epitaxx ETX 75FJ/FC 75FJ/FC-XX FC/JDSU ETX
Text: EPITAXX INC SOE D 33bCm0b DQQGLbS □ W Ê E P X ETX 75FJ/FC-xx Series ETX 1OORxx Series EPITAXX H ig h Speed InGaAs Photodetector M odules Fibered and Connector Receptacle Packages Features • Low capacitance for high bandwidth ■ Low dark current for high sensitivity
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33bOHab
75FJ/FC-xx
TA-TSY-000468
MIL-STD-883C
EPITAXX ETX 75
InGaAs Epitaxx PIN ETX 75 FJ M
EPITAXX
J254
100rst
100RF
ingaas photodetector
epitaxx ETX 75FJ/FC
FC/JDSU ETX
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epitaxx
Abstract: 750IFJ
Text: EPITAXX INC 10E » | 33bOHOt 0Q0003i 1 | ~ Y / ~ o7 Prel imirary Pnxluct Information ERM 7 5 0 1FJ EPITAXX InGaAs Planar PIN Photodiode! GaAs FET Hybrid Receiver Module DESCRIPTION T h e ERM 7501FJ is a h y b rid device containing a high speed InGaAs p lan ar
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33bOHOt
0Q0003i
7501FJ
7501FJ
7501FC
epitaxx
750IFJ
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PIN Photodiode For CATV Receiver
Abstract: epitaxx EPM700
Text: EPITAXX INC SGE D m 33b040b GGOOlMb 2 H E P X 53 EPITAXX EPM700 Low Distortion InGaAs PIN Photodiode for CATV / Analog Video Features Low intermodulation distortion Low optical back reflection Low capacitance High responsivity at 1330 nm and 1550 nm Planar, passivated photodiode chip
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33b040b
EPM700
EPM700
PIN Photodiode For CATV Receiver
epitaxx
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InGaAs Epitaxx
Abstract: EPITAXX InGaas PIN photodiode chip InGaas PIN photodiode chip back illuminated 100C
Text: E P I T A X X INC S4E D • 33b040b DODDDbT T ■ EPITAXX ETX 60B High Speed Back-Illuminated InGaAs PIN Photodiode Description: EPITAXX ETX 60B is a small area planar InGaAs photodiode mounted on a ceramic subcarrier. The device is illuminated through the substrate and its very low capacitance allows direct modulation at
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33b040b
-T74MU
33b0M0b
D00GG70
200pS/div
InGaAs Epitaxx
EPITAXX
InGaas PIN photodiode chip
InGaas PIN photodiode chip back illuminated
100C
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photodetector modules
Abstract: ETX 40 epitaxx E7X75FJ inGaAs photodiode 1550 75FJ ingaas photodetector EPITAXX etx 40
Text: EPITAXX INC SOE D • 33b040b 00001b2 □ HIEPX 7^/^// ET X 75FJ/FC-xx Series ETX lO O R x x Series EPITAXX High Speed InGaAs Photodetector Modules Fibered and Connector Receptacle Packages Features ■ Low capacitance for high bandwidth ■ Low dark current for high sensitivity
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33b040b
00001b2
75FJ/FC-xx
TA-TSY-000468
MIL-STD-883C
33bD40b
10ORxx
10ORFC
photodetector modules
ETX 40
epitaxx
E7X75FJ
inGaAs photodiode 1550
75FJ
ingaas photodetector
EPITAXX etx 40
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EPITAXX ETX 300
Abstract: EPITAXX EPITAXX ETX 75 EPITAXX ETX 100 RFC 2 ETX1300FJ LED pigtailed
Text: EPITAXX INC SDE J> • 33b040b OOOQlbfl 1 « E P X -p<//-07 ETX 1 3 0 0 RFC, ETX 1 3 0 0 RST EPITAXX ETX1300FJ' ETX1300FC 1300 nm High Power ELED Modules Features ■ High coupled pow er 75 |iW typical into multimode ■ High speed response (3.5 ns typical)
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33b040b
1300RFC,
1300RST
ETX1300FJ
1300FC
1300RFC
1300FJ-S
1300FC-M
EPITAXX ETX 300
EPITAXX
EPITAXX ETX 75
EPITAXX ETX 100 RFC 2
LED pigtailed
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EPITAXX
Abstract: InGaAs Epitaxx 1300T
Text: EPITAXX INC 33bDMDb 50E D DDQ017Ö *4 • EPX ¿ ff—Q EDL 1300T EPITAXX 1.3 Am Laser Diode in CD Package Features ■ High optical output power: PQ= 5 mW ■ High speed: tr, tp = 0.5 ns (max. ■ Stable fundamental transverse mode ■ Built-in InGaAs photodiode for monitoring
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EDL1300Tisa
EPITAXX
InGaAs Epitaxx
1300T
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Untitled
Abstract: No abstract text available
Text: EPITAXX SQE » INC • 3BbQ4Qti GQGG1S0 H H E P X " 7 ^ 4 fcKII A A A ETX 25B High Speed Back-Illuminated InGaAs PIN Photodiode Description: EPITAXX ETX 25B is a small area planar InGaAs photodiode mounted on a ceramic subcarrier. The device is illuminated through the substrate and its very low capacitance allows direct modulation at
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25/am
1300nm
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EPITAXX
Abstract: GAAS FET AMPLIFIER for optical receiver EPITAXX ERM504 InGaas PIN photodiode, 1550 sensitivity TIA AGC application note TRANSIMpedance Amplifier ERM504FJ-S
Text: EPITAXX INC SOE T > m 33b040b 00001Û2 b « E P X E R M 501 ERM 5 0 4 EPITAXX Sonet OC-1 & OC-3 PIN-Transim pedance A m p lifie r Receiver M odules Features • InGaAs PIN Photodiode and GaAs Transimpedance Amplifier • Exceeds Sonet sensitivity and overload requirements
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33b0mDb
ERM501
ERM504
ERM504
ERM501/504RST
ERM501/504FJ
EPITAXX
GAAS FET AMPLIFIER for optical receiver
EPITAXX ERM504
InGaas PIN photodiode, 1550 sensitivity
TIA AGC application note
TRANSIMpedance Amplifier
ERM504FJ-S
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epitaxx
Abstract: No abstract text available
Text: EPITAXX INC 50E t • 33b0H0b 0000178 4 « E P X 7 ~ 4/~ O S ~ EPITAXX E P L 1 30Q T 1.3 uni Laser Diode in CD Package Features ■ High optical output power: PQ= 5 mW • High speed: tr, ^ = 0.5 ns max. ■ Stable fundamental transverse mode ■ Built-in InGaAs photodiode for monitoring
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33b0H0b
EPITAXXEDL1300Tisa
epitaxx
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optical detector
Abstract: No abstract text available
Text: EPITAXX INC SOE D • 33b040b 0000162 b B E P X ER M 501 E RIM5 0 4 EPITAXX S o n et OC-1 & OC-3 PIN-Tlransim pedavtce A m p lifie r R e ce iv e r M o d u le s Features ■ InGaAs PIN Photodiode and GaAs Transimpedance Amplifier • Exceeds Sonet sensitivity and
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33b040b
ERM501
ERM504
ERM501,
ERM504
501/504R
ERM50I/504RST
501/504FJ
optical detector
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EPITAXX
Abstract: EPITAXX erm 7501FC 0824 452 fet photodiode ingaas pin photodiode 62.5
Text: 10E D I 33bOMDh DDODOBi 1 | EPITAXX INC j r f/_ ¿>7 Prel iminary Product Information ERM 7 5 0 TFJ EPITAXX InGaAs Planar PIN Photodiode/GaAs FET H ybrid Receiver Module DESCRIPTION T h e ERM 7501FJ is a h y b r id d e vice c o n ta in in g a h ig h speed In G aA s p la n a r
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33b0M0L
DD0D03Ã
7501FJ
7501FJ
7501FJ/FC-62
7501FC
7501FJ/FC-SM
EPITAXX
EPITAXX erm
0824
452 fet
photodiode ingaas
pin photodiode 62.5
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EPITAXX ETX 100 RFC 2
Abstract: EPITAXX ETX 75 MM3575 epitaxx eLED epitaxx 250 ETX1300RST
Text: EPITAXX INC SOE » • 33b040b OQQQlbfl 1 « E P X -pV/-07 E T X 1 3 0 0 R FC, E T X 1 3 0 0 RST EPITAXX ETX1300FJ' ETX1300FC 1 3 0 0 nm H ig h P ow er E L E D M o d u le s Features ■ High coupled power 75 |iW typical into multimode ■ High speed response (3.5 ns typical)
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33b040b
-pV/-07
ETX1300FJ'
X1300FC
ERM500
00DD17S
300RFC,
1300RST,
1300FJ,
EPITAXX ETX 100 RFC 2
EPITAXX ETX 75
MM3575
epitaxx
eLED
epitaxx 250
ETX1300RST
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Detector with Pigtail 1550 nm
Abstract: EPITAXX EPM700J Fabry-Perot-Laser 1550 pin Photodiode 1550 nm connector RADIALL EPX Radiall detector coaxial inGaAs photodiode 1550 InGaas PIN photodiode chip InGaas PIN photodiode, 1550
Text: EPITAXX INC SOE D m 33b04Qb OOÜOlMb 2 • EPX 53 EPITAXX_ EPM70° Low Distortion InGaAs PIN Photodiode for CATV / Analog Video Features Low interm odulation distortion Low optical back reflection Low capacitance High responsivity at 1330 nm and 1550 nm
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33b04Qb
EPM70Â
EPM700
Detector with Pigtail 1550 nm
EPITAXX
EPM700J
Fabry-Perot-Laser 1550
pin Photodiode 1550 nm
connector RADIALL EPX
Radiall detector coaxial
inGaAs photodiode 1550
InGaas PIN photodiode chip
InGaas PIN photodiode, 1550
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