styrol
Abstract: No abstract text available
Text: TCP DIMENSIONS • TCP Standard (1) Structure AA expansion sketch of cross section (Note) 1) * Size indicates resin thickness included 2) Tape rolling length is 20m long Structural specification Name 1 Basefilm 2 Conductive body Plating 3 Sealing Material
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6 017 03 61
Abstract: 1D-22 H223 MRS16
Text: QYLURQPHQWDO 1RWH Balance of materials MRS16 valid as of KW 49 / 01 Part Substrate (Ceramic Material Al2O3 SiO2 Glazeformer* MgO, BaO, CaO, SrO Trace elements 7L22, 1D22, .22, )H223 subtotal Resistive layer (Metal film) Nickel Chromium Copper Iron Tin Nickel
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MRS16
6RQ30
6 017 03 61
1D-22
H223
MRS16
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LL7101
Abstract: No abstract text available
Text: Tibeliusgatan 7 S-761 50 NORRTÄLJE SWEDEN International +46 - 176 13930 +46 - 176 13935 Phone Fax Domestic 0176-13930 0176-13935 Zero Field Input Transformer LL7101 In a Zero Field ZF transformer application, the magnetic field caused by the input signal is balanced by a
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S-761
LL7101
R980626
LL7101
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Untitled
Abstract: No abstract text available
Text: TJC 7 Indoor voltage transformers Highest voltage for equipment [kV] 36 - 40.5 Power frequency test voltage, 1 min. [kV] 70 - 95 Lightning impulse test voltage [kV] 170 - 200 Max. rated burden, classes [VA/cl] 50/0.2 - 150/0.5 - 250/1 Residual winding [VA/cl]
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50-200/6P
3440-527-I/2000
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12A31
Abstract: abb voltage transformer 5P 5P GMT_G680LT1_SOT23_5P 20 kV Transformer dimensions
Text: KOKS xxAxx Bus current transformers Highest voltage for equipment [kV] Power frequency test voltage, 1 min. [kV] Lighting impulse test voltage [kV] Rated continous thermal current [A] Rated short-time thermal current 1s [kA] Burdens, classes [VA/cl] Reconnectible
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1VLC000515
12A31
abb voltage transformer
5P 5P
GMT_G680LT1_SOT23_5P
20 kV Transformer dimensions
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RD01MUS1-101
Abstract: RD01MSU1 RD01MUS1 transistor 636 mitsubishi epoxi resin fet 547 1351 transistor rd01mus1 applications DD 127 D TRANSISTOR 2779, transistor
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
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RD01MUS1
520MHz
RD01MUS1
520MHz
RD01MUS1-101
RD01MSU1
transistor 636 mitsubishi
epoxi resin
fet 547
1351 transistor
rd01mus1 applications
DD 127 D TRANSISTOR
2779, transistor
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2779, transistor
Abstract: 1348 transistor RD01MUS1 RD01MSU1 fet 547
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
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RD01MUS1
520MHz
RD01MUS1
520MHz
2779, transistor
1348 transistor
RD01MSU1
fet 547
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GP 839 DIODE
Abstract: RD01MUS2 GP 809 DIODE GP 841 Diode MOS FET 1127 RF Transistor s-parameter vhf RD01MUS2-101 t06 TRANSISTOR 5343 transistor transistor M 839
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 4.4+/-0.1 FEATURES •High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz •High Efficiency: 65%typ.
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RD01MUS2
520MHz
520MHz
RD01MUS2
GP 839 DIODE
GP 809 DIODE
GP 841 Diode
MOS FET 1127
RF Transistor s-parameter vhf
RD01MUS2-101
t06 TRANSISTOR
5343 transistor
transistor M 839
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transistor D 5024
Abstract: RD00HVS1 8582
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
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RD00HVS1
175MHz
RD00HVS1
175MHz
transistor D 5024
8582
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1383 transistor
Abstract: TRansistor C 101 RD00HVS1-101 4134 mosfet RD00HVS1 TRANSISTOR 1383 T06M transistor D 5024
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
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RD00HVS1
175MHz
RD00HVS1
175MHz
1383 transistor
TRansistor C 101
RD00HVS1-101
4134 mosfet
TRANSISTOR 1383
T06M
transistor D 5024
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antena microondas
Abstract: circuito sensor capacitivo Denso radar sensores capacitivos R2N P1F transistor A5E024 bocina transistor J1F LUT400 SENSORES INDUCTIVOS
Text: 4 Siemens AG 2014 Medida de nivel 4/2 Sinopsis de productos 4/9 Detección de nivel Sensores capacitivos Medición continua continuación Accesorios para sistemas ultrasónicos 4/185 – Bridas de fijación EA 4/187 – Soportes de montaje FMS 4/189 – Sensor de temperatura TS-3
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LR200
CLS300
LR250
7ML1830-1HA
7ML1830-1MC
7ML1830-1MM
antena microondas
circuito sensor capacitivo
Denso radar
sensores capacitivos
R2N P1F transistor
A5E024
bocina
transistor J1F
LUT400
SENSORES INDUCTIVOS
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transistor t06
Abstract: RD00HHS1-101 lal04na1r0 RD00HHS1 t06 TRANSISTOR LAL04NAR39 TRANSISTOR 7533 A LAL04NA
Text: ELECTROSTATIC SENSITIVE DEVICE Silicon RF Power Semiconductors OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD00HHS1 Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.
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RD00HHS1
30MHz
RD00HHS1
30MHz
transistor t06
RD00HHS1-101
lal04na1r0
t06 TRANSISTOR
LAL04NAR39
TRANSISTOR 7533 A
LAL04NA
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RD 15 hf mitsubishi
Abstract: TRANSISTOR 7533 A RD00HHS1-101
Text: < Silicon RF Power MOS FET Discrete > RD00HHS1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W DESCRIPTION OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications. 4.4+/-0.1 TYPE NAME High power gain
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RD00HHS1
30MHz
RD00HHS1
30MHz
RD00HHS1-101
Oct2011
RD 15 hf mitsubishi
TRANSISTOR 7533 A
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rd01mus1 applications
Abstract: RD01MUS1-101 3M Touch Systems
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
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RD01MUS1
520MHz
RD01MUS1
RD01MUS1-101
rd01mus1 applications
3M Touch Systems
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japan 0105
Abstract: No abstract text available
Text: TCP DIMENSIONS ITC P Standard (l)Structure l.OMAX 0.1 6 A A expansion Sketch of cross section Structural specification Name 1 Basefilm body 2 Conductive Plating 3 Sealing Material 4 Bump / (Note) 1)*S ize indicates resin thickness included 2)T ape rolling length is 20m long
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35mmWIDE
70mmWIDE
330X23W
330x77w
343X336X50
343X336X85
440X480X0
japan 0105
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1981-R
Abstract: No abstract text available
Text: TCP D I M ENS I O IMS 6. TCP Standard D ^ £|L-eJ^s&ug_skslch_^=ccgai;je£Us& Note) 1) * Size indicates resin thickness included 2) Tape is used Kith 35 m width vide type 3) Tape rolling length is 20a long 1 2 Naie Basefil* jjjndyctive body 3 4 Buip Sealing Material
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75MAX
330x23"
343x336x50
440x480x0
1981-R
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1981-R
Abstract: No abstract text available
Text: TCP DIMENSIONS 6. TCP Standard Í )— •- m m jiW LSI chip /////¿U¿üMuuwu¿a¿/. *-A »iman«inii flltatrh n f r .r iw s a r t i nn / 3 Note) 1) * Size indicatea resin thickness included 2 ) Tape ia used with 35 m* width wide type 3) Tape rolling length is 20i long
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75MAX
330x23'
343x336x50
440x480x0
1981-R
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Untitled
Abstract: No abstract text available
Text: TCP DIMENSIONS 1.981 6. TCP Standard ( 1 ) S tru c tu re P attern effective a re a : 1 : w 1- - ^ - D within 60.0 S tructural specification N ame A-A expansion sketch o f cross section Note) 1) * Size indicates resin thickness included 2) T ape is used with 35m m width w ide type
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20tfm
330x23w
343x336x50
440x480x0
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lcd cross reference
Abstract: NJU6406B 1000H 100CC QFP-100
Text: TCP MOUNTED LCD DRIVER 1. General Description 1 Preface TC P ( Tape Carrier Package ) mount a LSI chip on thethin polyimide fiImdirectly. It applies to the small size LCD for communication equipment, pager and other handheld equipment which having a LCD
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1000H
30min
30min
100cycles
100CC
10cycles
lcd cross reference
NJU6406B
1000H
QFP-100
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lcd cross reference
Abstract: "LCD DRIVER"
Text: TCP 1. MOUNTED LCD DRIVER General Description 1 Preface TCP( Tape Carrier Package) mount a LSI chip on the thin polyiraide fi Im directly. It applies to the small size LCD for communication equipment, pager and other handheld equipment which having a LCD display for its feature of flexible shape, smallness and
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lcd cross reference
Abstract: No abstract text available
Text: TCP 1. MOUNTED LCD DRIVER General Description 1 Preface TCP( Tape Carrier Package) mount a LSI chip on thethin polyimide fiIndirectly. It applies to the small size LCD for communication equipment, pager and other handheld equipment which having a LCD display for its feature of flexible shape, smallness and
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lcd cross reference
Abstract: SN 102 lcd DE 113 LCD 1000H 100CC NJU6406B NJU6408B NJU6460A QFP-100 NJU6432
Text: TCP MOUNTED LCD DRIVER 1. General Description 1 Preface TC P ( Tape Carrier Package ) mount a LSI chip on thethin polyimide fiImdirectly. It applies to the small size LCD for communication equipment, pager and other handheld equipment which having a LCD
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lcd cross reference
Abstract: LCD heat seal connectors MIL-STD-883J CH85 6452A 1000H NJU6406B NJU6460A QFP-100 10-CHARACTER
Text: TCP 1. MOUNTED LCD DRIVER General Description 1 Preface TCP( Tape Carrier Package ) mount a LSI chip on thethin polyinide fiIndirectly. It applies to the small size LCD for communication equipment, pager and other handheld equipment which having a LCD display for its feature of flexible shape, smallness and
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EN60252
Abstract: capacitor MKP C.24 arcotronics mkp C 4a En 60252 400-VAC arcotronics mkp arcotronics motor capacitor CAPACITOR 60252 EN 60252 mkp 400VAC
Text: CAPACITORS FOR MOTOR APPLICATIONS C 24/4 Series Typical applications: The capacitor is used in series to the auxiliary winding of a single-phase electric motor, allowing it to start and increase its torque while working. The ca pacitor is particularly suitable fo r applications requiring
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