Contextual Info: ESAB85M-009I5A ' >3' yh+— K • i W ' t i i : Outline Drawings SCHOTTKY BARRIER DIODE : Features In su la ted package by fu lly m o ld in g . • te V P Lo w V F ■ M £ * 7 C Connection Diagram S u p e r h ig h speed s w itc h in g . • T V - - * — ttf f jC lJ S S fB ilS te

esab85m

Contextual Info: ESAB85M-009 5A (90V / 5A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 10.5 Max. 4.5Max. Ø3.2+0.2 -0.1 6.0 Min. 3.7 17.0±0.3 4.7 2.0 13.0 1.2 0.4 0.8 2.7 2.54 5.08 Features JEDEC Insulated package by fully molding Low VF EIAJ Super high speed switching

ESAB85M-009

Abstract: A404
Contextual Info: ESAB85M-009<5 a> ' > 3 • : Outline D raw ings SCHOTTKY BARRIER DIODE Features Insulated package by fully m o ld in g . •1 & V F m n m & rn C onnection Diagram Low V F Super high speed sw itchin g. High reliability by planer design. ' Applications High speed pow er sw itchin g.

ESAB85M-009

Contextual Info: ESAB85M-009 5A - > : Outline Drawings 3 SCHOTTKY BARRIER DIODE Features Insulated package by fully m o ld in g . • te V f Low V F Connection Diagram Super high speed sw itch in g . • T V -* -ftfijlC J S S fffilg tt High reliability by planer design. ' Applications

ESAB85M-009

Contextual Info: ESAB85M-009<5 a> ' > 3 • : Outline D raw ings SCHOTTKY BARRIER DIODE Features Insulated package by fully m o ld in g . •1 & V F m n m & rn C onnection Diagram Low V F Super high speed sw itchin g. High reliability by planer design. ' Applications High speed pow er sw itchin g.

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

SE024

Abstract: ERB12 ESAD81-004 se014 ERA1506 ERB30 ESAB82M-006 esac6 ERD03-04 SE036
Contextual Info: COLLMER SEMICONDUCTOR INC MÖE D me, dddisôi Schottky/General Purpose Diodes " P ICOL <S o \ ~ \ J > Schottky “Quick Reference” Selection Guide PACKAGE SURFACE MOUNT S I N G L E AXIAL TO-220 TO-3P F-PACK Full Mold Package PACKAGE SURFACE MOUNT D U A

EA40QC03

Abstract: EA40QC04 EA40QC05 EA40QC05-F EA40QC06-F EA40QC09 EA40QC09-F EA40QC10 EA40QC10-F EA60QC03
Contextual Info: OOOOO E A 21 FC 4 -F EA 40Q C 03 E A 4 0 Q C 0 3 -F EA 40Q C 04 E A 4 0 Q C 0 4 -F C SO > »»U EA40QC0 5 E A 4 0 Q C 0 5 -F EA 40Q C 06 EA 40 Q C 0 6 —F EA40Q C09 o o o o o M N ifc M O O O O O o o o o o E A 4 0 Q C 0 9 -F EA 40Q C 10 EA 40 Q C 1 0 —F

ESAB82-004

Abstract: ESAB82M-004 ESAB82M-006 ESAB85-009 KP823C04 KS823C04 TP801C04 TP801C06 YG801C04 YG801C06
Contextual Info: Schottky-Barrier Diodes Dual package Ratings and characteristics Type M axim um ratin§ V lo rrm Volts KS823C04 40 KP823C04 40 40 If s h # 2 *1 Am ps. Am ps. 5.0 Tc=87°C 5.0 Tc=87°C) 5.0 Tc=103°C) Therm al rating Tj and Tstg °c -40 t o +125 Characteristics Ta=25°C)

EA40QC03

Abstract: EA40QC04 EA40QC05 EA40QC05-F EA40QC06-F EA40QC09 EA40QC09-F EA40QC10 EA40QC10-F EA60QC03
Contextual Info: OOOOO E A 21 FC 4 -F EA 40Q C 03 E A 4 0 Q C 0 3 -F EA 40Q C 04 E A 4 0 Q C 0 4 -F C SO > »»U EA40QC0 5 E A 4 0 Q C 0 5 -F EA 40Q C 06 EA 40 Q C 0 6 —F EA40Q C09 o o o o o M N ifc M O O O O O o o o o o E A 4 0 Q C 0 9 -F EA 40Q C 10 EA 40 Q C 1 0 —F

ERC24-06

Abstract: ERA21-06 ERA18 era-84 ERA15-04 ESAD75-02 ERC24-04
Contextual Info: V -V F U J I M IN I AXIAI. DIODI? S E R IE S T PLAN General purpose D iode T Y P lì -~ FRD FRD SOD Low loss FRD FRD FRD ZENER n FRA15-01 ERA15-02 ERA15-04 MM 15-06 ERA15-08 ERA15-10 BRA-18-02 ERA48-04 100 V 200 200 400 EIÏA22-02 ERA22-04 ERA22-0G ERA22-08

ET412

Abstract: 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082
Contextual Info: / Discontinued Types 9. S! Descciptien / ' f ' 7 - MOSFET Power MOFET O w c o n t& n je d ty p e ItW B S W P Â R e p la c a d typ e 2SK1009 2SK1010 2SK1011 2SK1012 2SK1015 2SK2871 2SK2875 2SK2639 2SK2641 2SK2755 2SK1016 2SK1023 2SK1024 2SK1082 2SK2643 2SK2646

ESAD81

Abstract: ESAC6 erb12 ESAD81-004 era-84 SCHOTTKY -004
Contextual Info: SCHOTTKY & GENERAL PURPOSE DIODES Schottky “Quick Reference” Selection Guide PACKAGE 45 VOLT Part Number lo A Pkg. M OUNT SC802-04 1 20 AXIAL ERA82-004 ERA83-004 E R A 8 1-004 ERB81 -004 ERB83-004 ERC81 -004 ERC81S-004 0.6 1 1 2 2 3 5 TO -220 ERC80-004

Contextual Info: Schottky-Barrier Diodes Dual package Ratings and characteristics Maximum rating Vrrm lo *1 TS802C06 TS802C09 TP802C04 TP802C06 TP802C09 ESAC82-004 ESAC82M-004 O II CO ^1 5.0 Mass Grams Fig. No. Irrm * 3 Max. mA Dimensions -40 t o +125 0.55 If=2.5A 5.0 0.6

EA40QC03

Abstract: EA40QC04 EA40QC05 EA40QC05-F EA40QC06-F EA40QC09 EA40QC09-F EA40QC10 EA40QC10-F EA60QC03
Contextual Info: OOOOO E A 21 FC 4 -F EA 40Q C 03 E A 4 0 Q C 0 3 -F EA 40Q C 04 E A 4 0 Q C 0 4 -F C SO > »»U EA40QC0 5 E A 4 0 Q C 0 5 -F EA 40Q C 06 EA 40 Q C 0 6 —F EA40Q C09 o o o o o M N ifc M O O O O O o o o o o E A 4 0 Q C 0 9 -F EA 40Q C 10 EA 40 Q C 1 0 —F

erc24-06

Abstract: ERB06-15 ERC47-02 ERA91-02 erc24 ERC2406 ESAD81-004 ERA18-02 ERB29-04 ERC24-04
Contextual Info: This Material Copyrighted By Its Respective Manufacturer Fast R eco very D iodes S ingle psckage • 223ñ7^2 0001271 s ■ r-oh-oi collmer semiconductor inc ese » Ratings and characteristics Thermal ratings Ifsm * 2 Tj and Tstg Amps. •c Characteristics Te1 = 25 -0

EA40QC03

Abstract: EA40QC04 EA40QC05 EA40QC05-F EA40QC06-F EA40QC09 EA40QC09-F EA40QC10 EA40QC10-F EA60QC03
Contextual Info: OOOOO E A 21 FC 4 -F EA 40Q C 03 E A 4 0 Q C 0 3 -F EA 40Q C 04 E A 4 0 Q C 0 4 -F C SO > »»U EA40QC0 5 E A 4 0 Q C 0 5 -F EA 40Q C 06 EA 40 Q C 0 6 —F EA40Q C09 o o o o o M N ifc M O O O O O o o o o o E A 4 0 Q C 0 9 -F EA 40Q C 10 EA 40 Q C 1 0 —F

EA40QC03

Abstract: EA40QC04 EA40QC05 EA40QC05-F EA40QC06-F EA40QC09 EA40QC09-F EA40QC10 EA40QC10-F EA60QC03
Contextual Info: OOOOO E A 21 FC 4 -F EA 40Q C 03 E A 4 0 Q C 0 3 -F EA 40Q C 04 E A 4 0 Q C 0 4 -F C SO > »»U EA40QC0 5 E A 4 0 Q C 0 5 -F EA 40Q C 06 EA 40 Q C 0 6 —F EA40Q C09 o o o o o M N ifc M O O O O O o o o o o E A 4 0 Q C 0 9 -F EA 40Q C 10 EA 40 Q C 1 0 —F

LT GBL406

Abstract: SMBJ8.5CA 2KBP206 TS820-800T LT KBJ608G T1M5F600A 31DQ100 30BQ050 BYM95C SB0100
Contextual Info: SEMICONDUCTOR LITEON LITE-ON Cross Reference Competitor P/N 1.5CE10 1.5CE100 1.5CE100A 1.5CE100C 1.5CE100CA 1.5CE10A 1.5CE10C 1.5CE10CA 1.5CE11 1.5CE110 1.5CE110A 1.5CE110C 1.5CE110CA 1.5CE11A 1.5CE11C 1.5CE11CA 1.5CE12 1.5CE120 1.5CE120A 1.5CE120C 1.5CE120CA

SE024

Contextual Info: C O L L ME R S E M I C O N D U C T O R INC MAE D 22367*12 D D O I SÔ I 74fl « C O L Schottky/General Purpose Diodes € " P o\~\J> Schottky “Quick Reference” Selection Guide PACKAGE S I N G L E lo A Pkg. SURFACE MOUNT SE014 SC802-04 1 1 AXIAL ERA82-004