hd 5888
Abstract: No abstract text available
Text: SGNE090MK High Voltage - High Power GaN-HEMT FEATURES - High Voltage Operation : VDS=50V - High Power : 51.0dBm typ. @ Psat - High Efficiency: 70%(typ.) @ Psat - Linear Gain : 20.0dB(typ.) @ f=0.9GHz - Proven Reliability DESCRIPTION SEDI’s GaN-HEMT offers high efficiency, ease of matching, greater
|
Original
|
SGNE090MK
hd 5888
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SGNE010MK High Voltage - High Power GaN-HEMT FEATURES - High Voltage Operation : VDS=50V - High Power : 40.5dBm typ. @ Psat - High Efficiency: 55%(typ.) @ Psat - Linear Gain : 16.0dB(typ.) @ f=3.5GHz - Proven Reliability DESCRIPTION SEDI’s GaN-HEMT offers high efficiency, ease of matching, greater
|
Original
|
SGNE010MK
|
PDF
|
EEPROM
Abstract: M24M01-HR 12943 M24XXX M24M01-R AEC-Q100-002 J-STD-020D M24M01-W M24M01-H
Text: M24M01-HR M24M01-R, M24M01-W 1 Mbit serial I²C bus EEPROM Features • Compatible with all I2C bus modes: – 1 MHz Fast-mode Plus – 400 kHz Fast mode – 100 kHz Standard mode SO8 MN 150 mils width ■ Memory array: – 1 Mb (128 Kbytes) of EEPROM – Page size: 256 bytes
|
Original
|
M24M01-HR
M24M01-R,
M24M01-W
40-year
EEPROM
M24M01-HR
12943
M24XXX
M24M01-R
AEC-Q100-002
J-STD-020D
M24M01-W
M24M01-H
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SGNE070MK High Voltage - High Power GaN-HEMT FEATURES - High Voltage Operation : VDS=50V - High Power : 49.5dBm typ. @ Psat - High Efficiency: 70%(typ.) @ Psat - Linear Gain : 21.0dB(typ.) @ f=0.9GHz - Proven Reliability DESCRIPTION SEDI’s GaN-HEMT offers high efficiency, ease of matching, greater
|
Original
|
SGNE070MK
Rating92
|
PDF
|
HD 5888
Abstract: No abstract text available
Text: SGNE090MK High Voltage - High Power GaN-HEMT FEATURES - High Voltage Operation : VDS=50V - High Power : 51.0dBm typ. @ Psat - High Efficiency: 70%(typ.) @ Psat - Linear Gain : 20.0dB(typ.) @ f=0.9GHz - Proven Reliability DESCRIPTION SEDI’s GaN-HEMT offers high efficiency, ease of matching, greater
|
Original
|
SGNE090MK
HD 5888
|
PDF
|
emergency lighting 230v circuit diagram
Abstract: SF263 ESC425S led 230v application circuit diagram of 230v 50hz ac input 230v 50hz
Text: Control & Indication catalogue 15 Control & indication Switches, contactors, relays, push buttons & emergency lighting This section provides a selection of Isolating, changeover and selector switches, push buttons, indicator lights, delay timers, emergency lighting test packages, DIN socket outlets and contactors that
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: EGN21C105I2D High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency
|
Original
|
EGN21C105I2D
14GHz
14GHz
25deg
/-10MHz
45dBm
|
PDF
|
EGN26C070I2D
Abstract: No abstract text available
Text: EGN26C070I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 48.8dBm typ. @ Psat High Efficiency: 70%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater
|
Original
|
EGN26C070I2D
25deg
/-10MHz
EGN26C070I2D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SGN27C160I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 52.5dBm typ. @ Psat High Efficiency: 65%(typ.) @ Psat Power Gain : 16.3dB(typ.) @ f=2.655GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
|
Original
|
SGN27C160I2D
655GHz
25deg
|
PDF
|
Untitled
Abstract: No abstract text available
Text: EGN21C320IV High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 55.0dBm typ. @ Psat -High Efficiency: 65%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency
|
Original
|
EGN21C320IV
14GHz
14GHz
25deg
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SGNE045MK High Voltage - High Power GaN-HEMT FEATURES - High Voltage Operation : VDS=50V - High Power : 47.5dBm typ. @ Psat - High Efficiency: 55%(typ.) @ Psat - Linear Gain : 16.0dB(typ.) @ f=2.2GHz - Proven Reliability DESCRIPTION SEDI’s GaN-HEMT offers high efficiency, ease of matching, greater
|
Original
|
SGNE045MK
|
PDF
|
MTTF
Abstract: 60Ghz GaN amplifier 160W JESD22-A114 EGN26C160I2D
Text: EGN26C160I2D GaN-HEMT 160W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 52.5dBm typ. @ Psat ・High Efficiency: 65%(typ.) @ Psat ・Power Gain : 16dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
|
Original
|
EGN26C160I2D
Gate-Sourc05
MTTF
60Ghz
GaN amplifier 160W
JESD22-A114
EGN26C160I2D
|
PDF
|
egnb045mk
Abstract: JESD22-A114
Text: EGNB045MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 47.5dBm typ. @ P3dB ・High Efficiency: 60%(typ.) @ P3dB ・Linear Gain : 13dB(typ.) @ f=2.2GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
|
Original
|
EGNB045MK
egnb045mk
JESD22-A114
|
PDF
|
EGN26C030MK
Abstract: 60Ghz JESD22-A114
Text: EGN26C030MK GaN-HEMT 30W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 45.0dBm typ. @ Psat ・Power Gain : 18dB(typ.) @ f=2.60GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
|
Original
|
EGN26C030MK
60GHz
EGN26C030MK
60Ghz
JESD22-A114
|
PDF
|
|
|
EGN16C105MK
Abstract: 105w JESD22-A114
Text: EGN16C105MK GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 50.5dBm typ. @ Psat ・High Efficiency: 65%(typ.) @ Psat ・Power Gain :19dB(typ.) @ f=1.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
|
Original
|
EGN16C105MK
Total154
EGN16C105MK
105w
JESD22-A114
|
PDF
|
EGN21C070MK
Abstract: JESD22-A114
Text: EGN21C070MK GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 49.5dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 17.0dB(typ.) @ f=2.14GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
|
Original
|
EGN21C070MK
14GHz
JESD22-A114)
JEIA/ESD22-A115)
EGN21C070MK
JESD22-A114
|
PDF
|
EGN26C030MK
Abstract: No abstract text available
Text: EGN26C030MK GaN-HEMT 30W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 45.0dBm typ. @ Psat ・Power Gain : 18dB(typ.) @ f=2.60GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
|
Original
|
60GHz
EGN26C030MK
-j100
EGN26C030MK
|
PDF
|
EGNC105MK
Abstract: No abstract text available
Text: EGNC105MK GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 51dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Linear Gain : 20dB(typ.) @ f=0.9GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
|
Original
|
51dBm
EGNC105MK
-j100
EGNC105MK
|
PDF
|
EUDYNA
Abstract: No abstract text available
Text: EGNB070MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 49.5dBm typ. @ P3dB ・High Efficiency: 70%(typ.) @ P3dB ・Linear Gain : 18dB(typ.) @ f=0.9GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
|
Original
|
EGNB070MK
-j100
EUDYNA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: EGNB045MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 47.5dBm typ. @ P3dB ・High Efficiency: 60%(typ.) @ P3dB ・Linear Gain : 13dB(typ.) @ f=2.2GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
|
Original
|
EGNB045MK
|
PDF
|
B4846
Abstract: S21 Package GRM188B11H102KA01D CS3376C
Text: EGN21C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
|
Original
|
14GHz
EGN21C105I2D
/-10MHz
45dBm
/-10MHz
B4846
S21 Package
GRM188B11H102KA01D
CS3376C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: EGN35C030MK GaN-HEMT 30W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 45.0dBm typ. @ Psat Power Gain : 16.5dB(typ.) @ f=3.5GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
|
Original
|
EGN35C030MK
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 24 23 21 22 19 20 17 IB 16 15 14 12 13 10 11 V 7 8 MISSING SYMBOLS SYMBOL DEFINITION A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON THE INDIVIDUAL COMPONENT DRAWING. 2.4 M -— 1 .2 TOTAL NO OF INSPECTIONS
|
OCR Scan
|
26JN02
PM002191
|
PDF
|
transistor irf 649
Abstract: 8 GHz VCO TCXO 10 MHz philips IRf 652 irf 3740 irf 536
Text: IN TE G R A TE D CIRCUITS [nlEET UMA1021 AM Low-voltage frequency synthesizer for radio telephones P relim inary specification File under Integrated C ircuits, IC17 Philips Semiconductors 1998 M ar 03 PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification
|
OCR Scan
|
UMA1021
435io2/i2oo/oi/P
transistor irf 649
8 GHz VCO
TCXO 10 MHz philips
IRf 652
irf 3740
irf 536
|
PDF
|
