Untitled
Abstract: No abstract text available
Text: eSE Series APPLICATION NOTES eSE/eST IDE Updated to V1.7 Notes Document Number : Date of Issue : Issue Version : Supported Chips : Applicable Software : AP-eSE-0005E-V2 20 June 2007 2 eST003~ eST341, eSE003 ~ eSE080 eSTE IDE, version 1.7 1.0 eST/eSE Serial IDE Update to V1.7
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AP-eSE-0005E-V2
eST003~
eST341,
eSE003
eSE080
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mouse wheel
Abstract: No abstract text available
Text: eSTE Series APPLICATION NOTES eST/eSE eST/eSE IDE Updated to V2.0 V2.0 Notes Document Number : Date of Issue : Issue Version : Supported Chips : Applicable Software : AP-eSTE-0005E-V5 12 May 2010 5 eST003~ eST341, eSE003 ~ eSE080 eSTE IDE, version 2.0 1.0 eST/eSE Serial IDE Update to V2.0
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AP-eSTE-0005E-V5
eST003~
eST341,
eSE003
eSE080
Setupv20
lieSTE-0005E-V5
mouse wheel
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DQU12
Abstract: No abstract text available
Text: MR0A16A FEATURES 64K x 16 MRAM Memory • 3.3 Volt power supply • Fast 35ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Commercial, Industrial, and Extended Temperatures
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MR0A16A
44-pinâ
48-ballâ
1-877-347-MRAMâ
EST00354
MR0A16A
080512a
DQU12
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Untitled
Abstract: No abstract text available
Text: MR4A08B FEATURES 2M x 8 MRAM Memory • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP2 packages
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MR4A08B
20-years
AEC-Q100
MR4A08B
216-bit
EST00356
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MR0D08B
Abstract: No abstract text available
Text: MR0D08B Dual Supply 128K x 8 MRAM FEATURES • +3.3 Volt power supply • I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces • Fast 45 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature
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MR0D08B
20-years
MR0D08B
576-bit
45nspenses,
EST00370
MR0D08B,
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Untitled
Abstract: No abstract text available
Text: MR0A16A FEATURES 64K x 16 MRAM Memory • + 3.3 Volt power supply • Fast 35ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Commercial, Industrial, Extended Temperatures • Data always non-volatile for >20-years at temperature
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MR0A16A
20-years
MR0A16A
576-bit
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Untitled
Abstract: No abstract text available
Text: MR25H10 FEATURES 1Mb Serial SPI MRAM • No write delays • Unlimited write endurance • Data retention greater than 20 years • Automatic data protection on power loss • Block write protection • Fast, simple SPI interface with up to 40 MHz clock rate
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MR25H10
AEC-Q100
MR25H10
576-bit
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Untitled
Abstract: No abstract text available
Text: MR0A16A FEATURES • • • • • • • • • 64K x 16 MRAM Memory 3.3 Volt power supply Fast 35ns read/write cycle SRAM compatible timing Unlimited read & write endurance Commercial, Industrial, and Extended Temperatures
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MR0A16A
AEC-Q100
44-pin
48-ball
1-877-347-MRAM
EST00354
MR0A16A
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Untitled
Abstract: No abstract text available
Text: MR4A16B 1M x 16 MRAM FEATURES • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20 years at temperature • RoHS-compliant small footprint BGA and TSOP2 package
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MR4A16B
AEC-Q100
MR4A16B
216-bit
EST00352
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ese040
Abstract: eST040 9944 ir receiver eST010 EST030 eST020 npn 8050 EM55000-2 EST081 eST003
Text: eST/eSE Series INTEGRATED DEVELOPMENT ENVIRONMENT USER’S GUIDE Doc. Version 1.4 Applicable to eST/eSE IDE Version 1.4 & later ELAN MICROELECTRONICS CORP. August 2009 Trademark Acknowledgments IBM is a registered trademark and PS/2 is a trademark of IBM.
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footprint jedec Mo-119
Abstract: MR256A08BCMA35R
Text: MR256A08B FEATURES 32K x 8 MRAM • 3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Native non-volatility • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • Commercial and industrial temperatures
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MR256A08B
20-years
MR256A08B
144-bit
EST00355
EST355
footprint jedec Mo-119
MR256A08BCMA35R
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MR25H10CDC
Abstract: mr25h10mdc MR25H10 AEC-Q100 dfn tray 5 mm x 6 mm
Text: MR25H10 FEATURES 1Mb Serial SPI MRAM • No write delays • Unlimited write endurance • Data retention greater than 20 years • Automatic data protection on power loss • Block write protection • Fast, simple SPI interface with up to 40 MHz clock rate
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MR25H10
AEC-Q100
MR25H10
576-bit
MR25H10CDC
mr25h10mdc
dfn tray 5 mm x 6 mm
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aec-q100 package
Abstract: MR4A16BCYS35R
Text: MR4A16B 1M x 16 MRAM FEATURES • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20 years at temperature • RoHS-compliant small footprint BGA and TSOP2 package
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MR4A16B
AEC-Q100
MR4A16B
216-bit
1-877-347-MRAM
EST00352
aec-q100 package
MR4A16BCYS35R
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Untitled
Abstract: No abstract text available
Text: MR4A16B 1M x 16 MRAM FEATURES • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20 years at temperature • RoHS-compliant small footprint BGA and TSOP2 package
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MR4A16B
AEC-Q100
MR4A16B
216-bit
EST00352
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eSTM060
Abstract: EM55450 em55 RM EMK EM55M450 EM55Q450 EM73MA89B Q060 EM55300
Text: MTP Writer System for EM55M450/Q450 eSTM060/Q060 EM73MA89B EM55M300 USER’S GUIDE Applicable to MTP Writer Driver Version 3.5 & later Doc. Version V1.2 ELAN MICROELECTRONICS CORP. January 2005 Trademark Acknowledgments IBM is a registered trademark and PS/2 is a trademark of IBM.
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EM55M450/Q450
eSTM060/Q060
EM73MA89B
EM55M300
Win2000
Win2000,
PORT95NT
eSTM060
EM55450
em55
RM EMK
EM55M450
EM55Q450
EM73MA89B
Q060
EM55300
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BGA Package 0.35mm pitch
Abstract: 48BGA MR4A16B
Text: MR4A16B 1M x 16 MRAM FEATURES • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20 years at temperature • RoHS-compliant small footprint BGA and TSOP2 package
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MR4A16B
AEC-Q100
MR4A16B
216-bit
EST00352
BGA Package 0.35mm pitch
48BGA
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MR4A16BCYS35
Abstract: No abstract text available
Text: MR4A16B 1M x 16 MRAM FEATURES • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20 years at temperature • RoHS-compliant small footprint BGA and TSOP2 package
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MR4A16B
MR4A16B
216-bit
MR4A16BCYS35
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eST010
Abstract: eST020 eST003 eST251 eSTM060 EST081 eST040 eSTM060H QFP44 eST171
Text: EASY SOUND eST Series Tiny Controller-Based Speech Synthesizer Product Specification DOC. VERSION 1.2 ELAN MICROELECTRONICS CORP. December 2005 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation.
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Untitled
Abstract: No abstract text available
Text: MR4A16B FEATURES 1M x 16 MRAM • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP package
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MR4A16B
20-years
MR4A16B
216-bit
20-years.
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MR4A08B
Abstract: BGA Solder Ball 0.35mm MR4A08BC MR4A08BM
Text: MR4A08B FEATURES 2M x 8 MRAM Memory • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP package
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MR4A08B
20-years
MR4A08B
216-bit
20-years.
BGA Solder Ball 0.35mm
MR4A08BC
MR4A08BM
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Untitled
Abstract: No abstract text available
Text: MR0D08B Dual Supply 128K x 8 MRAM FEATURES • +3.3 Volt power supply • I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces • Fast 45 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature
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MR0D08B
20-years
MR0D08B
576-bit
45nsion,
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footprint jedec Mo-119
Abstract: fBGA package tray
Text: MR256A08B FEATURES 32K x 8 MRAM • 3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Native non-volatility • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • Commercial and industrial temperatures
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MR256A08B
20-years
MR256A08B
144-bit
EST00355
EST355
footprint jedec Mo-119
fBGA package tray
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M25H1
Abstract: Everspin Technologies
Text: MR25H10 FEATURES 1Mb Serial SPI MRAM • No write delays • Unlimited write endurance • Data retention greater than 20 years • Automatic data protection on power loss • Block write protection • Fast, simple SPI interface with up to 40 MHz clock rate
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MR25H10
AEC-Q100
MR25H10
576-bit
M25H1
Everspin Technologies
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Untitled
Abstract: No abstract text available
Text: MR4A08B FEATURES 2M x 8 MRAM Memory • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP2 packages
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Original
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MR4A08B
20-years
MR4A08B
216-bit
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