EST00356 Search Results

EST00356 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: MR4A08B FEATURES 2M x 8 MRAM Memory • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP2 packages	Original	MR4A08B 20-years AEC-Q100 MR4A08B 216-bit EST00356	PDF
Untitled Abstract: No abstract text available Text: MR4A08B FEATURES 2M x 8 MRAM Memory • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP2 packages	Original	MR4A08B 20-years MR4A08B 216-bit	PDF
Untitled Abstract: No abstract text available Text: MR4A08B FEATURES 2M x 8 MRAM Memory • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP2 packages	Original	MR4A08B 20-years AEC-Q100 MR4A08B 216-bit EST00356	PDF
MR4A08BMYS35 Abstract: No abstract text available Text: MR4A08B FEATURES 2M x 8 MRAM Memory • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP2 packages	Original	MR4A08B 20-years AEC-Q100 MR4A08B 216-bit EST00356 MR4A08BMYS35	PDF