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    Untitled

    Abstract: No abstract text available
    Text: MR4A08B FEATURES 2M x 8 MRAM Memory • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP2 packages


    Original     		PDF MR4A08B 20-years AEC-Q100 MR4A08B 216-bit EST00356

    Untitled

    Abstract: No abstract text available
    Text: MR4A08B FEATURES 2M x 8 MRAM Memory • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP2 packages


    Original     		PDF MR4A08B 20-years MR4A08B 216-bit

    Untitled

    Abstract: No abstract text available
    Text: MR4A08B FEATURES 2M x 8 MRAM Memory • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP2 packages


    Original     		PDF MR4A08B 20-years AEC-Q100 MR4A08B 216-bit EST00356

    MR4A08BMYS35

    Abstract: No abstract text available
    Text: MR4A08B FEATURES 2M x 8 MRAM Memory • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP2 packages


    Original     		PDF MR4A08B 20-years AEC-Q100 MR4A08B 216-bit EST00356 MR4A08BMYS35