Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    EUDYNA FET Search Results

    EUDYNA FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJF0411JPD-00#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0411JPD-01#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0605JPV-00#Q7 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    ISL95901IRZ-T Renesas Electronics Corporation Integrated FET Regulators Visit Renesas Electronics Corporation
    ISL6146DFRZ Renesas Electronics Corporation Low Voltage ORing FET Controller Visit Renesas Electronics Corporation

    EUDYNA FET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: ELM5964 ELM5964-16F C-Band Band Internally Matched FET FEATURES  High Output Power: P1dB=42.5dBm 42.5dBm Typ (  High Gain: G1dB=10.0dB (Typ.)  High PAE: add=40 %( Typ.)  Frequency Band: 5.9~6.4GHz  Impedance Matched Zin/Zout = 50 50


    Original     		ELM5964 ELM5964-16F ELM5964-16F PDF

    L-Band

    Abstract: No abstract text available
    Text: FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 40.0dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to


    Original     		FLL120MK FLL120MK L-Band PDF

    C-Band Power GaAs FET

    Abstract: No abstract text available
    Text: FLC257MH-6 C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 34.0dBm Typ. High Gain: G1dB = 9.0dB(Typ.) High PAE: ηadd = 36%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC257MH-6 is a power GaAs FET that is designed for general


    Original     		FLC257MH-6 FLC257MH-6 C-Band Power GaAs FET PDF

    FLK057WG

    Abstract: No abstract text available
    Text: FLK057WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK057WG is a power GaAs FET that is designed for general


    Original     		FLK057WG FLK057WG PDF

    EUDYNA

    Abstract: No abstract text available
    Text: FLU17XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=32.5dBm Typ. • High Gain: G1dB=13.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the


    Original     		FLU17XM FLU17XM EUDYNA PDF

    Untitled

    Abstract: No abstract text available
    Text: FLC157XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 31.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 29.5%(Typ.) Proven Reliability Drain DESCRIPTION Drain Gate The FLC157XP chip is a power GaAs FET that is designed for


    Original     		FLC157XP FLC157XP PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM3742-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 10.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM3742-18F -46dBc FLM3742-18F PDF

    FLU35XM

    Abstract: Eudyna Devices
    Text: FLU35XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=35.5dBm Typ. • High Gain: G1dB=12.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU35XM is a GaAs FET designed for base station applications in the


    Original     		FLU35XM FLU35XM V4888 Eudyna Devices PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM1213-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: ηadd = 27% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM1213-6F -45dBc 25dBm FLM1213-6F PDF

    FLL57MK

    Abstract: No abstract text available
    Text: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to


    Original     		FLL57MK FLL57MK PDF

    DSA00207231

    Abstract: No abstract text available
    Text: FLM3135-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm Typ. High Gain: G1dB = 12.0dB (Typ.) High PAE: ηadd = 38% (Typ.) Low IM3 = -45dBc@Po = 25.5dBm Broad Band: 3.1 ~ 3.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM3135-4F -45dBc FLM3135-4F 25hods DSA00207231 PDF

    Untitled

    Abstract: No abstract text available
    Text: FLK017WF X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK017WF is a power GaAs FET that is designed for general


    Original     		FLK017WF FLK017WF PDF

    Untitled

    Abstract: No abstract text available
    Text: FLC317MG-4 C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 34.8dBm Typ. High Gain: G1dB = 9.5dB(Typ.) High PAE: ηadd = 37%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC317MG-4 is a power GaAs FET that is designed for


    Original     		FLC317MG-4 FLC317MG-4 PDF

    FLL177ME

    Abstract: Eudyna Devices 0.1 j100
    Text: FLL177ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=32.5dBm Typ. High Gain: G1dB=12.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL177ME is a Power GaAs FET that is specifically designed to


    Original     		FLL177ME FLL177ME Temperat4888 Eudyna Devices 0.1 j100 PDF

    GaAs FET HEMT Chips

    Abstract: FLC307XP C-Band Power GaAs FET HEMT Chips
    Text: FLC307XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 34.8dBm Typ. High Gain: G1dB = 9.5dB(Typ.) High PAE: ηadd = 37%(Typ.) Proven Reliability Drain DESCRIPTION Drain Drain Gate Gate Drain Gate Gate Source Source The FLC307XP chip is a power GaAs FET that is designed for


    Original     		FLC307XP FLC307XP Conditi4888 GaAs FET HEMT Chips C-Band Power GaAs FET HEMT Chips PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM3439-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.5dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 40% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm Broad Band: 3.4 ~ 3.9GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM3439-12F -46dBc FLM3439-12F PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM6472-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM6472-6F -46dBc FLM6472-6F PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM3439-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 10.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 3.4 ~ 3.9GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM3439-18F -46dBc FLM3439-18F PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM0910-4F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM0910-4F -46dBc FLM0910-4F PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM1414-4F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 27% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM1414-4F -46dBc FLM1414-4F PDF

    FLC087XP

    Abstract: No abstract text available
    Text: FLC087XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 28.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 31.5%(Typ.) Proven Reliability Drain DESCRIPTION The FLC087XP chip is a power GaAs FET that is designed for general


    Original     		FLC087XP FLC087XP PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM6472-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM6472-18F -46dBc FLM6472-18F PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM7179-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: ηadd = 38% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM7179-12F -46dBc FLM7179-12F PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM7785-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 34% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM7785-8F -46dBc FLM7785-8F PDF