IGD515EI
Abstract: IGBT Power Module siemens ag FS450R17KE3 FF400R17KE3 igbt 1200v 150a trench field stop ECONOPACK FF800R17KE3 FF300R17KE3 FZ3600R17KE3 FZ400R17KE3
Text: 1700V Trench IGBT Modules * R. Mallwitz, R. Tschirbs , M. Pfaffenlehner, A. Mauder (*) (*) (*) (*) , C. Schaeffer (*) eupec GmbH, Max-Planck Straße 5, D-59581 Warstein-Belecke Infineon Technologies AG, Balanstraße 73, D-81541 Munich Infineon Technologies AG, Siemensstraße 2, A-9500 Villach
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D-59581
D-81541
IGD515EI
IGBT Power Module siemens ag
FS450R17KE3
FF400R17KE3
igbt 1200v 150a trench field stop
ECONOPACK
FF800R17KE3
FF300R17KE3
FZ3600R17KE3
FZ400R17KE3
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eupec igbt 10kv
Abstract: Inverter Delta 6.5kV IGBT igbt 3.3kv eupec igbt 3.3kv EUPEC Thyristor 1200A Thyratron dc to ac inverter eupec igbt 6.5kV thyratron DIAGRAM thyristor inverter
Text: The new 6.5kV IGBT module: a reliable device for medium voltage applications Thomas Schuetze, Herman Berg, Oliver Schilling eupec GmbH Max-Planck-Straße 5 59581 Warstein Germany Tel.: +49 2902 764-1153 Fax: +49 2902 764-1150 thomas.schuetze@eupec.com In an effort to combine the advantages of modern high voltage IGBT chip and packaging technology
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EUPEC DD 105 N 16 L
Abstract: all type of thyristor EUPEC tt 162 n 16 EUPEC Thyristor thyristor tt 162 n EUPEC Thyristor TT thyristor tt 162 n 12 tt 162 n 16 module bsm 25 gp 120 Eupec bsm 25 gb 120
Text: IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 96 Type designations Presspacks IGBT Modules T 930 S 18 T M C T D A 930 1 4 6 7 8 9 3 thyristor diode asymmetric thyristor average on state current A standard ceramic disc high power ceramic disc
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diode F4
Abstract: IGBT f4 eupec igbt F4-400R12KS4 diode F4 11
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules F4-400R12KS4 B2 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage VCES 1200 V IC,nom.
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F4-400R12KS4
diode F4
IGBT f4
eupec igbt
diode F4 11
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eupec igbt
Abstract: IGBT f4 F4-400R12KS4
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules F4-400R12KS4 B2 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage VCES 1200 V IC,nom.
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F4-400R12KS4
eupec igbt
IGBT f4
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TCA 700 y
Abstract: BTS 7930 ICE1PS02 igbt eupec TDA16846 equivalent tda16846 TLE72xx ICE1PS01 tda16846 p tca 765
Text: ООО «ЭФО» ОФИЦИАЛЬНЫЙ ДИСТРИБЬЮТОР Infineon Technologies Силовые полупроводниковые компоненты Инфинеон от производителя №1 в мире w w w. i n f i n e o n . c o m
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SDB06S60
SDB02S60
SDB04S60
SDB05S60
SDB12S60
SDB08S60
SDB10S60
TCA 700 y
BTS 7930
ICE1PS02
igbt eupec
TDA16846 equivalent
tda16846
TLE72xx
ICE1PS01
tda16846 p
tca 765
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F4-400R12KS4
Abstract: eupec module igbt
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules F4-400R12KS4 B2 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage VCES 1200 V IC,nom.
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F4-400R12KS4
eupec module igbt
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FS300R16KF4
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FS 300 R 16 KF4 61,5 61,5 M6 13 190 171 57 2,8x0,5 U V CX CU CY W CV CZ CW 4 deep 3,35 5,5 26,4 7 5 3x5=15 GX EX EU GU GY EY EV GV + + Cu Cv Cw Gu Gv Gw Eu Ev Ew Cx Cy
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12KF4
Abstract: W0024
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1800 R 12 KF4 61,5 61,5 13 190 31,5 171 57 1 2 3 C M8 C C E M4 4 E E 4,0 deep C 2,5 deep E 7 G 6 5 8 20,25 28 7 41,25 M6 79,4 external connection to be done C C C E E E C G E external connection to
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eupec FF 600 R 12 KF1
Abstract: 75nF dc modul 47 GE DIODE 0270
Text: European Power Semiconductor and Electronics Company Marketing Information FF 400 R 33 KF1 55,2 11,85 130 31,5 114 1 3 2 E1 C2 C1 for M4 for M8 E2 3,5 deep C1 E2 G2 4 G1 E1 3,5 deep 5 6 C2 7 25,5 29,5 45 10 28 29,5 43 47 for M6 external connection to be done
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Eupec fz 1200 r 12
Abstract: vrm ic
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1800 R 12 KF4 61,5 61,5 13 190 31,5 171 57 1 2 3 C M8 C C E M4 4 E E 4,0 deep C 2,5 deep E 7 G 6 5 8 20,25 28 7 41,25 M6 79,4 external connection to be done C C C E E E C G E external connection to
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IGBT EUPEC FZ 1800 R
Abstract: IGBT FZ 1000 KF423 IGBT FZ 1800 fz 79 1500 eupec FZ 1800 G1 TRANSISTOR FZ 101
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1800 R 16 KF4 61,5 61,5 13 190 31,5 1 171 57 2 4 3 C C C E M4 M8 E E 4,0 tief C 2,5 tief 28 G E 7 8 6 20,25 5 7 41,25 for M6 screw 79,4 external connection to be done C C C E E
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IGBT DRIVER SCHEMATIC 3 PHASE
Abstract: IGBT DRIVER SCHEMATIC 3 phase igbt driver schematic IGBT full bridge schematics 6MBI75S-120 UPS active power 600 schematic TD351 igbt fuji igbt inverter reference schematics TD35x
Text: AN2123 Application Note TD351 Advanced IGBT Driver Principles of operation and application by Jean-François GARNIER & Anthony BOIMOND 1 Introduction The TD351 is an advanced IGBT driver with integrated control and protection functions. It is a simplified
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AN2123
TD351
TD350,
TD35x
TD352)
IGBT DRIVER SCHEMATIC 3 PHASE
IGBT DRIVER SCHEMATIC
3 phase igbt driver schematic
IGBT full bridge schematics
6MBI75S-120
UPS active power 600 schematic
igbt fuji
igbt inverter reference schematics
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fz 79 1500
Abstract: KF423
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1800 R 16 KF4 61,5 61,5 13 190 31,5 1 171 57 2 4 3 C C C E M4 M8 E E 4,0 tief C 2,5 tief 28 G E 7 8 6 20,25 5 7 41,25 for M6 screw 79,4 external connection to be done C C C E E
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Untitled
Abstract: No abstract text available
Text: Eice DR IV ER High voltage gate driver IC 6E D f a mil y - 2 nd g e nera tion 3 phase 200 V and 600 V gate drive IC 6EDL04I06PT 6EDL04I06NT 6EDL04N06PT 6EDL04N02PR EiceDRIVER™ datash eet <Revision 2.3>, 20.06.2013 Indust rial Po wer & Con trol Edition 20.06.2013
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6EDL04I06PT
6EDL04I06NT
6EDL04N06PT
6EDL04N02PR
PG-TSSOP-28
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Untitled
Abstract: No abstract text available
Text: EUPEC IGBT modules b lE D • 34032^17 G00134S 32fl H U P E C Normal modules Type Vc e S IcRM lc A ^on ts tf R«hjc DC per arm tvj max = 25 °C, typ. tvj = 25 °C, typ. tvj V us US us °C/W °c 30 3 0,4 0,5 0,3 1 150 1 ms t,| = 25 °C, typ. A tp = V v C E sa t.
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G00134S
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