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    F 2N2222A Search Results

    F 2N2222A Result Highlights (5)

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    LM2917MX/NOPB Texas Instruments Frequency to Voltage Converter 14-SOIC -40 to 85 Visit Texas Instruments Buy
    LM2907MX/NOPB Texas Instruments Frequency to Voltage Converter 14-SOIC -40 to 85 Visit Texas Instruments Buy
    LM2917M/NOPB Texas Instruments Frequency to Voltage Converter 14-SOIC -40 to 85 Visit Texas Instruments Buy
    LM2907M/NOPB Texas Instruments Frequency to Voltage Converter 14-SOIC -40 to 85 Visit Texas Instruments Buy
    LM2917N-8/NOPB Texas Instruments Frequency to Voltage Converter 8-PDIP -40 to 85 Visit Texas Instruments Buy
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    F 2N2222A Price and Stock

    Microchip Technology Inc JANSF2N2222A

    TRANS NPN 50V 0.8A TO18
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    Microchip Technology Inc JANSF2N2222AL

    TRANS NPN 50V 0.8A TO18
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    Microchip Technology Inc JANSF2N2222AUB

    TRANS NPN 50V 0.8A UB
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    TRANS NPN 50V 0.8A UA
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    Microchip Technology Inc JANSF2N2222AUBC

    RH SMALL-SIGNAL BJT
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    F 2N2222A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N2222A

    Abstract: No abstract text available
    Text: PN2222A / 2N2222A PN2222A / 2N2222A General purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2005-11-28 Power dissipation Verlustleistung 18 9 16 E BC 625 mW Plastic case Kunststoffgehäuse TO-92


    Original
    PN2222A 2N2222A UL94V-0 PN2907A 2N2907A 2N2222A PDF

    2N2222A plastic

    Abstract: 2N2222A TO-92 2N2907A plastic 2n2222a transistor 2N2907A TO-92 Transistor 2N2222A transistor 2n2222a data sheet to-92 2n2222a to 92 PN2222A 10D3
    Text: PN2222A / 2N2222A PN2222A / 2N2222A General purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2005-11-17 Power dissipation Verlustleistung 18 9 16 E BC 2 x 2.54 Dimensions / Maße [mm] 625 mW


    Original
    PN2222A 2N2222A UL94V-0 PN2907A 2N2907A 2N2222A plastic 2N2222A TO-92 2N2907A plastic 2n2222a transistor 2N2907A TO-92 Transistor 2N2222A transistor 2n2222a data sheet to-92 2n2222a to 92 10D3 PDF

    PN2907A

    Abstract: 2N2907A 2N2907A die 10D3 2N2222A PN2222A 2n2222a to 92 TO-92 Gehause 2N2907A plastic
    Text: PN2907A / 2N2907A PN2907A / 2N2907A General purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2005-11-21 Power dissipation Verlustleistung 18 9 16 E BC 2 x 2.54 Dimensions / Maße [mm] 625 mW


    Original
    PN2907A 2N2907A UL94V-0 PN2222A 2N2222A 2N2907A 2N2907A die 10D3 2N2222A 2n2222a to 92 TO-92 Gehause 2N2907A plastic PDF

    bd7995

    Abstract: P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361
    Text: H F To X 8366IT U N E B Issue 2/8534 STR910A B26000 2000 General Wiring Diagram Figure 10.1 +28 V sense) GROUND Meter Batt. sense + Sense Isolated Ground Batt. GND O FF 28 V O FF (T X O F F ) Relays K4, K1 & K2 BATT. MODE »DC» Relays K5, K6 +8 V in GROUND


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    8366IT STR910A B26000 B26050 B2G010 B26010 B2701D 9SM102/V4T7 bd7995 P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361 PDF

    motorola 2N2270

    Abstract: 2N3947 2N956 MOTOROLA JAN 2N2896 transistor motorola 2n3053 motorola 2N2270 to-18 mm3904 motorola 2N2219 2N4028 MM6427
    Text: MOTOROLA SC {XSTRS/ R F> ”ao DE~| h3b7ES4 007b70H 1 T-'*?- / General-Purpose Amplifiers Complementary transistors designed for dc to VHF amplifier and general-purpose switching applications, listed in decreasing order ° f v BR CEO within each package group.


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    h3b7E54 007b70E 2N2896 2N3700# 2N2895 2N956 2N2897 2N718 2N2221A# 2N2222AI motorola 2N2270 2N3947 2N956 MOTOROLA JAN 2N2896 transistor motorola 2n3053 motorola 2N2270 to-18 mm3904 motorola 2N2219 2N4028 MM6427 PDF

    2N2222A LCC1

    Abstract: 2N2222ACSM 2n2222a SOT23
    Text: lili IF F i IMI SEME 2N2222ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.61 ±0.10 . (0.02 * 0.004) ;


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    2N2222ACSM 2N2222A 100MH 150mA 150mA 2N2222A LCC1 2N2222ACSM 2n2222a SOT23 PDF

    2N3055E specification

    Abstract: 2N3350 2N3904D 2N3904DCSM 2n2894 2N3680 2N2222ADCSM 2N3347 2N2993 T05 Package
    Text: BS/CECC Type No. Polarity 2N 2906\ CV-0 PNP 2N2906A; PNP 1CV' ° 2N2907 1 f f j CV-0 PNP CV-0 PNP 2N2907A 2N2913y 1 50002-186 NPN Dual '2N3054 >2N3055 / ^2N3055E r rX2N3209 1 ^¿2N3209L / • ° 50004-042 50003-020 50004-XXX 50004-XXX 2N3347 2N3348 2N3349


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    ai331 2N2906\ 2N2906A* 2N2907 2N2907A 2N2913y 2N2914\ 2N2915 2N2916 2N2917 2N3055E specification 2N3350 2N3904D 2N3904DCSM 2n2894 2N3680 2N2222ADCSM 2N3347 2N2993 T05 Package PDF

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


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    27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175 PDF

    MSC027

    Abstract: No abstract text available
    Text: Micmsemi Watertown, M A 02172 PH: <B17 >26-0404 FAX: 617) 924-1296 2N2222A Features • • « « Meets MIL-S-19500/255 Collector-Base Voltage 75 Collector Current 800mA f ast 'Switching 335 nS 75 Volts 0.8 Amps NPN BIPOLAR TRANSISTOR Maximum Ratings P ¿T ':G


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    MIL-S-19500/255 800mA 2N2222A 100MHz) 100kHz 100kHz SC0275A MSC027 PDF

    ED38 diode

    Abstract: 2N2222A 338 TEKELEC 297 Sdk-85 Intel sdk-85 rom code sdk 8085 microcomputer BBL3 8048 printer intel MCS-48 Monsanto pan
    Text: intei I n t e l C orp ora tion, 1977 APPLICATION NOTE AP-27 P R IC E $1.GG Related Intel Publications "UPI-41 User's M anual” The material in this A p p l i c a ti o n Note is f o r in fo r m a t io n a l purposes on ly and is subject t o change w i t h o u t notice. lntel C o rp o ra ti o n has made an e f f o r t to ve rify t h a t the mate­


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    AP-27 UPI-41TM S-10380 CH-8021 ED38 diode 2N2222A 338 TEKELEC 297 Sdk-85 Intel sdk-85 rom code sdk 8085 microcomputer BBL3 8048 printer intel MCS-48 Monsanto pan PDF

    Untitled

    Abstract: No abstract text available
    Text: 0 . PPTEK Product Bulletin JANTX, JANTXV, 2N2222AUA September 1996 Surface Mount NPN General Purpose Transistor Types JANTX, JANTXV, 2N2222AUA .225 5 . 7 2 .0 7 5 ( 1 . 9 1 ) ,215 (5 . 4 6 ) .06 1 ( 1.55) f .1 5 5 ( 3 . 9 4 ) PIN 1- v IDENTIFIER . 145 ( 3 . 6 8 )


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    2N2222AUA IL-PRF-19500/255 PDF

    2N2222A 331

    Abstract: 2n2222 -331 2N2222A motorola 2n2222 -331 transistors 2n2222 a 331 2n2222 331 transistors 2n2222 h 331 transistors 2n2222 h 331 2n2222 - 331 2n2222 331
    Text: MOTOROLA SC XSTRS/R 12E F 2N2218A 2N2219A 2N2221A 2N2222A 2N5581 2N55S2 Unît 40 40 Vdc Vdc Sym bol 2N2218 2N2219 2N2221 2N2222 Collector-Emitter Voltage v CEO 30 Collector-Base Voltage VCBO 60 75 75 Emrtter*Base Voltage Ve b o 5.0 6.0 6.0 Vdc 'c 800 800 800


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    b3b7E54 2N2218 2N2219 2N2221 2N2222 2N2218A 2N2219A 2N2221A 2N2222A 2N2218, 2N2222A 331 2n2222 -331 2N2222A motorola 2n2222 -331 transistors 2n2222 a 331 2n2222 331 transistors 2n2222 h 331 transistors 2n2222 h 331 2n2222 - 331 2n2222 331 PDF

    2N2222A motorola

    Abstract: equivalent transistor 2N2222 2n2222 equivalent s parameters of 2N2222 equivalent of 2n2222 motorola 2N2219 2n2219 equivalent 2n2222 motorola MOTOROLA 2n2222 TRANSISTOR 2N2218A 2N2219A motorola
    Text: q S S • o f e S M A X IM U M RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current — Continuous Symbol 2N2219 2N2222 2N2218A 2N2219A 2N2222A Unit v CEO 30 40 Vdc v CBO 60 75 Vdc v EBO 5.0 6.0 Vdc mAdc


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    2N2219 2N2222 2N2218A 2N2219A 2N2222A 2N2222A motorola equivalent transistor 2N2222 2n2222 equivalent s parameters of 2N2222 equivalent of 2n2222 motorola 2N2219 2n2219 equivalent 2n2222 motorola MOTOROLA 2n2222 TRANSISTOR 2N2218A 2N2219A motorola PDF

    BF195 equivalent

    Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
    Text: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products


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    PDF

    royer oscillator

    Abstract: Royer resonant MOSFET Royer oscillator katma AX1610
    Text: 19-1128: Rev 0 :9 /9 6 y M y j x i v k i Digitally Controlled C C F L B a cklig h t P o w e r Su p p lies The MAX 1610/M AX 1611 are fu lly in te g ra te d , highefficiency drivers for co ld-cathode fluorescent lamps C C F Ls . They o p e ra te from a 4.5V to 26V p ow er


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    1610/M AX1610/M X1611 -0041A royer oscillator Royer resonant MOSFET Royer oscillator katma AX1610 PDF

    BSX21

    Abstract: BC107C BC10B 2N718 pin configuration 2N915 BC109C pin configuration bfy76 BSY79 BC-108 2N2221A
    Text: TO-18 P IN C O N F I G U R A T I O N 1. E m itte r 2. B a s e 3. C o lle c to r DIM MIN A 5,24 MAX 5,84 B 4,52 4,97 C 4,31 5,33 D 0,40 0,53 E - F - 0,76 1,27 G - 2,97 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45 DEG ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN


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    BCY59-9 BFY76 BSX21 BSX48 BSY79 CIL351 CIL352 BSX21 BC107C BC10B 2N718 pin configuration 2N915 BC109C pin configuration BC-108 2N2221A PDF

    Untitled

    Abstract: No abstract text available
    Text: ¡J8BBBBB88& p | M iwiHBBffi smssssPe .rfHHHHHHHHMh. 1m1 itittnnnnn hhhhhhk-. loniftBHhr. I Ir ^888o 88% #f 1 l D a ta S h e e t No. 2 N 2 2 2 2 A U B $ sdL SEMICONDUCTORS G eneric Part Num ber: 2N2222A Type 2N2222AUB G eom etry 0400 P olarity NPN Q ual Level: J A N -J A N S


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    J8BBBBB88& 2N2222A 2N2222AUB F-19500/255 PDF

    Untitled

    Abstract: No abstract text available
    Text: ¡J8BBBBB88& iwiHBBffi p e | M s mssssP .rfHHHHHHHHMh. m1 1 itittnnnnn hhhhhhk-. loniftBHhr. IIr ^888o 88% #f 1 l Da ta S he e t No. 2 N 2 2 2 2 A $ sdL SEMICONDUCTORS G eneric Part Num ber: 2N2222A Type 2N2222A G eom etry 0400 P olarity NPN Q ual Level: J A N -J A N S


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    J8BBBBB88& 2N2222A F-19500/255 PDF

    Royer oscillator

    Abstract: Royer resonant AX161 Diode T3 D40 4181 sumida Royer oscillator circuit diagram AX1610
    Text: 19-1128; R ev 0:9/96 A M X I A I Digitally C ontrolled C C F L B a ck lig h t P o w e r S u p p lies The MAX1610’s digital inputs increment, decrement, or c le a r an internal, 5-bit up/down counter, which sets C C F L b rig h t n e s s . T h e M AX1611 u s e s a S yste m


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    AX1610/M AX1611 MAX1610/MAX1611 MAX1610/MAX1611 4040N104M250 1808H A330KATMA GHM1040SL330J3K 302C1812A330K 302R29N330K Royer oscillator Royer resonant AX161 Diode T3 D40 4181 sumida Royer oscillator circuit diagram AX1610 PDF

    M6800 programming manual

    Abstract: PIR based human motion DETECTOR CIRCUIT DIAGRAM MC6820 PIA mcm6830 BURROUGHS self scan car ecu microprocessors DVD CD 5888 CB MC6810 IP 8082 BL 4013 FLIP FLOP APPLICATION DIAGRAMS
    Text: MOTOROLA M 6800 Microprocessor Appi i cat i ons Manual B e n c h m a r k F a m ily F o r M ic r o c o m p u t e r S y s te m s I I I tlß i by C om puter A p p lic a tio n s Engineering M OTOROLA S e m ic o n d u c to r Products Inc. M6800 APPLICATION MANUAL


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    1B800 M6800 M6800 programming manual PIR based human motion DETECTOR CIRCUIT DIAGRAM MC6820 PIA mcm6830 BURROUGHS self scan car ecu microprocessors DVD CD 5888 CB MC6810 IP 8082 BL 4013 FLIP FLOP APPLICATION DIAGRAMS PDF

    Untitled

    Abstract: No abstract text available
    Text: TO-18 - A • T o P IN C O N F IG U R A T IO N 1. E m itte r 2. B a s e 3 . C o lle c to r DIM MIN A 5,24 5,84 B 4,52 4,97 MAX C 4,31 5,33 D 0,40 0,53 0,76 E - F - 1,27 G - 2,97 H 0,91 1,17 J 0,71 1,21 K 12,7 L 45 DEG - ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN


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    2N2221 BSX48 CIL352 BSX21 BFY76 BCY59-9 BCY59-8 BCY59-7 BCY59-10 BCY59 PDF

    tl 2n2222

    Abstract: 2N2222 2n2222 ti 2N2222 npn small signal current gain 2N2222 circuit output impedance of 2N2222 2N2222, 2N2222A Transistor 2N2222A 2n2222 test circuit Metal 2n2222
    Text: N AMER PHILIPS/DISCRETE b'IE D • bbS3T31 OOEÛÜflb 12G I IAPX 2N2222 2N2222A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a T O -18 metal envelope w ith the collector connected to the case. They are primar­ ily intended for high speed switching. The 2 N 2 2 2 2 is also suitable for d.c. and v.h.f./u.h .f. amplifiers.


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    bbS3T31 2N2222 2N2222A 2N2222A 100ms tl 2n2222 2n2222 ti 2N2222 npn small signal current gain 2N2222 circuit output impedance of 2N2222 2N2222, 2N2222A Transistor 2N2222A 2n2222 test circuit Metal 2n2222 PDF

    BCY79-9

    Abstract: bcy791 BcY591 BSX21 2N706 BC107C BC109C pin configuration 2N706A 2N718A 2N720
    Text: TO-18 h - B -h ! o PIN C O N F IG U R A T IO N 1. Em itter 2. B a s e 3. Co llector DIM MIN A 5 ,2 4 M AX 5 ,8 4 B 4 ,5 2 4 ,9 7 C 4,31 5 ,3 3 D 0 ,4 0 0 ,5 3 0 ,7 6 E - F - 1,27 G - 2 ,9 7 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45 D E G ALL DIMENSIONS ARE IN M.M.


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    2N706 2N706A BCY79-9 BCY79-10 BFX37 CF103 23fl33cm 000135T BCY79-9 bcy791 BcY591 BSX21 BC107C BC109C pin configuration 2N718A 2N720 PDF

    2N2222A

    Abstract: 2N2907A HCT700 vbe 10v, vce 500v NPN Transistor TL 2N2222A npn transistor
    Text: m i Ë F ti llll HCT700 SEME LAB MECHANICAL DATA COMPLEMENTARY SWITCHING TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS Dimensions in mm inches LCC2 - Ceramic Surface Mount Package FEATURES 2.29 ± 0.20


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    HCT700 500mA 100MHz 100kHz 150mA 300ms, 2N2222A 2N2907A HCT700 vbe 10v, vce 500v NPN Transistor TL 2N2222A npn transistor PDF