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    2N2895 Price and Stock

    Microchip Technology Inc 2N2895

    PNP TRANSISTOR
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    Central Semiconductor Corp 2N2895

    Bipolar Transistor NPN High Current 80V 1A 3-Pin TO-18 Through Hole Box - Boxed Product (Development Kits) (Alt: 2N2895)
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    Central Semiconductor Corp 2N2895 PBFREE

    Transistor GP BJT NPN 65V 1A 3-Pin TO-18 Box - Boxed Product (Development Kits) (Alt: 2N2895 PBFREE)
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    Central Semiconductor Corp 2N2895 TIN/LEAD

    Transistor GP BJT NPN 65V 1A 3-Pin TO-18 Box - Boxed Product (Development Kits) (Alt: 2N2895 TIN/LEAD)
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    New Jersey Semiconductor Products, Inc. 2N2895

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    Bristol Electronics 2N2895 1,553 3
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    2N2895 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N2895 Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=NPN / Pkg=TO18 / Vceo=65 / Ic=1 / Hfe=50min / fT(Hz)=120M / Pwr(W)=0.5 Original PDF
    2N2895 Semelab Bipolar NPN Device in a Hermetically Sealed TO18 Metal Package - Pol=NPN / Pkg=TO18 / Vceo=65 / Ic=1 / Hfe=50min / fT(Hz)=120M / Pwr(W)=0.5 Original PDF
    2N2895 Central Semiconductor NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Scan PDF
    2N2895 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N2895 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N2895 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N2895 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N2895 Unknown Shortform Electronic Component Datasheets Short Form PDF
    2N2895 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N2895 Unknown Vintage Transistor Datasheets Scan PDF
    2N2895 Unknown Vintage Transistor Datasheets Scan PDF
    2N2895 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N2895 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N2895 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N2895 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N2895 Unknown GE Transistor Specifications Scan PDF
    2N2895 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N2895 New England Semiconductor SMALL SIGNAL NPN TRANSISTOR TO-18 Scan PDF
    2N2895 Raytheon Selection Guide 1977 Scan PDF
    2N2895 Semico NPN General Purpose Medium Speed Amplifiers Scan PDF

    2N2895 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N2895 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 65V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A All Semelab hermetically sealed products


    Original     		PDF 2N2895 O206AA) 19-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: 2N2895 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 65V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A All Semelab hermetically sealed products


    Original     		PDF 2N2895 O206AA) 16-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N2895 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)65 V(BR)CBO (V)120 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)175þ I(CBO) Max. (A)2.0nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N2895 Freq120M

    2N2895

    Abstract: 120M
    Text: 2N2895 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 65V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A All Semelab hermetically sealed products


    Original     		PDF 2N2895 O206AA) 2-Aug-02 2N2895 120M

    switch NPN

    Abstract: BSY18 2N2369 2n4390
    Text: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV


    Original     		PDF 2N703 2N706C 2N708 2N709A 2N717 2N718A 2N719A 2N720A 2N721 2N722A switch NPN BSY18 2N2369 2n4390

    2N3810 LCC

    Abstract: 206AA *2N2920* LCC 2N3811 JANTX 2n3737 2N2907AUB
    Text: Bipolar Small Signal Transistors Page 1 of 9 Next Home Package Device Type VCEO sus Volts IC (max) Amps hFE@IC/VCE min/max @ mA/V VCE(sat)@ IC/IB COB V@mA/mA pF fT MHZ PNP TO-5/205AD 2N1132A 40 0.6 30/90@150/10 1.5@150/15 30 60 NPN TO-5/205AD 2N1613,L *


    Original     		PDF O-116 2N3810 LCC 206AA *2N2920* LCC 2N3811 JANTX 2n3737 2N2907AUB

    MSC2404

    Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage


    Original     		PDF MSA1022-CT1 Emitte218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72

    BF245

    Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30


    Original     		PDF MSC2295-BT1 MSC2295-CT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BF245 BC237 mps8093 bf244 MSA1022 msc2295 MAD1107P MPS6568

    stencil

    Abstract: BC237 automatic heat detector project report BC393 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54T1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and


    Original     		PDF BAT54T1 Ju218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 stencil BC237 automatic heat detector project report BC393 equivalent

    BC237

    Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device


    Original     		PDF SC-70/SOT-323 Spa218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 level shifter 2N5401 2771 040 0002 MUN5214T1

    2n3013

    Abstract: 2n3700a
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 PACKAGE TO-18 T0206AA v DEVICE TYPE V cEO Ic sus VOLTS (max) AMPS 2N2481 15 0.05 2N2484 60 2N2895 VCE min/max @ mA/V 1»FE @ V VcE(sat) @ V @ mA/mA C(P P fx (MHz) 40/120@10/l 0.25@10/1 5 300 0.05


    OCR Scan     		PDF 2N2481 T0206AA 2N2484 2N2895 2N2896 2N2897 2N3013 2N3014 2N3302 2N3700A

    2N2896

    Abstract: No abstract text available
    Text: M A X IM U M RATINGS Rating C o lle c to r -E m itte r V o lta g e Symbol 2N2895 2N2896 Unit VC E O 65 90 Vdc C o lle c to r -E m itte r V o lta g e VCER 80 140 Vdc C o lle c to r-B a s e V o lta g e v CBO 120 140 Vdc E m itte r-B a s e V o lta g e V e BO


    OCR Scan     		PDF 2N2895 2N2896 2N2895, 2N2896

    2N3053 NPN transistor

    Abstract: 2n2917 dual transistor 2N2906AQF 2N2907AQF 2N2917
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No 2N2893 2N2894 2N2894A 2N2894ACSM 2N2894AQF 2N2894CSM 2N2894DCSM 2N2895 2N2896 2N2904 2N2904A 2N2904AL 2N2904L 2N2905 2N2905A 2N2905AL 2N2905L 2N2906 2N2906 CECC 2N2906A 2N2906A CECC 2N2906ACSM


    OCR Scan     		PDF 250mW 80min 30min 40min 4/30m 10/10m 360mW 2N3053 NPN transistor 2n2917 dual transistor 2N2906AQF 2N2907AQF 2N2917

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTO R T O -18 PACKAGE DEVICE TYPE sus VOLTS Ic (max) AMPS TO-18 T0206AA 2N706 2N718 2N930 2N2221 2N2221A 2N2222 2N2222A 2N2368 2N2369 2N2369A 2N3227 2N2432 2N2432A 2N2481 2N2484 2N2895 2N2896 2N2897 2N3302


    OCR Scan     		PDF T0206AA 2N706 2N718 2N930 2N2221 2N2221A 2N2222 2N2222A 2N2368 2N2369

    2N2897

    Abstract: 2N2895 2N2896
    Text: MOTOROLA SC XSTRS/R 12E F D I b3fc>7BS4 Q QÖt . 27 3 T | 2N2895'r’ 27''3 thru 2N2897 MAXIMUM RATINGS Rating Symbol 2N2895 2N2896 2N2897 U nit VCEO 65 90 45 Vdc Coltector-Emitter Voltage Collector-Emitter Voltage VCER 80 140 60 Vdc Collector-Base Voltage


    OCR Scan     		PDF 2N2895 2N2896 2N2897 2N2897 2N2896, 2N2895,

    2n3700a

    Abstract: 2n3946 npn transistor 2N3947 2n4013 2N2897 2N3302 2N2484 JANTX 2N3013 JANTX ST 2N4014 2N2481
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 PACKAGE TO-18 T0206AA v n «. sus VOLTS lc (max) AMPS 2N2481 15 0.05 2N2484 60 2N2895 DEVICE TYPE VcEO hfE @ Ic/ VcE min/max @ mA/V VcE(sat) @ Ic^B V @ m A/mA C9P p fr (MHz) 40/120@10/l 0.25@10/1


    OCR Scan     		PDF 2N2481 2N2484 T0206AA 2N2895 2N2896 2N2897 2N3013 2N3014 2N3302 2N3700A 2n3946 npn transistor 2N3947 2n4013 2N2484 JANTX 2N3013 JANTX ST 2N4014

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    2N2310

    Abstract: 2N2102A 2N2351 2N1990 T046 2N2309 2N2243 2N2193B 2N2193A 2N2311
    Text: Transistors Cont. Discrete Devices Genera Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N1990 2IM2008 VCB Volts VCE Volts NPN 600 100 _ NPN 175 110 VEB Volts 3 8 H f e @ 'C VçE(Sat) @ lc / 'B


    OCR Scan     		PDF 2N1990 2N2008 2N2102 2N2102A 2N2192 2N2192A 2N2192B 2N2193 150/151A 2N2352 2N2310 2N2351 T046 2N2309 2N2243 2N2193B 2N2193A 2N2311

    2n3298

    Abstract: 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888 2N1613
    Text: jGmitronicr Sem itronics Corp. SEMICONDUCTORS metal can transistors cont’d silicon small signal transistors Maximum Ratings O m ite Type Package Po V cb VC E Ambient Volts Volts mW Electrical Characteristics @ 25 C V c e Sat @ Ic /ls V eb 1>FE Volts Min/Max


    OCR Scan     		PDF 2N1613 2N16I3A 2N1613B 2N17I1 2N17IIA 2N3725A 2N3947 2N40B0 2N4137 2N4207 2n3298 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


    OCR Scan     		PDF 06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211

    N3020

    Abstract: 2N2951 2N3114 2N3301 ST 2N3053 2N2219 2N2219A 2N2220 2N2221 2N2221A
    Text: central se mi co nd u ct or 1989963 CENTRAL SEMICOND U C T O R " bï D F | n a n t . 3 oooosit, i " _ 61C 00 216 NPN M E TA L CAN - SW ITCHING A N D G ENER AL PURPOSE Cont'd. < o 00 — 21 VCE V eb h FE at •c V CE V V V min max mA V 2N2219 2N2219A 2N2220


    OCR Scan     		PDF 2N2219 2N2219A 2N2220 2N2221 2N2221A 2N2222 2N2222A 2N2236 CBR30 0000S23 N3020 2N2951 2N3114 2N3301 ST 2N3053

    2N9308

    Abstract: 2N221BA 2N69S 2N3304 2M2193 2NI893 2N4080 2N236S 2N408 2N238
    Text: INTEX/ SEMITRôNICS CORP 27E D T-A 7 - 0 [ 4ñLTSMb 00DDS7Ì t J E m iE T D F l Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon sm all signal transistors Msxinium Ratines Device 2N497 2N49B 2N65S 2H657 Type NPN NPN NPN NPN NPN- Package TO 5


    OCR Scan     		PDF 00DDS7Ã T-A7-01 2N497 12/3S 30/S9 2N3725A 2N3947 2N4080 2N4137 2N4207 2N9308 2N221BA 2N69S 2N3304 2M2193 2NI893 2N236S 2N408 2N238

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan     		PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    2N2195

    Abstract: 2N1990 2N1893 motorola 2N3700 DIE motorola 2N2270 2N736 2n2102 motorola 2N2297 motorola 2N3019 2N699
    Text: 34 MOTOROLA SC -CDI0DES/0PT03- 6367255 MOTOROLA SC DE |t,3b72SS 0037=173 S | D IO D E S /O P T O 34C * SILICO N SM ALL-SIG NAL T R A N SISTO R DICE (continued) 37973 r-z-7-^ 2C21 02 DIE NO. — NPN LINE SOURCE — DSL7 D ¿St This die provides performance similar to that of the following device types:


    OCR Scan     		PDF -CDI0DES/0PT03- 3b72SS 2N656 2N699 2N718 2N720 2N735 2N736 2N739 2N740 2N2195 2N1990 2N1893 motorola 2N3700 DIE motorola 2N2270 2n2102 motorola 2N2297 motorola 2N3019