F002B Search Results

29f002tc

Contextual Info: FLASH MEMORY CMOS 2M 256K x 8 BIT MBM29F002T C - 5 5 -70/-90/M B M29 F002B C - 55 /-70/-90 • FEATURES • • • • • • • • • • • • • • • Single 5.0 V read, write, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands

XT8380S

Abstract: ST296N ST2383N ST4350N maxtor lxt200s ST125N ST4766N IMSB404 IMS B404 seagate ST01
Contextual Info: Chapter 10 93 IMS F002B SCSI libraries □ Product Information A software support package for the IMS B422 SCSI TRAM KEY FEATURES • Connection of SCSI Small Computer System Interface peripheral devices to transputer applications. • O c c a m 2 and ANSI C toolset compatible (IMS Dx205 and IMS Dx214).

D4205

Abstract: B-429 IMS B404 b008 b429
Contextual Info: 471 Index by product number For the purposes of this index the product number prefix 'IMS’ is not shown. B008 309 CA12 383 B012 361 CA13 385 B014 329 CA14 385 B015 353 B016 333 B017 321 B018 375 B250 381 B300 377 B401 149 B404 173 B408 209 B409 219 B410 161

Contextual Info: — Am29F002T/F002B AM D il 2 Megabit 262,144 x 8-Bit CMOS 5.0 Volt-only, Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system-level power requirements ■ Compatible with JEDEC-standard commands

AS19F

Abstract: 29F2C F002T
Contextual Info: O rd e rin g in fo rm a tio n X Ordering inliirmiii um Asynchronous SRAM port numbering system Package type- P= P D IP I - SO I Voltage: SRAM Blank 5 = 5 V 'C M O S D ensity an d —3 ï V C M O S org an ization Po w e r L LL — L o w pow er Acct ss = V e ry lo w p o w e r

Contextual Info: — Am29F002T/F002B AM D il 2 Megabit 262,144 x 8-Bit CMOS 5.0 Volt-only, Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system-level power requirements ■ Compatible with JEDEC-standard commands

BLV34

Abstract: 1S28 F002B issi 72m
Contextual Info: •■ 262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY ADVANCE INFORM ATION JULY 1997 • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation • High-Performance Read Maximum Access Times — 5V: 60/80/120 ns — 3V: 110/130/150 ns

Contextual Info: A High Perform,u h e I S6k X K S V C M O S I l.isli M P R O M VS 21 1(1 Z 1S6Kx8 CMOS Hush M PNOM Preliminary information Features • O r g a n iz a t i o n : 2 5 6 K X 8 1 L o w r p o w e r c o n s u m p t io n • S e c to r a r c h it e c t u r e - 4 0 m A m a x im u m read cu rren t

Contextual Info: Advance Information CAT29F002 2 Megabit CMOS 5V Only Sector Flash Memory FEATURES 100,000 Program/Erase Cycles and 10 Year Data Retention • Fast Read Access Time: 90/120/150 ns ■ Sectored Architecture: End of Write Detection — One 16-KB Boot Sector -

7F60

Abstract: T222-20
Contextual Info: Chapter 33 283 IMS B422 SCSI TRAM Size 2 mos Engineering Data 64 Kbytes SRAM Reset- ► Analyse- *NotError LlnkO —I _I— Linkl —I_ H Link2 H b Llnk3 - I h- SCSI Bus IMS T222 SSReset SSAnalyse notSSError FEATURES GENERAL DESCRIPTION

Contextual Info: 262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY • S m artV oltage T echnology — 5V or 12V Program /Erase — 2.7V, 3.3V or 5V Read O peration • H igh-Perform ance Read M axim um Access Tim es — 5V: 60/80/120 ns — 3V: 110/130/150 ns — 2.7V: 120 ns