A4H1
Abstract: HD6417750RBG240 264-PIN BSC COMPUTER SCIENCE digital logic design Notes Transistor mcr 22-8 413 REJ10B0210-0400 A5H1 zo 607 HD6417750RBP240V Tag 225 600 replacement
Text: REJ09B0366-0700 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. SH7750, SH7750S, SH7750R Group 32
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REJ09B0366-0700
SH7750,
SH7750S,
SH7750R
32-Bit
Family/SH7750
A4H1
HD6417750RBG240
264-PIN
BSC COMPUTER SCIENCE digital logic design Notes
Transistor mcr 22-8 413
REJ10B0210-0400
A5H1
zo 607
HD6417750RBP240V
Tag 225 600 replacement
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DSA-001
Abstract: hitachi HD6417750BP200 822 1334 Hitachi DSA002753
Text: SuperH SH 32-Bit RISC MCU/MPU Series SH7750 High-Performance RISC Engine Hardware Manual ADE-602-124B Rev. 3.0 09/20/99 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in
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32-Bit
SH7750
ADE-602-124B
SH7750
200MHz
167MHz
HD6417750BP200
HD6417750F167
HD6417750F167I
128MHz
DSA-001
hitachi HD6417750BP200
822 1334
Hitachi DSA002753
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HD6417750SF167V
Abstract: BSC COMPUTER SCIENCE visual basic Notes HXXXXX hudi D63D48 SZ100 DBL 1035 Nippon capacitors SCHEMATIC ATI graphics card HD6417750BP200M
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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SH7750,
SH7750S,
SH7750R
REJ09B0366-0700
HD6417750SF167V
BSC COMPUTER SCIENCE visual basic Notes
HXXXXX
hudi
D63D48
SZ100
DBL 1035
Nippon capacitors
SCHEMATIC ATI graphics card
HD6417750BP200M
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1k eprom
Abstract: Hitachi DSA002732
Text: Hitachi SuperH RISC engine SH7750 Series SH7750, SH7750S Hardware Manual ADE-602-124C Rev. 4.0 4/21/00 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in
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SH7750
SH7750,
SH7750S
ADE-602-124C
SH7751
TN-SH7-247A/E
SH7750S
HD6417750
1k eprom
Hitachi DSA002732
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Untitled
Abstract: No abstract text available
Text: One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 201 376-2922 (212)227-6005 FAX: (201) 376-8960 KSC1674 NPN EPITAXIAL SILICON TRANSISTOR inir"D \mrLlrltn, TV PIF AMPLIFIER, FM TUNER RF/Ml/ini MIXER, OSCILLATOR 1 TO-92 • High Current-Qain-Bandwidth Product fT=6QOMHz (Typ)
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KSC1674
100MHz
10fiA,
f-100MHz
Rs-50n,
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MPSA63
Abstract: MPSA63 equivalent 100C100B mps-a63 C10AA MPSA62 mpsa64
Text: TOSHIBA TRANSISTOR MPSA62, 63, 64 SILICON PNP EPITAXIAL TYPE PCT PROCESS DESIGNED FOR PRE-AMPLIFIER INPUT APPLICATIONS REQUIRING HIGH INPUT IMPEDANCE. FEATURES : • High DC Current Gain I I C-10«A : hFE- 5000(Min.) MPSA63 10000(Min.) MPSA64 20000(Min.) MPSA62
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MPSA62,
MPSA63
MPSA64
MPSA62
BVCES-30V
C-100
MPSA63.
MPSA64
MPSA63 equivalent
100C100B
mps-a63
C10AA
MPSA62
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YTS2222A
Abstract: transistor marking 1p Z
Text: ¡ TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS y t ä m m II YTSZZZZA FOR GENERAL PUROSE USE Unit in mm MEDIUM-SPEED SWITCHING AND AUDIO TO VHF FREQUENCY APPLICATION FEATURES: . DC Current Gain Specified : 0.1— 500mA . Low Collector-Emitter Saturation Voltage
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500mA
YTS2222A
300MHz
YTS2907A.
500mA,
Ta-25
150mA,
YTS2222A
transistor marking 1p Z
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YTS4401
Abstract: MARKING e1v
Text: SILICON NPN EPITAXIAL TYPE YTS4401 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES : • Low Leakage Current : Ic]jv=100nA Max. , Iggy=-100nA (Max.) @ VCE=35V, V b e =-0.4V • Excellent DC Current Gain Linearity • Low Saturation Voltage
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YTS4401
100nA
-100nA
150mA,
YTS4403
500mA,
f-100MHz
YTS4401
MARKING e1v
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Untitled
Abstract: No abstract text available
Text: M i- 2N2222A GENERAL PURPOSE NPN TRANSISTOR 61096 OPTOELECTRONIC PRODUCTS DIVISION Features • • • • 0 210 5 33 , 0 170(4 32) [' TO -18 style package Rugged package - able to withstand high acceleration load Hermetically sealed MIL-S-19500 screening available
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2N2222A
MIL-S-19500
2N2222A
f-100MHz
100kHz
150mA,
300ns,
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2SJ83
Abstract: 2SK238 2SJ82 2SK241 2SK240 2SK203 2SK220 2S119 2SK197 2SK198
Text: - 38 - * . 1 fr K ft f M € tí: € 2SK197 B ÍL B ÍL 2SK198 tñ“ F 2 SK196 H 2SK199 2SK201 NEC 2SK203 NEC 2SK208 m m m £ 4 -k % Vg s * X V* m (V) * (V) 800m 2m 120 0.2 -2 10 10m G 150m -lOn -0.5 2m 14m 10 -0.3 -4 10 LF A J N D -30 GDO 10m G 150m
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2SK19600
2SK197
2SK198
2SK199
2SK201
2SK217
2SK218
2SK220
2SK221
2SS222
2SJ83
2SK238
2SJ82
2SK241
2SK240
2SK203
2S119
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2SK520
Abstract: 2SK523 2SK508 2SK537 2sk515 2SK511 2SK514 2SK518 2SK519 2sk43
Text: - 28 - € tt £ m & m iS f . 1 1 Jk K /È Ä V* V m m . (V) «• m të P d /P c h * * (A) * * (W) Ig s s (max) (A) Vg s (V) ^ W (Ta=25°C) te (min) (max) Vd s (V) (V) (V) (min) (max) Vd s (A) (A) (V) Id (A) Q (min) (S) 1 I >>60 B -— ' ü Vd s (V) Id
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2SJ299
2SJ300
2SJ317
2SK11
2SK12
2SK521
100MHZ
2SK522
20mVmax
2SK523
2SK520
2SK523
2SK508
2SK537
2sk515
2SK511
2SK514
2SK518
2SK519
2sk43
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Untitled
Abstract: No abstract text available
Text: PJ2N3904 NPN Epitaxial Silicon Transistor GENERAL PURPOSE TRANSISTOR • • Collector-Emitter Voltage: VCe o = 40V Collector Dissipation: Pc max = 625 mW TO-92 SOT-23 B ABSOLUTE M AXIM U M RATINGS (Ta = 25 C) Symbol Rating Unit Collector-Base Voltage VCBO
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PJ2N3904
OT-23
Cut-off70
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Untitled
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR FMMT5179 ISSU E 3 - JANUARY 1996 FEATURES * High fT=900M H z M in * M a x capacitance=1pF * Low noise 4.5dB m i P A R T M A R K IN G D ET A IL -1 7 9 SOT23 ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L
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FMMT5179
-10mA,
f-100MHz
200MHz
200MHz
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Untitled
Abstract: No abstract text available
Text: SM-8 COMPLEMENTARY M EDIUM POWER HIGH GAIN TRANSISTORS ZDT6718 ISSUE 1 - NOVEMBER 1995 - ci c r _U Bi Ct C L =□ Ei NPN C» 1 1 ZD b2 c2 l 1 ZO e2 pnp PARTMARKING DETAIL- T6718 ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M B O L NPN
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ZDT6718
T6718
-10mA,
-50mA,
100MHz
FMMT718
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transistor C 245 b
Abstract: ZTX1053A
Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1053A ISSU E 2 - JANUARY 1995_ — — — — — — — - ABSOLUTE M A X IM U M RATINGS. PARAMETER SYM BO L Collector-Base Voltage ZT X 1 05 3A U N IT v CBO 150 V Coliector-Emitter Voltage
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ZTX1053A
ZTX1053A
100mA*
lc-10mA,
IC-10A,
lc-50mA,
f-100MHi
transistor C 245 b
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Untitled
Abstract: No abstract text available
Text: 45E D • ^ 0 ^ 7 2 5 0 DDlVflbl 2 TOSHIBA TRANSISTOR T0S4 - MPS2907A SILICON PNP EPITAXIAL TYPE PCT PROCESS TO SHIBA (DISCRETE/OPTO) FOR HIGH SPEED SWITCHING USE Unit in mm DC TO VHF AMPLIFIER APPLICATIONS AND COMPLEMENTARY CIRCUTRY. FEATURES : . High DC Current Gain Specified : -0.1- 500mA
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MPS2907A
500mA
Ic--50mA,
fT-200MHz
MPS2222A.
Ta-25
IB30V,
-150mA
-15mA
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transistor marking MK
Abstract: YTS2222
Text: TOSHIBA TRANSISTOR YTS2907 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR HIGH-SPEED SWITCHING USE Unit in mm DC TO VHF AMPLIFIER APPLICATIONS AND COMPLEMENTARY CIRCUITRY FEATURES: . High DC Current Gain Specified : -0.1~ -500mA . High Transition Frequency : @ Ic— 50mA, fx*200MHz(Min.)
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YTS2907
-500mA
200MHz
YTS2222
-500mA,
-50mA
Ta-258C)
-10/iA,
-10mA,
10/iA,
transistor marking MK
YTS2222
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BC8468
Abstract: BC347C BCS46A pnp 400V BC347 BCS48 BC8508 BCS46B BC347A BC349
Text: BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C 1 General Purpose Transistor P N P Silicon "M oisture Sen sitivity Level M A R K IN G M A R R A M n X X - Drvfc» Codt See 1.M * H rlow > SOT-23 1 •U * E S D Rating • Hum an B o d y M odel:> 4000V D M ach in e Model: >4-00V
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BCK46AVB-BC847A/B/C
BC848A/B/C-BC849B/C
BC850B/C
BC846
BC847,
BC850
BC848,
BC849
BC8468
BC347C
BCS46A
pnp 400V
BC347
BCS48
BC8508
BCS46B
BC347A
BC349
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2SK30
Abstract: 2sK30 fet 2SK19TM 2SK34 FET 2SK23A 2SK44SP 2sk43 3A 2SK30 2SK37 2SK33
Text: - 28 - € tt £ m & m iS f . 1 1 Jk K /È Ä V* V m m . * * (V) «• m të P d /P c h (A) * * (W) Ig s s (max) (A) Vg s (V) ^ te W (Ta=25°C) (min) (max) Vd s (V) (V) (V) (min) (max) V d s (V) (A) (A) Id (A) Q (min) (S) 1 I >>60 B -—' ü Vd s (V) Id
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2SJ299
2SJ300
2SJ317
2SK11
2SK12
10DGS,
2SK41NP
2SK25
2SK30ATM
2SK30
2SK30
2sK30 fet
2SK19TM
2SK34
FET 2SK23A
2SK44SP
2sk43
3A 2SK30
2SK37
2SK33
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Untitled
Abstract: No abstract text available
Text: - fe /Ë • a II • M I 3 O 1 H » : ^ « a í t a ^ o i s s d r IB E # @ S S íí, í 'l l o m f f î i S M î i X ' t -, f- y *- pin K E9. • Ml 3 0 3 t o : # w y ÿ'fflo (p in y 4 % — k ) EM • Ml 3 0 8 : S a ® 1 8 8 l® a i$ fflT (PIN •M I 4 O 2
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470MHz
100MHz
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ZTX552
Abstract: ZTX550 ZTX551 ZTX553 TMB-250
Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX550 ZTX551 ISSUE 1 - MARCH 94_ FEATURES * 60 Volt VCE0 * 1 Amp continuous current * Pi0,= 1Watt ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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60VoltVCEO
ZTX550
ZTX551
ZTX550
ZTX551
-100nA
-10mA
100pi
ZTX552
ZTX553
TMB-250
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ZTX214C
Abstract: T092 ZTX300
Text: NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR ISSU E 2 - MARCH 94_ FEATURES * 15 Volt V,CEO fT=500 M H z ABSOLUTE M A X IM U M RATINGS. SY M B O L PARAMETER Coliector-Base Voltage VALUE V CBO 40 Collector-Emitter Voltage
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lc-10mA,
-10mA,
-100mA,
f-100MHz
U-200MA
200Hz,
15KHz
ZTX214C
T092
ZTX300
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1055A ISSUE 3 -JANUARY 1995_ — FEATURES * * * * - V ceo=120V 3 A m p continuous Current 6 A m p pulse Current Very Low Saturation Voltage APPLICATIONS *
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ZTX1055A
NY11725
3510Metroplaza,
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P1y transistor
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 -JANUARY 1995_ ' - ZTX1056A FEATURES * V c e o =1 6 0 V * 3 A m p C o n t in u o u s Current * 6 A m p P u lse Current * L o w Sa tu ra tio n V olta ge ABSOLUTE MAXIM UM RATINGS.
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ZTX1056A
P1y transistor
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