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    F1041 Search Results

    F1041 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    UPD78F1041AGK-GAK-AX Renesas Electronics Corporation 16-bit Low-power Microcontrollers (Non Promotion), , / Visit Renesas Electronics Corporation
    SF Impression Pixel

    F1041 Price and Stock

    Harwin G125-22496F1-04-16-00

    CONN RCPT 4PWR + 16SIGNAL
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    DigiKey G125-22496F1-04-16-00 Bag 86 1
    • 1 $19.94
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    • 100 $12.8819
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    Mouser Electronics G125-22496F1-04-16-00 25
    • 1 $19.05
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    Newark G125-22496F1-04-16-00 Bulk 60 1
    • 1 $18.88
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    TTI G125-22496F1-04-16-00 Each 20 10
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    Avnet Abacus G125-22496F1-04-16-00 9 Weeks 40
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    HUBER+SUHNER SF104-11SMA-11SMA-1000MM

    COAX CBL SMA TO SMA
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    DigiKey SF104-11SMA-11SMA-1000MM Bulk 32 1
    • 1 $291.33
    • 10 $228.657
    • 100 $195.5998
    • 1000 $195.5998
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    Unictron Technologies Corp H2MA803F104100

    ACTIVE ANTENNA HB45DF; GPS(L1+L5
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    DigiKey H2MA803F104100 Bag 20 1
    • 1 $31.57
    • 10 $23.656
    • 100 $19.3707
    • 1000 $18.75
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    Harwin M80-263F104-12-00

    CONN RCPT HSG 16POS
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    DigiKey M80-263F104-12-00 Bag 18 1
    • 1 $26.8
    • 10 $22.886
    • 100 $19.2363
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    Mouser Electronics M80-263F104-12-00 43
    • 1 $24.52
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    Newark M80-263F104-12-00 Bulk 13 1
    • 1 $4.71
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    TTI M80-263F104-12-00 Bulk 30
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    Avnet Abacus M80-263F104-12-00 8 Weeks 30
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    HUBER+SUHNER SF104-11SMA-11SMA-2000MM

    COAX CBL SMA TO SMA
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    DigiKey SF104-11SMA-11SMA-2000MM Bulk 14 1
    • 1 $293.56
    • 10 $272.034
    • 100 $293.56
    • 1000 $293.56
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    F1041 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    F10410 Fairchild Semiconductor 256 x 1 Bit Fully Decoded RAM Scan PDF
    F10410DC Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    F10410FC Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    F10410PC Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    F10411 Fairchild Semiconductor 256 x 1 Bit Fully Decoded RAM Scan PDF
    F10411DC Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    F10411FC Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    F10411PC Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    F10414DC Fairchild Semiconductor 256 x 1 Bit Static RAM Scan PDF
    F10414DC Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    F10414FC Fairchild Semiconductor 256 x 1 Bit Static RAM Scan PDF
    F10414PC Fairchild Semiconductor 256 x 1 Bit Static RAM Scan PDF
    F10415ADC Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    F10415AFC Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    F10415DC Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    F10415FC Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    F10416DC Fairchild Semiconductor 256 x 4-Bit Programmable ROM Scan PDF
    F10416DC Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    F10416FC Fairchild Semiconductor 256 x 4-Bit Programmable ROM Scan PDF
    F10416PC Fairchild Semiconductor 256 x 4-Bit Programmable ROM Scan PDF

    F1041 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: WT-F1041SP Side View Chip LED Product Specifications Specification IV Material Quantity Cool White:1700~2250 mcd O @20mA/ Ta= 25 ;Tolerance: + 10% Correlated Color As page 6 & 4 & 5 O Temperature @20mA/ Ta= 25 C;Tolerance: + 0.005 Vf Cool White:2.8~3.4 V 0.1V/Bin


    Original
    PDF WT-F1041SP 81-1A 220x240mm 1000pcs 30sec. 11-Dec-2013

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original
    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    F10415

    Abstract: No abstract text available
    Text: F10415 1024 X 1-Bit Static Random Access Memory F A IR C H IL D A Schlumberger Company F100K ECL Product Description The F10415 is a 1024-bit read/write Random Access Memory RAM , organized as 1024 words by one bit per word and designed lo r high-speed scratchpad, control


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    PDF F10415 F100K 16-Pin 1024-bit F10415 4096-Word

    Untitled

    Abstract: No abstract text available
    Text: A S c h lu m b e rg e r C o m p a n y F10414 256 x 1-Bit Static Random Access M em ory B ipolar Division F10K ECL Product Description The F10414 is a 256-bit read/w rite Random Access M em ory RAM , organized 256 w ords by one bit. It is designed for high-speed scratchpad, control and buffer


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    PDF F10414 16-Pin 256-bit F10414 4096-Word

    Untitled

    Abstract: No abstract text available
    Text: ECL ISOPLANAR MEMORY F10410 256x1-BIT FULLY DECODED RANDOM ACCESS MEMORY FAIRCHILD VOLTAGE COMPENSATED ECL G E N E R A L D E S C R IP T IO N — The F 1 0 4 1 0 is a 2 5 6 -b it R e a d /W rite Random Access M em ory, organized 25 6 w ord s by one bit. It has typical access tim e o f 18 ns and is


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    PDF F10410 256x1-BIT F1041 F10405,

    EC-N023

    Abstract: No abstract text available
    Text: NOTES: UNLESS OTHERWISE SPECIFIED, TOLERANCES ARE 0.015” [.3 8 ' mm -0.010” [.254m m ~ .040 1,02m m F .030 [ 0 .7 6 m m _ .1 60 [ 4 .0 6 m m _ 0.09m m 0.06m m B EN#06-F1041 A ECN#02314 DESCRIPTION DRAWN C .230 [5.84m m .150 MIN [3.81 m m REV. REV. .350


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    PDF 82-7187TC 06-F1041 2Y194 82-7187TC EC-N023

    PM16C

    Abstract: I00416
    Text: F10416 / F100416 ECL ISOPLANAR MEMORY 2 5 6 x4 -B IT P R O G R A M M A B L E READ ONLY MEMORY DESCRIPTION - The F10416 and F100416 are fully decoded high speed 1024-bit j field Programmable Read Only Memories, organized 256 words by four bits. The FIQ^Wfi'


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    PDF F10416 F100416 F100416 1024-bit F100K PM16C I00416

    TE1312

    Abstract: No abstract text available
    Text: ECL ISOPLANAR MEMORY F10414 256 x 1-BIT FULLY DECODED RANDOM ACCESS MEMORY F A I R C H I L D V O L T A G E C O M P E N S A T E D ECL GENERAL DESCRIPTION - The F10414 is a 256-bit Read/Write random access M em ­ ory, organized 256 words by one bit. It has typical access time of 7 ns and is designed


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    PDF F10414 F10414 256-bit 16-pin TE1312

    1117 fairchild

    Abstract: No abstract text available
    Text: ECL ISOPLANAR MEMORY F10411 256x1—BIT FULLY DECODED RANDOM ACCESS MEMORY FAIRCHILD VOLTAGE COMPENSATED ECL G E N E R A L D E S C R IP T IO N - The F10411 is a lo w voltage 2 5 6 -b it R e a d /W rite R an­ dom Access M em ory, organized 2 5 6 w ord s by one bit. It has a 2 0 ns typical access tim e


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    PDF F10411 256x1--BIT F10411 1117 fairchild

    Untitled

    Abstract: No abstract text available
    Text: A Schlumberger Company F10415 1024 x 1-Bit Static Random Access Memory Flof-4'T Memory and High Speed Logic Description The F10415 is a 1024-bit read/write Random Access Memory RAM , organized as 1024 words by one bit per word and designed for high-speed scratchpad, control


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    PDF F10415 16-Pin 1024-bit F10415 4096-Word

    Untitled

    Abstract: No abstract text available
    Text: ECL ISOPLANAR MEMORY F10415 / F10415A 1024xl-BIT FULLY DECODED RANDOM ACCESS MEMORY F A IR C H IL D VOLTAGE C O M P E N S A T E D ECL G E N E R A L D E S C R I P T I O N - T he F 1 0 4 1 5 and F 1 0 4 1 5 A are 1024-bit Read/W rite R a n d o m Access M em ories organized 1 0 2 4 w ord s b y one bit. T h e y are designed fo r high speed scratch pad, con trol and


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    PDF F10415 F10415A 1024xl-BIT 1024-bit F10415/F10415A

    F10405

    Abstract: F10411
    Text: ECL ISOPLANAR MEMORY F10411 256x1— BIT FULLY DECODED RANDOM ACCESS MEMORY FAIRCHILD VOLTAGE COMPENSATED ECL G E N E R A L D E S C R IP T IO N - Th e F10 41 1 is a low voltage 256-b it R ead /W rite R a n ­ dom A c c e ss M em ory, organized 2 5 6 w o rd s by one bit. It h as a 2 0 ns typical a c c e ss time


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    PDF F10411 256x1â F10411 256-bit 16-pin F10405, F10405

    Untitled

    Abstract: No abstract text available
    Text: F10416 256 x 4-Bit Programmable Read Only Memory F10K ECL Product Connection Diagram Description The F10416 is a 1024-bit field Program m able Read O nly M em ory PROM , organized 256 w ords by fo u r bits per w ord. It is designed fo r high-speed control, m apping,


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    PDF F10416 1024-bit

    F10410

    Abstract: No abstract text available
    Text: ECL ISOPLANAR MEMORY F10410 256xl-BIT FULLY DECODED RANDOM ACCESS MEMORY FAIRCHILD VOLTAGE COMPENSATED ECL G E N E R A L D ESC R IPTIO N - The F10410 is a 2 5 6 -b it Read/W rite Random Access Mem­ ory, organized 256 w ords by one b it. It has ty p ic a l access tim e o f 18 ns and is designed


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    PDF F10410 256xl-BIT F10410 16-pin

    F10170

    Abstract: F10414
    Text: A S c h lu m b e rg e r C o m p a n y F10414 256 x 1-Bit Static Random Access Memory B ip o la r D iv is io n F10K E C L P ro d u c t Description T h e F10414 is a 2 5 6 -b it re a d /w rite R and om A ccess M e m o ry R A M , o rg a n iz e d 256 w o rd s b y o n e bit. It is


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    PDF F10414 F10414 256-bit 16-Pin 4096-Word F10170

    f10416

    Abstract: No abstract text available
    Text: F10416 256 x 4-Bit Programmable Read Only Memory F10K ECL Product Description T he F10416 is a 1024-bit field Program m able Read O nly M em ory PROM , organized 256 words by fo u r bits per w ord. It Is designed fo r high-speed control, m apping, code conversion, and logic replacem ent. The device


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    PDF F10416 1024-bit Time-20

    F10415

    Abstract: No abstract text available
    Text: F10415 1 0 2 4 x 1 -Bit Static Random Access Memory FAIRCHILD A S chlu m b erger C om pany F100K ECL Product Description The F10415 is a 1024-bit read/w rite Random Access M em ory RAM , organized as 1024 w ords by one bit per word and designed fo r high-speed scratchpad, control


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    PDF F10415 F100K 16-Pin 1024-bit F10415 4096-Word

    a2c33

    Abstract: No abstract text available
    Text: ECL ISOPLANAR MEMORY F10411 256x1—BIT FULLY DECODED RANDOM ACCESS MEMORY FAIRCHILD VOLTAGE COMPENSATED ECL GENERAL DESCRIPTION - The F10411 is a low voltage 256-bit Read/Write Ran­ dom Access Memory, organized 256 words by one bit. It has a 20 ns typical access time


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    PDF F10411 256x1--BIT F10411 256-bit 16-pin F10405, a2c33

    HM10414

    Abstract: HM10414-1
    Text: H M l 4 1 4 , H M l 4 1 4 - 1 2 5 6 -word x 1-bit Fully Decoded Random Access Memory The HM10414 is E C L 10K com patible, 256-word x 1-bit, read w rite, random access m em ory developed fo r high speed systems such as scratch pad and control/buffer storages.


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    PDF HM10414, HM10414-1 256-word HM10414 cerdip-16pin F10414. HM10414: HM10414-1: HM10414-1

    CK 66 UL 94V-0 LCD

    Abstract: unimax FA5508 CK 99 UL 94V-0 LCD lcd CK 66 UL 94V-0 unimax switch series 9 marking 4c7e a2231 unimax of thumbwheel switch E42363
    Text: For Orders/Service Call: 1-800-334-7729 & 919 553-3131 JU k ' In NC IB CLAYTON DIVISION PRODUCTS A complete line of switchlock, rotary, slide, rocker, lever, and pushbutton switches Catalog No. C8909 SEE W H A T’S NEW INSIDE . Look w hat’s new at C&K CLAYTON DIVISION! See the pages noted below for


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    PDF C8909 prob31, CK 66 UL 94V-0 LCD unimax FA5508 CK 99 UL 94V-0 LCD lcd CK 66 UL 94V-0 unimax switch series 9 marking 4c7e a2231 unimax of thumbwheel switch E42363

    74s188 programming

    Abstract: 74S471 N82S06 74S470 dip18 package str 52100 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 74S472 PROM PROGRAMMING 8080a 74S287 programming instructions
    Text: The E ngineering Staff of TEXAS INSTRUMENTS INCORPORATED Semiconductor Memory Data Book y for \ T exas In Design Engineers s t r u m e n t s >le of Contents • Alphanumeric Index • GENERAL INFORMATION Selection Guides • Glossary INTERCHANGEABILITY GUIDE


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    PDF 38510/MACH MIL-M-38510 74s188 programming 74S471 N82S06 74S470 dip18 package str 52100 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 74S472 PROM PROGRAMMING 8080a 74S287 programming instructions

    HN462532G

    Abstract: HN462732G HN4827128G-25 6116ALSP-15 482732AG 6116LP 613128P HM4816AP4 6116ALP-10 HM4816AP-4
    Text: \ HITACHI IC MEMORY DATA BOOK 0 HITACHI 1 IN D EX • • • • • • Q U IC K R E F E R E N C E G U ID E TO H IT A C H I IC M EM O R IES . 8 MOS R A M .


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEM ICO N D U CTO R TECHNICAL DATA MCM10144 MECL 256 x 1-BIT RANDOM ACCESS MEMORY The Access address data in 256 X 1-BIT R A N D O M ACCESS M EM ORY M C M 10144 is a 256 w ord x 1-bit Read/Write Random M em ory. Data is accessed or stored b y means o f an 8-bit


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    PDF MCM10144

    r-14 1870

    Abstract: No abstract text available
    Text: FUJITSU M ICROELECTRONICS. INC. MBML0415AH , n\ ioif^ ECL 1024-BIT BIPOLAR RANDOM ACCESS MEMORY DESCRIPTION Doped Polysilicon , as well as IOP (Isolation by Oxide and Poly­ silicon) processing. As a result, very fast access time with high yields and outstanding device


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    PDF 1024-BIT MBM10415AH MBML0415AH MBM10415AH r-14 1870