F1041 Search Results

F10415

Contextual Info: F10415 1024 X 1-Bit Static Random Access Memory F A IR C H IL D A Schlumberger Company F100K ECL Product Description The F10415 is a 1024-bit read/write Random Access Memory RAM , organized as 1024 words by one bit per word and designed lo r high-speed scratchpad, control

Contextual Info: A S c h lu m b e rg e r C o m p a n y F10414 256 x 1-Bit Static Random Access M em ory B ipolar Division F10K ECL Product Description The F10414 is a 256-bit read/w rite Random Access M em ory RAM , organized 256 w ords by one bit. It is designed for high-speed scratchpad, control and buffer

Contextual Info: ECL ISOPLANAR MEMORY F10410 256x1-BIT FULLY DECODED RANDOM ACCESS MEMORY FAIRCHILD VOLTAGE COMPENSATED ECL G E N E R A L D E S C R IP T IO N — The F 1 0 4 1 0 is a 2 5 6 -b it R e a d /W rite Random Access M em ory, organized 25 6 w ord s by one bit. It has typical access tim e o f 18 ns and is

EC-N023

Contextual Info: NOTES: UNLESS OTHERWISE SPECIFIED, TOLERANCES ARE 0.015” [.3 8 ' mm -0.010” [.254m m ~ .040 1,02m m F .030 [ 0 .7 6 m m _ .1 60 [ 4 .0 6 m m _ 0.09m m 0.06m m B EN#06-F1041 A ECN#02314 DESCRIPTION DRAWN C .230 [5.84m m .150 MIN [3.81 m m REV. REV. .350

PM16C

Abstract: I00416
Contextual Info: F10416 / F100416 ECL ISOPLANAR MEMORY 2 5 6 x4 -B IT P R O G R A M M A B L E READ ONLY MEMORY DESCRIPTION - The F10416 and F100416 are fully decoded high speed 1024-bit j field Programmable Read Only Memories, organized 256 words by four bits. The FIQ^Wfi'

TE1312

Contextual Info: ECL ISOPLANAR MEMORY F10414 256 x 1-BIT FULLY DECODED RANDOM ACCESS MEMORY F A I R C H I L D V O L T A G E C O M P E N S A T E D ECL GENERAL DESCRIPTION - The F10414 is a 256-bit Read/Write random access M em ­ ory, organized 256 words by one bit. It has typical access time of 7 ns and is designed

1117 fairchild

Contextual Info: ECL ISOPLANAR MEMORY F10411 256x1—BIT FULLY DECODED RANDOM ACCESS MEMORY FAIRCHILD VOLTAGE COMPENSATED ECL G E N E R A L D E S C R IP T IO N - The F10411 is a lo w voltage 2 5 6 -b it R e a d /W rite R an­ dom Access M em ory, organized 2 5 6 w ord s by one bit. It has a 2 0 ns typical access tim e

Contextual Info: A Schlumberger Company F10415 1024 x 1-Bit Static Random Access Memory Flof-4'T Memory and High Speed Logic Description The F10415 is a 1024-bit read/write Random Access Memory RAM , organized as 1024 words by one bit per word and designed for high-speed scratchpad, control

Contextual Info: ECL ISOPLANAR MEMORY F10415 / F10415A 1024xl-BIT FULLY DECODED RANDOM ACCESS MEMORY F A IR C H IL D VOLTAGE C O M P E N S A T E D ECL G E N E R A L D E S C R I P T I O N - T he F 1 0 4 1 5 and F 1 0 4 1 5 A are 1024-bit Read/W rite R a n d o m Access M em ories organized 1 0 2 4 w ord s b y one bit. T h e y are designed fo r high speed scratch pad, con trol and

F10405

Abstract: F10411
Contextual Info: ECL ISOPLANAR MEMORY F10411 256x1— BIT FULLY DECODED RANDOM ACCESS MEMORY FAIRCHILD VOLTAGE COMPENSATED ECL G E N E R A L D E S C R IP T IO N - Th e F10 41 1 is a low voltage 256-b it R ead /W rite R a n ­ dom A c c e ss M em ory, organized 2 5 6 w o rd s by one bit. It h as a 2 0 ns typical a c c e ss time

Contextual Info: F10416 256 x 4-Bit Programmable Read Only Memory F10K ECL Product Connection Diagram Description The F10416 is a 1024-bit field Program m able Read O nly M em ory PROM , organized 256 w ords by fo u r bits per w ord. It is designed fo r high-speed control, m apping,

F10410

Contextual Info: ECL ISOPLANAR MEMORY F10410 256xl-BIT FULLY DECODED RANDOM ACCESS MEMORY FAIRCHILD VOLTAGE COMPENSATED ECL G E N E R A L D ESC R IPTIO N - The F10410 is a 2 5 6 -b it Read/W rite Random Access Mem­ ory, organized 256 w ords by one b it. It has ty p ic a l access tim e o f 18 ns and is designed

F10410

Abstract: F10410DC F10405 fairchild ECL
Contextual Info: ECL ISOPLANAR MEMORY F10410 256xl-BIT FULLY DECODED RANDOM ACCESS MEMORY FAIRCHILD VOLTAGE COMPENSATED ECL G E N E R A L D E S C R IP T IO N The F 1 041 0 is a 2 5 6 -b it R e a d /W rite Random Access M em ory, organized 256 w ord s by one bit. It has typical access tim e of 18 ns and is

F10170

Abstract: F10414
Contextual Info: A S c h lu m b e rg e r C o m p a n y F10414 256 x 1-Bit Static Random Access Memory B ip o la r D iv is io n F10K E C L P ro d u c t Description T h e F10414 is a 2 5 6 -b it re a d /w rite R and om A ccess M e m o ry R A M , o rg a n iz e d 256 w o rd s b y o n e bit. It is

f10416

Contextual Info: F10416 256 x 4-Bit Programmable Read Only Memory F10K ECL Product Description T he F10416 is a 1024-bit field Program m able Read O nly M em ory PROM , organized 256 words by fo u r bits per w ord. It Is designed fo r high-speed control, m apping, code conversion, and logic replacem ent. The device

F10415

Contextual Info: F10415 1 0 2 4 x 1 -Bit Static Random Access Memory FAIRCHILD A S chlu m b erger C om pany F100K ECL Product Description The F10415 is a 1024-bit read/w rite Random Access M em ory RAM , organized as 1024 w ords by one bit per word and designed fo r high-speed scratchpad, control

a2c33

Contextual Info: ECL ISOPLANAR MEMORY F10411 256x1—BIT FULLY DECODED RANDOM ACCESS MEMORY FAIRCHILD VOLTAGE COMPENSATED ECL GENERAL DESCRIPTION - The F10411 is a low voltage 256-bit Read/Write Ran­ dom Access Memory, organized 256 words by one bit. It has a 20 ns typical access time

HM10414

Abstract: HM10414-1
Contextual Info: H M l 4 1 4 , H M l 4 1 4 - 1 2 5 6 -word x 1-bit Fully Decoded Random Access Memory The HM10414 is E C L 10K com patible, 256-word x 1-bit, read w rite, random access m em ory developed fo r high speed systems such as scratch pad and control/buffer storages.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

CK 66 UL 94V-0 LCD

Abstract: unimax FA5508 CK 99 UL 94V-0 LCD lcd CK 66 UL 94V-0 unimax switch series 9 marking 4c7e a2231 unimax of thumbwheel switch E42363
Contextual Info: For Orders/Service Call: 1-800-334-7729 & 919 553-3131 JU k ' In NC IB CLAYTON DIVISION PRODUCTS A complete line of switchlock, rotary, slide, rocker, lever, and pushbutton switches Catalog No. C8909 SEE W H A T’S NEW INSIDE . Look w hat’s new at C&K CLAYTON DIVISION! See the pages noted below for

74s188 programming

Abstract: 74S471 N82S06 74S470 dip18 package str 52100 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 74S472 PROM PROGRAMMING 8080a 74S287 programming instructions
Contextual Info: The E ngineering Staff of TEXAS INSTRUMENTS INCORPORATED Semiconductor Memory Data Book y for \ T exas In Design Engineers s t r u m e n t s >le of Contents • Alphanumeric Index • GENERAL INFORMATION Selection Guides • Glossary INTERCHANGEABILITY GUIDE

HN462532G

Abstract: HN462732G HN4827128G-25 6116ALSP-15 482732AG 6116LP 613128P HM4816AP4 6116ALP-10 HM4816AP-4
Contextual Info: \ HITACHI IC MEMORY DATA BOOK 0 HITACHI 1 IN D EX • • • • • • Q U IC K R E F E R E N C E G U ID E TO H IT A C H I IC M EM O R IES . 8 MOS R A M .

Contextual Info: MOTOROLA SEM ICO N D U CTO R TECHNICAL DATA MCM10144 MECL 256 x 1-BIT RANDOM ACCESS MEMORY The Access address data in 256 X 1-BIT R A N D O M ACCESS M EM ORY M C M 10144 is a 256 w ord x 1-bit Read/Write Random M em ory. Data is accessed or stored b y means o f an 8-bit

r-14 1870

Contextual Info: FUJITSU M ICROELECTRONICS. INC. MBML0415AH , n\ ioif^ ECL 1024-BIT BIPOLAR RANDOM ACCESS MEMORY DESCRIPTION Doped Polysilicon , as well as IOP (Isolation by Oxide and Poly­ silicon) processing. As a result, very fast access time with high yields and outstanding device