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    F24.6 PACKAGE Search Results

    F24.6 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    F24.6 PACKAGE Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    F24.6 Package Intersil 24 LEAD CERAMIC DUAL-IN-LINE FRIT SEAL PACKAGE Original PDF

    F24.6 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    GDIP1-T24

    Abstract: diode s1 77 F24.6 Package
    Text: Hermetic Packages for Integrated Circuits Ceramic Dual-In-Line Frit Seal Packages CERDIP F24.6 MIL-STD-1835 GDIP1-T24 (D-3, CONFIGURATION A) LEAD FINISH c1 24 LEAD CERAMIC DUAL-IN-LINE FRIT SEAL PACKAGE -D- -A- BASE METAL E M -Bbbb S C A-B S -C- S1 0.225


    Original     		MIL-STD-1835 GDIP1-T24 GDIP1-T24 diode s1 77 F24.6 Package PDF

    F24.6 Package

    Abstract: GDIP1-T24
    Text: Ceramic Package Ceramic Dual-In-Line Frit Seal Packages CERDIP c1 F24.6 MIL-STD-1835 GDIP1-T24 (D-3, CONFIGURATION A) LEAD FINISH 24 LEAD CERAMIC DUAL-IN-LINE FRIT SEAL PACKAGE -D- -A- BASE METAL INCHES (c) E b1 M M (b) -Bbbb S C A-B S SECTION A-A D S D


    Original     		MIL-STD-1835 GDIP1-T24 F24.6 Package GDIP1-T24 PDF

    HM-6516-9

    Abstract: 8403601ja 29102BJA 8403601ZA 8403607JA 8403607ZA HM1-6516-9 HM1-6516B-9 HM4-6516-9 HM-6516
    Text: HM-6516 S E M I C O N D U C T O R 2K x 8 CMOS RAM March 1997 Features Description • Low Power Standby . . . . . . . . . . . . . . . . . . . 275µW Max The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the


    Original     		HM-6516 HM-6516 55mW/MHz HM-6516-9 8403601ja 29102BJA 8403601ZA 8403607JA 8403607ZA HM1-6516-9 HM1-6516B-9 HM4-6516-9 PDF

    HM-6516-9

    Abstract: 8403601ja F24.6 Package HM1-6516B-9 29102BJA 8403601ZA 8403607JA 8403607ZA HM1-6516-9 HM4-6516-9
    Text: HM-6516 2K x 8 CMOS RAM March 1997 Features Description • Low Power Standby . . . . . . . . . . . . . . . . . . . 275µW Max The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of complementary MOS design techniques. This low


    Original     		HM-6516 HM-6516 55mW/MHz HM-6516-9 8403601ja F24.6 Package HM1-6516B-9 29102BJA 8403601ZA 8403607JA 8403607ZA HM1-6516-9 HM4-6516-9 PDF

    8403602ZA

    Abstract: 8403602JA 8403606JA 65162 29104BJA 29110BJA 8403606ZA HM1-65162-9 HM1-65162B-9 HM4-65162-9
    Text: HM-65162 TM 2K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time . . . . . . . . . . . . . . . . . . . 70/90ns Max The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced SAJI V


    Original     		HM-65162 70/90ns HM-65162 8403602ZA 8403602JA 8403606JA 65162 29104BJA 29110BJA 8403606ZA HM1-65162-9 HM1-65162B-9 HM4-65162-9 PDF

    8403602JA

    Abstract: 8403606JA 29104BJA 29110BJA 8403606ZA HM1-65162-9 HM1-65162B-9 HM4-65162-9 HM4-65162B-9 HM-65162
    Text: HM-65162 2K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/90ns Max The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced SAJI V


    Original     		HM-65162 70/90ns HM-65162 8403602JA 8403606JA 29104BJA 29110BJA 8403606ZA HM1-65162-9 HM1-65162B-9 HM4-65162-9 HM4-65162B-9 PDF

    a5324

    Abstract: 8403601ja 29102BJA 8403601ZA 8403607JA 8403607ZA HM1-6516-9 HM1-6516B-9 HM4-6516-9 HM-6516
    Text: HM-6516 TM 2K x 8 CMOS RAM March 1997 Features Description • Low Power Standby. . . . . . . . . . . . . . . . . . . 275µW Max The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of complementary MOS design techniques. This low


    Original     		HM-6516 HM-6516 55mW/MHz a5324 8403601ja 29102BJA 8403601ZA 8403607JA 8403607ZA HM1-6516-9 HM1-6516B-9 HM4-6516-9 PDF

    8403602JA

    Abstract: 8403606JA 29104BJA 29110BJA 8403606ZA HM1-65162-9 HM1-65162B-9 HM4-65162-9 HM4-65162B-9 HM-65162
    Text: HM-65162 S E M I C O N D U C T O R 2K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/90ns Max The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Harris Advanced SAJI V


    Original     		HM-65162 70/90ns HM-65162 8403602JA 8403606JA 29104BJA 29110BJA 8403606ZA HM1-65162-9 HM1-65162B-9 HM4-65162-9 HM4-65162B-9 PDF

    relay ttl input 12v output

    Abstract: HC1-5504B-5 HC1-5504B-9 HC3-5504B-5 HC3-5504B-9 HC4P5504B-5 HC4P5504B-9 HC-5504 HC-5504B HC9P5504B-5
    Text: HC-5504B S E M I C O N D U C T O R SLIC Subscriber Line Interface Circuit June 1996 Features Description • Pin for Pin Replacement for the HC-5504 The Harris SLIC incorporates many of the BORSHT functions on a single IC chip. This includes DC battery feed, a ring relay


    Original     		HC-5504B HC-5504 1-800-4-HARRIS relay ttl input 12v output HC1-5504B-5 HC1-5504B-9 HC3-5504B-5 HC3-5504B-9 HC4P5504B-5 HC4P5504B-9 HC-5504 HC-5504B HC9P5504B-5 PDF

    QD36

    Abstract: HC4p-5504B-5
    Text: HC-5504B S E M I C O N D U C T O R SLIC Subscriber Line Interface Circuit January 1997 Features Description • • • • • The Harris SLIC incorporates many of the BORSHT functions on a single IC chip. This includes DC battery feed, a ring relay driver, supervisory and hybrid functions. This device is


    Original     		HC-5504B 1-800-4-HARRIS QD36 HC4p-5504B-5 PDF

    HC3-5502B-5

    Abstract: HC4P5502B-5 HC-5502B HC9P5502B-5 HC1-5502B-5 HC1-5502B-9 HC4P5502B GS324
    Text: HC-5502B S E M I C O N D U C T O R SLIC Subscriber Line Interface Circuit June 1996 Features Description • Pin For Pin Replacement For The HC-5502A The Harris SLIC incorporates many of the BORSHT function on a single IC chip. This includes DC battery feed, a ring relay driver,


    Original     		HC-5502B HC-5502A 1-800-4-HARRIS HC3-5502B-5 HC4P5502B-5 HC-5502B HC9P5502B-5 HC1-5502B-5 HC1-5502B-9 HC4P5502B GS324 PDF

    Untitled

    Abstract: No abstract text available
    Text: HM-6516 HARRIS S S E M I C O N D U C T O R 2K x 8 CMOS RAM August 1996 Description Features • The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of complementary MOS design techniques. This low


    OCR Scan     		HM-6516 HM-6516 M3D2271 bfi275 PDF

    HC-5502A

    Abstract: 5502a harris 5502A
    Text: HC-5502B Semiconductor D a ta S h e e t F e b ru a ry 1999 F ile N u m b e r EIA/ITU PABX SLIC with 30mA Loop Feed Features The Harris SLIC incorporates many of the BORSHT functions on a single 1C chip. This includes DC battery feed, a ring relay driver, supervisory and hybrid functions. This


    OCR Scan     		HC-5502B AN571, HC-5502A HC-5504 1-800-4-HARRIS 5502a harris 5502A PDF

    6516

    Abstract: 6516-9
    Text: HM-6516 Semiconductor 2K March 1997 X 8 CMOS RAM Features Description • Low Power Standby. 275^W Max The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of com plem entary MOS design techniques. This low


    OCR Scan     		HM-6516 HM-6516 6516 6516-9 PDF

    HM6516

    Abstract: No abstract text available
    Text: HM-6516 fü HARRIS S E M I C O N D U C T O R 2K x 8 CMOS RAM March 1997 Description Features Low Power Standby. 2 7 5 Max Low Power O p e ratio n . 55mW/MHz Max Fast Access Time. . 120/200ns Max


    OCR Scan     		HM-6516 55mW/MHz 120/200ns HM-6516 HM6516 PDF

    L1129

    Abstract: HM1-6516B-9 8403601ja 29102BJA 8403607JA 8403607ZA HM-6516 HM-6516-9 HM1-6516
    Text: HM-6516 HARRIS æ S E M I C O N D U C T O R 2K March 1997 X 8 CMOS RAM Features Description • Low Power S tan db y. 275|aW Max • Low Power O p e ra tio n . 55mW /MHz Max • Fast Access T im e. 120/200ns Max


    OCR Scan     		HM-6516 275nW 55mW/MHz 120/200ns HM-6516 L1129 HM1-6516B-9 8403601ja 29102BJA 8403607JA 8403607ZA HM-6516-9 HM1-6516 PDF

    Untitled

    Abstract: No abstract text available
    Text: lHARRIS a H S E M I C O N D U C T O R M - 6 5 1 6 2 2K x 8 Asynchronous CMOS Static RAM August 1996 Features Description • Fast Access T im e. 70/90ns Max T he H M -6 5 1 62 is a C M O S 2 0 4 8 x 8 Static Random Access


    OCR Scan     		70/90ns 4302E71 0Gbfl337 HM-65162 PDF

    8403602JA

    Abstract: 8403606JA
    Text: HM-65162 Semiconductor 2K x 8 Asynchronous CMOS Static RAM March 1997 Description Features • Fast Access Time. 70/90ns Max • Low Standby Max • Low Operating C u rren t. 70mA Max


    OCR Scan     		HM-65162 HM-65162 8403602JA 8403606JA PDF

    EH18

    Abstract: HM-6516-9 hm6516-9
    Text: HARRIS H M -6 5 1 6 S E M I C O N D U C T O R 2K March 1997 X 8 CMOS RAM Features Description • Low Power Standby. 275|iW Max The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the


    OCR Scan     		HM-6516 HM-6516 EH18 HM-6516-9 hm6516-9 PDF

    8403602JA

    Abstract: 8403606JA chip diagram of ram chip 6116 29104BJA 29110BJA 8403603JA HM-65162 a651
    Text: HM-65162 HARRIS S E M I C O N D U C T O R 2K x 8 Asynchronous CMOS Static RAM M a rc h 1 9 9 7 Features Description • Fast Access Time. 70/90ns Max • Low Standby Max


    OCR Scan     		HM-65162 70/90ns HM-65162 T777777777A 8403602JA 8403606JA chip diagram of ram chip 6116 29104BJA 29110BJA 8403603JA a651 PDF

    65162C

    Abstract: 8403602JA 8403606JA
    Text: HM-65162 fü HARRIS S E M I C O N D U C T O R 2K x 8 Asynchronous CMOS Static RAM M arch 1997 Features Description Fast Access Time. 70/90ns Max T h e H M -6 5 162 is a C M O S 20 48 x 8 S tatic Random A ccess M em o ry m an ufacture d using the H a rris A d va n ce d SAJI V


    OCR Scan     		HM-65162 65162C 8403602JA 8403606JA PDF

    HC5504B

    Abstract: 5504b
    Text: HC-5504B Semiconductor EIA/ITU PABX SLIC with 40mA Loop Feed Features Description • Pin for Pin Replacement for the HC-5504 The Harris SLIC incorporates many of the B O R SH T functions on a single IC chip. This includes DC battery feed, a ring relay driver, supervisory and hybrid functions. This device is


    OCR Scan     		HC-5504B HC-5504 MIL-STD-1835 GDIP1-T24 HC5504B 5504b PDF

    Untitled

    Abstract: No abstract text available
    Text: HC-5504B HARRIS S E M I C O N D U C T O R SLIC Subscriber Line Interface Circuit January 1997 Description Features The Harris SLIC incorporates many of the B O R SH T functions on a single IC chip. This includes DC battery feed, a ring relay driver, supervisory and hybrid functions. This device is


    OCR Scan     		HC-5504B HC-5504 1-800-4-HARRIS PDF

    Untitled

    Abstract: No abstract text available
    Text: HC-5502B HARRIS S E M I C O N D U C T O R s u e Subscriber Line Interface Circuit June 1996 Features Description • Pin For Pin Replacement For The HC-5502A The Harris SLIC incorporates many of the BORSHT function on a single IC chip. This indudes DC battery feed, a ring relay driver,


    OCR Scan     		HC-5502B HC-5502A 5M-1982. 00bb750 43G2271 PDF