F27D Search Results

F27D Result Highlights (5)

Part	Manufacturer	Description
RJU65F27DWT-00#X0	Renesas Electronics Corporation	Fast Recovery Diodes
RJU65F27DWA-00#W0	Renesas Electronics Corporation	High-performance Fast Recovery Diodes with Low VF and High-speed trr for Increasing Device Efficiency
RJU65F27DWS-00#W0	Renesas Electronics Corporation	Fast Recovery Diodes
SN74F27DR	Texas Instruments	Triple 3-input positive-NOR gates 14-SOIC 0 to 70
SN74F27D	Texas Instruments	Triple 3-input positive-NOR gates 14-SOIC 0 to 70

F27D Price and Stock

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Texas Instruments SN74F27DR IC GATE NOR 3CH 3-INP 14SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SN74F27DR	Digi-Reel	1,993		1	1 $0.38 10 $0.263 100 $0.2025 1000 $0.17054 10000 $0.17054	Buy Now
	SN74F27DR	Cut Tape	1,993		1	1 $0.38 10 $0.263 100 $0.2025 1000 $0.17054 10000 $0.17054	Buy Now
	SN74F27DR	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.16256	Buy Now
Mouser Electronics	SN74F27DR					1 $0.38 10 $0.235 100 $0.188 1000 $0.171 10000 $0.151	Get Quote
Bristol Electronics	SN74F27DR		1,560			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	SN74F27DR		9,603		1	1 $0.1542 10 $0.1542 100 $0.1449 1000 $0.1311 10000 $0.1311	Buy Now
ComSIT USA	SN74F27DR		6,831			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Texas Instruments SN74F27D IC GATE NOR 3CH 3-INP 14SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SN74F27D	Tube	1,698		1	1 $1.04 10 $0.747 100 $0.5947 1000 $0.51483 10000 $0.51483	Buy Now
Bristol Electronics	SN74F27D		3,073			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	SN74F27D		495			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	SN74F27D		70,542		1	1 $0.4861 10 $0.4861 100 $0.4569 1000 $0.4132 10000 $0.4132	Buy Now
Adam Technologies Inc PLF-27D1-3A-W LINE FILTER 115V/250VAC 3A CHASS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PLF-27D1-3A-W	Tray	197		1	1 $19.72 10 $16.09 100 $13.1306 1000 $12 10000 $12	Buy Now
Mouser Electronics	PLF-27D1-3A-W					1 - 10 - 100 - 1000 $13.48 10000 $13.48	Get Quote
RS	PLF-27D1-3A-W	Bulk		12 Weeks	200	1 - 10 - 100 - 1000 $17.4 10000 $17.4	Get Quote
Samtec Inc ISDF-27-D CONN INSULATOR HSG 54POS 1.27MM Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ISDF-27-D	Bulk			1	1 $3.85 10 $3.85 100 $3.85 1000 $3.85 10000 $3.85	Buy Now
Avnet Americas	ISDF-27-D	Tube			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	ISDF-27-D					1 $4.24 10 $3.6 100 $3.6 1000 $3.15 10000 $2.7	Get Quote
Master Electronics	ISDF-27-D					1 - 10 - 100 $2.62 1000 $2.39 10000 $1.46	Buy Now
Sager	ISDF-27-D				1	1 $3.14 10 $3.14 100 $2.18 1000 $1.66 10000 $1.57	Buy Now
Rochester Electronics LLC SN74F27DR IC GATE NOR 3CH 3-INP 14SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SN74F27DR	Bulk			1,871	1 - 10 - 100 - 1000 - 10000 $0.16	Buy Now

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F27D Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: SILICON PIN DIODES Microwave applications ULTRAFAST SWITCHING SILICON PIN DIODES Description For ultrafast switching, these passivated mesa diodes have a thin I layer < 10 µm . Electrical characteristics CHIP AND PACKAGED DIODES CHIP DIODES Characteristics Gold Breakdown Junction	Original	EH50072 EH50073 EH50074 EH50075 EH50076 EH50077 EH50101 EH50102 EH50103 EH50104	PDF
018pF Abstract: No abstract text available Text: POWER GENERATION DIODES Step recovery diodes SRD STEP RECOVERY DIODES (S.R.D.) Description These diodes use mesa technology and oxide passivation. They support fast switching and multiplier applications: • very short pulse generation, • ultra fast waveform shaping,	Original	EH541 DH541 DH542 DH543 DH544 DH545 DH546 018pF	PDF
DH292 Abstract: No abstract text available Text: POWER GENERATION DIODES Silicon multiplier varactor SILICON MULTIPLIER VARACTORS Description These silicon multiplier varactors from 0.2 to 25 GHz are designed for harmonic generation of high power levels (stack configuration) and/or at high multiplication orders.	Original	DH294 DH200 DH270 DH110 DH293 DH252 DH256 DH292 DH267 M208b DH292	PDF
RSF 800 Abstract: F27D EH50151 DH50204 EH50204 DH50156 M208 Text: SILICON PIN DIODES Microwave applications FAST SWITCHING SILICON PIN DIODES Description For fast switching, these passivated mesa diodes have a medium I layer < 50 µm . Electrical characteristics CHIP DIODES L CHIP E AND C PACKAGED T R IDIODES C A E Characteristics Gold Breakdown Junction	Original	EH50151 EH50152 EH50153 EH50154 EH50155 EH50156 EH50157 EH50201 EH50202 EH50203 RSF 800 F27D DH50204 EH50204 DH50156 M208	PDF
STEP RECOVERY DIODES Abstract: EH542 EH546 Dh54 A22E M208 Text: POWER GENERATION DIODES Step recovery diodes SRD STEP RECOVERY DIODES (S.R.D.) Description These diodes use mesa technology and oxide passivation. They support fast switching and multiplier applications: • very short pulse generation, • ultra fast waveform shaping,	Original	EH541 EH542 EH543 EH544 EH545 EH546 STEP RECOVERY DIODES EH546 Dh54 A22E M208	PDF
DH294 Abstract: DH200 DH270 DH256 Dh252 varactor multiplier dh110 DH292 DH293 M208B Text: POWER GENERATION DIODES Silicon multiplier varactor SILICON MULTIPLIER VARACTORS Description These silicon multiplier varactors from 0.2 to 25 GHz are designed for harmonic generation of high power levels (stack configuration) and/or at high multiplication orders.	Original	DH294 DH200 DH270 DH110 DH293 DH252 DH256 DH292 DH267 M208b varactor multiplier	PDF
chip varactor Abstract: EH76150 varactor KU BAND EH76033 EH76015 Text: TUNING VARACTOR High Q silicon hyperabrupt junction tuning varactor HIGH Q SILICON HYPERABRUPT JUNCTION TUNING VARACTOR Description This series of silicon tuning varactors consists of hyperabrupt epitaxial devices. They incorporate a passivated mesa technology. Packaged or chip devices are available for linear electronic tuning from	Original	Ct1V/Ct12V Ct1V/CT20V DH76010 DH76015 DH76022 DH76033 DH76047 DH76068 DH76100 DH76150 chip varactor EH76150 varactor KU BAND EH76033 EH76015	PDF
bh32 Abstract: bH-36 M208D BMH76 M208A BH158AM BH147 Text: MICROWAVE SILICON COMPONENTS Case styles CASE STYLES SURFACE MOUNT DEVICES GENERAL PURPOSE STRIP LINE / M ICRO STRIP A22e SMD3 BH15 BH28 SMD4 BH16 BH32 SMD6 BH36 BH35 SMD8 BH100 BH142a SOD323 BH101 BH142b SOT23 BH143 BH142c SOT143 BH146 BH147 BH142d POWER	Original	BH142a BH142b BH142c BH142d BH142e BH142f BH165 BH165s BH167 BH167s bh32 bH-36 M208D BMH76 M208A BH158AM BH147	PDF
BH204N Abstract: BH403a M208D BH198 BH202N M208A Text: MICROWAVE SILICON COMPONENTS Case styles CASE STYLES SURFACE MOUNT DEVICES GENERAL PURPOSE STRIP LINE / MICRO STRIP PAGE PAGE PAGE A22e .12-48 SMD3 .12-56 BH15 .12-48 BH28 .12-48	Original	BH142a BH142b BH142c BH142d BH142e BH142f BH167 BH167s BH198 M208a BH204N BH403a M208D BH202N	PDF
DH80050 Abstract: DH80055-20 DH80050-40N DH80050-01 DH80055-20N DH80050-06N DH80080 DH80055 dh80082-06 DH80082-06N Text: Silicon Pin Diodes Switching Pin Diodes SWITCHING PIN DIODES Breakdown Voltage Vbr @ Ir = 10 A V Serie Resistance Rs @ F= 120 MHz Ω Capacitance @ F= 1 MHz Application pF Min. Typ. Max. @ Vr = 50V Package 1 Part Number Max. @ IF=200mA Min (µs) 500 High Power Switching	Original	BH202N BMH76 BH301 BH141 BH158AM EH80050-00 EH80051-00 DH80050-01 DH80050-40N DH80050 DH80055-20 DH80055-20N DH80050-06N DH80080 DH80055 dh80082-06 DH80082-06N	PDF
EH76150 die Abstract: DH252 DH256 all diodes ratings step recovery diode dh252 temex dh292 DH315 DH303 DH324 DH312 Text: SILICON MICROWAVE DIODES Step Recovery Diodes MICROWAVE SILICON MICROWAVE DIODES STEP RECOVERY DIODES All the detail specification shall be read in conjunction with ESA/SCC Generic Specification N° 5010, the special requirements are included in the detail specification.	Original	ESA/SCC5512/016 DH252 DH256 DH292 DH267 ESA/SCC5512/016 EH76150 die DH252 DH256 all diodes ratings step recovery diode dh252 temex dh292 DH315 DH303 DH324 DH312	PDF
Untitled Abstract: No abstract text available Text: TUNING VARACTOR High Q silicon abrupt junction tuning varactor HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR VBR 30 V Description This series of high Q epi-junction microwave tuning varactors 30 V incorporates a passivated mesa technology. It is well suited for frequency tuning applications up to Ku band.	Original	CTO/CT30 DH72820 DH72999 BH141 BH142	PDF
dh728 Abstract: DH71006 Tuning Varactors DH719 DH726 M208 Text: TUNING VARACTOR High Q silicon abrupt junction tuning varactor HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR VBR 30 V Description This series of high Q epi-junction microwave tuning varactors 30 V incorporates a passivated mesa technology. It is well suited for frequency tuning applications up to Ku band.	Original	EH71004 EH71006 EH71008 EH71010 EH71012 EH71016 EH71020 EH71025 EH71030 EH71037 dh728 DH71006 Tuning Varactors DH719 DH726 M208	PDF
dh200 Abstract: DH294 Dh252 DH270 f60D Text: POWER GENERATION DIODES Silicon multiplier varactor SILICON MULTIPLIER VARACTORS Description These silicon multiplier varactors from 0.2 to 25 GHz are designed for harmonic generation of high power levels (stack configuration) and/or at high multiplication orders.	Original	DH294 DH200 DH270 DH110 DH293 DH252 DH256 DH292 DH267 S268-W1 f60D	PDF

STK 2028 Abstract: HW 2596 STK 1262 stk 1264 FDCC 1602 stk 2265 F199 transistor TSX 07 31 1622 transistor f423 F487 transistor Text: Fri Jan 13 13:20:54 1995 Page 1 'W65C134 Internal ROM Monitor $F000 ' 'MON7.ASM - GENERAL LOOKUP TABLES' 2500 A.D. 65816 Macro Assembler - Version 5.01g -Input Filename : IMON.ASM Output Filename : IMON.OBJ 1	Original	W65C134 65C02 Hittel2818 STK 2028 HW 2596 STK 1262 stk 1264 FDCC 1602 stk 2265 F199 transistor TSX 07 31 1622 transistor f423 F487 transistor	PDF
MVP-100 Abstract: ROE EB STDX 8000 4614 inverter driver d947 DC-418 DSP56156 C-15 DSP56004 DSP56100 Text: TABLE OF CONTENTS Paragraph Number Title Page Number SECTION 1 DSP56156 OVERVIEW 1.1 1.2 1.2.1 1.2.2 1.2.3 1.2.4 1.2.5 1.2.5.1 1.2.5.2 1.2.5.3 1.3 1.4 1.4.1 1.4.2 1.4.3 1.4.4 1.4.5 1.5 1.6 1.6.1 1.6.1.1 1.6.1.2 1.6.2 1.6.2.1 1.6.2.2 1.6.2.3 1.6.3 1.6.3.1 INTRODUCTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	DSP56156 DSP56100 MVP-100 ROE EB STDX 8000 4614 inverter driver d947 DC-418 C-15 DSP56004	PDF
ge 6065 b Abstract: GE 6065 AH370 AH682 AH443 Thomson ah370 AH655 AH612 ah616 AH610 Text: AH365.AH380/AH443.AH802 GaAs GUNN P O W E R G E N E R A T I O N D I O D E S FEATURES O perating fre q u e n c y range 8 to 100G H z Low noise c ha racte ristics from 8 to 100G H z C a s e s ty le fle x ib ility : W 2, W 3, W 4, W 5, F27d, F60 . Em itting p o w e r : 10 to 400 m W	OCR Scan	AH365. AH380/AH443. AH802 ge 6065 b GE 6065 AH370 AH682 AH443 Thomson ah370 AH655 AH612 ah616 AH610	PDF
diode cross reference Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606 Text: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE	OCR Scan	MA40401 MA40402 MA40404 MA40405 MA40406 MA40408 diode cross reference schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606	PDF
ci 740 Abstract: 1C45 DH744 Text: SILICON TUNING VARACTORS This series o f high Q epi-junction m icrow ave tuning varactors 45 V incorporates a passivated mesa tech n olog y. It is well suited for fre q u e n cy tuning a pp lica tio ns up to X band. CHIP AND PACKAGED DIODES CHIP OIODES TUNING RATIO	OCR Scan		PDF
74008 Abstract: 74067 74004 74016 74220 c 74067 cI 74150 74470 ci 74390 74006 Text: •'<% SILICON TUNING VARACTORS / This series o f high tuning ratio e pi-ju nctio n m icro w a ve tuning varactors 90 V incorporates a passivated mesa te ch n o lo g y. It is well suited for fre q u e n cy tuning a p p lica tio n s up to L b an d . CHIP AND	OCR Scan		PDF
power 22E Abstract: No abstract text available Text: Typical applications of step recovery diodes include oscillators, power transmitter and drivers, for telecommunications, telemetry, radar and test equipment. In choosing an SRD, the significant characteristics include : O utput Frequency f0 ; Breakdown Voltage (VBR) ; Junction C apacitan ce (C j) ; Minority Carrier	OCR Scan	DH546 power 22E	PDF
Untitled Abstract: No abstract text available Text: SILICO N LIMITER PIN DIODES These passivated mesa PIN diodes have a thin I layer. This series of diodes is available as chips and in hermetic ceram ic packages. They operate as power dependent variable resistances and provi de passive receiver protection low noise amplifiers, mixers, and detectors ,	OCR Scan		PDF
M208 Abstract: No abstract text available Text: TEKELEC COMPONENTS bflE '10G37Ô7 000G232 3fl2 D PIN DIODES SILICON LIMITER PIN DIODES These passivated mesa PIN diodes have a thin I layer, This series of diodes is available as chips and in hermetic ceram ic packages. They operate as power dependent variable resistances and provide	OCR Scan	10G37 000G232 M208	PDF
73016 Abstract: No abstract text available Text: * SILICON TUNING VARACTORS This series of high tuning ratio epi-junction microwave tuning varactors 60 V incorporates a passivated mesa technology. It is well suited for frequency tuning applications up to C band. CHIP AND CHIP DIODES PACKAGED DIODES (1)	OCR Scan	ycj60 73016	PDF

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F27D Search Results

F27D Result Highlights (5)

F27D Price and Stock

Texas Instruments SN74F27DR

Texas Instruments SN74F27D

Adam Technologies Inc PLF-27D1-3A-W

Samtec Inc ISDF-27-D

Rochester Electronics LLC SN74F27DR

F27D Datasheets Context Search

Untitled

018pF

DH292

RSF 800

STEP RECOVERY DIODES

DH294

chip varactor

bh32

BH204N

DH80050

EH76150 die

Untitled

dh728

dh200

STK 2028

MVP-100

ge 6065 b

diode cross reference

ci 740

74008

power 22E

Untitled

M208

73016