F50MHZ Search Results

Myson MTD972

Abstract: 10BASET 20MHZ MTD972 1b.9 MYSON TECHNOLOGY
Contextual Info: MTD972 Preliminary MYSON TECHNOLOGY 100BaseTX PCS/PMA FEATURES • · · · · · · · · · · IEEE 802.3 10BaseT and 802.3u 100BaseTx compliant. MII interface with serial management. Auto negotiation compatible with next page capability. 100BaseTx PCS/PMA function with on-chip clock generation and recovery.

VPA05

Contextual Info: SANYO SE MI C ON DU CTO R CORP t3E D • 7-i‘57D?b DBlSt SO ?SH WÊTSkJ _VPA05 F B E T H y b r i d 1O V i d e o Paole VPA S e r ies o Out:put: A m p i if ie r s for u m — R e s o l tat 1 o n C R T Dl sp>l a y s O v r v 10 w Th* V P A 0 5 Is Video Output Amplifier for a Medlum-Resolutlon Monochrom or RGB CRT Display integrates a

TF-450

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Z T X 10 4 7 A ISSUE 3 -JANUARY 1995_ _ FEATURES * Very Low Saturation Voltage * High Gain * 4 Amp Continuous Current APPLICATIONS * DC-DC Convertors * Power Management - Supply Switching

Contextual Info: SOT223 PNP SIUCON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR FZT792A ISSUE 3 - NOVEM BER 1995 FEATURES * High gain and Very low saturation voltage ♦ APPLICATIONS * Battery powered circuits COMPLEMENTARY T Y PE PARTMARKING DETAIL- FZT692B FZT792A B PARAMETER

Contextual Info: SOT223 PNP SILICON PLANAR HIGH CURRENTj HIGH PERFORMANCE TRANSISTORS ISSUE 2 - NOVEMBER 1995_;_ ' FEATURES * Extremely lo w equivalent on-resistance; RCHsat) * 6 Am ps continuous current * * * Up to 20 A m ps peak current Very lo w saturation voltage

Contextual Info: SM-8 DUAL NPN M EDIUM POWER HIGH GAIN TRANSISTORS ZDT694 ISSU E 1 - NOVEM BER 1995_ Oll 1 c r c2Πc2U L .1 _U Bi _U Ei ~ n b2 1 1 E2 SM-8 8 LEAD SOT223 PARTMARKING DETAIL - T694 ABSOLUTE MAXIMUM RATINGS. SY M B O L PARAM ETER VALUE V CBO

M52326SP

Abstract: TP-28 TP20 M5232 TL30M s0636 bsg4a S04B
Contextual Info: aavi C _ 9S ^d to ' «mno iSmNOD <wo j « j> - iS^uMOO m« - - ^ VMM *•»* o i o o - < ^ - ^ ' < i5 W iM » mo j - ^ id»nio - - < p lT n o M » t o » ib>gno r s a - - « sa - ® - - < j> - < ; ) - - O iSVkihOQ ¿SraiNOD iSVfclNQD •l>1l y»o «>f

Contextual Info: SOT223 PNP SILICON PLANAR M EDIU M POWER HIGH GAIN TRANSISTOR FZT790A ISSUE 3 - OCTOBER 1995 FEATU RES * Very low equivalent on-resistance;RCE nt]125mQ at 2 A * Gain of 200 at lc=1 Am p and very low saturation voltage APPLICATIONS * DC-DC converters, Siren drivers.

Contextual Info: TOSHIBA -CDISCRETE/OPTOJ Sb DE I T0T7aS0 00D7474 CITIZEN BAND AND HAM BAND UP TO 50MHz RF Unit in mm POWER AMPLIFIER APPLICATIONS. 1Û3MAX LOW SUPPLY VOLTAGE USE 0z.6±az 3" FEATURES: . Recommended for 12W(PEP) SSB Citizen Band Transceiver Applications.

10ID

Abstract: 2SC2098 Ct513
Contextual Info: T O S H I B A -CDISCRETE/OPTOJ 9097250 T O SH IB A 5fcj DE P T0T7SS0 00D7M74 0 | - D ISCRETE/OPTO SILICON NPN EPI TAXIAL PLANAR TYPE CITIZEN BAND AND HAM BAND UP TO 50MHz RF Unit in mm POWER AMPLIFIER APPLICATIONS. 1 Û 3 M A X (LOW SUPPLY VOLTAGE USE) 03.6 :1 :0 .2

FZT851

Abstract: FZT853 DS-310
Contextual Info: FZT851 SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS _ FZT853 PRO V ISIO N A L DATA FEATURES * 6A C O N T IN U O U S COLLECTOR CURRENT * UPTO 20A PEAK COLLECTOR CURRENT * VERY LOW SATU RATIO N VO LTAG ES * EXCELLENT H fe CH ARACTERISTICS