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    F5400 Search Results

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    Diotec Semiconductor AG UF5400

    DIODE GEN PURP 50V 3A DO201
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    DigiKey UF5400 Cut Tape 1,668 1
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    Mouser Electronics UF5400 2,709
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    TME UF5400 1,670 5
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    • 100 $0.0672
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    Vishay Semiconductors UF5400-E3-54

    DIODE GEN PURP 50V 3A DO201AD
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    DigiKey UF5400-E3-54 Cut Tape 671 1
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    Bivar Inc UHF5-4.000-Y-67

    UNIBODY HIGH FLEX, IP 67, 5MM LI
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    DigiKey UHF5-4.000-Y-67 Bag 95 1
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    Newark UHF5-4.000-Y-67 Bulk 100 1
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    TME UHF5-4.000-Y-67 1
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    KEMET Corporation C276CCF5400LG0J

    CAP FILM 40UF 5% 470VAC RADIAL
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    DigiKey C276CCF5400LG0J Bulk 75 1
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    Mouser Electronics C276CCF5400LG0J
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    Newark C276CCF5400LG0J Bulk 316 1
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    TME C276CCF5400LG0J 32 1
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    Avnet Abacus C276CCF5400LG0J 23 Weeks 400
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    KEMET Corporation C274ACF5400WA0J

    CAP FILM 40UF 5% 470VAC RADIAL
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    DigiKey C274ACF5400WA0J Bulk 3 1
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    Avnet Americas C274ACF5400WA0J Box 16 Weeks 320
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    Mouser Electronics C274ACF5400WA0J 313
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    Newark C274ACF5400WA0J Bulk 262 1
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    RS C274ACF5400WA0J Bulk 1
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    Avnet Abacus C274ACF5400WA0J 23 Weeks 320
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    F5400 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11406-1E MEMORY CMOS 2 x 512 K × 16 Bit Single Data Rate I/F FCRAMTM Extended Temp.Version Consumer/Embedded Application Specific Memory MB81E161622-10-X/-12-X CMOS 2-Bank × 524,288-Word × 16 Bit Fast Cycle Random Access Memory (FCRAM) with Single Data Rate


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    DS05-11406-1E MB81E161622-10-X/-12-X 288-Word MB81E161622 16-bit PDF

    TSOP 54 Package

    Abstract: TSOP 54 PIN 54-PIN TSOP II 54 Package
    Text: THIN SMALL OUTLINE L-LEADED PACKAGE 54 PIN PLASTIC FPT-54P-M01 54-pin plastic TSOP II Lead pitch 0.80mm Package width 500mil Lead shape Gullwing Sealing method Plastic mold (FPT-54P-M01) * : Resin protrusion. (Each side : 0.15 (.006) Max) 54-pin plastic TSOP (II)


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    FPT-54P-M01 500mil 54-pin FPT-54P-M01) F54001S-2C-1 TSOP 54 Package TSOP 54 PIN TSOP II 54 Package PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE4.1E MEMORY CMOS 4 x 1 M × 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F641642D-75/-102/-102L CMOS 4-Bank × 1,048,576-Word × 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F641642D is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


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    MB81F641642D-75/-102/-102L 576-Word MB81F641642D 16-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11025-3E MEMORY CMOS 4 x 4 M × 4 BIT SYNCHRONOUS DYNAMIC RAM MB81164442A-100/-84/-67/-100L/-84L/-67L CMOS 4-Bank × 4,194,304-Word × 4 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION


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    DS05-11025-3E MB81164442A-100/-84/-67/-100L/-84L/-67L 304-Word MB81164442A PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11025-2E MEMORY CMOS 4 x 4 M × 4 BIT SYNCHRONOUS DYNAMIC RAM CMOS 4-BANK × 4,194,304-WORD × 4 BIT Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81164442A is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


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    DS05-11025-2E 2A-125/-100/-84/-67/-125L/-100L/-84L/-67L 304-WORD MB81164442A F9704 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11059-1E MEMORY CMOS 4 x 2 M × 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F121642-75/-102/-102L/-10/-10L CMOS 4-Bank × 2,097,152-Word × 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F121642 is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


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    DS05-11059-1E MB81F121642-75/-102/-102L/-10/-10L 152-Word MB81F121642 16-bit D-63303 F9911 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11046-1E MEMORY CMOS 4 x 4 M × 4 BIT SYNCHRONOUS DYNAMIC RAM MB81F64442C-102/-103/-102L/-103L CMOS 4-Bank × 4,194,304-Word × 4 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F64442C is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


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    DS05-11046-1E MB81F64442C-102/-103/-102L/-103L 304-Word MB81F64442C F9802 PDF

    AE2E

    Abstract: MB81F12842-75
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE2E MEMORY CMOS 4 x 4 M × 8 BIT SYNCHRONOUS DYNAMIC RAM MB81F12842-75/-102/-102L/-10/-10L CMOS 4-Bank × 4,194,304-Word × 8 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F12842 is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


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    MB81F12842-75/-102/-102L/-10/-10L 304-Word MB81F12842 AE2E MB81F12842-75 PDF

    AE2E

    Abstract: MB81F12442-75
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE2E MEMORY CMOS 4 x 8 M × 4 BIT SYNCHRONOUS DYNAMIC RAM MB81F12442-75/-102/-102L/-10/-10L CMOS 4-Bank × 8,388,608-Word × 4 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F12442 is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


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    MB81F12442-75/-102/-102L/-10/-10L 608-Word MB81F12442 AE2E MB81F12442-75 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11053-1E MEMORY CMOS 4 x 2 M × 8 BIT SYNCHRONOUS DYNAMIC RAM MB81F64842D-75/-102/-102L CMOS 4-Bank × 2,097,152-Word × 8 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F64842D is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


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    DS05-11053-1E MB81F64842D-75/-102/-102L 152-Word MB81F64842D D-63303 F9910 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11057-1E MEMORY CMOS 4 x 8 M × 4 BIT SYNCHRONOUS DYNAMIC RAM MB81F12442-75/-102/-102L/-10/-10L CMOS 4-Bank × 8,388,608-Word × 4 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F12442 is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


    Original
    DS05-11057-1E MB81F12442-75/-102/-102L/-10/-10L 608-Word MB81F12442 D-63303 F9911 PDF

    DS05-11047-1E

    Abstract: No abstract text available
    Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11047-1E MEMORY CMOS 4 x 2 M × 8 BIT SYNCHRONOUS DYNAMIC RAM MB81F64842C-102/-103/-102L/-103L CMOS 4-Bank × 2,097,152-Word × 8 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F64842C is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


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    DS05-11047-1E MB81F64842C-102/-103/-102L/-103L 152-Word MB81F64842C F9802 DS05-11047-1E PDF

    UF5408 BL

    Abstract: UF5400 UF5408
    Text: BL GALAXY ELECTRICAL ULTRA FAST RECTIFIER F5400 - - - UF5408 VOLTAGE RANGE: 50 - 1000 V CURRENT: 3.0 A FEATURES DO - 27 Low cos t Low leakage Low forward voltage drop High current capability Easily cleaned with alcohol,Isopropanol and similar solvents The plas tic material carries U/L recognition 94V-0


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    UF5400 UF5408 DO--27 STD-202 F5400 F5404 UF5408 BL UF5408 PDF

    MB811641642A

    Abstract: No abstract text available
    Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11029-2E MEMORY CMOS 4 x 1 M × 16 BIT SYNCHRONOUS DYNAMIC RAM MB811641642A-100/-84/-67/-100L/-84L/-67L CMOS 4-Bank × 1,048,576-Word × 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION


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    DS05-11029-2E MB811641642A-100/-84/-67/-100L/-84L/-67L 576-Word MB811641642A 16-bit PDF

    MB81F64842B-103E

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11041-1E MEMORY CMOS 4 x 2 M × 8 BIT SYNCHRONOUS DYNAMIC RAM MB81F64842B-103E/-103/-10/-103L/-10L CMOS 4-Bank × 2,097,152-Word × 8 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F64842B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


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    DS05-11041-1E MB81F64842B-103E/-103/-10/-103L/-10L 152-Word MB81F64842B F9801 MB81F64842B-103E PDF

    MB81F64442D-102

    Abstract: MB81F64442D-102L MB81F64442D-75
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE4.1E MEMORY CMOS 4 x 4 M × 4 BIT SYNCHRONOUS DYNAMIC RAM MB81F64442D-75/-102/-102L CMOS 4-Bank × 4,194,304-Word × 4 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F64442D is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


    Original
    MB81F64442D-75/-102/-102L 304-Word MB81F64442D MB81F64442D-102 MB81F64442D-102L MB81F64442D-75 PDF

    Untitled

    Abstract: No abstract text available
    Text: MEMORY CMOS 4 x 4 M x 4 BIT SYNCHRONOUS DYNAMIC RAM MB81F64442C-102/-103/-102L/-103L CMOS 4-Bank x 4,194,304-Word x 4 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F64442C is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


    OCR Scan
    MB81F64442C-102/-103/-102L/-103L 304-Word MB81F64442C F9802 PDF

    Untitled

    Abstract: No abstract text available
    Text: MEMORY CMOS 4 x 4 M x 4 BIT SYNCHRONOUS DYNAMIC RAM MB81164442A-100/-84/-67/-100L/-84L/-67L CMOS 4-Bank x 4,194,304-Word x 4 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81164442A is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


    OCR Scan
    MB81164442A-100/-84/-67/-100L/-84L/-67L 304-Word MB81164442A B81164442A F9802 PDF

    A81DC

    Abstract: a21dc a51dc SG 2368 FE8800 ED8000 E78000 FA6400 0110FFFF e7040
    Text: MOTOROLA Order at ANE408/0 SEMICONDUCTOR APPLICATION NOTE ANE408 Previously ANE008 Logarithmic/Linear Conversion Routines for DSP56000/1 Prepared by: Eric Cheval Motorola G eneva, Switzerland I. INTRODUCTION DSP chips are often connected to mono-circuits (cofidecs) in telecommunication applications. When programmed *Cs multichannel DTMF


    OCR Scan
    ANE408/D DSP56000/1 ANE408 ANE008) DSP56000/1 300-3400hz A81DC a21dc a51dc SG 2368 FE8800 ED8000 E78000 FA6400 0110FFFF e7040 PDF

    Untitled

    Abstract: No abstract text available
    Text: MEMORY CMOS 4 x 2 M x 8 BIT SYNCHRONOUS DYNAMIC RAM MB81164842E-100/-84/-67/-100L/-84L/-67L CMOS 4-Bank x 2,097,152-Word x 8 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81164842E is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


    OCR Scan
    MB81164842E-100/-84/-67/-100L/-84L/-67L 152-Word MB81164842E B81164842E F9803 PDF

    1N15

    Abstract: No abstract text available
    Text: MEMORY CMOS 4 x 1 M x 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F641642C-102/-103/-102L/-103L CMOS 4-Bank x 1,048,576-Word x 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F641642C is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


    OCR Scan
    MB81F641642C-102/-103/-102L/-103L 576-Word MB81F641642C 16-bit F9802 1N15 PDF

    Untitled

    Abstract: No abstract text available
    Text: MEMORY CMOS 4 x 2 M x 8 BIT SYNCHRONOUS DYNAMIC RAM MB81F64842C-102/-103/-102L/-103L CMOS 4-Bank x 2,097,152-Word x 8 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F64842C is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


    OCR Scan
    MB81F64842C-102/-103/-102L/-103L 152-Word MB81F64842C F9802 PDF

    Untitled

    Abstract: No abstract text available
    Text: IF a s f Logic Digital Delay Units SERIES: DDU-4F I ' 1 » J 1»* t ’ 4 "ìnS “'I T T L Interfaced F e a tu re s : • Auto-insertable. ■ Com pletely interfaced with TTL and DTL application. ■ No external com ponents required. ■ P.C. board space econom y achieved.


    OCR Scan
    DDU-4F-5025 DDU-4F-5050 F-5075 DDU-4F-5100 DDU-4F-5150 F-5200 F-5250 F-5300 F-5400 F-5500 PDF

    Untitled

    Abstract: No abstract text available
    Text: MEMORY CMOS 4 x 1 M x 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F641642C-102/-103/-102L/-103L CMOS 4-Bank x 1,048,576-Word x 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F641642C is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


    OCR Scan
    MB81F641642C-102/-103/-102L/-103L 576-Word MB81F641642C 16-bit 54-pin FPT-54P-M02) PDF