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    F62 CURRENT TRANSISTOR Search Results

    F62 CURRENT TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    F62 CURRENT TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LDTD123YLT1G

    Abstract: f62 current transistor marking F62 f62 transistor
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTD123YLT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an


    Original     		PDF LDTD123YLT1G OT-23 LDTD123YLT1G f62 current transistor marking F62 f62 transistor

    f62 current transistor

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Digital transistors built-in resistors Pb-Free package is available FFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thinfilm resistors with complete isolation to allow positive biasing of the


    Original     		PDF LDTD123YLT1G f62 current transistor

    marking F62

    Abstract: 100MHZ DTD123Y
    Text: DTD123Y Bias Resistor Transistor NPN Silicon COLLECTOR 3 P b Lead Pb -Free R1 1 BASE 3 1 R2 2 EMITTER 2 SOT-23 Absolute maximum ratings (TA = 25ºC) Parameter Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature


    Original     		PDF DTD123Y OT-23 -500m 100MHZ 25-Apr-08 OT-23 marking F62 100MHZ DTD123Y

    DTD123Y

    Abstract: DTD123YK DTD123YS SC-72 T146
    Text: DTD123YK / DTD123YS Transistors Digital transistors built-in resistors DTD123YK / DTD123YS zExternal dimensions (Unit : mm) 2.9±0.2 DTD123YK 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 (2) 0 to 0.1 2.8±0.2 1.6 +0.2 −0.1 (1) ROHM : SMT3 EIAJ : SC-59 +0.1


    Original     		PDF DTD123YK DTD123YS DTD123YK SC-59 DTD123Y DTD123YS SC-72 T146

    Untitled

    Abstract: No abstract text available
    Text: DTD123YK / DTD123YS Transistors Digital transistors built-in resistors DTD123YK / DTD123YS zExternal dimensions (Unit : mm) 2.9±0.2 DTD123YK 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 (2) 0 to 0.1 2.8±0.2 1.6 +0.2 −0.1 (1) ROHM : SMT3 EIAJ : SC-59 +0.1


    Original     		PDF DTD123YK DTD123YS DTD123YK

    Untitled

    Abstract: No abstract text available
    Text: DTD123YK NPN 500mA 50V Digital Transistors Datasheet Bias Resistor Built-in Transistors lOutline Parameter Value VCC 50V 500mA 2.2kW 10kW IC(MAX.) R1 R2 SMT3 OUT IN GND DTD123YK SOT-346 (SC-59) lFeatures 1) Built-In Biasing Resistors lInner circuit 2) Built-in bias resistors enable the configuration of


    Original     		PDF DTD123YK 500mA 500mA OT-346 SC-59) R1120A

    T146

    Abstract: DTD123YK
    Text: Digital transistors built-in resistors DTD123YK zDimensions (Unit : mm) 2.9 DTD123YK 1.1 0.4 0.8 (3) (2) (1) 0.95 0.95 0.15 1.9 ROHM : SMT3 EIAJ : SC-59 0.3Min. zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors


    Original     		PDF DTD123YK SC-59 R0039A T146 DTD123YK

    Untitled

    Abstract: No abstract text available
    Text: DTD123YK NPN 500mA 50V Digital Transistors Datasheet Bias Resistor Built-in Transistors lOutline Parameter Value VCC 50V 500mA 2.2kW 10kW IC(MAX.) R1 R2 SMT3 OUT IN GND DTD123YK SOT-346 (SC-59) lFeatures 1) Built-In Biasing Resistors lInner circuit 2) Built-in bias resistors enable the configuration of


    Original     		PDF DTD123YK 500mA DTD123YK OT-346 SC-59) DTB123YK R1120A

    transistor irf620

    Abstract: No abstract text available
    Text: IRF620 Data Sheet Title F62 bt 0A, 0V, 00 m, June 1999 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRF620 TB334 IRF620 transistor irf620

    tico 732

    Abstract: hengstler tico 732 pulse counter hengstler Danaher 66266-3 Hengstler relay F211 F221 F222 1310301
    Text: Benutzerhandbuch User Manual Zweikanaliger Multifunktionszähler Bidirectional Multifunction-Counter tico 732 0. 1. 1.1 1.2 1.3 1.4 2. 2.1 2.2 2.3 2.4 2.5 3. 3.1 3.2 3.3 4. 4.1 4.2 4.3 4.4 4.5 5. 5.1 5.2 5.3 5.4 5.5 6. 6.1 6.2 6.3 6.4 6.5 7. 8. Sicherheitshinweise .


    Original     		PDF D-78550 D-78554 tico 732 hengstler tico 732 pulse counter hengstler Danaher 66266-3 Hengstler relay F211 F221 F222 1310301

    Untitled

    Abstract: No abstract text available
    Text: 8050S SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LID . TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER * Complement to 8550S * Collector C urrent: Ic=500mA * Collector D issipation: Pc=225mW Tc=25°C ABSOLUTE MAXIMUM RATINGS a t Tan*-25°C


    OCR Scan     		PDF 8050S 8550S 500mA 225mW 062in 300uS, 100uA 500mA

    marking F62

    Abstract: M7025 f62 current transistor
    Text: KSA1182 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Complement to SOT-23 KSC2859 ABSOLUTE MAXIMUM RATINGS TA“ 2 5 t C haracteristic Collector-Base Voltage Collector-Em itter Voltage Emitter-Base Voltage Collector Current Collector Dissipation


    OCR Scan     		PDF KSA1182 KSC2859 OT-23 -100mA -400mA -100mA, -10mA -20mA, marking F62 M7025 f62 current transistor

    K 4005 transistor

    Abstract: k5012 f62 current transistor
    Text: Transistors Digital transistors built-in resistors DTD123YK / DTD123YS •F e a tu re s 1) B uilt-in bias resistors enable the configuration of an inverter circuit without connecting external input re sistors (see the e quivalent cir­ cuit). 2) The bias resistors consist of thinfilm resistors with complete isola­


    OCR Scan     		PDF DTD123YK DTD123YS DTD123YK 50mA/2 100MHz DTD123YS K 4005 transistor k5012 f62 current transistor

    transistors marking ND

    Abstract: marking F62
    Text: DTD123YK Digital transistor, NPN, with 2 resistors Features Dimensions Units : mm • • • • • available in an SMT3 (SMT, SC-59) package package marking: DTD123VK; F62 a built-in bias resistor allows inverter circuit configuration without external


    OCR Scan     		PDF DTD123YK SC-59) DTD123VK; 10kfl transistors marking ND marking F62

    Untitled

    Abstract: No abstract text available
    Text: Transistors Digital transistors built-in resistors DTD123YK / DTD123YS • F e a tu re s •E x te rn a l dim ensions (Units: mm) 1 ) B u ilt-in bias re s is to rs e n a b le the con fig u ra tio n of an inverter circu it DTD123YK 1;1+0-2 - 0.1 w ithout con ne cting external input


    OCR Scan     		PDF DTD123YK DTD123YS SC-59

    Untitled

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2SA1608 HIGH FREQUENCY AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR FEA TU RES PACKAGE DIMENSIONS in m illim e te rs • High fT : f T =400 MHz • Complementary to 2SC3739 2 . 110.1 1 .2 5 ± 0 .1 A B S O L U T E M AXIM UM R A T IN G S


    OCR Scan     		PDF 2SA1608 2SC3739

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRAN SISTOR M O D U LES ! HIGH POWER SWITCHING U SE INSULATED TYPE f QM75DY-HB I j QNI750Y-HB • Ic • Vcex Collector current.75A Collector-emitter voltage. 600V • hFE DC current gain. 750


    OCR Scan     		PDF QM75DY-HB QNI750Y-HB E80276 E80271 QM75DY-HB 15QmAIS

    Untitled

    Abstract: No abstract text available
    Text: Transistors Digital transistors built-in resistors DTD123YK / DTD123YS •F e a tu re s •E x te rn a l dimensions (Units: mm) 1 ) Built-in bias resistors en ab le the configuration of an inverter circuit 2.9±0.2 DTD123YK + 1 1 0.2 ; -0.1 1.9+0.2 without connecting external input


    OCR Scan     		PDF DTD123YK DTD123YS DTD123YK SC-59 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP.

    2ss9014

    Abstract: ss8015 A 671 transistor SS9013 SS9014 U007 transistor ss9014 SS9012 T-31-21 50nr
    Text: IM E D SAMSUNG SEM ICONDUCTOR . INC I 7*^4142 " SS9012 4 I 00073*1 T - f i ~ 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • High total power dissipation: PT=825mW High Collector Current. (Ic = -500mA) Complementary to SS9013


    OCR Scan     		PDF 71b4142 SS9012 825mW) -500mA) SS9013 Breakdo4142 SS9014 fe-14 1-10C 2ss9014 ss8015 A 671 transistor SS9013 U007 transistor ss9014 T-31-21 50nr

    E78996 rectifier module

    Abstract: irfk4h350 IRFK4H351
    Text: HE D I 4ÛS5452 OOQTGlc? 4 | IN TERN ATION AL Data Sheet No. PD-9.448B R EC TIFIER T-39-27 INTERNATIONAL RECTIFIER RECOGNIZED I « R HEXPAK POWER MODULE IRFK4H3SO IRFK4H351 File no E78996 Isolated Base Power HEXFET Parallel Assembly 400 Volt, 75 mil HEXPAK


    OCR Scan     		PDF S5452 E78996 IRFK4H351 E78996 rectifier module irfk4h350 IRFK4H351

    2920A

    Abstract: NS2N A2JA 2N2920A 2N2913 2N2920
    Text: mmm types 2N2813 t h r u 2N29?o mZSMA 2N2972 THRU 2N2979 DUAL N P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 6 9 1 1 1 6 5 . M A R C H 1969 A BR O A D F A M IL Y OF D U A L T R A N S IS T O R S R ECO M M EN D ED FO R Differential Amplifiers High-Gain, Low-Noise, Audio Amplifiers


    OCR Scan     		PDF 2N2813 2N2972 2N2979 2920A NS2N A2JA 2N2920A 2N2913 2N2920

    equivalent transistor TT 3034

    Abstract: transistor TT 3034 A771 TRANSISTOR transistor b722 124e transistor Transistor b865 tc 144e DTC1132 B718 TRANSISTOR 124E
    Text: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, D river & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded


    OCR Scan     		PDF

    B861 transistor

    Abstract: equivalent transistor TT 3034 transistor b722 b863 PK2222A a774 transistor TT 3034 tc 144e TRANSISTOR 124E A771 TRANSISTOR
    Text: R OJ N m DTA/DTB/DTC/DTD I DIGITAL TRANSISTOR APPLICATION: • j EQUIVALENT CIRCUITS: Inverter, D river & Interface Circuits FEA T U R ES; • R ep laces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded


    OCR Scan     		PDF J/U13 B861 transistor equivalent transistor TT 3034 transistor b722 b863 PK2222A a774 transistor TT 3034 tc 144e TRANSISTOR 124E A771 TRANSISTOR

    transistor b722

    Abstract: b863 tc 144e Transistor b861 B861 equivalent transistor TT 3034 A771 TRANSISTOR B861 transistor DTC103 transistor TT 3034
    Text: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded


    OCR Scan     		PDF