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    F62 TRANSISTOR Search Results

    F62 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    F62 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor irf620

    Abstract: No abstract text available
    Text: IRF620 Data Sheet Title F62 bt 0A, 0V, 00 m, June 1999 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRF620 TB334 IRF620 transistor irf620

    f62 current transistor

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Digital transistors built-in resistors Pb-Free package is available FFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thinfilm resistors with complete isolation to allow positive biasing of the


    Original     		PDF LDTD123YLT1G f62 current transistor

    LDTD123YLT1G

    Abstract: f62 current transistor marking F62 f62 transistor
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTD123YLT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an


    Original     		PDF LDTD123YLT1G OT-23 LDTD123YLT1G f62 current transistor marking F62 f62 transistor

    marking F62

    Abstract: 100MHZ DTD123Y
    Text: DTD123Y Bias Resistor Transistor NPN Silicon COLLECTOR 3 P b Lead Pb -Free R1 1 BASE 3 1 R2 2 EMITTER 2 SOT-23 Absolute maximum ratings (TA = 25ºC) Parameter Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature


    Original     		PDF DTD123Y OT-23 -500m 100MHZ 25-Apr-08 OT-23 marking F62 100MHZ DTD123Y

    SC-59

    Abstract: k2647 transistor F24 07 transistor sc59 marking SC59 transistor w 04 59 dtc123jka sc-59 g21 Transistor K2522 MUN2211
    Text: D I G I TA L T R A N S I S T O R A R R AY S SINGLE NPN TRANSISTOR CIRCUITS • COMPLETE SUB–CIRCUITS IN A SINGLE PACKAGE: SAVE PLACEMENT COSTS, INCREASES RELIABILITY FUNCTIONAL EQUIVALENTS PART NO MUN2211 MUN2212 MUN2213 ROHM DTC114EKA DTC124EKA DTC144EKA


    Original     		PDF MUN2211 MUN2212 MUN2213 DTC114EKA DTC124EKA DTC144EKA SC-75A, SC-70, SC-59 SC-75A SC-59 k2647 transistor F24 07 transistor sc59 marking SC59 transistor w 04 59 dtc123jka sc-59 g21 Transistor K2522

    k2647

    Abstract: SC-59 transistor F24 07 dtc123jka sc-59 K2522 h03 diode diode Marking H27
    Text: D I G I TA L T R A N S I S T O R A R R AY S SINGLE NPN TRANSISTOR CIRCUITS • COMPLETE SUB–CIRCUITS IN A SINGLE PACKAGE: SAVE PLACEMENT COSTS, INCREASES RELIABILITY FUNCTIONAL EQUIVALENTS PART NO MUN2211 MUN2212 MUN2213 ROHM DTC114EKA DTC124EKA DTC144EKA


    Original     		PDF MUN2211 MUN2212 MUN2213 DTC114EKA DTC124EKA DTC144EKA SC-75A, SC-70, SC-59 SC-75A k2647 SC-59 transistor F24 07 dtc123jka sc-59 K2522 h03 diode diode Marking H27

    DTD123Y

    Abstract: DTD123YK DTD123YS SC-72 T146
    Text: DTD123YK / DTD123YS Transistors Digital transistors built-in resistors DTD123YK / DTD123YS zExternal dimensions (Unit : mm) 2.9±0.2 DTD123YK 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 (2) 0 to 0.1 2.8±0.2 1.6 +0.2 −0.1 (1) ROHM : SMT3 EIAJ : SC-59 +0.1


    Original     		PDF DTD123YK DTD123YS DTD123YK SC-59 DTD123Y DTD123YS SC-72 T146

    Untitled

    Abstract: No abstract text available
    Text: DTD123YK / DTD123YS Transistors Digital transistors built-in resistors DTD123YK / DTD123YS zExternal dimensions (Unit : mm) 2.9±0.2 DTD123YK 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 (2) 0 to 0.1 2.8±0.2 1.6 +0.2 −0.1 (1) ROHM : SMT3 EIAJ : SC-59 +0.1


    Original     		PDF DTD123YK DTD123YS DTD123YK

    Untitled

    Abstract: No abstract text available
    Text: DTD123YK NPN 500mA 50V Digital Transistors Datasheet Bias Resistor Built-in Transistors lOutline Parameter Value VCC 50V 500mA 2.2kW 10kW IC(MAX.) R1 R2 SMT3 OUT IN GND DTD123YK SOT-346 (SC-59) lFeatures 1) Built-In Biasing Resistors lInner circuit 2) Built-in bias resistors enable the configuration of


    Original     		PDF DTD123YK 500mA 500mA OT-346 SC-59) R1120A

    T146

    Abstract: DTD123YK
    Text: Digital transistors built-in resistors DTD123YK zDimensions (Unit : mm) 2.9 DTD123YK 1.1 0.4 0.8 (3) (2) (1) 0.95 0.95 0.15 1.9 ROHM : SMT3 EIAJ : SC-59 0.3Min. zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors


    Original     		PDF DTD123YK SC-59 R0039A T146 DTD123YK

    Untitled

    Abstract: No abstract text available
    Text: DTD123YK NPN 500mA 50V Digital Transistors Datasheet Bias Resistor Built-in Transistors lOutline Parameter Value VCC 50V 500mA 2.2kW 10kW IC(MAX.) R1 R2 SMT3 OUT IN GND DTD123YK SOT-346 (SC-59) lFeatures 1) Built-In Biasing Resistors lInner circuit 2) Built-in bias resistors enable the configuration of


    Original     		PDF DTD123YK 500mA DTD123YK OT-346 SC-59) DTB123YK R1120A

    rkm 33 transistor

    Abstract: g1k bc848b rkm transistor DTB133HKA DTD133HKA MMST8598 TRANSISTOR MARKING CODE R2A rkm 35 transistor 2SA1885 marking W8 transistor
    Text: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.


    Original     		PDF IMB11A IMB16 IMB17A IMD10A IMD14 IMD16A IMH10A IMH11A IMH14A IMH15A rkm 33 transistor g1k bc848b rkm transistor DTB133HKA DTD133HKA MMST8598 TRANSISTOR MARKING CODE R2A rkm 35 transistor 2SA1885 marking W8 transistor

    113 marking code transistor ROHM

    Abstract: DTDS14GP DTB133HKA rkm transistor 2SC5274 datasheet FMC1A rkm 33 transistor FMC1A rkm 24 DTD133HKA
    Text: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.


    Original     		PDF

    transistors marking ND

    Abstract: marking F62
    Text: DTD123YK Digital transistor, NPN, with 2 resistors Features Dimensions Units : mm • • • • • available in an SMT3 (SMT, SC-59) package package marking: DTD123VK; F62 a built-in bias resistor allows inverter circuit configuration without external


    OCR Scan     		PDF DTD123YK SC-59) DTD123VK; 10kfl transistors marking ND marking F62

    marking F62

    Abstract: M7025 f62 current transistor
    Text: KSA1182 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Complement to SOT-23 KSC2859 ABSOLUTE MAXIMUM RATINGS TA“ 2 5 t C haracteristic Collector-Base Voltage Collector-Em itter Voltage Emitter-Base Voltage Collector Current Collector Dissipation


    OCR Scan     		PDF KSA1182 KSC2859 OT-23 -100mA -400mA -100mA, -10mA -20mA, marking F62 M7025 f62 current transistor

    K 4005 transistor

    Abstract: k5012 f62 current transistor
    Text: Transistors Digital transistors built-in resistors DTD123YK / DTD123YS •F e a tu re s 1) B uilt-in bias resistors enable the configuration of an inverter circuit without connecting external input re sistors (see the e quivalent cir­ cuit). 2) The bias resistors consist of thinfilm resistors with complete isola­


    OCR Scan     		PDF DTD123YK DTD123YS DTD123YK 50mA/2 100MHz DTD123YS K 4005 transistor k5012 f62 current transistor

    Untitled

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR FA1L3Z M EDIUM SPEED SW ITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS • in m N lim «t«rs Resistor Built-in TYPE B o— \W ~ - R i = 4.7 k n *1 • Complementary to FN1L3Z ABSOLUTE M AXIM U M RATINGS


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors Digital transistors built-in resistors DTD123YK / DTD123YS • F e a tu re s •E x te rn a l dim ensions (Units: mm) 1 ) B u ilt-in bias re s is to rs e n a b le the con fig u ra tio n of an inverter circu it DTD123YK 1;1+0-2 - 0.1 w ithout con ne cting external input


    OCR Scan     		PDF DTD123YK DTD123YS SC-59

    Untitled

    Abstract: No abstract text available
    Text: 101 Surface Mount Devices High Voltage Transistors Ratings Type Package v CEO V v CBO V typ MHz Pinout See Section VII 3 0 /5 3 0 /5 3 0 /5 5 0 /5 60 60 60 100 AE R F F 10/1 200 F 5 0 /5 10/1 2 0 /2 2 0 /2 100 F 200 50 50 F F R 3 0 /5 60 AE 3 0 /5 3 0 /5 2 0 /2


    OCR Scan     		PDF BST15 BTA93 PZTA93 BST16 BTA92 PXTA92 PZTA92

    Untitled

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2SA1608 HIGH FREQUENCY AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR FEA TU RES PACKAGE DIMENSIONS in m illim e te rs • High fT : f T =400 MHz • Complementary to 2SC3739 2 . 110.1 1 .2 5 ± 0 .1 A B S O L U T E M AXIM UM R A T IN G S


    OCR Scan     		PDF 2SA1608 2SC3739

    sot-23 MARKING CODE ZA

    Abstract: b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23
    Text: SURFACE-MOUNTED DEVICE MARKINGS Because of their smali size, it's not possible to show types/ values on most surface-mounted components. The following tables show the code markings used to identify most common surface-mounted transistors and diodes. Note that the same


    OCR Scan     		PDF OT-23, OT-89 OT-143 BZV49 OT-23 2SC2059K sot-23 MARKING CODE ZA b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23

    rkm 33 transistor

    Abstract: bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor
    Text: Transistors Abbreviated label symbols on mini molded type Abbreviated label symbols on mini molded type •E M T 3 and UMT3 labels On general transistors, the product and hpE rank are in­ dicated by 2 or 3 letters. On digital transistors, the product type is indicated by a 2-digit number.


    OCR Scan     		PDF FMA10A FMA11A IMB10A IMB11A IMB16 IMB17A IMD10A IMD14 IMD16A IMH10A rkm 33 transistor bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRAN SISTOR M O D U LES ! HIGH POWER SWITCHING U SE INSULATED TYPE f QM75DY-HB I j QNI750Y-HB • Ic • Vcex Collector current.75A Collector-emitter voltage. 600V • hFE DC current gain. 750


    OCR Scan     		PDF QM75DY-HB QNI750Y-HB E80276 E80271 QM75DY-HB 15QmAIS

    Untitled

    Abstract: No abstract text available
    Text: Transistors Digital transistors built-in resistors DTD123YK / DTD123YS •F e a tu re s •E x te rn a l dimensions (Units: mm) 1 ) Built-in bias resistors en ab le the configuration of an inverter circuit 2.9±0.2 DTD123YK + 1 1 0.2 ; -0.1 1.9+0.2 without connecting external input


    OCR Scan     		PDF DTD123YK DTD123YS DTD123YK SC-59 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP.