marking code FA12
Abstract: resister 10Kohm SM2964 SM2964C16 SM2964C25 SM2964C40 mov7
Text: SyncMOS Technologies Inc. SM2964 December 1998 8 - Bit Micro-controller with 64KB flash embedded Product List SM2964C16, 16 MHz 64KB internal flash MCU SM2964C25, 25 MHz 64KB internal flash MCU SM2964C40, 40 MHz 64KB internal flash MCU Features Working voltage:4.5V through 5.5V
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SM2964
SM2964C16,
SM2964C25,
SM2964C40,
SM2964
16-bit
80C52.
marking code FA12
resister 10Kohm
SM2964C16
SM2964C25
SM2964C40
mov7
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Q62702-P1610
Abstract: Q62702-P1611 Q62702-P1614 Q62702-P1615 Q62702-P1638 Q62702-P1639
Text: SFH 325 SFH 325 FA fpl06867 NPN-Silizium-Fototransistor im SMT SIDELED-Gehäuse Silicon NPN Phototransistor in SMT SIDELED-Package 0.7 2.8 2.4 4.2 3.8 2.4 (R1) fplf6867 (1.4) 3.8 3.4 (2.9) Cathode marking Anode (0.3) Cathode 2.54 spacing (2.85) 1.1
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fpl06867
fplf6867
OHF01530
IPCE/IPCE25o
OHF01528
OHF01524
Q62702-P1610
Q62702-P1611
Q62702-P1614
Q62702-P1615
Q62702-P1638
Q62702-P1639
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2SC4179
Abstract: No abstract text available
Text: Transistors IC SMD Type NPN Silicon Epitaxia 2SC4179 Features High gain bandwidth product. Low output capacitance. Low noise figure. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 50 V
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2SC4179
-10mA
2SC4179
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Untitled
Abstract: No abstract text available
Text: Opto Semiconductors 0.3 min 2.1 1.7 1.0 0.9 5.4 5.0 1.7 1.5 2.4 3.4 3.0 0.3 max 3.0 2.6 2.3 2.1 SFH 3211 SFH 3211 FA fpl06899 NPN-Silizium-Fototransistor im SMT TOPLED RG-Gehäuse Silicon NPN Phototransistor in SMT TOPLED RG-Package 0.0.1 Cathode/Collector marking
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fpl06899
fplf6899
GPL06899
103ff.
169ff.
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BF900
Abstract: marking BP LED 103BF Fototransistor fototransistor led Q62702-P1057 Q62702-P1058 Q62702-P1192 Q62702-P85-S2 Q62702-P85-S3
Text: BP 103 B BP 103 BF .NPN-Silizium-Fototransistor NEU: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor NEW: Silicon NPN Phototransistor with Daylight Filter BP 103 B BP 103 BF Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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ICEO/ICEO25o
IPCE/IPCE25o
BF900
marking BP LED
103BF
Fototransistor
fototransistor led
Q62702-P1057
Q62702-P1058
Q62702-P1192
Q62702-P85-S2
Q62702-P85-S3
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npn phototransistor sfh 309
Abstract: SFH 256 diode p1000 Fototransistor fototransistor led P1000 diode Q62702-P999 transistor 309 Q62702-P1000 Q62702-P174
Text: SFH 309 SFH 309 F NPN-Silizium-Fototransistor NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor Silicon NPN Phototransistor with Daylight Filter SFH 309 SFH 309 F Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified
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IPCE/IPCE25o
npn phototransistor sfh 309
SFH 256
diode p1000
Fototransistor
fototransistor led
P1000 diode
Q62702-P999
transistor 309
Q62702-P1000
Q62702-P174
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GEO06351
Abstract: Q62702-P3587 Q62702-P3588 Q62702-P957 Q62702-P958
Text: NPN-Silizium-Fototransistor; mit Tageslichtsperrfilter Silicon NPN Phototransistor; with Daylight Filter SFH 303 SFH 303 FA SFH 303 SFH 303 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm SFH 303 und bei 880 nm (SFH 303 FA)
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GEO06351
GEO06351
Q62702-P3587
Q62702-P3588
Q62702-P957
Q62702-P958
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Hall sensors marking code D
Abstract: 502a hall sensor TRANSISTOR SMD MARKING CODES SMD marking codes Hall sensors 4 Pin SMD Hall sensors SMD codes Hall sensors linear TRANSISTOR SMD MARKING CODE ag SMD Hall sensors code C transistor smd code marking KEY hall 502a
Text: General Literature S p eci a l To p i c s Hall Sensors: Ordering Codes, Packaging, Handling Edition Nov. 9, 2007 GL000002-003EN Hall Sensors: Ordering Codes, Packaging, Handling Copyright, Warranty, and Limitation of Liability The information and data contained in this document are believed to be accurate and reliable.
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GL000002-003EN
6200-249-1E.
6200-249-2E.
6200-249-3E.
GL000002
002EN.
003EN.
D-79108
D-79008
Hall sensors marking code D
502a hall sensor
TRANSISTOR SMD MARKING CODES
SMD marking codes Hall sensors
4 Pin SMD Hall sensors
SMD codes Hall sensors linear
TRANSISTOR SMD MARKING CODE ag
SMD Hall sensors code C
transistor smd code marking KEY
hall 502a
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Q62702-P1610
Abstract: Q62702-P1611 Q62702-P1614 Q62702-P1615 Q62702-P1638 Q62702-P1639 Q62702-P3603 Q62702-P3604 OHF01924
Text: NPN-Silizium-Fototransistor im SMT SIDELED -Gehäuse Silicon NPN Phototransistor in SMT SIDELED®-Package SFH 325 SFH 325 FA SFH 325 SFH 325 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1150 nm SFH 325 und bei
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Untitled
Abstract: No abstract text available
Text: NPN-Silizium-Fototransistor im SMT TOPLED -Gehäuse Silicon NPN Phototransistor in SMT TOPLED®-Package SFH 320 SFH 320 FA SFH 320 SFH 320 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1150 nm SFH 320 und bei 880 nm (SFH 320 FA)
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Q62702-P0961
Q62702-P390
Q62702-P3602
Q62702-P1606
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Q62702-P1610
Abstract: Q62702-P1611 Q62702-P1614 Q62702-P1615 Q62702-P1638 Q62702-P1639 Q62702-P3603 Q62702-P3604 OHF01121
Text: NPN-Silizium-Fototransistor im SMT SIDELED-Gehäuse Silicon NPN Phototransistor in SMT SIDELED-Package SFH 325 SFH 325 FA SFH 325 SFH 325 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1150 nm SFH 325 und bei
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Q62702-P0961
Abstract: Q62702-P0988 Q62702-P1606 Q62702-P1607 Q62702-P3601 Q62702-P3602 Q62702-P390 Q62702-P393
Text: NPN-Silizium-Fototransistor im SMT TOPLED-Gehäuse Silicon NPN Phototransistor in SMT TOPLED-Package SFH 320 SFH 320 FA SFH 320 SFH 320 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1150 nm SFH 320 und bei
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502a hall sensor
Abstract: hall sensor smd 502A TO-92UA SMD Hall sensors code se micronas ordering codes SMD Hall sensors code C to92ua hal 502a
Text: Hall Sensors: Ordering Codes, Packaging, Handling Edition Sept. 12, 2001 6200-249-2E Hall Sensors: Ordering Codes, Packaging, Handling Contents Page Section Title 3 3 4 4 4 4 5 6 6 7 1. 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 Ordering Codes for Hall Sensors Overview
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6200-249-2E
502a hall sensor
hall sensor smd 502A
TO-92UA
SMD Hall sensors code se
micronas ordering codes
SMD Hall sensors code C
to92ua
hal 502a
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Untitled
Abstract: No abstract text available
Text: Barrier Strip Filtered Terminal Blocks The barrier strip filtered terminal block is designed to provide excellent EMI/RFI filtering of AC and DC power lines and control lines. This terminal block is available in various sizes, with terminals for soldering or spade lugs.
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E133076,
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Untitled
Abstract: No abstract text available
Text: NPN-Silizium-Fototransistor im SMT TOPLED RG-Gehäuse Silicon NPN Phototransistor in SMT TOPLED® RG-Package SFH 3211 SFH 3211 FA SFH 3211 SFH 3211 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1150 nm SFH 3211 und bei
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DRAM11
Abstract: ADVA 186-ball NOR Flash
Text: S72WS-S based MCP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus Simultaneous Read/Write, Burst Mode MirrorBit Eclipse NOR Flash on Bus 1 Mobile SDRAM on Bus 2 Data Sheet Advance Information S72WS-S based MCP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S72WS-S
DRAM11
ADVA
186-ball
NOR Flash
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SC74A
Abstract: 74a diode 2SA20 chdtc114e transistor circuit BD NPN transistors CHUMH11 marking FG9 CIRCUIT79
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Marking Equivalent Collector Collector to Current Emitter Voltage IC VCEO V mA DC Current Gain HFE @ VCE / IC Min-Max V / mA Saturation Voltage Collector to Emitter VCE SAT @ IC / IB
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CHUMD12
CHDTA114E
CHDTC114E
CHDTA114Y
CHDTC114Y
CHDTA124E
CHDTC124E
CHDTA144E
SC74A
74a diode
2SA20
chdtc114e
transistor circuit
BD NPN transistors
CHUMH11
marking FG9
CIRCUIT79
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Q62702-P3604
Abstract: Q62702-P1610 Q62702-P1611 Q62702-P1614 Q62702-P1615 Q62702-P1638 Q62702-P1639 Q62702-P3603
Text: NPN-Silizium-Fototransistor im SMT SIDELED -Gehäuse Silicon NPN Phototransistor in SMT SIDELED®-Package SFH 325 SFH 325 FA SFH 325 SFH 325 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1150 nm SFH 325 und bei
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Untitled
Abstract: No abstract text available
Text: SILICON TRANSISTOR 2SC4179 FM /A M RF AMPLIFIER, MIXER, OSCILLATOR, CONVERTER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters • High Gain Bandwidth Product: f-j- = 250 MHz TYP. • Low O utput Capacitance: CQb = 1.8 pF TYP. • Low Noise Figure: NF * 2.0 dB TYP.
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2SC4179
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Untitled
Abstract: No abstract text available
Text: Opto Semiconductors NPN-Silizium-Fototransistor im SMT TOPLED RG-Gehäuse SFH 3211 SFH 3211 FA Silicon NPN Phototransistor in SMT TOPLED® RG-Package Maße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherw ise specified. Wesentliche Merkmale
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103ff.
169ff.
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sfh siemens
Abstract: npn phototransistor sfh 309 380nm SFH 309
Text: SIEMENS NPN-Silizium-Fototransistor NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor Silicon NPN Phototransistor with Daylight Filter SFH 309 SFH 309 F Area not flat 4,5t-” Collector Transistor Cathode (Diode) 'Chip position
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PCE25°
sfh siemens
npn phototransistor sfh 309
380nm
SFH 309
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f41 marking
Abstract: No abstract text available
Text: SIEMENS NPN-Silizium-Fototransistor NPN-Silizium-Fototransistor mit Tageslichtsperrfilter SFH 303 SFH 303 F Silicon NPN Phototransistor Silicon NPN Phototransistor with Daylight Filter Maße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherwise specified
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Phototransistor bp 101
Abstract: fototransistor led bf 252 SFH 207 Q62702-P1057 Q62702-P1058 Q62702-P1192 Q62702-P85-S2 Q62702-P85-S3 Q62702-P85-S4
Text: SIEMENS NPN-Silizium-Fototransistor NEU: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor NEW: Silicon NPN Phototransistor with Daylight Filter BP 103B BP 103 BF Area not flat Emitter _ 2 5 .2 _ J 2 4.2 Collector 8.2 Approx. weight 0 .2 g
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/PCEtfpcE25Â
23SL0S
oE025Â
Phototransistor bp 101
fototransistor led
bf 252
SFH 207
Q62702-P1057
Q62702-P1058
Q62702-P1192
Q62702-P85-S2
Q62702-P85-S3
Q62702-P85-S4
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Untitled
Abstract: No abstract text available
Text: SILICON TRANSISTOR 2SC1009A F M /A M RF AMPLIFIER. M IXER, OSCILLATOR. CONVERTER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in m illim eters • High Gain Bandwidth Product: f j » 250 MHz TYP. 2 .e ± 0 -2 • Low Output Capacitance: C0b = 1.0 pF TYP.
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2SC1009A
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