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Abstract: No abstract text available
Text: Technische Information / Technical Information Schnelle Diode Fast Diode D 1181 SX 60T S Vorläufige Daten . Preliminary Data . Features • Specially designed for operation with small snubber • 140°C maximum junction temperature • Low losses, soft recovery
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transistor NEC 8772 p
Abstract: q2n2222a 225261148036 IRFB4410 EQUIVALENT IRFB4410 q2n222 transistor 8772 nec 8772 P DO333 transistor 355A sot23
Text: AND8300/D NCP4302 Increasing a Notebook Adaptor's Efficiency using Synchronous Rectification http://onsemi.com Prepared by: Terry Allinder ON Semiconductor Introduction General Description The NCP4302 is a full featured controller and driver that provide all the control and protection functions necessary
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AND8300/D
NCP4302
NCP4302,
TL431
transistor NEC 8772 p
q2n2222a
225261148036
IRFB4410 EQUIVALENT
IRFB4410
q2n222
transistor 8772
nec 8772 P
DO333
transistor 355A sot23
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nec2501
Abstract: nec2501a NEC2501* Opto coupler transistor NEC 8772 p q2n2222a q2n222 zener diode 1.5KE250A MBR20H100 ac power adapter for notebook schematic NCP1230D65R2
Text: AND8300/D NCP4302 Increasing a Notebook Adaptor's Efficiency using Synchronous Rectification http://onsemi.com Prepared by: Terry Allinder ON Semiconductor Introduction General Description The NCP4302 is a full featured controller and driver that provide all the control and protection functions necessary
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AND8300/D
NCP4302
NCP4302,
TL431
nec2501
nec2501a
NEC2501* Opto coupler
transistor NEC 8772 p
q2n2222a
q2n222
zener diode 1.5KE250A
MBR20H100
ac power adapter for notebook schematic
NCP1230D65R2
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1N5408 equivalent
Abstract: Flyback Transformer Design EXCEL how to calculate SM power Supply Transformer BAL19LT1 Flyback Transformer Design EXCEL SPREADSHEET CTX22-16134 MC33260 application k 2645 MOSFET CTX22 diode zener c23
Text: AND8154/D NCP1230 90 Watt, Universal Input Adapter Power Supply Prepared by: Terry Allinder terry.allinder@onsemi.com ON Semiconductor http://onsemi.com APPLICATION NOTE General Description The NCP1230 implements a standard current mode control architecture. It’s an ideal candidate for applications
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AND8154/D
NCP1230
1N5408 equivalent
Flyback Transformer Design EXCEL
how to calculate SM power Supply Transformer
BAL19LT1
Flyback Transformer Design EXCEL SPREADSHEET
CTX22-16134
MC33260 application
k 2645 MOSFET
CTX22
diode zener c23
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dnp 011
Abstract: tk5p60v sm 6136 b triac 131-6 zener diode 400v 0.5a R/BT 8046 triac
Text: Application Note 1845 ISL1904DEMO1Z: Offline Triac Dimmable Isolated LED Driver Introduction Design Specifications The ISL1904DEMO1Z demo board converts a high line AC input voltage to a 18V, 700mA DC output. It is implemented with Intersil’s critical conduction mode CrCM LED driver
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ISL1904DEMO1Z:
ISL1904DEMO1Z
700mA
ISL1904.
ISL1904,
ISL1904FAZ
H2511-02152-1/16W1
H2511-04990-1/16W1
dnp 011
tk5p60v
sm 6136 b
triac 131-6
zener diode 400v 0.5a
R/BT 8046 triac
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TRANSISTOR C2328
Abstract: SLMWTF01
Text: Si4731-DEMO Si4731 D EMO B OARD U SER ’ S G UIDE 1. Features Worldwide FM band support, 76–108 MHz Worldwide AM band support, 520–1710 kHz Auto seek/auto scan 48 FM and 48 AM station presets FM Radio Data Services RDS decoding (Pi Pty Ps RT CT AF displays)
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Si4731-DEMO
Si4731
TRANSISTOR C2328
SLMWTF01
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IN961
Abstract: OPA111 OPA627 OPA627AM OPA627AP OPA627BM OPA637 OPA637AM OPA637BM TO-99 METAL PACKAGE
Text: OPA627 OPA637 Precision High-Speed Difet ® OPERATIONAL AMPLIFIERS FEATURES APPLICATIONS ● VERY LOW NOISE: 4.5nV/√Hz at 10kHz ● FAST SETTLING TIME: OPA627—550ns to 0.01% OPA637—450ns to 0.01% ● PRECISION INSTRUMENTATION ● ● ● ● ● ●
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OPA627
OPA637
10kHz
OPA627--550ns
OPA637--450ns
OPA627:
OPA637:
OPA627
IN961
OPA111
OPA627AM
OPA627AP
OPA627BM
OPA637
OPA637AM
OPA637BM
TO-99 METAL PACKAGE
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IN961
Abstract: hp 6730s OPA627 OPA637 0807HS OPA627sm HP 2835 OPA111 OPA627AM OPA627BM
Text: OPA627 OPA637 Precision High-Speed Difet ® OPERATIONAL AMPLIFIERS FEATURES APPLICATIONS ● VERY LOW NOISE: 4.5nV/√Hz at 10kHz ● FAST SETTLING TIME: OPA627—550ns to 0.01% OPA637—450ns to 0.01% ● PRECISION INSTRUMENTATION ● FAST DATA ACQUISITION
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OPA627
OPA637
10kHz
OPA627--550ns
OPA637--450ns
OPA627:
OPA637:
OPA627
OPA63xtended
OPA627/637.
IN961
hp 6730s
OPA637
0807HS
OPA627sm
HP 2835
OPA111
OPA627AM
OPA627BM
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d1n5406
Abstract: 3104j D1N54 TL431 model SPICE k 2645 MOSFET 1N5408 equivalent CTX22-16134 how to calculate SM power Supply Transformer Flyback Transformer Design EXCEL MH 7474
Text: AND8155/D NCP1231 90 Watt, Universal Input Adapter Power Supply Prepared by: Terry Allinder terry.allinder@onsemi.com ON Semiconductor http://onsemi.com APPLICATION NOTE General Description The NCP1231 implements a standard current mode control architecture. It’s an ideal candidate for applications
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AND8155/D
NCP1231
d1n5406
3104j
D1N54
TL431 model SPICE
k 2645 MOSFET
1N5408 equivalent
CTX22-16134
how to calculate SM power Supply Transformer
Flyback Transformer Design EXCEL
MH 7474
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0807HS
Abstract: Low Bias Current Amplifiers IN961 6730S OPA111 OPA627 OPA627AM OPA627BM OPA637 OPA637BM
Text: OPA627 OPA637 Precision High-Speed Difet ® OPERATIONAL AMPLIFIERS FEATURES APPLICATIONS ● VERY LOW NOISE: 4.5nV/√Hz at 10kHz ● FAST SETTLING TIME: OPA627—550ns to 0.01% OPA637—450ns to 0.01% ● PRECISION INSTRUMENTATION ● FAST DATA ACQUISITION
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OPA627
OPA637
10kHz
OPA627--550ns
OPA637--450ns
OPA627:
OPA637:
OPA627
OPA63s
OPA603
0807HS
Low Bias Current Amplifiers
IN961
6730S
OPA111
OPA627AM
OPA627BM
OPA637
OPA637BM
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dd 76 N powerblock
Abstract: powerblock dd 82 S 800 powerblock DD 76 N 1200 PB20S
Text: Fast Diode Modules Type Schnelle Dioden-Module V RRM V Ifrm sm Ifsm ö3dt I f AV m / T c V TO A A A2s A/°C V 10 ms, 10 ms, T"v| max Tvi max ,103 V R SM = VRRm +100V (50Hz) rT m Irm A °c /w Tv,= Tv,= Tv,= 180° el Tvj max Tvi max max -di/dt = sin outline
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DD122S
PB50ND
B50/1
43DP9
dd 76 N powerblock
powerblock dd 82 S 800
powerblock DD 76 N 1200
PB20S
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d 379
Abstract: No abstract text available
Text: v C o rp . he diode experts SCOTTSDALE, A Z For more information call: SANTA ANA, CA 602 941-6300 SM 1.4KESDS.O thru SM 1.4KESD 170A SURFACE MOUNT Features 1 Protects S ensitive C ircu its From S h o rt D u ra tio n Fast Rise Tim e Tran sien ts such as Ele ctro -S tatic-D isch a rg e (ESD) or Electrical
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quD30A
4KESD33A
4KESD36A
4KESD40
4KESD40A
4KESD43
S043A
4KESD45A
4KESD48
4KESD48A
d 379
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dd 22 s 800
Abstract: fast diode SM 46 DD 53 S 1200 K
Text: Fast diode modules Type If r m s m V rrm V r sm = V rrm + 5 0 V 1 Ip S M /'¡2dt V TO) It Irm R th jc 10 ms, 10 ms, t„ = tv,= t, 180 “el tv i max t ,i max tv, max tv j max -di/dt - I favm ^ c = tv j max R th C K tv , m a x Outline sin. 100 A/us A V A
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SE110N
Abstract: A4032 SE130N SE005N SE090N high hfe transistor FMQG5FM SLA7022M SE012 3gu diode
Text: Index Type No. Order Type No. Type Type No. 2SA1186 Type 16 2SC3830 16 2SC3831 16 2SC3832 19 2SC3833 2SA1294 1R 2SC3834 2SA1295 16 2SC3835 16 2SC3851 General Purpose Transistor 19 16 2SC3852 Low VcE(sat)-High hFE Transistor 18 19 2SC3856 16 2SC3857 Transistors for Audio Am plifier (Single Emitter)
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2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1488
2SA1492
SE110N
A4032
SE130N
SE005N
SE090N
high hfe transistor
FMQG5FM
SLA7022M
SE012
3gu diode
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1rf9530
Abstract: No abstract text available
Text: International k? r Rectifier HEXFET Pow er M O S F E T 4655452 □D14642 33E PD-9.320G IINR IRF9530 INTERNATIONAL RECTIFIER bSE D Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements
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D14642
IRF9530
O-220
1rf9530
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Untitled
Abstract: No abstract text available
Text: • International g ü Rectifier PD-9.623A IRFBC20 INTERNATIONAL R EC TIFIER HEXFET Power MOSFET • • • • • 46SSHS2 DOmTSG 3TT H I N R Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements bSE D
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IRFBC20
46SSHS2
O-220
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transistor 3904
Abstract: transistor 2222a transistor 2222a sot 89 sot 23 transistor 70.2 2907a TRANSISTOR PNP pnp transistor 800v 2907A PNP bipolar transistors transistor 5 Amp 700 volt transistor A92 SOT 89 3906 npn
Text: N e w T o T h e 2 3 E D t T i a N - . . c o M Small Signal Transistors High Current NPN and PNP Transistors in an SOT-23 package. These new small signal transistors provide an increased current capability and high hpE- CMPT491E CMPT591E - 1 Amp Low VCE SAT NPN High Current Transistor See page 338.
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OT-23
CMPT491E
CMPT591E
OT-23
OT-223
CMPTA46
CMPTA96
CZTA46
CZTA96
transistor 3904
transistor 2222a
transistor 2222a sot 89
sot 23 transistor 70.2
2907a TRANSISTOR PNP
pnp transistor 800v
2907A PNP bipolar transistors
transistor 5 Amp 700 volt
transistor A92 SOT 89
3906 npn
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1RFZ46N
Abstract: IC 282 SD28A 1rfz46 IRFZ46N IQR9246 IRF1010 marking rur. diode BBV marking MOSFET IRFZ46N
Text: International rai Rectifier PD - 9.1277B IRFZ46N PRELIMINARY HEXFET Power M O SFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 55V R o s o n = 0 . 0 2 0 Q lD = 46A Description
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1277B
IRFZ46N
O-220
resistR9246
1RFZ46N
IC 282
SD28A
1rfz46
IQR9246
IRF1010
marking rur. diode
BBV marking
MOSFET IRFZ46N
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Untitled
Abstract: No abstract text available
Text: □ - □ 7 . V 'C X - Y Super Fast Recovery Diode Twin Diode OUTLINE DIMENSIONS D 2 0 L C 4 0 400V 20A • tr r 5 0 n s • 7 ,llÆ - ,lb K m •SRSÎÜ • 7 5 -rjn - f- ju • ^ B s O A , FA RATINGS Absolute Maximum Ratings a i 5 E-fSymbol Conditions a
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D20LC40
50HziE5K
D20LC40
J515-5
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET 1PS74SB23 Schottky barrier diode 1999 Apr 26 Product specification Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification Schottky barrier diode FEATURES 1PS74SB23 PINNING • Ultra fast sw itching speed
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1PS74SB23
115002/00/01/pp8
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mde 108 27.0
Abstract: No abstract text available
Text: SGS-ÏHOMSON SM15T6V8A/220A SM15T6V8CA/220CA KÆD ^ [EL[iOÏÏ^®^D gi TRANSIL FEATURES • PEAK PULSE POWER: 1500 W (10/1000|is ■ BREAKDOWN VOLTAGE RANGE : From 6.8 V to 220 V ■ UNI AND BIDIRECTIONAL TYPES ■ LOW CLAMPING FACTOR ■ FAST RESPONSETIME
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SM15T6V8A/220A
SM15T6V8CA/220CA
mde 108 27.0
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STM date code TO-220
Abstract: No abstract text available
Text: SM15T6V8A/220A SM15T6V8CA/220CA TRANS IL FEATURES • PEAK PULSE POWER: 1500 W 10/1000|is ■ BREAKDOWN VOLTAGE RANGE : From 6.8 V to 220 V ■ UNI AND BIDIRECTIONAL TYPES ■ LOW CLAMPING FACTOR ■ FAST RESPONSETIME ■ UL RECOGNIZED DESCRIPTION Transil diodes provide high overvoltage protection
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SM15T6V8A/220A
SM15T6V8CA/220CA
STM date code TO-220
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st smd diode marking code
Abstract: smd diode marking code jl an smd diode marking code SM
Text: i I I > I • PD-9.1008 International I s l Rectifier IRF720S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements
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IRF720S
SMD-220
D-6380
D0215b5
st smd diode marking code
smd diode marking code jl an
smd diode marking code SM
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Untitled
Abstract: No abstract text available
Text: SUPER FAST RECTIFIERS PLASTIC MATERIAL USED CARRIES UL 94V-0 OPERATING AND STORAGE TEMPERATURE -65 ”C to +150 °C M axim um Average Rectified Current @ Half-W ave Resistive Load 60Hz Maxim um Forward Peak Surge Current @ 8.3ms Maxim um Reverse Current @ PRV
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DO-201
DO-41
Q007L
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