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    FAST RECOVERY DIODE 1000V 10A Search Results

    FAST RECOVERY DIODE 1000V 10A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    FAST RECOVERY DIODE 1000V 10A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SC371-10A

    Abstract: TL130 SC371 diode 1000V 10a fast recovery diode 1000v 10A
    Text: SC371-10A 1000V / 0.5A Fast Recovery Diode Outline drawings, mm (FRD) 3.0 ± 0.2 Features + 0.2 0.1 - 0.1 2.6 ± 0.2 2.5 ± 0.2 Marking 2MIN 1.35 ± 0.4 Surface-mount device Low VF 1.35 ± 0.4 1.2 ± 0.2 + 0.4 - 0.1 5.1 Super high speed switching Marking


    Original     		SC371-10A SC371-10A TL130 SC371 diode 1000V 10a fast recovery diode 1000v 10A PDF

    TL130

    Abstract: SC371-10A 02 MARKING diode 1000V 0.5a
    Text: SC371-10A 1000V / 0.5A Fast Recovery Diode Outline drawings, mm (FRD) 3.0 ± 0.2 Features 1.35 ± 0.4 Surface-mount device Low VF + 0.2 0.1 - 0.1 2.6 ± 0.2 2.5 ± 0.2 Marking 2MIN 5.1 1.35 ± 0.4 1.2 ± 0.2 + 0.4 - 0.1 Super high speed switching Marking


    Original     		SC371-10A TL130 SC371-10A 02 MARKING diode 1000V 0.5a PDF

    Untitled

    Abstract: No abstract text available
    Text: SC371-10A 1000V / 0.5A Fast Recovery Diode Outline drawings, mm (FRD) 3.0 ± 0.2 Features + 0.2 0.1 - 0.1 2.6 ± 0.2 2.5 ± 0.2 Marking 1.35 ± 0.4 Surface-mount device Low VF 2MIN 5.1 1.35 ± 0.4 1.2 ± 0.2 + 0.4 - 0.1 Super high speed switching Marking


    Original     		SC371-10A et1000 PDF

    5AAFT

    Abstract: No abstract text available
    Text: ERD27ERD77 10A*1000V »±'<9-*y*-K • a « g a E ? y *-K : Outline Drawings FAST RECOVERY DIODE : Features • Glass passivated ch ip H ig h reverse v o lta g e c a p a b ility • 7>9"sY'ffc S tu d m o u n te d : Applications 9 S w itc h in g p o w e r s u p p lie s


    OCR Scan     		ERD27ERD77 I95t/R89) 5AAFT PDF

    High-Rel Discrete Semiconductors

    Abstract: fast recovery diode 1000v 10A fast recovery diode 400v 5A fast recovery diode 600v 5A IN4954 150a 400v diode bridge diode 50v 5A 3-Phase Full-Wave Bridge Rectifier Zener Diode Glass 50v DIODE RECTIFIER BRIDGE SINGLE 55a 600v
    Text: 2010 Catalog High-Rel Discrete Semiconductors Assembly Products Semtech’s Strategy in Discrete Products is to supply devices, either in axial, surface-mount or custom assembly configurations, that are rugged in design and in packages that are both hermetic and varied


    Original     		1N5415 1N5420 1N5550 1N5554 SCSFF05, SCSFF10, SCSFF15 SCSM05, PDAcatalog2010 High-Rel Discrete Semiconductors fast recovery diode 1000v 10A fast recovery diode 400v 5A fast recovery diode 600v 5A IN4954 150a 400v diode bridge diode 50v 5A 3-Phase Full-Wave Bridge Rectifier Zener Diode Glass 50v DIODE RECTIFIER BRIDGE SINGLE 55a 600v PDF

    ka3525 12v to 230v inverters circuit diagrams

    Abstract: smps circuit diagram 450w KA3525 KA3525 inverter FSD210 dip-8 KA3525A FSD200 equivalent fan7610 KA3525A application note 500w smps audio amplifier circuit diagram
    Text: AC/DC Switch Mode Power Supply Design Guide www.fairchildsemi.com AC/DC Switch Mode Power Supply Design Guide Table Of Contents Product Information Total


    Original     		Power247TM, ka3525 12v to 230v inverters circuit diagrams smps circuit diagram 450w KA3525 KA3525 inverter FSD210 dip-8 KA3525A FSD200 equivalent fan7610 KA3525A application note 500w smps audio amplifier circuit diagram PDF

    igbt induction cooker

    Abstract: FGA50N100 "induction cooker" circuit induction cooker circuit with IGBT induction heating cooker IC for induction cooker FGA50N100BNTDTU IGBT 600V 30A TO-3P IGBT 1000V 60A BNTD
    Text: FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Features Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for


    Original     		FGA50N100BNTD FGA50N100BNTD FGA50N100BNTDTU igbt induction cooker FGA50N100 "induction cooker" circuit induction cooker circuit with IGBT induction heating cooker IC for induction cooker IGBT 600V 30A TO-3P IGBT 1000V 60A BNTD PDF

    Quasi-resonant Converter for induction cooker

    Abstract: 1kw single phase IGBT inverter IC Module inverter Controller PWM 1kw igbt induction cooker induction heating cooker motor driver full bridge mosfet 10A 100V induction cooker universal AC Motor soft start induction heating 230V pwm inverter single phase UPS
    Text: 1 Smart Power Module Series 10A to 20A Smart Power Module SPM products in compact Dual In-line Packages (DIP) offer • Adjustable current protection level · Inverter power rating of 0.4kW, 0.75kW, 1kW and 1.4kW/100V AC to 253V AC


    Original     		4kW/100V FIN1025/FIN1026 Power247TM, Quasi-resonant Converter for induction cooker 1kw single phase IGBT inverter IC Module inverter Controller PWM 1kw igbt induction cooker induction heating cooker motor driver full bridge mosfet 10A 100V induction cooker universal AC Motor soft start induction heating 230V pwm inverter single phase UPS PDF

    ERD77-10

    Abstract: ERD27-10 ERD27 ERD77 diode 1000V 10a
    Text: ERD27•ERD77 10A·1000V 高速整流ダイオード FAST RECOVERY DIODE Outline Drawings Units mm 特長 ：Features 特長： · ガラスパシベーションチップ：Grass passivated chip · 逆電圧が高い:High reverse voltage capability · スタッド形：Stud mounted


    Original     		ERD27 ERD77 ERD27-10 ERD77-10 ERD27-10 ERD77-10 diode 1000V 10a PDF

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter PDF

    igbt induction cooker

    Abstract: induction cooker igbt 1000v 30a induction cooker circuit with IGBT IGBT 1000V .50A induction heating cooker fairchild induction cooker igbt for induction cooker FGA50N100BNTDTU IGBT 60A
    Text: tm FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Features Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for


    Original     		FGA50N100BNTD igbt induction cooker induction cooker igbt 1000v 30a induction cooker circuit with IGBT IGBT 1000V .50A induction heating cooker fairchild induction cooker igbt for induction cooker FGA50N100BNTDTU IGBT 60A PDF

    fairchild induction cooker

    Abstract: induction cooker circuit with IGBT igbt induction cooker FGA50N100BNTD FGA50N100BNTDTU igbt 1000v 30a induction cooker IC for induction cooker FGA50N100BN
    Text: FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Features Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for


    Original     		FGA50N100BNTD FGA50N100BNTD fairchild induction cooker induction cooker circuit with IGBT igbt induction cooker FGA50N100BNTDTU igbt 1000v 30a induction cooker IC for induction cooker FGA50N100BN PDF

    EE16 12V

    Abstract: SMD TRANSISTOR B7 EE16 transformer 5v 2.1a t1/epc17 TRANSFORMER smd transistor 12W 3 pins EE16-4 core transformer
    Text: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs ACT41X Rev 1.4 JUL 2013 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History 2013 - Jul - 22 Rev 1.4 Page 4.5 Update ACT410 5V2.1A application solution transformer and parameter.


    Original     		ACT41X ACT410 ACT413 EPC17) ACT411 12V1A ACT412 -11For EE16 12V SMD TRANSISTOR B7 EE16 transformer 5v 2.1a t1/epc17 TRANSFORMER smd transistor 12W 3 pins EE16-4 core transformer PDF

    1N4148 5t

    Abstract: y1 smd transistor transistor SMD Y1 smd transistor Y1 sot-23 smd transistor 24 sot23
    Text: ACT41X Product Brief, 06-Dec-12 ActivePSRTM Quasi-Resonant PWM Controller and overload conditions, it would enter auto restart mode including cycle-by-cycle current limiting. FEATURES • Patented Primary Side Regulation ACT41X is to achieve no overshoot and very short


    Original     		ACT41X 06-Dec-12 ACT41X 120kHz 1N4148 5t y1 smd transistor transistor SMD Y1 smd transistor Y1 sot-23 smd transistor 24 sot23 PDF

    induction cooker application notes

    Abstract: No abstract text available
    Text: tm FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Features Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for


    Original     		FGA50N100BNTD FGA50N100BNTD induction cooker application notes PDF

    GTO thyristor 4500V 4000A

    Abstract: FAST SWITCHING THYRISTOR ST GTO thyristor driver 10A fast Gate Turn-off Thyristor GTO thyristor GTO gate drive unit mitsubishi fast thyristor 200A gate control circuits GTO 4.5kv MITSUBISHI GATE TURN-OFF THYRISTOR gto gto Gate Drive circuit
    Text: IEEE Industry Applications Society Annual Meeting St. Louis, Missouri, October 12-16, 1998 A NEW GATE COMMUTATED TURN-OFF THYRISTOR AND COMPANION DIODE FOR HIGH POWER APPLICATIONS John F. Donlon*, Eric R. Motto*, M. Yamamoto*, Takahiko Iida* *Powerex, Incorporated, Youngwood, PA 15697 USA


    Original     		500V/1500A FD1500BV-90DA 500V/500A FD500JV-90DA GTO thyristor 4500V 4000A FAST SWITCHING THYRISTOR ST GTO thyristor driver 10A fast Gate Turn-off Thyristor GTO thyristor GTO gate drive unit mitsubishi fast thyristor 200A gate control circuits GTO 4.5kv MITSUBISHI GATE TURN-OFF THYRISTOR gto gto Gate Drive circuit PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10090HLL 1000V 10A 0.900Ω POWER MOS 7 R MOSFET TO-258 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT10090HLL O-258 O-258 PDF

    igbt 1000v 10A

    Abstract: No abstract text available
    Text: FGA50N100BNTD2 tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche


    Original     		FGA50N100BNTD2 FGA50N100BNTD2 igbt 1000v 10A PDF

    igbt induction cooker

    Abstract: induction heating cooker FGA50N100BNTD2 induction cooker circuit with IGBT induction cooker application notes induction cooker fairchild induction cooker fairchild induction heater induction cooker component induction heater
    Text: FGA50N100BNTD2 tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche


    Original     		FGA50N100BNTD2 FGA50N100BNTD2 igbt induction cooker induction heating cooker induction cooker circuit with IGBT induction cooker application notes induction cooker fairchild induction cooker fairchild induction heater induction cooker component induction heater PDF

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN PDF

    "induction cooker" circuit

    Abstract: induction cooker application notes FGL60N100BNTD fairchild induction cooker induction cooker circuit with IGBT IGBT FGL60N100BNTD igbt induction cooker induction cooker circuit induction heating cooker induction cooker use on component
    Text: FGL60N100BNTD NPT-Trench IGBT General Description Features Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for


    Original     		FGL60N100BNTD O-264 FGL60N100BNTD O-264-3 FGL60N100BNTDTU "induction cooker" circuit induction cooker application notes fairchild induction cooker induction cooker circuit with IGBT IGBT FGL60N100BNTD igbt induction cooker induction cooker circuit induction heating cooker induction cooker use on component PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet 12146 02/98 International M R Rectifier QUIETIR Series i o e t f . FAST SOFT RECOVERY RECTIFIER DIODE VF < 1.33V @ 10A t rr = 80ns VRRM 1000 to 1200V Description/Features The 10ETF. fast soft recovery QUIETIR rectifier series has been optimized for combined short


    OCR Scan     		10ETF. -220AC PDF

    400v 20A ultra fast recovery diode

    Abstract: 400v 50A DIODE BYV54V50 BYV72E100/150/200 power Diode 200V 10A BYV72E-100 DIODE SMD 10A sod 81 50V 200A ultra fast diode 600v 2A ultra fast recovery diode
    Text: Power Devices Ultra Fast Recovery Epitaxial Rectifiers in o rd e r o f cu rre n t rating (cont.) Package Outline Average Forward Current Repetitive Peak Reverse Voltage NonRepetitive Reverse Avalanche Energy Surge (NonRepetitive) Forward Current ’ f |A V | m ax.(1)


    OCR Scan     		BYV72E-100 BYV44-300* BYV74-300* BYT230PIV-200< BYV54V-50* OT-93 O-220AB BYD31D BYD43-20 BYV98 400v 20A ultra fast recovery diode 400v 50A DIODE BYV54V50 BYV72E100/150/200 power Diode 200V 10A DIODE SMD 10A sod 81 50V 200A ultra fast diode 600v 2A ultra fast recovery diode PDF

    10EPF12

    Abstract: No abstract text available
    Text: Bulletin I2188 rev. B 06/06 QUIETIR Series 10ETF.PbF FAST SOFT RECOVERY RECTIFIER DIODE Lead-Free "PbF" suffix VF < 1.33V @ 10A t rr = 80ns VRRM = 1000 - 1200V Description/ Features The 10ETF.PbF fast soft recovery QUIETIR rectifier series has been optimized for combined


    Original     		I2188 10ETF. 10EPF12 75E-04 32E-04 00E-07 37E-02 10EPF12 PDF