Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD BYR79 DIODE Preliminary ULTRA FAST-RECOVERY RECTIFIER DIODE DESCRIPTION The UTC BYR79 is a rectifier diode providing the designers with ultra-fast switching and low switching loss. It features low forward voltage drop, ultra fast reverse recovery times with very low stored
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BYR79
BYR79
BYR79L-6-TA2-T
BYR79G-6-TA2-T
QW-R601-028
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Untitled
Abstract: No abstract text available
Text: 2SF292200HYY 2SF292200HYY FAST RECOVERY DIODE CHIPS DESCRIPTION Ø 2SF292200HYY is a fast recovery diode chips fabricated in silicon epitaxial planar technology; Ø Fast recovery times; Ø High current capability; Ø High surge current capability; Ø Low forward voltage drop;
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2SF292200HYY
2SF292200HYY
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dissipator
Abstract: SDD216DK SDD216TT
Text: SDD216 77mm Fast Recovery DIODE 2500V / 2900Arms SPCO The SDD216 fast recovery diode is designed for use in voltage fed inverter circuits normally requiring the bypass function. Its relatively low recovery current and charge in combination with low thermal
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SDD216
2900Arms
SDD216
Tcase70oC
00A/us
125oC
SDD216DK
SDD216TT
COrporation175
dissipator
SDD216DK
SDD216TT
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Marking A2t
Abstract: NTE6129 9300A
Text: NTE6129 Silicon Power Rectifier Diode 700 Amp, DO200AB Features: D High Power, Fast Recovery Time D High Current Capability D Low Forward Recovery Applications: D Snubber Diode for GTO D High Voltage Free−Wheeling Diode D Fast Recovery Rectifier Applications
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NTE6129
DO200AB
Marking A2t
NTE6129
9300A
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BYR79-600
Abstract: byr79
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary BYR79-600 DIODE ULTRA FAST-RECOVERY RECTIFIER DIODE DESCRIPTION The UTC BYR79-600 is a rectifier diode providing the designers with ultra-fast switching and low switching loss. It features low forward voltage drop, ultra fast reverse recovery times with very low
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BYR79-600
BYR79-600
BYR79L-600-TA2
BYR79G-600-TA2
O-220AC
QW-R601-028
byr79
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary BYR79-600 DIODE ULTRA FAST-RECOVERY RECTIFIER DIODE DESCRIPTION The UTC BYR79-600 is a rectifier diode providing the designers with ultra-fast switching and low switching loss. It features low forward voltage drop, ultra fast reverse recovery times with very low
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BYR79-600
BYR79-600
BYR79L-600-TA2
BYR79G-600-TA2
O-220-2
QW-R601-028
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Untitled
Abstract: No abstract text available
Text: DH2x60-18A Sonic Fast Recovery Diode = High Performance Fast Recovery Diode Low Loss and Soft Recovery Anti-parallel legs Part number Backside: Isolated Features / Advantages: Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour
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DH2x60-18A
60747and
20110908b
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srps
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary BYR79-600 DIODE ULTRA FAST-RECOVERY RECTIFIER DIODE DESCRIPTION The UTC BYR79-600 is a rectifier diode providing the designers with ultra-fast switching and low switching loss. It features low forward voltage drop, ultra fast reverse recovery times with very low
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BYR79-600
BYR79-600
BYR79L-600-ues
QW-R601-028
srps
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Marking A2t
Abstract: diode marking 432 high power rectifier diode single NTE6129 9730A
Text: NTE6129 Silicon Power Rectifier Diode, 700 Amp Features: D High Power, Fast Recovery Time D High Current Capability D Low Forward Recovery Applications: D Snubber Diode for GTO D High Voltage Free–Wheeling Diode D Fast Recovery Rectifier Applications Ratings and Characteristics:
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NTE6129
Marking A2t
diode marking 432
high power rectifier diode single
NTE6129
9730A
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Untitled
Abstract: No abstract text available
Text: DH2x61-16A Sonic Fast Recovery Diode = High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number Backside: Isolated 2 1 3 4 Features / Advantages: Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour
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DH2x61-16A
60747and
20110908b
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Untitled
Abstract: No abstract text available
Text: DH2x61-18A Sonic Fast Recovery Diode = High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number Backside: Isolated 2 1 3 4 Features / Advantages: Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour
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DH2x61-18A
60747and
20110908b
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diode hitachi
Abstract: LS190N 1000-1 POWER MODULE
Text: DIODE MODULE Spec.No.SR2-SP-10001 R0 MDM800H45E2-H P1 Target Specification OUTLINE DRAWING FEATURES ∗ Low Reverse Recovery Loss diode module. ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure.
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SR2-SP-10001
MDM800H45E2-H
diode hitachi
LS190N
1000-1 POWER MODULE
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D45E60
Abstract: No abstract text available
Text: IDP45E60 Fast Switching Switching Diode Emitter Controlled Diode Fast Product Summary Features VRRM 600 V IF 45 A VF 1.5 V T jmax 175 °C • 600V Emitter Controlled technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage
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IDP45E60
PG-TO220-2
IEC61249-2-21
D45E60
D45E60
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A881A
Abstract: No abstract text available
Text: A881A 77mm Fast Recovery DIODE 4500V / 1250Arms SPCO The A881A fast recovery diode is designed as a parallel mate for 1250 Arms GTO's used in voltage fed inverter circuits normally requiring the bypass function. Its relatively low recovery current and charge
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A881A
1250Arms
A881A
00A/us
90a/spec3:
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Untitled
Abstract: No abstract text available
Text: DIODE MODULE Spec.No.SR2-SP-10001 R1 MDM800H45E2-H Target Specification FEATURES ∗ Low Reverse Recovery Loss diode module. ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes.
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SR2-SP-10001
MDM800H45E2-H
MDM800H45r
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A796
Abstract: No abstract text available
Text: A796 53mm Fast Recovery DIODE 1500 - 2500V SPCO The A796 fast recovery diode is designed as a parallel mate for GTO’s used in voltage fed inverter circuits normally requiring the bypass function. Its relatively low recovery current and charge in combination with
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forwar10
00A/us
A796
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A881B
Abstract: 4500v
Text: A881B 77mm Fast Recovery DIODE 4500V / 1950Arms The A881B fast recovery diode is designed as parallel mate for 3000A IT Q M GTO’s used in voltage fed inverter circuits normally requiring the bypass function. Its relatively low recovery current and charge
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A881B
1950Arms
A881B
125oC
case70oC
00A/us
11\a881b
4500v
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A796
Abstract: No abstract text available
Text: A796 53mm Fast Recovery DIODE 1500 - 2500V The A796 fast recovery diode is designed as a parallel mate for GTO’s used in voltage fed inverter circuits normally requiring the bypass function. Its relatively low recovery current and charge in combination with
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A796
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DH60-14A
Abstract: No abstract text available
Text: DH60-14A V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 1400 V 60 A 230 ns Part number 3 1 Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips
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DH60-14A
60747and
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DH60-14A
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DH60-14A
Abstract: No abstract text available
Text: DH60-16A V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 1600 V 60 A 230 ns Part number 3 1 Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips
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DH60-16A
60747and
20110908b
DH60-14A
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Abstract: No abstract text available
Text: DHG60I600HA advanced Sonic Fast Recovery Diode VRRM = 600 V I FAV = 60 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DHG60I600HA Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-247
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DHG60I600HA
O-247
60747and
20130829a
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DH60-14A
Abstract: No abstract text available
Text: DH60-18A V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 1800 V 60 A 230 ns Part number 3 1 Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips
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DH60-18A
60747and
20110908b
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GW50HF60SD
Abstract: ST IGBT code marking STGW50HF60SD FIGURE15
Text: STGW50HF60SD 60 A, 600 V, very low drop IGBT with soft and fast recovery diode Features • Very low on-state voltage drop ■ Low switching off ■ High current capability ■ Very soft ultra fast recovery antiparallel diode Application ■ PV inverter ■
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STGW50HF60SD
O-247
STGW50HF60SD
GW50HF60SD
O-247
ST IGBT code marking
FIGURE15
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BY359
Abstract: BY359-1500 BY359-1500S diode BY359 BY359-1500,127
Text: Philips Semiconductors Product specification Damper diode fast, high-voltage GENERAL DESCRIPTION Glass-passivated double diffused rectifier diode in a plastic envelope featuring low forward voltage drop, fast reverse recovery and soft recovery characteristic. The device is
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O220AC
BY359-1500
BY359-1500S
BY359
BY359-1500
BY359-1500S
diode BY359
BY359-1500,127
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