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    FBGA 80 PACKAGE Search Results

    FBGA 80 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH9R00CQ5 Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH1R306PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPHR8504PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation

    FBGA 80 PACKAGE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    JEDEC TRAY DIMENSIONS

    Abstract: JEDEC tray standard fBGA package tray 129-pin JEDEC TRAY DIMENSIONS FBGA FBGA FBGA tray JEDEC FBGA fBGA 80 package
    Text: TRAY CONTAINER UNIT : mm 10x26=260 9.30 12.80 9.30 11.80 295.0 10.00 315.0 322.6 SECTION A – A' 9.30 Applied Package (5.89) (5.62) 9.00 7.62 10.35 135°CMAX. 7 NEC 115.2 FBGA9×9ESP 135.9 PPE A' A Quantity (pcs) 73-pin Plastic FBGA (9×9) 80-pin Plastic FBGA (9×9)


    Original     		73-pin 80-pin 129-pin 141-pin SSD-A-H7113-2 JEDEC TRAY DIMENSIONS JEDEC tray standard fBGA package tray JEDEC TRAY DIMENSIONS FBGA FBGA FBGA tray JEDEC FBGA fBGA 80 package PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.2E PAGE MODE FLASH MEMORY CMOS 96M 6M x 16 BIT MBM29QM96DF-65/80 • GENERAL DESCRIPTION The MBM29QM96DF is 96M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 6M words by 16 bits. The device is offered in a 80-ball FBGA package. This device is designed to be programmed


    Original     		MBM29QM96DF-65/80 MBM29QM96DF 96M-bit, 80-ball F0212 PDF

    SA158

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.1E PAGE MODE FLASH MEMORY CMOS 96M 6M x 16 BIT MBM29QM96DF-65/80 • GENERAL DESCRIPTION The MBM29QM96DF is 96M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 6M words by 16 bits. The device is offered in a 80-ball FBGA package. This device is designed to be programmed


    Original     		MBM29QM96DF-65/80 MBM29QM96DF 96M-bit, 80-ball SA158 PDF

    SA204

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20900-1E PAGE MODE FLASH MEMORY CMOS 96M 6M x 16 BIT MBM29QM96DF-65/80 • GENERAL DESCRIPTION The MBM29QM96DF is 96M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 6M words by 16 bits. The device is offered in a 80-ball FBGA package. This device is designed to be programmed in-system


    Original     		DS05-20900-1E MBM29QM96DF-65/80 MBM29QM96DF 96M-bit, 80-ball MBM29QM96DF F0306 SA204 PDF

    Untitled

    Abstract: No abstract text available
    Text: V54C3256 16/80/40 4VD*I 256Mbit SDRAM, INDUSTRIAL TEMPERATURE 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 System Frequency (fCK) 166 MHz 143 MHz 143 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns Clock Access Time (tAC3) CAS Latency = 3


    Original     		V54C3256 256Mbit x16Mbit PDF

    V54C325616

    Abstract: No abstract text available
    Text: V54C3256 16/80/40 4VD*I 256Mbit SDRAM, INDUSTRIAL TEMPERATURE 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 System Frequency (fCK) 166 MHz 143 MHz 143 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns Clock Access Time (tAC3) CAS Latency = 3


    Original     		V54C3256 256Mbit x16Mbit V54C325616 PDF

    Untitled

    Abstract: No abstract text available
    Text: V54C3256 16/80/40 4VG 256Mbit SDRAM (3.0~3.3) VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 System Frequency (fCK) 166 MHz 143 MHz 143 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns


    Original     		V54C3256 256Mbit x16Mbit PDF

    Untitled

    Abstract: No abstract text available
    Text: V54C3256 16/80/40 4VD*I 256Mbit SDRAM, INDUSTRIAL TEMPERATURE 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3


    Original     		V54C3256 256Mbit x16Mbit PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MARKETING REOUIREMENTS DOCUMENT AE1.3E PAGE MODE FLASH MEMORY CMOS 64M 4M x 16 BIT MBM29QD64DF 80 • GENERAL DESCRIPTION The MBM29QD64DF is 64M-bit, 2.5 V-only Page mode and dual operation Flash memory organized as 4M words of 16 bits each . The device is offered in a 64-ball FBGA package. This device is designed to be


    Original     		MBM29QD64DF 64M-bit, 64-ball PDF

    Untitled

    Abstract: No abstract text available
    Text: V54C3256 16/80/40 4VD 256Mbit SDRAM (3.0~3.3) VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 System Frequency (fCK) 166 MHz 143 MHz 143 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns


    Original     		V54C3256 256Mbit x16Mbit PDF

    Untitled

    Abstract: No abstract text available
    Text: V54C3256 16/80/40 4VB 256Mbit SDRAM 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns


    Original     		V54C3256 256Mbit x16Mbit PDF

    Untitled

    Abstract: No abstract text available
    Text: V54C3256 16/80/40 4VD 256Mbit SDRAM 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns


    Original     		V54C3256 256Mbit x16Mbit PDF

    Untitled

    Abstract: No abstract text available
    Text: V54C3256 16/80/40 4VD 256Mbit SDRAM 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns


    Original     		V54C3256 256Mbit x16Mbit PDF

    SA266-SA269

    Abstract: SA193
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20910-2E BURST MODE FLASH MEMORY CMOS 128M 8M x 16 BIT MBM29BS/FS12DH 15 • DESCRIPTION The MBM29BS/FS12DH is a 128 Mbit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 8M words of 16 bits each. The device offered in a 80-ball FBGA package. This device is designed to be programmed


    Original     		DS05-20910-2E MBM29BS/FS12DH 80-ball F0312 SA266-SA269 SA193 PDF

    A1700

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 64M 4M x 16 BIT MBM29QM64DF-65/80 • GENERAL DESCRIPTION The MBM29QM64DF is 64M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 4M words by 16 bits. The device is offered in a 64-ball FBGA package. This device is designed to be programmed


    Original     		MBM29QM64DF-65/80 MBM29QM64DF 64M-bit, 64-ball A1700 PDF

    Untitled

    Abstract: No abstract text available
    Text: V54C3256 16/80/40 4VD 256Mbit SDRAM 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns


    Original     		V54C3256 256Mbit x16Mbit PDF

    Untitled

    Abstract: No abstract text available
    Text: V54C3256 16/80/40 4VC 256Mbit SDRAM 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns


    Original     		V54C3256 256Mbit x16Mbit PDF

    Untitled

    Abstract: No abstract text available
    Text: V54C3256 16/80/40 4VH 256Mbit SDRAM 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 System Frequency (fCK) 166 MHz 143 MHz 143 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns Clock Access Time (tAC2) CAS Latency = 2


    Original     		V54C3256 256Mbit 16Mbit PDF

    Untitled

    Abstract: No abstract text available
    Text: V54C3256 16/80/40 4VD 256Mbit SDRAM 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 System Frequency (fCK) 166 MHz 143 MHz 143 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns Clock Access Time (tAC2) CAS Latency = 2


    Original     		V54C3256 256Mbit x16Mbit PDF

    V54C3128

    Abstract: No abstract text available
    Text: V54C3128 16/80/40 4VB*I 128Mbit SDRAM, INDUSTRIAL TEMPERATURE 3.3 VOLT, TSOP II / FBGA 8M X 16, 16M X 8, 32M X 4 6 7PC 7 System Frequency (fCK) 166 MHz 143 MHz 143 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns


    Original     		V54C3128 128Mbit PDF

    V54C3128

    Abstract: No abstract text available
    Text: V54C3128 16/80/40 4VB*I 128Mbit SDRAM, INDUSTRIAL TEMPERATURE 3.3 VOLT, TSOP II / FBGA 8M X 16, 16M X 8, 32M X 4 6 7PC 7 System Frequency (fCK) 166 MHz 143 MHz 143 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns


    Original     		V54C3128 128Mbit PDF

    Untitled

    Abstract: No abstract text available
    Text: V54C3256 16/80/40 4VH 256Mbit SDRAM 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 System Frequency (fCK) 166 MHz 143 MHz 143 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns Clock Access Time (tAC2) CAS Latency = 2


    Original     		V54C3256 256Mbit 16Mbit PDF

    Untitled

    Abstract: No abstract text available
    Text: V54C3256 16/80/40 4VH 256Mbit SDRAM 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 System Frequency (fCK) 166 MHz 143 MHz 143 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns Clock Access Time (tAC2) CAS Latency = 2


    Original     		V54C3256 256Mbit 16Mbit PDF

    A039h

    Abstract: 3A400
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.


    Original     		16/4M MBM29XL12DF 128M-bit, 90-pin 96-ball A039h 3A400 PDF