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    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> ! M G FC40V3742 3 .7 — 4 .2 G H z BAND 10W IN TE R N A L L Y M A TCH ED GaAs F E T ¡ DESCRIPTION The M G FC40V3742 is an internally impedance-matched GaAs power FET especially designed fo r use in 3.7 ~ 4.2 GHz band amplifiers. The herm etically sealed metal-ceramic


    OCR Scan     		PDF FC40V3742 FC40V3742

    MGFC40V3742A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 40V 3742A 3 .7 — 4.2G H z BAND 10W INTERNALLY M ATCHED GaAs F E T DESCRIPTION T h e M G F C 4 0 V 3 7 4 2 A is an internally im p e d a n c e -m a tc h e d GaAs pow er F E T especially designed fo r use in 3.7 ~ 4 .2


    OCR Scan     		PDF MGFC40V3742A MGFC40V3742A 10MHz

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> FC40V3742A 3 .7 — 4.2 G H z BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FC 40V 3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF MGFC40V3742A