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    onsemi FCD9N60NTM

    MOSFET N-CH 600V 9A DPAK
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    DigiKey FCD9N60NTM Digi-Reel 1
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    Bristol Electronics FCD9N60NTM 3
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    Avnet Silica FCD9N60NTM 143 Weeks 2,500
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    EBV Elektronik FCD9N60NTM 143 Weeks 2,500
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    Fairchild Semiconductor Corporation FCD9N60NTM

    9 A, 600 V, 0.385 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-252
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    Quest Components FCD9N60NTM 11
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    Vyrian FCD9N60NTM 2,429
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    Win Source Electronics FCD9N60NTM 1,355
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    Fairchild Semiconductor Corporation FCD9N60N

    Electronic Component
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    ComSIT USA FCD9N60N 39
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    FCD9N60 Datasheets (1)

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    FCD9N60NTM Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 9A DPAK Original PDF

    FCD9N60 Datasheets Context Search

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    fcd9n60

    Abstract: FCD9N60NTM 10s-108 FCD9N60N
    Text: SupreMOSTM FCD9N60NTM N-Channel MOSFET 600V, 9A, 0.385Ω Features Description • RDS on = 0.330Ω ( Typ.)@ VGS = 10V, ID = 4.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based


    Original     		FCD9N60NTM fcd9n60 FCD9N60NTM 10s-108 FCD9N60N PDF

    FCD9N60NTM

    Abstract: FCD9N60N
    Text: SupreMOSTM FCD9N60NTM N-Channel MOSFET 600V, 9A, 0.385mΩ Features Description • RDS on = 0.330Ω ( Typ.)@ VGS = 10V, ID = 4.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advance technology and precise process


    Original     		FCD9N60NTM FCD9N60NTM FCD9N60N PDF

    Untitled

    Abstract: No abstract text available
    Text: FCD9N60NTM N-Channel SupreMOS MOSFET 600 V, 9 A, 385 mΩ Features Description • RDS on = 330 mΩ (Typ.) @ VGS = 10 V, ID = 4.5 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from


    Original     		FCD9N60NTM PDF

    FCD9N60

    Abstract: No abstract text available
    Text: SuperMOSTM FCD9N60NTM N-Channel MOSFET 600V, 9A, 0.385mΩ Features Description • RDS on = 0.330Ω ( Typ.)@ VGS = 10V, ID = 4.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advance technology and precie process


    Original     		FCD9N60NTM FCD9N60NTM FCD9N60 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF