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onsemi FCH76N60N MOSFET N-CH 600V 76A TO247-3
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DigiKey	FCH76N60N	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
TME	FCH76N60N				1	1 $24.53 10 $22.13 100 $19.64 1000 $17.56 10000 $17.56	Get Quote
Rochester Electronics LLC FCH76N60N POWER FIELD-EFFECT TRANSISTOR, 7
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DigiKey	FCH76N60N	Bulk			20	1 - 10 - 100 $15.13 1000 $15.13 10000 $15.13	Buy Now
Rochester Electronics LLC FCH76N60NF POWER FIELD-EFFECT TRANSISTOR, 7
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DigiKey	FCH76N60NF	Bulk			24	1 - 10 - 100 $12.89 1000 $12.89 10000 $12.89	Buy Now
onsemi FCH76N60NF MOSFET N-CH 600V 72.8A TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FCH76N60NF	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	FCH76N60NF		5,449		1	1 $12.39 10 $12.39 100 $11.65 1000 $10.53 10000 $10.53	Buy Now
TME	FCH76N60NF				1	1 $20.89 10 $18.81 100 $16.63 1000 $14.96 10000 $14.96	Get Quote
Fairchild Semiconductor Corporation FCH76N60N
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	FCH76N60N		300			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	FCH76N60N		240			1 $19.17 10 $19.17 100 $14.91 1000 $13.632 10000 $13.632	Buy Now

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FCH76N60 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FCH76N60N		Fairchild Semiconductor	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 76A TO-247		Original	PDF
FCH76N60NF		Fairchild Semiconductor	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 72.8A TO247-3		Original	PDF

FCH76N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
FCH76N60 Abstract: No abstract text available Text: SupreMOS TM FCH76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description o • 650V @TJ = 150 C The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based	Original	FCH76N60N FCH76N60N 218nC) FCH76N60	PDF
FCH76N60 Abstract: No abstract text available Text: SupreMOS FCH76N60NF tm 600V N-Channel MOSFET, FRFET Features Description • RDS on = 28.7mΩ ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based	Original	FCH76N60NF FCH76N60NF 230nC) FCH76N60	PDF
FCH76N60NF Abstract: No abstract text available Text: TM SupreMOS FCH76N60NF tm 600V N-Channel MOSFET, FRFET Features Description • RDS on = 28.7mΩ ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based	Original	FCH76N60NF 230nC) FCH76N60NF	PDF
fch76n60nF Abstract: No abstract text available Text: FCH76N60NF N-Channel SupreMOS FRFET® MOSFET 600 V, 72.8 A, 38 mΩ Features Description • RDS on = 28.7 mΩ (Typ.)@ VGS = 10 V, ID = 38 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology	Original	FCH76N60NF FCH76N60NF	PDF
Untitled Abstract: No abstract text available Text: TM SupreMOS FCH76N60NF tm 600V N-Channel MOSFET, FRFET Features Description • RDS on = 28.7mΩ ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based	Original	FCH76N60NF 230nC)	PDF
Untitled Abstract: No abstract text available Text: FCH76N60NF N-Channel SupreMOS FRFET® MOSFET 600 V, 72.8 A, 38 mΩ Features Description • RDS on = 28.7 mΩ (Typ.) @ VGS = 10 V, ID = 38 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology	Original	FCH76N60NF	PDF
FCH76N60NF Abstract: No abstract text available Text: FCH76N60NF N-Channel SupreMOS FRFET® MOSFET 600 V, 72.8 A, 38 mΩ Features Description • RDS on = 28.7 mΩ (Typ.) @ VGS = 10 V, ID = 38 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology	Original	FCH76N60NF FCH76N60NF	PDF
Untitled Abstract: No abstract text available Text: FCH76N60N N-Channel SupreMOS MOSFET 600 V, 76 A, 36 mΩ Features Description • RDS on = 28 mΩ (Typ.) @ VGS = 10 V, ID = 38 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from	Original	FCH76N60N	PDF
Untitled Abstract: No abstract text available Text: TM SupreMOS FCH76N60NF tm 600V N-Channel MOSFET, FRFET Features Description • RDS on = 31.5mΩ ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based	Original	FCH76N60NF FCH76N60NF 230nC)	PDF
FCH76N60N Abstract: FCH76N60 N-Channel mosfet 600v ir Text: SupreMOSTM FCH76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description • RDS on = 28mΩ ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based	Original	FCH76N60N 218nC) FCH76N60N FCH76N60 N-Channel mosfet 600v ir	PDF
Untitled Abstract: No abstract text available Text: SupreMOS TM FCH76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description o • 650V @TJ = 150 C The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based	Original	FCH76N60N FCH76N60N 218nC)	PDF
fch76n60n Abstract: 9310 Fairchild SJ 76 A DIODE Text: FCH76N60N N-Channel SupreMOS MOSFET 600 V, 76 A, 36 mΩ Features • RDS on = 28 mΩ (Typ.)@ VGS = 10 V, ID = 38 A Description • Ultra Low Gate Charge (Typ.Qg = 218 nC) The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction (SJ) technology	Original	FCH76N60N FCH76N60N 9310 Fairchild SJ 76 A DIODE	PDF